TW200610035A - Etch and deposition control for plasma implantation - Google Patents

Etch and deposition control for plasma implantation

Info

Publication number
TW200610035A
TW200610035A TW094120768A TW94120768A TW200610035A TW 200610035 A TW200610035 A TW 200610035A TW 094120768 A TW094120768 A TW 094120768A TW 94120768 A TW94120768 A TW 94120768A TW 200610035 A TW200610035 A TW 200610035A
Authority
TW
Taiwan
Prior art keywords
etch
deposition control
plasma implantation
plasma
species
Prior art date
Application number
TW094120768A
Other languages
English (en)
Inventor
Vikram Singh
Harold M Persing
Timothy Miller
Atul Gupta
Zi-Wei Fang
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200610035A publication Critical patent/TW200610035A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW094120768A 2004-06-23 2005-06-22 Etch and deposition control for plasma implantation TW200610035A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/874,944 US20050287307A1 (en) 2004-06-23 2004-06-23 Etch and deposition control for plasma implantation

Publications (1)

Publication Number Publication Date
TW200610035A true TW200610035A (en) 2006-03-16

Family

ID=35506142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120768A TW200610035A (en) 2004-06-23 2005-06-22 Etch and deposition control for plasma implantation

Country Status (5)

Country Link
US (1) US20050287307A1 (zh)
JP (1) JP2008504687A (zh)
CN (1) CN100524626C (zh)
TW (1) TW200610035A (zh)
WO (1) WO2006002138A2 (zh)

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US20070224840A1 (en) * 2006-03-21 2007-09-27 Varian Semiconductor Equipment Associates, Inc. Method of Plasma Processing with In-Situ Monitoring and Process Parameter Tuning
WO2007124018A2 (en) * 2006-04-20 2007-11-01 Skaff Corporation Of America, Inc. Mechanical parts having increased wear resistance
KR100843231B1 (ko) * 2007-01-23 2008-07-02 삼성전자주식회사 플라즈마 도핑방법
US8029875B2 (en) * 2007-05-23 2011-10-04 Southwest Research Institute Plasma immersion ion processing for coating of hollow substrates
US9175381B2 (en) * 2008-07-09 2015-11-03 Southwest Research Institute Processing tubular surfaces using double glow discharge
WO2010021326A1 (ja) * 2008-08-19 2010-02-25 リンテック株式会社 成形体、その製造方法、電子デバイス部材および電子デバイス
KR101489326B1 (ko) * 2008-09-09 2015-02-11 삼성전자주식회사 기판의 처리 방법
CN102203912B (zh) * 2008-10-31 2013-11-13 应用材料公司 改善p3i腔室中共形掺杂的方法
JP5379530B2 (ja) 2009-03-26 2013-12-25 リンテック株式会社 成形体、その製造方法、電子デバイス用部材および電子デバイス
KR101489551B1 (ko) 2009-05-22 2015-02-03 린텍 가부시키가이샤 성형체, 그 제조 방법, 전자 디바이스용 부재 및 전자 디바이스
US8679960B2 (en) * 2009-10-14 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Technique for processing a substrate having a non-planar surface
US20130058024A1 (en) * 2010-03-29 2013-03-07 Lintec Corporation Formed article, method for producing the same, electronic device member, and electronic device
JP5697230B2 (ja) 2010-03-31 2015-04-08 リンテック株式会社 成形体、その製造方法、電子デバイス用部材及び電子デバイス
US9556513B2 (en) 2010-08-20 2017-01-31 Lintec Corporation Molding, production method therefor, part for electronic devices and electronic device
TWI457235B (zh) 2010-09-21 2014-10-21 Lintec Corp A gas barrier film, a manufacturing method thereof, an electronic device element, and an electronic device
TWI535561B (zh) 2010-09-21 2016-06-01 Lintec Corp A molded body, a manufacturing method thereof, an electronic device element, and an electronic device
US8753725B2 (en) 2011-03-11 2014-06-17 Southwest Research Institute Method for plasma immersion ion processing and depositing coatings in hollow substrates using a heated center electrode
TWI492298B (zh) 2011-08-26 2015-07-11 Applied Materials Inc 雙重圖案化蝕刻製程
US8871528B2 (en) 2011-09-30 2014-10-28 HGST Netherlands B.V. Medium patterning method and associated apparatus
US9121540B2 (en) 2012-11-21 2015-09-01 Southwest Research Institute Superhydrophobic compositions and coating process for the internal surface of tubular structures

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US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
JPH02159028A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd プラズマによる固体表面付着物の除去方法
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US7494904B2 (en) * 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
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JP4544447B2 (ja) * 2002-11-29 2010-09-15 パナソニック株式会社 プラズマドーピング方法

Also Published As

Publication number Publication date
WO2006002138A3 (en) 2006-04-06
JP2008504687A (ja) 2008-02-14
US20050287307A1 (en) 2005-12-29
CN101015041A (zh) 2007-08-08
CN100524626C (zh) 2009-08-05
WO2006002138A2 (en) 2006-01-05

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