TW200534925A - Nozzle cleaning apparatus and substrate processing apparatus - Google Patents

Nozzle cleaning apparatus and substrate processing apparatus Download PDF

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Publication number
TW200534925A
TW200534925A TW094101573A TW94101573A TW200534925A TW 200534925 A TW200534925 A TW 200534925A TW 094101573 A TW094101573 A TW 094101573A TW 94101573 A TW94101573 A TW 94101573A TW 200534925 A TW200534925 A TW 200534925A
Authority
TW
Taiwan
Prior art keywords
nozzle
cleaning
liquid
mentioned
cleaning liquid
Prior art date
Application number
TW094101573A
Other languages
Chinese (zh)
Other versions
TWI293578B (en
Inventor
Yoshinori Takagi
Yasuhiro Kawaguchi
Original Assignee
Dainippon Screen Mfg
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Publication date
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200534925A publication Critical patent/TW200534925A/en
Application granted granted Critical
Publication of TWI293578B publication Critical patent/TWI293578B/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Coating Apparatus (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

To improve washing effect in washing treatment of a discharge nozzle for discharging a prescribed treating liquid with respect to washing technique for the discharge nozzle. A guide block 743 for approaching below a discharge port 41a of a slit nozzle 41 is provided at a washing section 74 for washing a slit nozzle 41. Gas nozzles 710 for blowing gaseous nitrogen and washing nozzles 750 for ejecting rinse liquid LQ are provided and further a suction mechanism sucks the lower part of the discharge port 41a of the slit nozzle 41. Thickness of the guide block 743 in a X-axis direction is made to be larger than the width of the discharge port 41a in the X-axis direction, and thereby adjustment is performed so that suction force by the suction mechanism may not directly act on the discharge port 41a. Thereby suction force of the suction mechanism can be raised and washing effect is improved.

Description

200534925 九、發明說明: 【發明所属之技術領域】 本發明係關於一種將噴出特定處理液之噴出噴嘴洗淨的 技術。 【先前技術】 眾所周知下述基板處理裝置,其於液晶甩玻璃矩形基 板、半導體晶圓、薄膜液晶用可撓性基板、光罩用基板、 濾色器用基板(以下,簡稱為「基板」)等之表面,塗佈抗 蝕劑等處理液。於如此之基板處理裝置中,藉由自噴出噴 嘴喷出抗蝕劑液,於基板表面形成抗蝕劑液之塗佈膜。 圖1 8至圖20係階段性表示下述情形之概念圖··於將抗蝕 劑液塗佈於基板之基板處理裝置t,由於重複塗佈處理從 而導致抗蝕劑液之附著物殘留於喷出噴嘴。圖18係於初始 狀態表示狹縫喷嘴1〇〇之前端部為正常狀態。又,圖〗9係 表示對於數十牧基板實施塗佈處理之狀態,圖2〇係表示對 於數百牧基板實施塗佈處理之狀態。即,於如此之基板處 理裝置中,若對於基板重複實施塗佈處理,則抗蝕劑液r 將逐漸殘留於噴口 101之周邊或狹縫噴嘴1〇〇之前端部侧 面。 >特別是,如圖19以及圖20所示,於使用狹縫噴嘴1〇〇實 %塗佈處理之基板處理裝置(隙縫塗佈機)中,若藉由於不 均一地附著有抗蝕劑液尺之狀態下的狹縫喷嘴ι〇〇實施塗佈 處理,則將會產生條紋狀之塗佈斑塊m穩定實施 。布趣里必須疋期洗淨去除殘留於噴口 1 〇 1之周邊的抗 98458.doc 200534925 蝕劑液R。考慮到如此之理由 + 〜主田,自先前則建議有實施喷嘴 洗淨處理之基板處理裝置,例如揭示於專利文獻卜 先前之基板處理裝置’其具備喷出洗淨液之洗淨噴嘴, 於喷嘴洗淨處理中通常之手法為自該洗淨㈣,朝向噴出 喷嘴之前端部供給洗淨液。並且,為提高其洗淨效果,業 者要求,增加洗淨液之供給量,並且迅速吸引排出用於洗 淨之洗淨液。~ ’業者要求提高吸引噴出噴嘴之前端部時 之吸引力。200534925 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a technology for cleaning a spray nozzle that sprays a specific treatment liquid. [Prior art] The following substrate processing devices are well known, which are used for liquid crystal glass rectangular substrates, semiconductor wafers, flexible substrates for thin film liquid crystals, substrates for photomasks, substrates for color filters (hereinafter referred to as "substrates"), etc. The surface is coated with a treatment liquid such as a resist. In such a substrate processing apparatus, a resist liquid is sprayed from a spray nozzle to form a coating film of the resist liquid on the substrate surface. Figs. 18 to 20 are conceptual diagrams showing the following situations in a staged manner: In the substrate processing apparatus t for applying a resist solution to a substrate, the adherence of the resist solution remains on the substrate due to repeated coating processes. Spray the nozzle. FIG. 18 shows the end state before the slit nozzle 100 in a normal state in the initial state. Fig. 9 shows a state in which a coating process is performed on several tens of substrates, and Fig. 20 shows a state in which a coating process is performed on several hundreds of substrates. That is, in such a substrate processing apparatus, if the coating process is repeatedly performed on the substrate, the resist liquid r will gradually remain on the periphery of the nozzle 101 or the side of the end of the slit nozzle 100 before. > In particular, as shown in FIG. 19 and FIG. 20, in a substrate processing apparatus (slot coater) using a 100% coating process using a slit nozzle, if a resist is unevenly adhered Applying the coating process to the slit nozzle ιο under the state of the liquid level will cause streaky coating plaques m to be stably performed. Butchery must be cleaned at regular intervals to remove the residual 98458.doc 200534925 etchant solution R remaining around the nozzle 101. In view of this reason + ~ Juda, it has been suggested that there is a substrate processing apparatus for performing nozzle cleaning processing. For example, it is disclosed in the patent document. The previous substrate processing apparatus has a cleaning nozzle that sprays cleaning liquid. A common method in the nozzle cleaning process is to supply a cleaning liquid from the cleaning head toward the end portion before the nozzle is ejected. In addition, in order to improve the cleaning effect, the industry requires that the supply amount of the cleaning liquid is increased, and the cleaning liquid used for cleaning is quickly attracted and discharged. ~ ‘Industrial manufacturers have demanded increased suction power when suctioning the front end of the nozzle.

[專利文獻1]曰本專利特開平u_074179號公報 [發明所欲解決之問題] 然而,於先前之基板處理袭£中,存在如下問題··若增 大吸引力’則自喷口至喷出喷嘴内所填充之抗蝕劑液时 爻到吸引從而被吸出。特別是,於抗蝕劑液(處理液)為低 黏度之情形時’該問題更為顯著。 圖21係表示於抗钱劑液r被吸出之部分中混入有空氣之 狀恶。又,圖22係表示於抗餘劑液R被吸出之部分中混入 有洗淨液(清洗液LQ)之狀態。如此,於先前之基板處理裝 置中,若為提高洗淨力而增大吸引力,則由於洗淨後之喷 出噴鳴於長度方向成為不均一等之狀態惡化,將無法增加 吸引力,因而提高洗淨處理中之洗淨效果方面存在限度。 又,於先前之基板處理裝置中,存在如下問題··即使於 喷噶洗淨處理結束之狀態,條紋狀附著物亦會殘留於噴出 喷嘴之前端部側面。圖23係表示於先前之基板處理裝置 中,於喷嘴洗淨處理後所發現之條紋狀附著物RL的圖。圖 98458.doc 200534925 23所示之附著物關於狹縫喷嘴⑽之前端部側面之卜 有洗淨液範圍中最高位置附近,由於滯留有所溶解之抗^ 劑液與洗淨液的混合液等而得以形成者。如此之附著物虹 亦可使洗淨後之狹縫噴嘴丨〇〇之狀態惡化。 本發明係馨於上述課題而製成者,其目的在於提高噴出 噴嘴之洗淨處理中之洗淨效果。 、 【發明内容】 為解決上述課題,請求項1之發明係-種喷嘴洗淨裝 置,其特徵在於:其係將自設置於前端部之噴口喷出特定 處理液之喷出喷嘴加以洗淨者,其具備 、朝向上述喷出喷嘴之前端部附近,自嘴口供給特定洗淨 液之洗淨液供給機構, 藉由吸引口吸㈣由上述洗淨液供給機構所供給之上述 特定洗淨液之吸引機構,且 以上述噴口周圍可大致成為上述特定處理液之停滯點之 方式,凋整上述吸引機構之吸引力。 又,請求項2之發明係與請求項1之發明相關之喷嘴洗淨 裝置’其中進而具備遮蔽構件’上述遮蔽構件具有上述喷 出喷嘴之喷口較短方向寬度以上之厚度,且配置於上述嗔 出喷嘴之噴口下方周圍,且 上述吸引機構之吸引口藉由自上述遮斷構件之下方實施 吸引’從而調整上述喷出㈣之喷口周圍的上述吸引機構 之吸引力。 又,請求項3之發明係與請求項2之發明相關之喷嘴洗淨 98458.doc 200534925 其中上述遮蔽構件具有導向面,該導向面將藉由上 述洗淨液供給機構所供給之上述特定洗淨液導向下方。 + M、之毛明係與凊求項1之發明相關之喷嘴洗淨 \ 上述吸引機構藉*自上述噴出噴嘴之前端部側 方貫轭吸引,從而調整上述嗔 引機構之吸引力。 ^㈣ 二:項5之發明係與請求項4之發明相關之喷嘴洗淨 2哈其中上述吸引機構之吸引口較之上述洗淨液供給機 構之喷口更接近配置於上述噴出喷嘴。 又,請求項6之發明係與請求項4之發明相關之喷嘴洗淨 :置’其:自設置於上述喷出喷嘴之前端部下方的= 排出錯由上边洗淨液供給機構所供給之上述特定洗淨 液。 又,請求項7之發明係與請求項6之發明相關之喷嘴洗淨 裝置,其中進而具備配置於上述噴出噴嘴之前端 具有導向面之引導構件,上述導向面將藉由上述洗淨液供 給機構所供給之上述特定洗淨液導向下方。 又,請求項8之發明係與請求項1之發明相關之嘴嘴洗.、爭 ,置:其中進而具備調整上述洗淨液供給機構中的上 定洗淨液之供給位置的調整機構。 、 又,請求項9之發明係與請求項8之發明相關之 裝置’其中上述調整機構具有特定厚度之分隔物/ 又,請求項!〇之發明係與請求項i之發明相關 淨聚置’其中上述喷出喷嘴之喷口係延伸於特定方向之隙 98458.doc 200534925 缝,且進而具備纟上述洗淨液供給機構沿著上料定方向 移動之掃描機構。 ° ^請求項Η之發明係與請求項】之發明相關之喷嘴洗 以置’其中上述噴出嘴嘴之噴口係延伸於特定方向之隙 縫,而上述洗淨液供給機構可大致同時供給上述特定洗爭 液於橫跨上述喷出喷嘴之前端部中之上述特定方向整 體寬度上。 又’請求項12之發明係與請求頊 欠項1之發明相關之噴嘴洗 淨裝置,其中進而具備將特定氣體供給至上述嘴出喷嘴之 前端料氣體供給機構,且藉由來自上述氣體供給機構之 上述特定氣體之供給位置設於來自 來自上述洗淨液供給機構之 上述特疋洗净液之供給位置之上方。 於又= 項13之發明係一種喷嘴洗淨裝置,其特徵在 係將自设置於前端部之喷口嘴出特定處理 喷嗔加以洗淨者,其具備 、出 朝向上述噴㈣嘴之前端部附近供”定 液供給機構, 无冷 吸引藉由上述洗淨液供給機構所供給之上述特定洗淨、夜 的吸引機構,且 ^^^ 上述洗淨液供給機構具備 複數個朝向上述喷出嘖嘴 之洗淨喷嘴, 噴出上述料洗淨液 並且來自上述複數個洗淨噴嘴中至 述特定洗淨液之供給位置μ爲之上 置以對於來自其他洗淨喷嘴之 98458.doc -J0- 200534925 特定洗淨液之供給位置, 置。 於呵度方向上相異之方式得以配 又。月求項14之發明係—種基板處理裝置, 於:其係於基板上塗佈特定處理液者,且具帛在 保持基板之保持機構, 自設置於前端部之噴口噴出特定處理液至保持 持機構之基板表面的噴出噴嘴,以及 、“呆 洗淨上述喷出噴嘴之喷嘴洗淨裝置,且 上述喷嘴洗淨裝置具備 朝向上述噴出噴嘴之前端部附近液 液供給機構, 吁疋况孕液之洗淨 吸引藉由上述洗淨液供給機構所供 的吸引機構, 、〇上述特疋洗淨液 並以上述喷口周圍可大 之方式,$ # 為上述特定處理液的停滯點 之方式4整上述吸引機構之吸引力。 w月求項1 5之發明係一 於:其係於基板上塗佈特定處理;:者處 保持基板之保持機構, 〃備 自設置於前端部之喷 持機構之基板表面的喷出嘴嘴寺:及處理液至保持於上述保 洗淨上述噴出噴嘴之喷嘴洗淨裝置,且 上述喷嘴洗淨裝置具備 朝向上述喷出噴嘴之前端部附 液供給機構, ^、、力特定洗淨液之洗淨 98458.doc 200534925 吸引藉由上述洗淨液供給機構所供給之上述特定洗淨液 的吸引機構, 上述洗淨液供給機構具備 複數個朝向上述喷出噴嘴之前端部噴出上述特定洗淨液 之洗淨噴嘴, ' 並且來自上述複數個洗淨喷嘴中至少一個洗 述特定洗淨液之供給位置以對於來自其他洗淨喷嘴之上述 特定洗淨液之供給位置,於高度方向上相異之方式得以配 [發明之效果] 於請求項1至12以及14之發明中,可藉由以喷口周圍大 致成為特定處理液之停滯點之方式調整吸引機構之吸引 力,並藉由吸引迅速排出洗淨液與污染物,並且抑制 口吸出喷出噴嘴内之處理液。 、 於請求項2之發明中,進而具備遮蔽構件,並且吸引機 引口自遮斷構件下方實施吸引,藉此調整噴出噴嘴 之噴口周圍的吸引機構之吸引 ^ l 、、角 力從而由此可易於實現請 ㈣1之發明,而上述遮蔽構件係具有喷出噴嘴之噴口之 奴紐方向寬度以上之厚度’且配置於噴出噴嘴之 周圍者。 只Γ力 於請求項3之發明中,可藉 出洗淨液,上述導向^ 有導向面,進而迅速排 D面係將藉由洗淨液供給機構所供給之 特疋洗淨液導向下方者。 於請求項4之發明中,茲山A + 中精由自喷出喷嘴之前端部側方實 98458.doc 12 200534925 細吸二’從而調整喷出喷嘴之嗔口周圍的吸引機構之吸引 力’藉此可易於實現請求項1之發明。 於請求項6之發明中’由於自設置於喷出喷嘴之前端部 一 排出错由洗淨液供給機構所供給之 淨液’藉此可排出、、' r液而並非僅依賴於吸引機構,因此 σ木X小容量機構作為吸引機構。 於請求項7之發明令,進而具備配 部下方且且士播丄 、山貝角之刖端 上述導向 藉此可自排出口有效排出洗淨液, ^ "面㈣藉由洗淨液供給機構所供 淨液導向下方者。 上4特疋洗 於凊求項8之發明十,可藉由 供給機構之特定洗來自洗淨液 理液之附著狀況,靈活調整洗淨之位置。 並根據處 於請求項9之發明中,藉由 分隔物’從而可易於實現請求項8之發明具有特定厚度之 於請求項此發明中,可藉由噴㈣嘴 特定方向之隙縫,且進而具 貪係延伸於 方向移動之掃描機構,卷現 '尹、給機構沿著特定 评钿钺構,A現裝置整體之小型化 又 士於請求仙之發明中,可藉^洗淨液供給機構 %供給特定洗淨液於橫跨喷 11大致同 χ ^ _ 貝角之月丨J端部申々4士 a 王部寬度,從而縮短喷嘴洗淨所f之時間。<特疋方向 :請求項12之發財’具備將特定I體供… 之w端部的氣體供給機構,且 、°噴出噴嘴 氣體之供給位置位於來自洗淨液 成構之特定洗淨液之 98458.doc 200534925 供給位置之上方,藉此可促進乾燥洗淨液。 於請求項13以及15之發明中,藉由複數個洗淨噴嘴令至 少一個洗淨喷嘴之特定洗淨液之供給位置以對於其他洗淨 喷嘴之特定洗淨液之供給位置,於高度方向上相異之方式 而得以配置,可防止條紋狀附著物殘留於噴出噴嘴。從而 可提高洗淨效果。 【實施方式】 以下’就本發明之較好的實施形態,—面參照附圖—面 詳細說明。 <1·第一實施形態> 圖1係表示本發明之基板處理裝置丨的立體圖。又,圖2 係表示基板處理裝置i之塗佈處理之主要構成的側視圖。θ 再者,圖1中為方便圖示以及說明,定義為之轴方向表示 垂直方向,ΧΥ平面表示水平面,但該等僅是為把握位置 關係而方便定義者,並非限定以下說明之各方向。關於下 述圖式亦為相同。 基板處理裝置i大致區分為本體2與控制部8,並將用以 製造液晶顯示裝置之畫面面板的矩形破璃基板作為被處理 基板(以下,只稱為「基板J)90,於用以選擇性姓刻形成 於基板90表面之電極層等的微影製程中,作為於基板%表 面塗佈作為處理液之抗钱劑液的塗佈處理裝置而構成。因 而,於本實施形態中,狭縫喷嘴41可噴出抗勒劑液。再 者,基板處理褒置1亦可變形利用作為不僅將處理液塗佈 於液晶顯示裝置用之玻璃基板’通常亦將處理液塗佈於平 98458.doc 200534925 板顯示器用之各種基板的裝置。 本體2具備平臺3,該平臺3係起作用作為用以載置並保 持基板90之保持台,並且亦起作用作為附屬之各機構之基 台。平臺3係具有長方體形狀的例如一體之石製,其上面 (保持面30)以及側面加工為平坦面。[Patent Document 1] Japanese Patent Laid-Open Publication No. u_074179 [Problems to be Solved by the Invention] However, in the conventional substrate processing method, there are the following problems: • If the attraction force is increased, the nozzle will be discharged from the nozzle to the nozzle. The resist liquid filled therein is attracted and sucked out. This problem is particularly significant when the resist liquid (treatment liquid) has a low viscosity. Fig. 21 shows a state in which air is mixed in a portion where the anti-money liquid r is sucked out. Fig. 22 shows a state where a cleaning liquid (cleaning liquid LQ) is mixed in a portion where the anti-reagent liquid R is sucked out. In this way, in the conventional substrate processing apparatus, if the attraction force is increased in order to increase the cleaning power, the state of the spray jets after cleaning becomes uneven in the longitudinal direction, and the attraction force cannot be increased. There is a limit in improving the cleaning effect in the cleaning process. Further, in the conventional substrate processing apparatus, there are the following problems ... Even in the state where the spray cleaning process is completed, the stripe-shaped adhered matter remains on the side surface of the end portion before the ejection nozzle. Fig. 23 is a view showing a stripe-shaped adherend RL found after a nozzle cleaning process in a conventional substrate processing apparatus. Fig. 98458.doc 200534925 23 The attachment on the side of the front end of the slit nozzle ⑽ is near the highest position in the cleaning liquid range, and because of the retention of the dissolved antiseptic solution and cleaning liquid, etc. And it was formed. Such an attached rainbow also deteriorates the state of the slit nozzle after washing. The present invention was made in view of the above-mentioned problems, and its object is to improve the cleaning effect in the cleaning process of the ejection nozzle. [Summary of the Invention] In order to solve the above problem, the invention of claim 1 is a nozzle cleaning device, which is characterized in that it is a person who cleans a spray nozzle that sprays a specific treatment liquid from a nozzle provided at the front end. It includes a cleaning liquid supply mechanism that supplies a specific cleaning liquid from the mouth toward the vicinity of the front end of the ejection nozzle, and sucks the specific cleaning liquid supplied by the cleaning liquid supply mechanism through a suction port. The attraction mechanism of the suction mechanism is adjusted in