AU2001246670A1 - Method and device for making substrates - Google Patents

Method and device for making substrates

Info

Publication number
AU2001246670A1
AU2001246670A1 AU2001246670A AU4667001A AU2001246670A1 AU 2001246670 A1 AU2001246670 A1 AU 2001246670A1 AU 2001246670 A AU2001246670 A AU 2001246670A AU 4667001 A AU4667001 A AU 4667001A AU 2001246670 A1 AU2001246670 A1 AU 2001246670A1
Authority
AU
Australia
Prior art keywords
depth
ingot
cylindrical
implantation
making substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001246670A
Inventor
Bruno Ghyselen
Atsushi Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of AU2001246670A1 publication Critical patent/AU2001246670A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

The invention concerns a method for making substrates, in particular for optics, electronics or optoelectronics. The method includes an operation which consists in implanting (100) atomic species beneath the surface of a material in the form of a cylindrical ingot (1), at a depth of implantation distributed about a certain value by bombardment of the atomic species on a zone of the ingot (1) cylindrical surface, and an operation which consists in removing (300), at a separation depth located proximate to the depth of implantation, the layer (2) of material located between the surface and the separation depth, to remove the layer (2) from the rest of the cylindrical ingot (1).
AU2001246670A 2000-04-03 2001-04-02 Method and device for making substrates Abandoned AU2001246670A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0004210A FR2807074B1 (en) 2000-04-03 2000-04-03 METHOD AND DEVICE FOR MANUFACTURING SUBSTRATES
FR0004210 2000-04-03
PCT/FR2001/000976 WO2001075196A1 (en) 2000-04-03 2001-04-02 Method and device for making substrates

Publications (1)

Publication Number Publication Date
AU2001246670A1 true AU2001246670A1 (en) 2001-10-15

Family

ID=8848788

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001246670A Abandoned AU2001246670A1 (en) 2000-04-03 2001-04-02 Method and device for making substrates

Country Status (11)

Country Link
US (1) US6855619B2 (en)
EP (1) EP1268884B1 (en)
JP (1) JP4597462B2 (en)
KR (1) KR100749597B1 (en)
AT (1) ATE437980T1 (en)
AU (1) AU2001246670A1 (en)
DE (1) DE60139385D1 (en)
FR (1) FR2807074B1 (en)
MY (1) MY128008A (en)
TW (1) TWI286166B (en)
WO (1) WO2001075196A1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6146979A (en) 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
FR2842650B1 (en) * 2002-07-17 2005-09-02 Soitec Silicon On Insulator PROCESS FOR PRODUCING SUBSTRATES, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTO-ELECTRONICS
TWI273659B (en) * 2002-07-17 2007-02-11 Soitec Silicon On Insulator Method of fabricating substrates, in particular for optics, electronics or optoelectronics
US7538010B2 (en) 2003-07-24 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating an epitaxially grown layer
FR2857983B1 (en) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator PROCESS FOR PRODUCING AN EPITAXIC LAYER
FR2857982B1 (en) * 2003-07-24 2007-05-18 Soitec Silicon On Insulator PROCESS FOR PRODUCING AN EPITAXIC LAYER
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
FR2906077B1 (en) * 2006-09-18 2009-03-06 Michel Roche METHOD AND APPARATUS FOR THE MANUFACTURE OF THIN POLY OR MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES
US8124499B2 (en) * 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US20080188011A1 (en) * 2007-01-26 2008-08-07 Silicon Genesis Corporation Apparatus and method of temperature conrol during cleaving processes of thick film materials
DE102007018080B3 (en) * 2007-04-17 2008-06-19 Eisele, Christopher, Dr. Manufacture of thin wafers, sheet or films from semiconductor body, cuts using laser and optional etchant, whilst spreading separated sheet away from body
WO2009057667A1 (en) * 2007-10-29 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
WO2009092926A1 (en) * 2008-01-21 2009-07-30 Michel Roche Method and related equipment for making thin poly- or mono-crystalline semiconductor substrates
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US9196503B2 (en) * 2012-08-23 2015-11-24 Michael Xiaoxuan Yang Methods for fabricating devices on semiconductor substrates
CA2939214A1 (en) * 2014-02-18 2015-08-27 Rayton Solar Inc. Float zone silicon wafer manufacturing system and related process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2427645A1 (en) * 1974-06-07 1976-01-02 Siemens Ag Doping semiconductor crystal rod - by forming doped layer by nuclear reaction before zone melting, giving reproducible results
FR2752768B1 (en) * 1996-08-27 2003-04-11 Commissariat Energie Atomique PROCESS FOR OBTAINING A WAFER OF LARGE-SIZE SEMICONDUCTOR MATERIAL AND USE OF THE WAFER OBTAINED FOR MAKING SEMICONDUCTOR-TYPE SUBSTRATES ON INSULATION
JPH1093122A (en) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> Method of manufacturing thin-film solar cell
FR2756847B1 (en) * 1996-12-09 1999-01-08 Commissariat Energie Atomique METHOD FOR SEPARATING AT LEAST TWO ELEMENTS OF A STRUCTURE IN CONTACT WITH THEM BY ION IMPLANTATION
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
US5899939A (en) * 1998-01-21 1999-05-04 Osteotech, Inc. Bone-derived implant for load-supporting applications
FR2774510B1 (en) * 1998-02-02 2001-10-26 Soitec Silicon On Insulator PROCESS FOR TREATING SUBSTRATES, ESPECIALLY SEMICONDUCTORS
US6503321B2 (en) * 1998-02-17 2003-01-07 The Trustees Of Columbia University In The City Of New York Slicing of single-crystal films using ion implantation
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films

Also Published As

Publication number Publication date
FR2807074A1 (en) 2001-10-05
TWI286166B (en) 2007-09-01
DE60139385D1 (en) 2009-09-10
EP1268884B1 (en) 2009-07-29
JP4597462B2 (en) 2010-12-15
JP2003529526A (en) 2003-10-07
KR20030001401A (en) 2003-01-06
WO2001075196A1 (en) 2001-10-11
ATE437980T1 (en) 2009-08-15
EP1268884A1 (en) 2003-01-02
FR2807074B1 (en) 2002-12-06
MY128008A (en) 2007-01-31
US20030186493A1 (en) 2003-10-02
US6855619B2 (en) 2005-02-15
KR100749597B1 (en) 2007-08-14

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