such a manner that the periphery of the nozzle can substantially become the stagnation point of the specific treatment liquid. In addition, the invention of claim 2 is a nozzle cleaning device related to the invention of claim 1 which further includes a shielding member. The shielding member has a thickness greater than the width in the short direction of the ejection nozzle of the ejection nozzle and is disposed in the above-mentioned 嗔Around the lower part of the nozzle of the nozzle, and the suction port of the suction mechanism performs suction from below the blocking member, thereby adjusting the attraction of the suction mechanism around the nozzle of the jet. In addition, the invention of claim 3 is a nozzle cleaning 98458.doc 200534925 related to the invention of claim 2, wherein the shielding member has a guide surface, and the guide surface will be subjected to the specific cleaning provided by the cleaning liquid supply mechanism. The fluid is directed downward. + M, Mao Ming is the nozzle cleaning related to the invention of claim 1 \ The above suction mechanism sucks * from the side of the front end of the nozzle before suction, thereby adjusting the attraction of the above mentioned suction mechanism. ^ ㈣ 2: The invention of item 5 is the nozzle cleaning 2ha related to the invention of claim 4, wherein the suction port of the suction mechanism is arranged closer to the discharge nozzle than the nozzle of the cleaning liquid supply mechanism. In addition, the invention of claim 6 relates to the nozzle cleaning related to the invention of claim 4: it is set from the position below the front end of the above-mentioned ejection nozzle = the above is supplied by the upper cleaning liquid supply mechanism. Specific cleaning solution. The invention of claim 7 is a nozzle cleaning device related to the invention of claim 6, further comprising a guide member having a guide surface disposed at a front end of the ejection nozzle, and the guide surface is provided by the cleaning liquid supply mechanism. The supplied specific washing liquid is guided downward. In addition, the invention of claim 8 relates to the invention of claim 1, and further includes an adjustment mechanism for adjusting the supply position of the cleaning liquid in the cleaning liquid supply mechanism. Moreover, the invention of claim 9 is a device related to the invention of claim 8 ', wherein the above-mentioned adjustment mechanism has a partition with a specific thickness / again, the claim! The invention of 〇 is related to the invention of claim i. “The nozzle of the above-mentioned ejection nozzle is a gap extending in a specific direction 98458.doc 200534925, and is further provided with the above-mentioned cleaning liquid supply mechanism along the feeding direction. Mobile scanning mechanism. ° ^ The invention of claim item 系 is related to the invention of claim item], wherein the nozzle of the above-mentioned spray nozzle is a slit extending in a specific direction, and the cleaning liquid supply mechanism can supply the above-mentioned specific cleaning at substantially the same time. The liquid contention is across the entire width in the specific direction in the front end portion of the ejection nozzle. The invention of claim 12 is a nozzle cleaning device related to the invention of claim 1 and further includes a tipping gas supply mechanism before supplying a specific gas to the nozzle out of the nozzle. The supply position of the specific gas is provided above the supply position of the special cleaning liquid from the cleaning liquid supply mechanism. The invention according to item 13 is a nozzle cleaning device, which is characterized in that a person who cleans and sprays a specific treatment from a nozzle provided at the front end portion is provided and exits near the front end portion facing the nozzle. “Supply” fixed-liquid supply mechanism, without cold suction, the specific cleaning and night suction mechanism supplied by the cleaning liquid supply mechanism, and ^^^ The cleaning liquid supply mechanism is provided with a plurality of nozzles directed toward the ejection nozzle. The cleaning nozzle sprays the above-mentioned cleaning liquid and comes from the above-mentioned plurality of cleaning nozzles to the supply position μ of the specific cleaning liquid above to be specific to 98458.doc -J0- 200534925 from other cleaning nozzles The supply position of the cleaning liquid is set in a different way in the direction of the degree. The invention of month 14 is a substrate processing device, which is a person who applies a specific processing liquid on a substrate, and A holding mechanism for holding a substrate, a nozzle for discharging a specific processing liquid from a nozzle provided at a front end portion to a surface of a substrate of the holding mechanism, and a nozzle cleaning method for "cleaning the above-mentioned injection nozzle" And the nozzle cleaning device is provided with a liquid-liquid supply mechanism toward the vicinity of the front end of the ejection nozzle, and the suction and cleaning mechanism for the pregnant liquid is sucked by the suction mechanism provided by the cleaning liquid supply mechanism, Wash the liquid and adjust the attraction of the suction mechanism in such a way that the area around the nozzle can be large, and $ # is the stagnation point of the specific treatment liquid. The invention of claim 15 is based on: it is a method for coating a substrate with a specific treatment; it is a holding mechanism for holding a substrate, and a nozzle is provided from the surface of the substrate of a spraying mechanism provided at the front end Temple: and a nozzle cleaning device for holding the processing liquid to the above-mentioned cleaning and cleaning the above-mentioned ejection nozzle, and the above-mentioned nozzle cleaning device is provided with a liquid supply mechanism attached to the front end of the above-mentioned ejection nozzle. Washing 98458.doc 200534925 Suction mechanism for suctioning the specific cleaning liquid supplied by the cleaning liquid supply mechanism, the cleaning liquid supply mechanism is provided with a plurality of specific cleaning liquids ejected toward the front end of the discharge nozzle The cleaning nozzles, and the supply position of the specific cleaning solution from at least one of the plurality of cleaning nozzles is different from the supply position of the specific cleaning solution from other cleaning nozzles in the height direction. [Effect of the invention] In the inventions of claims 1 to 12 and 14, the suction mechanism can be adjusted by making the periphery of the nozzle approximately the stagnation point of the specific processing liquid. Suction force, and rapidly discharging the cleaning liquid by suction and contaminants, and to suppress discharge within the treatment liquid sucked out of the nozzle opening. In the invention of claim 2, a shielding member is further provided, and the suction port of the suction machine is suctioned from below the blocking member, thereby adjusting the suction of the suction mechanism around the nozzle of the spray nozzle ^ l, and thus the angular force can be easily made. The invention of claim 1 is realized, and the shielding member has a thickness greater than or equal to the width in the direction of the nozzle of the ejection nozzle, and is disposed around the ejection nozzle. Only in the invention of claim 3, the cleaning liquid can be borrowed. The above-mentioned guide ^ has a guide surface, and then the D surface is quickly discharged. The special cleaning liquid supplied by the cleaning liquid supply mechanism is directed to the lower one. . In the invention of claim 4, "Zishan A + Zhongjing" was sucked from the side of the front end of the self-ejection nozzle. 98458.doc 12 200534925 Fine suction 2 'to adjust the attraction of the suction mechanism around the mouth of the ejection nozzle. Thereby, the invention of claim 1 can be easily realized. In the invention of claim 6, "due to the fact that the clean liquid supplied by the cleaning liquid supply mechanism is discharged from the end portion before the ejection nozzle", the liquid can be discharged instead of relying solely on the suction mechanism. Therefore, the σ × X small-capacity mechanism serves as an attraction mechanism. According to the invention order of claim 7, further provided with the above-mentioned guidance of the bottom of the distribution part and the top ends of Shiboyao and Shanbejiao can effectively discharge the cleaning liquid from the discharge port. ^ &Quot; Noodles are supplied by the cleaning liquid The liquid supplied by the institution is directed to the lower one. The above 4 special cleaning. In invention 10 of claim 8, the specific washing of the supply mechanism can be used to adjust the washing position flexibly. According to the invention of claim 9, the invention of claim 8 can be easily realized by the partition '. The invention of claim 8 has a specific thickness. In this invention, a slit in a specific direction can be sprayed, and furthermore, it is greedy. It is a scanning mechanism that extends in the direction, and presents the 'Yin' and the mechanism along a specific evaluation structure. The miniaturization of the entire A device is also in the request for the invention. It can be supplied by the cleaning liquid supply mechanism%. The specific cleaning liquid in the cross spray 11 is approximately the same as χ ^ _ bay angle of the moon 丨 J end Shen Shen 4 Shi a king width, thereby shortening the nozzle cleaning time f. < Special direction: The fortune of claim 12 'is provided with a gas supply mechanism at the end of w for supplying a specific I body, and the supply position of the nozzle gas is located at the specific cleaning liquid from the cleaning liquid structure. 98458.doc 200534925 above the supply position, which promotes drying of the cleaning solution. In the inventions of claims 13 and 15, the supply position of the specific cleaning solution of at least one cleaning nozzle to the supply position of the specific cleaning solution of the other cleaning nozzles by the plurality of cleaning nozzles is in the height direction. They are arranged in different ways to prevent streaks from adhering to the discharge nozzle. Thereby, the washing effect can be improved. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. < 1. First Embodiment > Fig. 1 is a perspective view showing a substrate processing apparatus of the present invention. FIG. 2 is a side view showing a main configuration of a coating process of the substrate processing apparatus i. θ For the convenience of illustration and explanation in Fig. 1, the axis direction is defined as the vertical direction, and the XY plane is the horizontal plane, but these are only for the convenience of definition for grasping the positional relationship, and are not limited to the directions described below. The same applies to the drawings described below. The substrate processing device i is roughly divided into a main body 2 and a control unit 8, and a rectangular broken glass substrate used for manufacturing a screen panel of a liquid crystal display device is used as a substrate to be processed (hereinafter, referred to simply as "substrate J" 90). In the lithography process such as electrode layer engraved on the surface of the substrate 90, it is constituted as a coating processing device for coating the anti-money liquid as a processing liquid on the% surface of the substrate. Therefore, in this embodiment, the narrow The slit nozzle 41 can spray the anti-leak agent liquid. In addition, the substrate processing unit 1 can also be deformed and used as a glass substrate for applying a processing liquid not only to a liquid crystal display device, but also to a flat liquid. 200534925 A device for various substrates for a panel display. The main body 2 is provided with a platform 3 which functions as a holding table for placing and holding the substrate 90, and also functions as a base for each attached mechanism. Platform 3 It is made of, for example, an integrated stone having a rectangular parallelepiped shape, and the upper surface (holding surface 30) and the side surface are processed into a flat surface.

平堂3上面形成水平面,成為基板9〇之保持面3〇。於保 持面3 0上分佈形成有並未圖示之多數真空吸附口,於基板 處理裝置1上處理基板9〇之期間藉由吸附基板9〇,將基板 90保持於特定水平位置。又,於保持面3〇空開適宜間隔設 有藉由並未圖示之驅動機構而上下自由升降之複數個起模 頂才于LP。起模頂桿lp用於卸除基板9〇時推上基板9〇。 於保持面30中隔著基板9〇之保持區(保持基板9〇之區域) 之兩鈿。卩,固疋设置有一對平行延伸於大致水平方向之移 動軌道3卜移動軌道31與固定設置於架橋構造彳之兩端部 最下方之並未圖示之支持組塊共同構成引導架橋構造4之 移動(將移動方向規定為特定方向)’且將架橋構造4支持於 保持面30上方的線性導執。 於平臺3之上方,設置有自該平臺3之兩側部分大致水^ 架設的架橋構造4。架橋構造4主要包含例如將碳纖維力㈠ 樹脂作為骨料之喷嘴支持部㈣支持其兩端之升降機相 43 、 44 〇 Μ支持部40安裝有狹鏠噴嘴4卜圖β,於向作 二具=長度方向之狹縫噴嘴41連接有抗韻劑供給機仙 2),⑽㈣供給機構6包含將抗飯劑液供給至狭 98458.doc 200534925 41之配管或抗蝕劑用泵等。藉由一面掃描基板9〇表面,一 面將藉由抗蝕劑用泵所供給之抗蝕劑液喷出至基板9〇表面 之特疋區域(以下,稱為「抗蝕劑塗佈區域」。),狹縫噴嘴 41將抗餘劑液塗佈於基板9〇。此處,所謂抗蚀劑塗佈區 ‘域,其係指基板90表面中將要塗佈抗蝕劑液之區域,通常 係自基板90之全面積除去沿著端緣之特定寬度區域的區 域。 φ 升降機構43、44係於狹縫喷嘴41之兩側分開,藉由嘖嘴 支持部40與狹縫噴嘴41連結。升降機構43、料主要包含 AC伺服馬達43a、44a以及並未圖示之圓頭螺栓,並根據來 自控制部8之控制信號生成架橋構造4之升降驅動力。藉 此,升降機構43、44使狹縫喷嘴4][平移升降。又,升降機 構43、44亦可使用於調整狹縫喷嘴4〗在平面内的 態。A horizontal plane is formed on the upper surface of the flat hall 3 and becomes a holding surface 30 of the substrate 90. A plurality of vacuum suction ports (not shown) are formed on the holding surface 30, and the substrate 90 is held at a specific horizontal position during the processing of the substrate 90 on the substrate processing apparatus 1 by sucking the substrate 90. In addition, a plurality of jacks are provided on the holding surface 30 at a suitable interval for freely lifting up and down by a driving mechanism (not shown). The ejector pin lp is used to push on the substrate 90 when the substrate 90 is removed. The two sides of the holding area (the area holding the substrate 90) of the substrate 90 are held in the holding surface 30. That is, a pair of moving rails 3 extending parallel to the substantially horizontal direction are fixedly provided. The moving rails 31 and the supporting blocks (not shown) fixedly arranged at the bottom of both ends of the bridge structure 共同 together constitute a guide bridge structure 4 Move (the movement direction is specified as a specific direction) 'and the bridge structure 4 is supported by the linear guide above the holding surface 30. Above the platform 3, a bridge structure 4 is set up which is roughly erected from both sides of the platform 3. The bridge structure 4 mainly includes, for example, a nozzle support portion using carbon fiber, resin as an aggregate, and supporting the elevator phases at both ends. 43, 4 Μ The support portion 40 is equipped with a narrow nozzle 4 and a diagram β. The slit nozzle 41 in the longitudinal direction is connected to the anti-hypertensive agent supply device 2), and the cymbal supply mechanism 6 includes a pipe or a pump for resist for supplying the anti-antiseptic solution to the narrow 98458.doc 200534925 41. While scanning the surface of the substrate 90, the resist liquid supplied by the resist pump was ejected to a special area (hereinafter referred to as a "resist coating area") of the substrate 90. ), The slit nozzle 41 applies the anti-remainder liquid to the substrate 90. Here, the term "resist coating area" means a region on the surface of the substrate 90 where the resist liquid is to be applied, and is generally a region in which a specific width region along the edge is removed from the entire area of the substrate 90. The φ elevating mechanisms 43 and 44 are spaced apart from each other on both sides of the slit nozzle 41, and are connected to the slit nozzle 41 by a nozzle support portion 40. The lifting mechanism 43 mainly includes AC servo motors 43a and 44a and round head bolts (not shown), and generates a lifting driving force for the bridge structure 4 based on a control signal from the control unit 8. Thereby, the elevating mechanisms 43, 44 raise and lower the slit nozzle 4] [translationally. The lift mechanisms 43 and 44 can also be used to adjust the state of the slit nozzle 4 in a plane.

,糊冓造4之兩端部,沿著平臺3之兩側緣側分別固定 :又置有-對AC空心線性馬達(以下,簡稱a厂線性馬 達)50、51 ’上述Ac空心線性馬達5〇分別具備固定子 (定子)50a與移動子50b以及固定子5]a 於架橋構造4之兩端部,分別固定設置有分別具有定:部 與檢測子之線性譯碼器52、53。線性譯碼器52、53檢測線 』焉達5G 5】之位置。主要由該等線性馬達%】與線性 澤碼益52、53構成移動機構5,該移動機構$係用於將架橋 構造㈣導於移動軌道3】且移動於平臺3上者。控制部_ 根據來自線性譯碼器52、53之㈣結果控制隸馬⑽之 9S458.doc 16 200534925 動作’從而控制平臺3上之架橋構造4之移動,即控制狹縫 噴噶4 1之基板9 〇之掃描。 本體2之保持面30中,於保持區(-X)方向側設置有開口 32 °開口 32與狹縫噴嘴41相同,於γ軸方向具有長度方 向’且該長度方向之長度與狹縫噴嘴41之長度方向長度大 致相同。又,於開口 32下方之本體2内部,設置有喷嘴初 始化機構7。噴嘴初始化機構7使用於預備處理(下述),上 述預備處理係於將抗蝕劑液塗佈至基板9〇之處理(以下, 稱為「本塗佈處理」)前實行。 没置於開口 32内之喷嘴初始化機構7具備預備塗佈機構 73 °預備塗佈機構73具備生成旋轉驅動力之旋轉機構 730 ’藉由旋轉機構73〇而旋轉之滾筒73 1,將滾筒731儲存 於内部之大致箱狀框體732以及清除滾筒73】之附著物的脫 水葉片733。 滾筒73 1以自框體732之上面開口部露出一部分之方式而 配置,其圓筒側面為塗佈有抗蝕劑液之塗佈面。基板處理 裝置1於預備塗佈處理中,自狹縫喷嘴41喷出抗蝕劑液至 滾筒731。再者,所謂預備塗佈處理係指下述處理··於正 式塗佈處理前,藉由自移動至滾筒731上方之狹縫喷嘴“ 噴出少量抗蝕劑液,將抗蝕劑液預備性塗佈於滾筒731。 本實施形態中之基板處理裝置1係藉由預備塗佈處理,使 狹縫噴嘴4 1之狀態於γ軸方向均一化。 滾筒731之塗佈面可於框肉都 /32内部下方中浸沒於蓄積之 洗淨液。即,於預備塗佈處理中涂佑古 处里甲皇佈有抗蝕劑液之塗佈面 98458.doc 200534925 藉由旋轉機構730移動至下方,並藉由洗淨液而得以洗 淨又,於洗淨後附著於自洗淨液取出之塗佈面之污染物 藉由脫水葉片733得以清除。如此方式,於滾筒73ι旋轉一 圈期間塗佈面可恢復為清潔狀態,故於藉由狹縫喷嘴^實 轭預備塗佈處理時,將不會污染狹縫噴嘴4 ^。 又,噴嘴初始化機構7具備噴嘴洗淨機構7〇。圖3係表示 喷嘴洗淨機構70之構成的圖。噴嘴洗淨機構川具備氣體供 給機構71、吸引機構72、洗淨部74、洗淨液供給機構乃以 及驅動機構76,且其係主要實施上述噴嘴洗淨處理之機 構。再者,雖然圖3中省略圖示,但氣體供給機構71、吸 引機構72、洗淨液供給機構75以及驅動機構%係以可發送 接收信號之狀態分別連接於控制部8,且 來自控制部8之控制信號而得以控制。 籌猎由 氣體供給機構71係介以供給配管將氮氣體自並未圖示之 筒罐供給至洗淨部74之機構。供給至洗淨部74之氮氣體自 氣體喷嘴710朝向特定方向噴出(詳細後述)。再者,本實施 形態中之基板處理裝置1雖然使用有氮氣體作為惰性氣 體,但惰性氣體並非限定於氮氣體。又,如若係乾淨氣 體,即使空氣亦可使用(麗縮空氣:經過加屢之空氣)。 吸引機構72係介以廢棄配管自設置於洗淨部74之吸引口 ::〇(圖5)吸引洗淨液或藉由洗淨液得以去除之抗蝕劑液 寺之機構。再者’作為吸引機構72,通常可採用先前之眾 所周知之機構。例如,亦可係使用真空產生裳置或屢縮機 吸引之機構’亦可係包含吸引果與氣液分離BOX之機構 98458.doc 200534925 等。又,例如,只要可獲得所需之用力,亦可使用設置於 工廠内之排氣設備。 洗淨部74主要包含基座74〇、分隔物741、噴出部川、 導向組塊743以及支持構件744,且具有下述功能:於喷嘴 洗淨處理中,洗淨去除由於重複正式塗佈處理而附著於狹 縫噴嘴41之前端部側面的抗蝕劑液。 作為洗淨部74之各構成之基台而發揮作料基座74〇連 接於驅動機構76,並可藉由驅動機構%往返移動於γ袖方 向。 &分隔物741係具有特定厚度之板狀構件,其以可裝卸狀 態插入至基座74〇與噴出部742之間。於本實施形態中,分 隔物741藉由自基座74〇之接而釦人+ , 晨〇之後面朝向噴出部742插入之螺釘 而得以固定,且可藉由鬆開該螺釘而得以拆卸。 如此,藉由將配置於基座740與噴出部742之間之分隔物 741 ’適宜交換為厚度不同者,可調整喷出部%之ζ軸方 向位置。如下所述’於喷出部742之特定位置設置有洗淨 :嘴750’而調整噴出部742之2轴方向位置則相當於調整 洗淨嘴嘴750之高度位置㈣方向之位置)。故而,本實施 形態中之噴嘴洗淨機構70可將藉由洗淨液供給機構75所供 給之洗淨液之供給位置調整為2軸方向。 圖4係喷出部742之a & ' 4〜的正視圖。喷出部742係 :々寺疋位置關係配置氣體噴嘴7ι〇以及洗淨喷嘴㈣之 万式而定位的構件。拉+ ^ 猎b,決疋氣體喷嘴710之氮氣體之 位置μ洗淨嘖嘴…之洗淨液之供給位置。再者, 9S45S.doc 19- 200534925 圖4中之Z1至Z4表示對向面742a中之氣體喷嘴71〇以及洗淨 噴嘴750的Z軸方向座標。又,本實施形態中之噴出部μ] 中之Z1至Z4為等間隔定位,但並非僅限於此。 _ 以對向於狹縫噴嘴41之前端部之方式而得以配置之對向 • 面742&根據狹縫喷嘴41之前端部之傾斜度,成為對於丫之平 面具有特定角度之斜度的斜面。如圖3所示,於對向面 742a上分佈有氣體喷嘴71〇以及洗淨喷嘴75〇,且分別連通 φ 連接於氣體供給機構71以及洗淨液供給機構75。 藉由氣體供給機構71所供給之氮氣體自氣體噴嘴71〇噴 出於狹縫喷嘴41。藉此,可藉由喷嘴洗淨處理,有效揮發 (或吹去)附著於狹縫喷嘴41之洗淨液。再者,自洗淨噴嘴 750噴出之洗淨液藉由與狹縫喷嘴41衝擊,將飛散至若干 南方、噴出時之尚度位置的位置為止。如圖4所示,於本實 靶形態中之基板處理裝置丨中,以來自氣體喷嘴71〇之氮氣 體之供給位置成為位於洗淨液飛散位置之上方之方式,將 • 氣體噴嘴710設置於洗淨噴嘴750之上方。藉此,噴嘴乾燥 處理中’可更有效乾燥狹縫喷嘴41。 又’氣體喷嘴7 10包含下方氣體噴嘴71〇a與上方氣體喷 嘴710b。於對向面742&中,下方氣體噴嘴71(^配置於以高 度位置,而上方氣體喷嘴71〇b配置於下方氣體喷嘴71〇&之 上方的Z4南度位置。 又,洗淨噴嘴750包含下方洗淨喷嘴750a與上方洗淨喷 嘴75〇b。於對向面742a中,下方洗淨噴嘴750a配置於21高 度位置,而上方洗淨喷嘴750b配置於下方氣體噴嘴75〇a之 98458.doc -20- 200534925 上方的Z2高度位置。 圖5係表不洗淨部7 4之導向組塊7 4 3的立體圖。導向組塊 743係於Y軸方向具有大致均勻剖面之棒狀構件,其X軸方 向厚度為狹縫噴嘴41之喷口 41a寬度(X軸方向寬度)以上, 且未滿支持構件744之X軸方向寬度。 導向組塊743藉由一對支持構件744固定支持有γ軸方向 之兩端部,並介以支持構件744相對於基座740而得以安 裳。即,導向組塊743下面自基座740離開,於基座74〇與 導向組塊743之間形成有空間。於本實施形態中之洗淨部 74中’基座740與導向組塊743之相對位置為固定。 又,導向組塊743之上面為接近狹縫喷嘴41之前端部的 接近面743a。接近面743a係朝向X軸方向之兩端向下方彎 曲之曲面。又,導向組塊743之側面中對向於喷出部742之 面為大致平行於YZ平面之導向面743b。導向面”扑離開 於喷出部742,故該等之間形成有空間。 於一對支持構件744中之(-Y側)支持構件744,設置有吸 引口 720,並介以上述廢棄配管連通連接於吸引機構72(圖 3)。吸引口 720係貫通支持構件744之孔,並設置於安裝在 支持構件744之導向組塊743之下方。 藉此,若吸引機構72開始吸引,則導向組塊743下方之 空間將受到吸引。再者,亦可構成為如下:於兩者之支持 構件744中設置吸引口 720,並自各自之方向吸引機構”實 施吸引。 返回圖3,洗淨液供給機構75係包含洗淨液塑料瓶或輸 98458.doc -21 · 200534925 液泵等之機構,並介以供給配管將洗淨液供給至洗淨部 74。 驅動機構76係使洗淨部74移動至Y軸方向之機構。作為 驅動機構76,可採用使用有旋轉馬達與圓頭螺栓之直動機 構。圖6係將喷出部742移動之情形與狹縫喷嘴41 一併表示 之圖。再者,以下將圖6所示之狹縫喷嘴41之位置稱為 「洗淨位置」。 如此,對於處於洗淨位置之狹縫噴嘴41之前端部 部742往返移動於Y軸方向,藉此設置於喷出部742之氣體 噴嘴710以及洗淨喷嘴75〇可掃描狹縫噴嘴“之前端部。再 者’驅動機構76不僅可於洗淨部74實施用以掃描狹縫噴嘴 41之動作,亦可實施使洗淨部74自狹縫噴嘴41下方退避的 t作。藉此’於狹縫喷嘴41之前端部插人至下述待機盒π 時,洗淨部74與狹縫噴嘴41可互不干擾。 返回圖2 ’待機盒77係具有與狹縫喷嘴41之長度方向寬 度大致相同尺寸的大致箱狀構件。於待機盒77内部 抗I虫劑液溶劑0待機各7 7於击丄& 、 日“… 較長時間未實施正式塗佈處理 寺貝J备、以狹縫嗔嘴41 $ 士、f & …… 贺口41项近的抗蝕劑液不合 產生乾無變質之方式而設置之機構。 不θ 於待機盒77上面,設置有用以將狹縫 入至内部的開口部。狹縫喰 之引鸲。P插 動至進而下降至# 、方;待機中將自洗淨位置移 向下降至Z轴方向的特定位 置J )。狹縫嘖嘴41位# 稱為待機位 端部則成Λ白Μ七 夏Τ ’狹縫噴嘴41之 ,〜风馮自開口部插入 〈 至待祛盒77内部之狀態,並暴 … 心4待機位置時,狹縫噴嘴41之前 露 98458.doc >22- 200534925 於溶劑環境中藉此抗蝕劑液之乾燥將會受到抑制。 返Z圖1,於控制部8之内部具備根據程式處理各種資料 之運算部80、保存程式或各種資料之記憶部81。又,於前 面具備用於操縱器輸入對於基板處理裝置〗所必須之指^ 的刼作部82,以及顯示各種資料之顯示部83。 ’' 4工制部8藉由圖1中並未圖示之境線, &电性連接於附屬於 體2之各機構。控制部8係根據來自操作部82之輸入信 號,或來自並未圖示之各種感測器等之信號,控制:降機 =槿Γ之升降動作、移動機構5之移動動作、抗姑劑供 、4構6之抗蚀劑液供給動作。進而’控制噴嘴初始化機 構7曰之各驅動機構、各旋轉機構以及各閥門等之動作,特 =是控制氣體供給機構71以及洗淨液供給機構乃之供給流 再者’具體的是’暫時記憶資料之RAM、讀取專用 以及磁碟裝置等相當於記憶部8卜或,亦可為便押式 光磁碟或記憶體卡片等之記憶媒體,以及該等之讀取二 等又,按鈕以及開關類(包含鍵盤或滑 ^ 4〇 ^ 4 J哥寻目富於 刼作。P82。或,亦可為如觸摸面板顯 力又求具顯不部83 之功此者。液晶顯示器或各種燈等則相當於顯示部U。 以上係本實施形態中之基板處理裝 σ 。 之說明。 1之功邊以及構成 其次,就喷嘴洗淨機構7〇洗淨狹縫噴 ^ , , + μ 只角斗1之則端部時之 動作(育嘴洗淨處理)加以說明。圖7至 ^ ^ ^ 丁衣不賀嘴洗淨 处里之情況的圖。再者,圖7至圖9中狹 贾為4 1之位置即 98458.doc -23- 200534925 係洗涉位置。又,於圖7至圖9中,省略關於支持構件744 之圖不’並且導向組塊743以及狹縫噴嘴41以剖面表示。 I先’藉由控制部8於喷嘴洗淨處理前控制驅動機構 76,從而使處於退避狀態之洗淨部74移動至對於狹縫喷嘴 4 1貝施洗淨處理的位置。又,控制部8以與該處理並行之 方式控制升降機構43、44以及移動機構5,藉此使狹縫噴 嘴41移動至洗淨位置。 藉此,狹縫喷嘴41與洗淨部74成為圖7所示之配置關 係。此時,如圖7所示,由於重複塗佈處理,導致於狹縫 喷嘴41之前端部侧面附著有抗蝕劑液。再者,本實施形態 中之基板處理裝置1中,以於噴嘴洗淨處理中狹縫噴嘴41 之下端與導向組塊743之接近面743a的距離(接近距離)成為 約1.5 mm之方式,定位狹縫喷嘴41之洗淨位置,但當然並 非僅限於此。亦可藉由所使用之洗淨液性質或喷出流量 寻’預先適當設定接近距離。 若藉由到此為止之移動動作喷嘴洗淨處理之準備結束, 則藉由洗淨液供給機構75使閥門為開放狀態而開始供給洗 淨液,如圖8所示,洗淨喷嘴75〇朝向狹縫噴嘴“之 側面喷出洗淨液。與洗淨噴嘴75〇噴出洗淨液之動作並 行’吸引機構72自吸引口 720開始吸引。 圖1〇係圖8所示之狀態的擴大圖。如圖1〇所示,自下方 洗淨噴嘴75〇a以及上方洗淨噴嘴鳩喷出洗淨液(清洗液 LQ) 所噴出之清洗液叫將會衝擊狹縫噴嘴41之前端部側 面’錯此洗淨狹縫喷嘴41。 98458.doc -24- 200534925 此時,藉由自下方洗淨噴嘴750a噴出之清洗液Lq,溶 解附著於狹缝噴嘴41之前端部側面的抗姓劑液r。料此, 於狹縫喷嘴41之前端部側面將會存在抗蝕劑液r與清洗液 LQ之混合液(抗蝕劑液R濃度較高之混合液)。因於先前裝 置中,洗淨噴嘴之高度位置配置為存在段差,故而藉由該 混合液將形成如圖2 3所示之附著物rl。Both ends of the paste 4 are fixed along the edges of the sides of the platform 3:-AC hollow linear motors (hereinafter referred to as a factory linear motors) 50 and 51 are also placed. 〇It is provided with a stator (stator) 50a, a mobile 50b, and a stator 5] a at both ends of the bridge structure 4, and linear decoders 52 and 53 each having a stator and a detector are fixedly provided. The linear decoders 52 and 53 detect the positions of the lines 焉 up to 5G 5]. These linear motors are mainly composed of linear motors and linear Zemei 52 and 53 to constitute a moving mechanism 5 which is used to guide the bridge structure to the moving track 3] and move on the platform 3. Control unit _ Controls the movement of 9S458.doc 16 200534925 of the horse based on the results from the linear decoders 52 and 53 so as to control the movement of the bridge structure 4 on the platform 3, that is, to control the substrate 9 of the slit jet 4 1 〇's scan. In the holding surface 30 of the main body 2, an opening 32 is provided on the holding area (-X) direction side. The opening 32 is the same as the slit nozzle 41, and has a length direction in the γ-axis direction, and the length in the length direction is the same as that of the slit nozzle 41. The length in the longitudinal direction is approximately the same. Further, inside the body 2 below the opening 32, a nozzle initialization mechanism 7 is provided. The nozzle initialization mechanism 7 is used for a preliminary process (described below), which is performed before a process of applying a resist liquid to the substrate 90 (hereinafter, referred to as "this coating process"). The nozzle initialization mechanism 7 not placed in the opening 32 is provided with a pre-coating mechanism 73 ° The pre-coating mechanism 73 is provided with a rotation mechanism 730 ′ which generates a rotational driving force, and a roller 73 1 which is rotated by the rotation mechanism 73 ° and stores a roller 731 The dewatering blades 733 of the substantially box-shaped frame body 732 and the attachments on the removal drum 73 are located inside. The roller 731 is disposed so as to expose a part from the opening on the upper surface of the frame 732, and the side surface of the cylinder is a coating surface coated with a resist liquid. The substrate processing apparatus 1 ejects the resist liquid from the slit nozzle 41 to the drum 731 during the preliminary coating process. In addition, the pre-coating process refers to the following process: Before the main coating process, a small amount of the resist liquid is sprayed from a slit nozzle moved above the drum 731 to pre-coat the resist liquid. It is placed on the roller 731. The substrate processing apparatus 1 in this embodiment makes the state of the slit nozzle 41 1 uniform in the γ-axis direction by a preliminary coating process. The coating surface of the roller 731 can be applied to the frame meat / 32 The inner part is immersed in the accumulated cleaning solution. That is, in the pre-coating process, the coating surface of the anti-corrosion cloth with a resist solution is applied on the surface. After being washed by the washing liquid, the pollutants adhering to the coating surface taken out of the washing liquid after washing are removed by the dewatering blade 733. In this way, the coating surface is rotated during a 73 rpm rotation of the drum It can be restored to a clean state, so the slit nozzle 4 will not be polluted during the preliminary coating process by the slit nozzle ^. The nozzle initialization mechanism 7 includes a nozzle cleaning mechanism 70. Fig. 3 shows Diagram of the structure of the nozzle cleaning mechanism 70. Nozzle cleaning machine Gogawa has a gas supply mechanism 71, a suction mechanism 72, a cleaning unit 74, a cleaning liquid supply mechanism, and a drive mechanism 76, and it is a mechanism that mainly performs the above-mentioned nozzle cleaning process. Moreover, although the illustration is omitted in FIG. 3 The gas supply mechanism 71, the suction mechanism 72, the cleaning liquid supply mechanism 75, and the drive mechanism are connected to the control unit 8 in a state capable of sending and receiving signals, and the control signals from the control unit 8 are controlled. The gas supply mechanism 71 is a mechanism that supplies nitrogen gas from a cylinder (not shown) to the cleaning unit 74 through a supply pipe. The nitrogen gas supplied to the cleaning unit 74 is ejected from the gas nozzle 710 in a specific direction (detailed) The substrate processing apparatus 1 in this embodiment uses a nitrogen gas as the inert gas, but the inert gas is not limited to the nitrogen gas. If it is a clean gas, even air can be used. After repeated addition of air). The suction mechanism 72 is a suction port provided in the washing section 74 through a waste pipe:: 0 (Fig. 5) sucks the washing liquid or is removed by the washing liquid The mechanism of the resist solution temple. Moreover, as the attraction mechanism 72, a conventionally well-known mechanism can be generally used. For example, it can also be a mechanism that uses a vacuum to generate clothes or repeatedly shrink the machine to attract. Gas-liquid separation box mechanism 98458.doc 200534925, etc. Also, for example, as long as the required force can be obtained, the exhaust equipment installed in the factory can also be used. The cleaning section 74 mainly includes a base 74 and a partition 741. , Ejection section, guide block 743, and support member 744, and has the following functions: in the nozzle cleaning process, cleaning and removal of the corrosion that adheres to the side of the front end of the slit nozzle 41 due to repeated formal coating processes As the base of each component of the cleaning unit 74, the cooking base 74 is connected to the driving mechanism 76, and can be reciprocated in the direction of the γ sleeve by the driving mechanism%. & The spacer 741 is a plate-shaped member having a specific thickness, and is inserted between the base 74o and the ejection portion 742 in a detachable state. In this embodiment, the partition 741 is fastened by the connection from the base 74o, and is fixed by a screw inserted toward the ejection portion 742 after the morning, and can be removed by loosening the screw. In this way, by appropriately exchanging the spacers 741 'disposed between the base 740 and the ejection portion 742 for those having different thicknesses, the z-axis direction position of the ejection portion% can be adjusted. As described below, 'the cleaning nozzle 750 is provided at a specific position of the ejection portion 742', and adjusting the position in the two-axis direction of the ejection portion 742 is equivalent to adjusting the height position of the cleaning nozzle 750 (the position in the direction). Therefore, the nozzle cleaning mechanism 70 in this embodiment can adjust the supply position of the cleaning liquid supplied by the cleaning liquid supply mechanism 75 to a biaxial direction. FIG. 4 is a front view of a & The ejection portion 742 is a member in which a gas nozzle 7 ι and a cleaning nozzle 配置 are arranged in a positional relationship with the temple. Pull + ^ Hunt b, and determine the position of the nitrogen gas in the gas nozzle 710 μ. Wash the supply position of the cleaning solution. In addition, 9S45S.doc 19-200534925, Z1 to Z4 in Fig. 4 indicate the Z-axis coordinates of the gas nozzle 71 and the cleaning nozzle 750 in the facing surface 742a. In addition, Z1 to Z4 in the ejection portion μ] in this embodiment are positioned at equal intervals, but it is not limited to this. _ Opposite side that is configured to face the front end of the slit nozzle 41 • Surface 742 & According to the inclination of the front end of the slit nozzle 41, it becomes an inclined surface with a specific angle of inclination to the plane of Ya. As shown in FIG. 3, a gas nozzle 71o and a cleaning nozzle 75o are distributed on the facing surface 742a, and are connected to φ and connected to the gas supply mechanism 71 and the cleaning liquid supply mechanism 75, respectively. The nitrogen gas supplied by the gas supply mechanism 71 is ejected from the gas nozzle 71 to the slit nozzle 41. Thereby, the cleaning liquid adhering to the slit nozzle 41 can be effectively volatilized (or blown off) by the nozzle cleaning process. In addition, the cleaning liquid sprayed from the self-cleaning nozzle 750 is impacted by the slit nozzle 41, and is scattered to a number of locations in the south and at a moderate position during spraying. As shown in FIG. 4, in the substrate processing apparatus of the present target form, the gas nozzle 710 is provided so that the supply position of the nitrogen gas from the gas nozzle 71 is positioned above the scattering position of the cleaning liquid, and the gas nozzle 710 is set at Above the cleaning nozzle 750. This allows the slit nozzle 41 to be dried more effectively during the nozzle drying process. The gas nozzle 7 10 includes a lower gas nozzle 710a and an upper gas nozzle 710b. In the facing surface 742 &, the lower gas nozzle 71 (^ is arranged at the height position, and the upper gas nozzle 710b is arranged at the south position Z4 above the lower gas nozzle 710 &. Also, the cleaning nozzle 750 Contains the lower washing nozzle 750a and the upper washing nozzle 75〇b. In the facing surface 742a, the lower washing nozzle 750a is arranged at the 21 height position, and the upper washing nozzle 750b is arranged at the lower gas nozzle 75〇a 98458. doc -20- 200534925 above Z2 height position. Figure 5 is a perspective view of the guide block 7 4 3 of the washing section 74. The guide block 743 is a rod-shaped member having a substantially uniform cross section in the Y-axis direction. The thickness in the X-axis direction is equal to or larger than the width (X-axis width) of the nozzle 41a of the slit nozzle 41, and is less than the X-axis width of the support member 744. The guide block 743 is fixedly supported by the pair of support members 744 to support the γ-axis direction. The two end portions are secured with respect to the base 740 via the support member 744. That is, the lower side of the guide block 743 is separated from the base 740, and a space is formed between the base 74 and the guide block 743. The 'base' in the washing section 74 in this embodiment The relative position of the seat 740 and the guide block 743 is fixed. The upper surface of the guide block 743 is an approaching surface 743a close to the front end of the slit nozzle 41. The approaching surface 743a is bent downward at both ends toward the X-axis direction. In addition, the side of the guide block 743 facing the ejection portion 742 is a guide surface 743b substantially parallel to the YZ plane. The guide surface is flung away from the ejection portion 742, so there is a space between them. The (-Y side) support member 744 of the pair of support members 744 is provided with a suction port 720 and is connected to the suction mechanism 72 (FIG. 3) through the above-mentioned waste pipe. The suction port 720 passes through the support member 744. The hole is provided below the guide block 743 mounted on the support member 744. With this, if the suction mechanism 72 starts to attract, the space under the guide block 743 will be attracted. Furthermore, it can be configured as follows: A suction port 720 is provided in the support member 744 of the two, and the suction mechanism is carried out from the respective directions to perform suction. Returning to FIG. 3, the cleaning liquid supply mechanism 75 is a plastic bottle containing a cleaning liquid or a pump of 98458.doc -21 · 200534925 liquid. Pumps, etc. The cleaning liquid is supplied to the cleaning unit 74 through a supply pipe. The driving mechanism 76 is a mechanism that moves the cleaning unit 74 to the Y-axis direction. As the driving mechanism 76, a straight motor using a rotary motor and a round head bolt can be used. Fig. 6 is a diagram showing the state where the ejection portion 742 is moved together with the slit nozzle 41. In addition, the position of the slit nozzle 41 shown in Fig. 6 is hereinafter referred to as "cleaning position". The front end portion 742 of the slit nozzle 41 in the cleaning position moves back and forth in the Y-axis direction, so that the gas nozzle 710 and the cleaning nozzle 75 provided in the ejection portion 742 can scan the slit nozzle "front end portion" . Further, the 'driving mechanism 76 can perform not only the operation of scanning the slit nozzle 41 in the cleaning section 74, but also the operation of retracting the cleaning section 74 from below the slit nozzle 41. Therefore, when a person is inserted at the front end portion of the slit nozzle 41 into the standby box π described below, the cleaning portion 74 and the slit nozzle 41 can not interfere with each other. Returning to Fig. 2 ', the standby box 77 is a substantially box-shaped member having substantially the same size as the width of the slit nozzle 41 in the longitudinal direction. Anti-I insecticide liquid solvent in the standby box 77 0 standby each 7 7 in the knockout &, "... No formal coating treatment has been implemented for a long time, Si Bei J prepared with a slit pout 41 $, f & amp ...... 41 items near the mouth of the mouth. The mechanism is provided in such a way that the resist liquid does not mix with each other to produce dryness or deterioration. No. θ is provided on the standby box 77 to open a slit to the inside. Introduce. P is inserted and then lowered to #, square; in the standby mode, the self-washing position is moved down to a specific position in the Z-axis direction. J). The slit 啧 嘴 41 位 # is called the standby position and the end becomes Λ Of the white M Qixia T 'slit nozzle 41, ~ Feng Feng inserts it from the opening to the state inside the box 77 to be removed, and ... When the heart 4 standby position, the slit nozzle 41 is exposed before 98458.doc > 22 -200534925 In the solvent environment, the drying of the resist solution will be suppressed. Return to Z Figure 1. Inside the control unit 8 is provided with a calculation unit 80 that processes various data according to programs, and a memory unit 81 that stores programs or various data. In addition, the front panel has the necessary instructions for the input of the manipulator for the substrate processing device. The operation section 82 and the display section 83 for displaying various data. '' 4 The work section 8 is electrically connected to the mechanisms attached to the body 2 by the boundary lines not shown in FIG. 1. The control section 8 Control is based on the input signal from the operation unit 82, or signals from various sensors (not shown), such as: lifting movement of descent = hibiscus, movement movement of the moving mechanism 5, antiseptic supply, 4 structure The resist liquid supply operation of 6. In addition, the operations of the drive mechanism, the rotation mechanism, and the valves of the nozzle initialization mechanism 7 are controlled, and the supply flow of the gas supply mechanism 71 and the cleaning liquid supply mechanism is controlled. Furthermore, “specifically” are RAMs for reading data temporarily, read-only, and magnetic disk devices, which are equivalent to the memory section 8 or a storage medium such as a compact optical disk or a memory card, and the like. Read the second class, buttons and switches (including keyboard or slide ^ 4〇 ^ 4 J brother looking for a lot of work. P82. Or, it can also be a display panel such as the touch panel display and display panel 83 Those who do the same. The LCD or various lights are equivalent to the display unit U The above is the description of the substrate processing device σ in this embodiment. The function and configuration of 1 is followed by the nozzle cleaning mechanism 70. The cleaning slit sprays ^,, + + only when the end of the bucket 1 is operated. (Yuzu washing process) to explain. Figure 7 to ^ ^ ^ Figure of the situation in the washing area of Ding Yi Hegai. Furthermore, the narrow position of Figure 1 to 98 in Figure 7 to 9 is 98458.doc -23- 200534925 is a washing position. In FIGS. 7 to 9, the supporting member 744 is omitted, and the guide block 743 and the slit nozzle 41 are shown in cross section. First, the control unit 8 controls the drive mechanism 76 before the nozzle washing process, so that the washing unit 74 in the retracted state is moved to a position where the slit nozzle 41 is subjected to the washing process. In addition, the control unit 8 controls the elevating mechanisms 43, 44 and the moving mechanism 5 in parallel with this process, thereby moving the slit nozzle 41 to the cleaning position. Thereby, the slit nozzle 41 and the cleaning portion 74 have the arrangement relationship shown in Fig. 7. At this time, as shown in Fig. 7, the resist solution is adhered to the side surface of the front end portion of the slit nozzle 41 due to the repeated coating process. Further, in the substrate processing apparatus 1 in this embodiment, the distance (approach distance) between the lower end of the slit nozzle 41 and the approach surface 743a of the guide block 743 during the nozzle cleaning process is positioned to be about 1.5 mm, and positioned. The cleaning position of the slit nozzle 41 is, of course, not limited to this. The approach distance can also be set appropriately in advance according to the nature of the cleaning liquid used or the discharge flow rate. When the preparation for the nozzle cleaning process is completed by the movement operation so far, the valve is opened by the cleaning liquid supply mechanism 75 to start the supply of the cleaning liquid. As shown in FIG. 8, the cleaning nozzle 75 The cleaning liquid is sprayed from the side of the slit nozzle. The suction mechanism 72 starts suction from the suction port 720 in parallel with the operation of the cleaning nozzle 750 to spray the cleaning liquid. FIG. 10 is an enlarged view of the state shown in FIG. 8. As shown in FIG. 10, the cleaning liquid (cleaning liquid LQ) is sprayed from the lower cleaning nozzle 75a and the upper cleaning nozzle, and the cleaning liquid sprayed is called to impact the side surface of the front end of the slit nozzle 41. This cleaning slit nozzle 41. 98458.doc -24- 200534925 At this time, the anti-name agent liquid r adhering to the side surface of the front end of the slit nozzle 41 is dissolved by the cleaning liquid Lq sprayed from the lower cleaning nozzle 750a. It is expected that on the side of the front end of the slit nozzle 41, there will be a mixed liquid of the resist liquid r and the cleaning liquid LQ (a mixed liquid with a higher concentration of the resist liquid R). Because in the previous device, the cleaning nozzle The height position is arranged so that there is a step difference, so the mixed liquid will form Rl deposit of 23 shown in FIG.

然而,本實施形態中之基板處理裝置丨除下方洗淨噴嘴 750a以外尚具備上方洗淨噴嘴75〇b。故而,如圖ι〇所示, 藉由上方洗淨喷嘴750b,可將清洗液:^供給至進而高於 下方洗淨噴嘴750a之清洗液LQ之供給位置的位置。 即,藉由上方洗淨喷嘴75013所供給之清洗液可將藉 由下方洗淨噴嘴750a供給清洗液lq所生成之混合液,進而 自上方向下方沖洗。故而,由於不致如先前裝置般殘留有 條紋狀附著物RL,而提高喷嘴洗淨處理中之洗淨效果,因 此可良好恢復狹縫喷嘴41之狀態。 猎由洗淨噴嘴75〇所喷出之清洗液^將沿著狹縫喷嘴^ 之前端部側面流向下方’其-部分會附著於狹縫喷嘴41之 Z面=而’附著於狹縫噴嘴41T®之清洗液叫藉由與 4 a接觸而將迅速沿著接近面仙受到引導, ^兩側之W3卜藉由該流動可將狹 面加以洗潘 4 思貝角之下 #mR ”且迅速除去藉由清洗液叫而溶解之Μ 面勝:而:青洗液LQ得以引導至導向組⑽之導向 4々丨L向下方0 如此’藉由接近面743a成為向下方彎曲之曲面,洗淨部 98458.doc -25- 200534925 74可迅速排出清洗液LQ。又,藉由導向組塊743具有導向 面743b,可進而迅速排出附著於狹縫喷嘴41下面之清洗液 LQ,上述導向面743b係將藉由洗淨液供給機構乃所供給 之清洗液LQ導向下方者。 如上所述,清洗液Lq自洗淨喷嘴75〇喷出之期間,吸引 機構72將吸引狹縫喷嘴41之下方。如圖ι〇所示,該吸引機 構72之吸引力藉纟導向組塊%以不會直接作用於喷口仏 肖圍之方式得以遮斷。即,用於洗淨之清洗液lq將自形 成於噴出部742與導向面743b之間的空間之上部開口部(為 沿著Y軸方向之隙縫狀開口部)受到吸引。 填充於狹縫喷嘴41内之抗钱劑液R主要藉由作用於(-Z) 方向之力知以吸出。然而,如圖J 〇中作為向下箭頭所示, 右吸引機構72之吸引力作用於自喷口 41a分離之位置,則 於喷口 41a周圍該吸引力將主要作用於χ軸方向,而作用於 (7)方向之吸引力會減弱。 • 於洗淨部74中,吸引機構Μ之吸引力作用於⑺方向之 位置:系藉由導向組塊743之導向面743b之位置而定位。故 而’藉由調整導向組塊743之又轴方向厚度,可調 喷口…之(-Z)方向之吸引力。 ' 、:本實施形態中之洗淨部74中,以喷口 4u周圍大致成 為抗钱劑液R之停滞點之方式,預先決定導向組塊M3之厚 度,藉此抑制抗㈣液R之流出。再者,藉由吸引力所作 用之位置位於狹縫噴嘴41之前端部側面之下方,可迅速將 示去附著於刖端部側面之抗蝕劑液反之清洗液Lq向下方吸 98458.doc •26- 200534925 引:非出。χ,藉ώ導向組塊743之乂轴方向之厚度,定位喷 出Ρ 742與導向組塊743之間隔,但該間隔越窄則吸弓|機構 72之吸引力會越弱’從而作用於狹縫喷嘴41之 的吸引力將會增加。 J面 藉此,由於本實施職中之噴嘴洗淨機構7〇藉由導向組 塊743之厚度’可減弱作用於噴口仏内之抗蝕劑液r的吸 引機構72之吸引力’故而即使使用多於先前裝置之清洗液 • LQ,亦可藉由適宜增大吸引機構72之吸引力,迅速吸引 排出所使用之清洗液LQ。因此,可提高喷嘴洗淨處理中 之洗淨效果。 以與來自洗淨液供給機構乃之清洗液LQ的供給動作、 以及由吸引機構72引起之吸引動作並行之方式,實施洗淨 部74之掃描動作。即,驅動機構%實施下述動作:沿著γ =方向於橫跨狹縫噴嘴41之全部寬度,使洗淨部Μ往返移 _、<藉此’於橫跨狹縫噴嘴41之¥軸方向之全部寬度,自洗 淨策嘴750嘴出清洗液LQ,從而進行噴嘴洗淨處理。如 此,藉由驅動機構76實施洗淨部74之掃描,藉此例如益需 橫跨狹縫噴嘴41之全部寬度配置洗淨喷嘴75〇,即可實現 I置之小型化。再者,重複該掃描動作之次數係任意的, 並根據實施前次噴嘴洗淨處理後所實行之正式塗佈處理次 . 數’或所使用之抗_液錄質等,預先設定恰當數值。 若特定次數之掃描動作結束,則洗淨液供給機構75將停 止供給清洗液LQ。藉此,喷出藉由洗淨喷嘴75〇之清洗液 98458.doc -27· 200534925 LQ停止。進而,氣體供給機構 體喷嘴710噴出氮氣體。再者,士# 、給氮氣體,自氣 對洗淨部74之掃描動作。 亥』間亦繼續驅動機構76 如此,自氣體噴嘴71〇朝 氣體,並且使洗淨部74沿著γ轴方=1之則端部喷出氮 於狹縫_之清心燥附著 於喷出部?42之對向面⑽中 f如^所示, 於高於全部洗淨喷嘴75()之^ 體贺嘴710設置 將氮氣體供給至附著有、、主因此氣體喷嘴710可有效 。 有α洗液LQ之區域。再者,用以# 熘清洗液LQ的掃描動作 乙 ㈣之_人數亦可預先設定特;t數值。 槿76Γ :人“描動作結束,則控制部8藉由使·動機 構76停止從而結束洗淨部74之掃描動作,並 給機構71使之停止供认务a触 市J礼體供 藉此’停止喷出來自氣體 、 之氮乳肢,用以乾燥狹縫噴嘴41之掃描動作结 束。 σ 、藉由上述動作’本實施形態中之基板處理裝置i之嘴嘴 洗淨處理得以結束。再者,於喷嘴洗淨處理結束後,於預 備:k佈栈構73中貫施預備塗佈處理,調整狹縫喷嘴4】之狀 恶後貫施正式塗佈處理。其令’喷嘴洗淨處理後之動作並 非僅限於此,如若實施正式塗佈處理為止耗費時間較多, 則亦可使狹縫喷嘴41移動至待機位置,以防止狹縫噴嘴Μ 之抗蝕劑液R的乾燥。即,藉由驅動機構76使洗淨部以自 狹縫噴嘴4 1之下方退避,並進而使狭縫喷嘴4〗自洗淨位置 降下,使其前端部暴露於待機盒77内之溶劑環境。 98458.doc -28- 200534925 藉由上述方式,如圖7等所示,本實施形態中之基板處 理裝詈1择M -u、话, ^呈货、错由導向組塊743具有狹縫噴嘴41之喷口 41a的 Λ 白I度以上之厚度,並配置於狹縫喷嘴41之噴口 41 a之下方周圍,且吸引機構72之吸引口 72〇自導向組塊 3下方員&吸引,並且以狹縫喷嘴41之噴口 41a周圍大致 成為杬蝕劑液R之停滯點之方式調整吸引機構Μ之吸引 力,藉此可藉由吸引排出迅速排出洗淨液與污染物,並且 可抑制自噴口41a吸出狹縫喷嘴41内之抗蝕劑液r。 又,導向組塊743具有將藉由洗淨液供給機構乃所供給 之清洗液LQ導向下方之導向面74扑,藉此可進而迅速排 出所使用之清洗液LQ。 由於可藉由具備調整來自洗淨液供給機構75之清洗 液LQ之供給位置的分隔物74丨並根據狀況變更洗淨位置, 故而例如即使附著有抗蝕劑液R之範圍有所不同時亦可靈 活對應。 1 狀 七、、、’°位置之調整藉由具有特定厚度之分隔物74 1的 Ρ而得以只現,藉此無需複雜機構即可易於實現。 又,可藉由具備使洗淨部74沿著狹縫喷嘴41之長度方向 私動之驅動機構76從而實現裝置整體之小型化。 又,精由具備將I氣體供給至狹縫噴嘴41之前端部的氣 版i、給機構71,且來自氣體供給機構71之氮氣體之供^位 置設為來自洗淨液供給機構75之清洗液LQ之供給位:之 上方,從而可促進洗淨液之乾燥。 又,將來自上方洗淨喷嘴7湯之清洗液LQ之供給位 98458.doc -29- 200534925 置,以對於來自下方洗淨喷嘴750a之清洗液LQ之供給位 置,高度方向互為不同之方式而配置,藉此可防止條紋狀 附著物RL(圖23)殘留於狹缝噴嘴41之前端部側面。故而, 可提高洗淨效果。However, the substrate processing apparatus in this embodiment includes an upper cleaning nozzle 750b in addition to the lower cleaning nozzle 750a. Therefore, as shown in FIG. 10, by using the upper cleaning nozzle 750b, the cleaning liquid can be supplied to a position higher than the supply position of the cleaning liquid LQ of the lower cleaning nozzle 750a. That is, the cleaning liquid supplied from the upper cleaning nozzle 75013 can supply the mixed liquid generated by supplying the cleaning liquid 1q from the lower cleaning nozzle 750a, and then rinse from the upper direction downward. Therefore, since the stripe-like attachment RL does not remain as in the previous device, and the cleaning effect in the nozzle cleaning process is improved, the state of the slit nozzle 41 can be restored well. The cleaning liquid sprayed from the cleaning nozzle 75 will flow down the side of the front end of the slit nozzle ^ and its part will be attached to the Z surface of the slit nozzle 41 = and 'attached to the slit nozzle 41T' The cleaning solution of ® is called to be guided along the approaching surface by contacting 4a. ^ The W3 on both sides can be used to wash the narrow surface by the flow. 4 Spear angle #mR "and quickly Remove the M surface that is dissolved by the cleaning solution: And: the green cleaning liquid LQ can be guided to the guide group ⑽ of the guide 4々 丨 L is downward 0, so 'the approach surface 743a becomes a curved surface curved downward and washed 98458.doc -25- 200534925 74 can quickly discharge the cleaning liquid LQ. Moreover, the guide block 743 has a guide surface 743b, and the cleaning liquid LQ attached to the slit nozzle 41 can be quickly discharged. The guide surface 743b is The cleaning liquid LQ supplied by the cleaning liquid supply mechanism is guided to the lower side. As described above, while the cleaning liquid Lq is sprayed from the cleaning nozzle 75 °, the suction mechanism 72 will suck the slit nozzle 41 below. As shown in Figure ι, the attraction of the attraction mechanism 72 is guided by the block% The method that does not directly act on the nozzle and the perimeter of the nozzle is blocked. That is, the cleaning liquid lq for cleaning will be formed from the opening above the space formed between the ejection portion 742 and the guide surface 743b (along the Y axis). The slit-shaped opening in the direction is attracted. The anti-money liquid R filled in the slit nozzle 41 is mainly sucked out by the force acting in the (-Z) direction. However, it is shown as a downward arrow in FIG. As shown, the attraction force of the right suction mechanism 72 acts on the position separated from the nozzle 41a, and the attraction force around the nozzle 41a will mainly act in the x-axis direction, and the attraction force acting in the direction (7) will weaken. In the cleaning section 74, the attraction force of the suction mechanism M acts on the position in the ⑺ direction: it is positioned by the position of the guide surface 743b of the guide block 743. Therefore, 'by adjusting the thickness of the guide block 743 in the axial direction, The attractive force in the (-Z) direction of the adjustable nozzle. ': In the cleaning section 74 in this embodiment, the guide block is determined in advance so that the periphery of the nozzle 4u becomes the stagnation point of the anti-money liquid R. The thickness of M3, thereby suppressing the outflow of anti-rhenium R. In addition, by the position of the attraction force being located below the side surface of the front end of the slit nozzle 41, it is possible to quickly suck the resist liquid attached to the side of the end surface and the cleaning liquid Lq to the bottom 98458.doc • 26 -200534925 Citation: non-extracting. Χ, the thickness of the azimuth direction of the guide block 743 is used to locate the interval between the spray 742 and the guide block 743, but the narrower the interval is, the suction bow will be. The weaker 'the attraction force acting on the slit nozzle 41 will be increased. As a result, the J-face will reduce the action on the nozzle due to the thickness of the guide block 743 in the nozzle cleaning mechanism 70 in this implementation. The attraction force of the suction mechanism 72 of the resist liquid r is included. Therefore, even if more cleaning fluids • LQ than the previous device are used, the suction force of the suction mechanism 72 can be increased to appropriately attract and discharge the used cleaning fluid. LQ. Therefore, the cleaning effect in the nozzle cleaning process can be improved. The scanning operation of the cleaning unit 74 is performed in parallel with the supply operation of the cleaning liquid LQ from the cleaning liquid supply mechanism and the suction operation by the suction mechanism 72. In other words, the drive mechanism% performs the following operation: the cleaning section M is moved back and forth along the γ = direction across the entire width of the slit nozzle 41, and thereby 'on the ¥ axis of the slit nozzle 41 In the entire width of the nozzle, the cleaning liquid LQ is discharged from the 750 nozzles of the cleaning nozzle to perform the nozzle cleaning process. In this way, by the scanning of the cleaning unit 74 by the driving mechanism 76, for example, it is necessary to arrange the cleaning nozzle 75 across the entire width of the slit nozzle 41, so that the size of the I unit can be reduced. In addition, the number of times the scanning operation is repeated is arbitrary, and an appropriate value is set in advance according to the number of times of the official coating process performed after the previous nozzle cleaning process is performed or the anti-liquid recording quality used. When the scanning operation is completed a specific number of times, the cleaning liquid supply mechanism 75 stops supplying the cleaning liquid LQ. As a result, the cleaning liquid 98458.doc -27 · 200534925 LQ which was sprayed through the cleaning nozzle 75 was stopped. Further, the gas supply mechanism body nozzle 710 ejects nitrogen gas. Furthermore, the scanning operation of the cleaning unit 74 by the self-aspirating nitrogen gas and the nitrogen gas is performed. In this way, the mechanism 76 is continued to drive the gas from the gas nozzle 710, and the cleaning portion 74 is sprayed with nitrogen at the end along the γ-axis side = 1, and the clean and dry adheres to the discharge portion. ? As shown by ^ in the facing surface of 42, the body nozzle 710 which is higher than all the cleaning nozzles 75 () is provided. The nitrogen gas is supplied to the main body, so that the gas nozzle 710 is effective. Areas with alpha lotion LQ. In addition, the scanning operation with # 熘 cleaning liquid LQ can also be set in advance; t value. Hibiscus 76Γ: The person "the end of the drawing operation, the control unit 8 stops the scanning operation of the washing unit 74 by stopping the moving mechanism 76, and stops the mechanism 71 for the recognition service. The scanning operation for stopping the ejection of nitrogen from the gas and nitrogen to dry the slit nozzle 41 is completed. Σ, the above-mentioned operation 'the nozzle cleaning process of the substrate processing apparatus i in this embodiment is completed. After the nozzle cleaning process is completed, a preliminary coating process is performed in the preparation: k cloth stack structure 73, and the slit nozzle 4] is adjusted to form a formal coating process after the state is bad. The operation is not limited to this. If it takes a long time until the main coating process is performed, the slit nozzle 41 can be moved to the standby position to prevent the resist liquid R of the slit nozzle M from drying. That is, by The driving mechanism 76 retracts the cleaning section from below the slit nozzle 41, and further lowers the slit nozzle 4 from the cleaning position, so that the front end portion thereof is exposed to the solvent environment in the standby box 77. 98458.doc- 28- 200534925 With the above method, as shown in Figure 7 As shown in the figure, the substrate processing device in the present embodiment is M-u. If it is delivered, the guide block 743 has a thickness of Λ white or more than the I of the nozzle 41 of the slit nozzle 41, and is arranged at Around the nozzle 41a of the slit nozzle 41, and the suction port 72 of the suction mechanism 72 is sucked from below the guide block 3, and the area around the nozzle 41a of the slit nozzle 41 becomes roughly the etchant liquid R The attraction force of the suction mechanism M is adjusted by the stagnation point, whereby the cleaning liquid and pollutants can be quickly discharged by suction and discharge, and the resist liquid r in the slit nozzle 41 can be suppressed from being sucked out from the nozzle 41a. The block 743 has a guide surface 74 that guides the cleaning liquid LQ supplied by the cleaning liquid supply mechanism to the lower side, thereby allowing the used cleaning liquid LQ to be quickly discharged. The partition 74 of the supply position of the cleaning liquid LQ of the supply mechanism 75 changes the cleaning position according to the situation, so that, for example, even if the range of the resist liquid R is different, it can be flexibly coped with. 1 七七 、、、 '° position adjustment by The partition P having a specific thickness 74 1 can be realized only by this, which can be easily realized without requiring a complicated mechanism. Further, it can be provided with a driving mechanism that moves the cleaning portion 74 privately along the length direction of the slit nozzle 41 76, so that the entire device can be miniaturized. In addition, the gas supply device 71 for supplying I gas to the front end of the slit nozzle 41 and the supply mechanism 71 are provided, and the supply position of the nitrogen gas from the gas supply mechanism 71 is set to The supply level of the cleaning liquid LQ from the cleaning liquid supply mechanism 75: above, so as to promote the drying of the cleaning liquid. In addition, the supply level of the cleaning liquid LQ from the cleaning nozzle 7 soup above is 98458.doc -29- 200534925 is arranged so that the height direction of the supply position of the cleaning liquid LQ from the lower cleaning nozzle 750a is different from each other, thereby preventing the stripe-like attachment RL (Fig. 23) from remaining on the front end of the slit nozzle 41 Department side. Therefore, the washing effect can be improved.

再者,本實施形態中之基板處理裝置1構成為下方洗淨 噴嘴750a以及上方洗淨喷嘴750b可同時喷出清洗液lq。然 而,例如藉由其他系統之配管將下方洗淨喷嘴75〇a與上方 洗淨贺嘴75Ob連通連接於洗淨液供給機構75,亦可控制如 下··於去路上之掃描(藉由喷出部742之狹縫喷嘴41的掃描) 中僅實施下方洗淨喷嘴750a之喷出,而於返路上之掃描中 僅實施上方洗淨喷嘴750b之喷出。 又,自洗淨噴嘴750噴出清洗液LQ且實施掃描動作時, 亦可並行噴出氮氣體。該情形時,由於所謂氮氣體之幕簾 形成於洗淨噴嘴750之上方,因此可防止清洗液LQ之薄霧 等飛散於狹縫噴嘴41上方。 <2·第二實施形態> 第貝把形恶係構成為吸引機構72之吸引口 720設置於 喷口…之下方,故自導向組塊743之下方吸引清洗液lq, 然而吸引機構72之吸引位置(設置有吸引口之位置)並非僅 / 11係表示根據如此之原理而構成之第二實施形態中之 :鳴洗:機構7。之構成的圖。又,圖]2係第二實施形態中 之噴出部之對向面的正視圖。 本實施形態中之喷嘴洗淨機構7q具傷洗淨部%而代替 98458.doc -30^ 200534925 第一貫施形態中之洗淨部74,於此方面上與第一實施形態 中之噴嘴洗淨機構7〇有所不同。再者,關於與第一實施形 態中之基板處理裝置丨大致相同之構成,附有相同符號並 適當省略說明。Furthermore, the substrate processing apparatus 1 in this embodiment is configured such that the lower cleaning nozzle 750a and the upper cleaning nozzle 750b can simultaneously eject the cleaning liquid 1q. However, for example, the lower cleaning nozzle 75〇a and the upper cleaning nozzle 75Ob are connected to the cleaning liquid supply mechanism 75 through the piping of another system, and it can also be controlled as follows: Scanning on the way (by ejection In the scanning of the slit nozzle 41 of the portion 742), only the discharge of the lower cleaning nozzle 750a is performed, and in the scan of the return path, only the discharge of the upper cleaning nozzle 750b is performed. When the cleaning liquid LQ is ejected from the self-cleaning nozzle 750 and a scanning operation is performed, a nitrogen gas may be ejected in parallel. In this case, since a so-called nitrogen gas curtain is formed above the cleaning nozzle 750, it is possible to prevent mist or the like of the cleaning liquid LQ from being scattered above the slit nozzle 41. < 2 · Second Embodiment > Dibei configured the suction system 720 as the suction port 720 of the suction mechanism 72 below the spout ... Therefore, the cleaning liquid lq is suctioned from below the guide block 743, but the suction mechanism 72 The suction position (the position where the suction port is provided) is not only / 11, which means that in the second embodiment constructed based on such a principle: Ming washing: mechanism 7. Made up of figures. Fig. 2 is a front view of the facing surface of the discharge portion in the second embodiment. The nozzle cleaning mechanism 7q in this embodiment has a wound cleaning section% instead of 98458.doc -30 ^ 200534925 The cleaning section 74 in the first embodiment is in this respect similar to the nozzle cleaning in the first embodiment. The net institution 70 is different. It should be noted that the same components as those of the substrate processing apparatus in the first embodiment are denoted by the same reference numerals, and descriptions thereof are appropriately omitted.

喷出部745作為與位於洗淨位置的狹縫噴嘴41前端部側 面相對向之面,具有對向面745a以及一對對向面74外。對 向面745a係相當於第一實施形態中之喷出部742之對向面 742a之面,如圖12所示,與第一實施形態大致相同,配置 有氣體噴嘴71 〇以及洗淨喷嘴75〇。 一對對向面745b作為大致平行於對向面745a之面,設置 於對向面744之丫軸方向之兩側。又,各對向面74几係以 成為對於洗淨位置中之狹縫噴嘴41之前端部側面,更接近 對向面745a位置之方式而形成,並分別設置有吸引口 721。介以吸引配管,吸引口 721連通連接於吸引機構μ。 圖13係表示於第二實施形態中之噴嘴洗淨處理中,清洗 液LQ自洗淨噴嘴750噴出時之情形的圖。再者,圖之 各部分係作為平行於XZ平面之面中,與對向面7仏交又^ 面之剖面而得以表示。 圖Π中,雖然圖示省略,但於本實 个貝知形怨中之基座740 中,於處於導向組塊743下方之位置中 且丫潑/夜用排出口 740a 沿著Y軸方向設置為隙縫狀,故自排 那出口 740a排出藉由導 向組塊743得以導向下方之清洗液lq。 V 稭此,可補充吸引 機構72之吸引排出。 98458.doc -31 - 200534925 再者’圖14中之各部分作為平行於χζ平面之面中,與吸 引口 721交又之面之剖面而得以表示。 如圖14所示,於本實施形態中之基板處理裝置丨中,由 於吸引口 721位於處於洗淨位置的狹縫喷嘴41之前端部側 方,因此自狹縫喷嘴41之前端部側方實施吸引機構72之吸 引。故而,作用於填充至狹縫噴嘴41内之抗蝕劑液R的吸 引機構72之吸引力將弱於自狹縫噴嘴41之前端部之下方實 施吸引之情形。 如此,本實施形態中之基板處理裝置丨藉由將吸引口 6又置於喷出部745之對向面745b,並自狹縫喷嘴41之前端 部側方實施清洗液LQ之吸引,並以喷口…之周圍大致成 為抗蝕劑液R之停滯點之方式得以調整。故而,由於即使 增加吸引機構72之吸引力,亦可抑制將抗钮劑液r吸出至 狹缝喷嘴41外之現象之產生,因此可提高噴嘴洗淨處理之 洗淨效果。 又,對向面745b與對向面⑽相比,更接近於狹縫噴嘴 狀前端部側面。故而,如將圖13與圖14加以比較則可明 瞭’吸引口 721係以與洗淨噴嘴75〇相比,更接近於 嘴41之前端部侧面之方式配置。如此,藉由吸引口 721接 娜縫喷嘴41之前端部側面,可有效吸引排出附著於該 前端部側面之清洗液LQ。 再者,圖14中為方便圖示,表示導向組塊743周圍是否 存在清洗液LQ’但實際上於洗淨部7 淨的清洗液LQ之一部分❹由導…雨…用於洗 刀知猎由導向組塊743導向下方,並 98458.doc -32- 200534925 自排出口 740a排出。 如上所述,由於即使於第二實施形態中之基板處理裝置 1中亦將吸引口 72 1設置於狹缝喷嘴41之前端部側方,並 自該位置實施由吸引機構72引起之吸引,藉此與第一實施 形態中之基板處理裝置1相同,可以噴口 41a之周圍大致成 為抗蝕劑液R之停滯點之方式加以調整,故而可獲得相同 效果0 又,由於藉由自設置於狹縫喷嘴41之前端部下方的排出 口 740a排出清洗液LQ,可不需依賴於吸引機構”而排出清 洗液LQ,因此可採用小容量機構作為吸引機構72。或, 由於可迅速排出清洗液Lq,故而可提高噴嘴洗淨處理之 洗淨效果。 又,藉由具備配置於狹縫喷嘴41之前端部下方,將清洗 液LQ導向下方且具有接近面74以以及導向面”扑的導向組 塊743,可自排出口 74〇a更有效排出清洗液lq。The ejection portion 745 has a facing surface 745a and a pair of facing surfaces 74 as a surface facing the side surface of the front end portion of the slit nozzle 41 located at the cleaning position. The opposing surface 745a is a surface corresponding to the opposing surface 742a of the ejection portion 742 in the first embodiment. As shown in FIG. 12, it is substantially the same as the first embodiment, and is provided with a gas nozzle 71o and a cleaning nozzle 75. 〇. The pair of facing surfaces 745b are substantially parallel to the facing surface 745a, and are provided on both sides in the y-axis direction of the facing surface 744. Each of the facing surfaces 74 is formed so as to be closer to the side surface of the front end of the slit nozzle 41 in the cleaning position and closer to the facing surface 745a, and is provided with suction ports 721, respectively. The suction port 721 is connected to the suction mechanism μ via a suction pipe. Fig. 13 is a view showing a state when the cleaning liquid LQ is discharged from the cleaning nozzle 750 in the nozzle cleaning process in the second embodiment. In addition, each part of the figure is shown as a cross section of the plane parallel to the XZ plane, which intersects the opposite plane 7 and ^. In the figure Π, although the illustration is omitted, in the base 740 of the real betrothal complaint, it is located below the guide block 743 and the yam / night discharge port 740a is arranged along the Y-axis direction Since it is slot-shaped, the cleaning liquid lq which can be guided to the lower side by the guide block 743 is discharged from the discharge port 740a. In this way, the suction and discharge of the suction mechanism 72 can be supplemented. 98458.doc -31-200534925 Furthermore, each part in FIG. 14 is shown as a cross section of a surface parallel to the χζ plane and intersecting with the suction inlet 721. As shown in FIG. 14, in the substrate processing apparatus of this embodiment, the suction port 721 is located on the side of the front end of the slit nozzle 41 in the cleaning position, so it is implemented from the side of the front end of the slit nozzle 41. Attraction of the attraction mechanism 72. Therefore, the attraction force of the suction mechanism 72 of the resist liquid R filled in the slit nozzle 41 will be weaker than when suction is performed from below the front end of the slit nozzle 41. As described above, in the substrate processing apparatus of this embodiment, the suction port 6 is placed on the opposite surface 745b of the ejection portion 745, and the cleaning liquid LQ is suctioned from the side of the front end of the slit nozzle 41, and The manner in which the periphery of the nozzles ... approximately becomes the stagnation point of the resist liquid R is adjusted. Therefore, even if the attraction force of the suction mechanism 72 is increased, the phenomenon that the anti-buttoning agent liquid r is sucked out of the slit nozzle 41 can be suppressed, so that the cleaning effect of the nozzle cleaning process can be improved. Further, the facing surface 745b is closer to the side surface of the slit nozzle-shaped tip portion than the facing surface ⑽. Therefore, when comparing Fig. 13 and Fig. 14, it is clear that the 'suction port 721 is arranged closer to the side surface of the front end of the nozzle 41 than the cleaning nozzle 75o. In this way, by connecting the suction port 721 to the side surface of the front end of the slit nozzle 41, the cleaning liquid LQ adhering to the side surface of the front end portion can be effectively sucked and discharged. In addition, FIG. 14 is a diagram for convenience, showing whether there is a cleaning liquid LQ 'around the guide block 743, but a part of the cleaning liquid LQ that is actually cleaned in the cleaning section 7 is guided by ... rain ... It is guided downward by the guide block 743, and is discharged from the discharge port 740a at 98458.doc -32- 200534925. As described above, even in the substrate processing apparatus 1 in the second embodiment, the suction port 72 1 is provided on the side of the front end of the slit nozzle 41, and suction by the suction mechanism 72 is performed from this position. This is the same as the substrate processing apparatus 1 in the first embodiment, and can be adjusted in such a manner that the periphery of the nozzle 41a becomes a stagnation point of the resist liquid R. Therefore, the same effect can be obtained. The discharge port 740a under the front end of the nozzle 41 discharges the cleaning liquid LQ without relying on the suction mechanism. Therefore, a small-capacity mechanism can be used as the suction mechanism 72. Or, because the cleaning liquid Lq can be quickly discharged, The cleaning effect of the nozzle cleaning process can be improved. Furthermore, by having a guide block 743 arranged below the front end of the slit nozzle 41, the cleaning liquid LQ is guided downward, and has the approach surface 74 and the guide surface, The cleaning liquid lq can be more effectively discharged from the discharge port 740a.

再者,如圖U所示,本實施形態中之基板處理裝置u 未使用分隔物741。即,藉由洗淨噴嘴75〇期望之高度位 置,分隔物741並非係必須使用之構件亦可卸除。於本實 施形態中之洗淨部%中,藉由分隔物741調整噴出部7二 之高度,藉此亦可調整吸引口 721與狹縫喷嘴^之前端部 側面間之距離。該情形時,較好的是將該距離調整為(M 至5 mm左右。 於本實施形態中之基板處理裝置^,使用有虚第—每 施繼之基板處理褒置…同之導向組塊…、然而,: 98458.doc -33- 200534925 實施形態中,由於並未自排出口 740a實施吸引排出,因此 自排出口 740a主要藉由重力作用排出清洗液乙卩。藉此,作 用於噴口 41a之(-Z)方向之力量(成為吸出抗蝕劑液R之原因 的力量)主要為重力。故而,即使導向組塊743為χ軸方向 厚度杈薄之板狀構件,其亦可以喷口 4】a之周圍大致成為 抗蝕劑液R之停滯點之方式加以調整。 <3.第三實施形態> 由說明可知上述實施形態之喷嘴洗淨機構7〇係藉由噴出 洗淨液並且掃描狹縫噴嘴41之機構(洗淨部74以及驅動機 構%)實施喷嘴洗淨處理,然而實施喷嘴洗淨處理之機構 如若係可將狹縫喷嘴41之喷口 41a之周邊於丫軸方向均勻洗 淨者,則將不僅限於此。 圖15係表示根據如此之原理而構成之第三實施形態中之 喷出部746與位於洗淨位置之狹縫喷嘴4丨之配置關係的 圖。自圖1 5可知悉,本實施形態中之喷出部746的γ軸方向 φ 尺寸大致與狹縫噴嘴41之喷口 41a的Y軸方向寬度相等。再 者,雖然未具體圖示,但與此相同,基座74〇、分隔物Μ工 以及導向組塊743之Y軸方向之尺寸亦根據喷口 41&之丫軸 方向寬度而決定。 即,第三實施形態中之基板處理裝置!之洗淨部?4b具有 與狹縫噴嘴41之喷口 41a之γ軸方向寬度大致相等尺寸,於 此方面係與第一實施形態中之基板處理裝置i之洗淨部Μ $所不同。再者,關於洗淨部74b以外之構成,因與第一 實施形態中之基板處理裝置丨大致相同,故而適當省略說 98458.doc •34- 200534925 圖⑽第三實施形態中之喷出部w之對 視圖。於對向面购配置有氣體喷嘴71〇 :的正 ,氣體喷嘴爾對向面746a中’以橫跨γ轴二= 部寬度之方式,排列於成兔、土一,+ 王 、成為洗净賀嘴75〇之上方 置。又,洗淨喷嘴750中之上方洗淨喷嘴卿二: 7463中,以橫跨γ轴方向之全部寬度之方式,排列於= 下方洗淨噴嘴750a之上方的高度位置。 攻為 就具有如上所述之構成的本實施形態中之噴嘴洗淨處 理’加以間早說明。首先,洗淨液供給機構75開始供給清 洗液LQ,朝向位於洗淨位置之狹縫喷嘴^之前,二 部洗淨喷嘴75〇噴出清洗液LQ。與該動作並行,吸引機才= 72開始吸引。 藉此,洗淨狹縫噴嘴41之前端部。由於本實施形態甲之 洗淨喷嘴750係以大致橫跨狹縫喷嘴4丨之丫軸方向全部寬度 之方式設置,因此關於該前端部之全部區域將大致同時進 行洗淨處理。X,如上述實施形態中所述,無需實施藉由 驅動機構76使洗淨部74b沿著噴口 41 a移動之動作(掃描動 作)。該情形於喷出氮氣體之處理(後述)中亦為同樣。即, 狹縫喷嘴41自洗淨位置移動至待機位置時,第三實施形態 中之驅動機構76僅具有使洗淨部74b退避之功能。 又,與第一實施形態相同,用於喷嘴洗淨處理之清洗液 乙(5係藉由導向組塊743之接近面743&以及導向面74313而得 以向下方引導5並且藉由吸引機構72之吸引力得以迅速吸 98458.doc -35- 200534925 引排出。 即使於本實施形態中之基板處理裝置1中,亦為噴口41 a 藉由導向組塊743而得以覆蓋之狀態,且設為吸引機構72 之及引力並不直接作用於喷口 41 a。即,亦可以喷口 & 1 a周 圍大致成為抗蝕劑液R之停滯點之方式加以調整。 於洗淨喷嘴750開始喷出並經過特定時間後,則洗淨液 t、π枝構75停止供給清洗液Lq,故而來自洗淨喷嘴之 清洗液LQ之噴出亦將停止。 其-人,氣體供給機構71開始供給氮氣體,朝向狹縫喷嘴 41之^端部,全部氣體喷嘴71〇將喷出氛氣體。藉此,促 進附著於狹縫噴嘴41之前端部的清洗液LQ之乾燥。再 者’糸供給來自氣體供給機構71之氮氣體期間,由吸引機 構=起之吸引亦將繼續’因而例如包含清洗液成分 之% ’或藉由氮氣體吹跑的清洗液lq之薄霧等將迅速 得到吸引排出。 、孔版贺嘴71G開始喷出並經過特定時間後,則氣體供 給機構將會停止供給氮氣體,故喷出來自氣體嗔嘴71〇 之氮氣體之處理亦將停止。藉此,本實施形態中之喷嘴洗 淨處理將結束。 =此’於本實施形態中之基板處理裝置丨中,關於狹缝 嘴41之γ軸方向將同時實施噴嘴洗淨處理之各步驟。故 而,可提高喷嘴洗淨處理中之¥軸 早力问之均一性,從而使 冼平後之狹縫噴嘴41之狀態均一化於丫軸方向。 如上所述,即使於第三實施形態中之基板處理裝置卜 98458.doc -36- 200534925 亦與罘-實施形態相@,可以狹縫噴嘴41之喷口 41a大致 成為杬蝕劑液R之停滯點之方式,調整吸引機構U之吸引 力,因而可獲得與上述實施形態相同之效杲。 又,洗淨部74b(噴出部746)具有與狹縫喷嘴“之喷口 4U 之γ軸方向寬度大致相同尺寸,於噴出部746中以橫跨噴口 41a之全部寬度之方式配置有氣體噴嘴71〇以及洗淨喷嘴 750,藉此可於橫跨狹縫噴嘴41之全部寬度同時喷出清洗 • 液LQ。因此可縮短噴嘴洗淨處理所需之時間。 <4·變形例> 以上,雖就本發明之實施形態加以說明,但本發明並非 限定於上述實施形態,亦可實施各種變更。 例如,如第二實施形態中之基板處理裝置丨般,可採用 自狹缝喷嘴41之噴口 41a側方吸引清洗液[(^的構造,並且 如第三實施形態中之基板處理裝置!般,亦可採用同時洗 淨喷口 41a之Y軸方向之大致全部寬度的構造。於該情形 φ 時,於噴出部746之對向面746a中,亦可於下方洗淨喷嘴 750a之進而下方位置設置連通連接於吸引機構72的吸引 口。又,該情形時,較好的是將該吸引口設為沿著Y轴方 向延伸之隙縫狀。 又,於第一實施形態中之喷出部742中,於對向面Μ。 之Y軸方向兩側設置有下方洗淨噴嘴75〇a,而於對向面 7 4 2 a之Y軸方向中央部則設置有上方洗淨喷嘴7 ⑽,彳曰、先 淨喷嘴750之配置並非限定於如此之配置。圖17係變來例 中之噴出部742之對向面742&的正視圖。如此 ^ ’亦可於 98458.doc -37- 200534925 對向面742a之Y軸方向兩側設置上方洗淨噴嘴75的.,而於 對向面742a之Y軸方向中央部設置下方洗淨噴嘴75〇a。 又,亦可使下方洗淨噴嘴75(^之丫軸方向位置,盥上方 洗淨噴嘴雇之Y轴方向位置一致。即,亦可於喷出部 742、745、746中,於下方洗淨噴嘴乃⑹之正上方配置上 方洗淨噴嘴750b。 又,氣體喷嘴710以及洗淨噴嘴75〇之開口部形狀並非限 定於圓形’亦可具有延伸於γ軸方向之隙縫狀之形狀。 【圖式簡單說明】 圖1係表示本發明之基板處理裝置的立體圖。 圖2係表示基板處理裝置中之塗佈處理之相關主要構成 的側視圖。 圖3係表示第一實施形態中之喷嘴洗淨機構之構成的 圖。 圖4係第-實施形態中之喷出部之對向面的正視圖。 圖5係表示導向組塊的立體圖。 圖6係-併表示狹缝喷嘴與噴出部移動之情況的圖。 圖7係表示開始喷嘴洗淨處理時之各構成配置的圖。 圖8係表示㈣洗淨處理中清洗液處於噴出狀態 的圖。 月〜 圖9係表示噴嘴洗淨處理中氮氣體處於噴出狀態之情形 的圖。 圖10係擴大表示圖8之狀態的圖。 圖11係表示第二實施形態中之噴嘴洗淨機構之構成的 98458.doc -38 - 200534925 圖12係第二實施形態中之喷出部之對向面的正視圖。 圖13係表示第二實施形態中清洗液處於喷出狀態 的圖。 t 圖14係說明第二實施形態中之吸引機構之作用的圖。 圖15係表不第二貫施形態中之噴出部與位於洗淨位置之 狹縫喷嘴之位置關係的圖。 φ 圖Μ係第三實施形態中之噴出部之對向面的正視圖。 圖17係變形例中之噴出部之對向面的正視圖。 圖18係表示狹縫噴嘴之前端部之初始狀態的圖。 圖19係表示對數十牧左右之基板實施塗佈處理之狀態的 圖。 圖2 0係表示對數百牧左右之基板實施塗佈處理之狀態的 圖。 圖2 1係表示於先前之基板處理裝置之喷出喷嘴中,於抗 • 蝕劑液被吸出之部分中混入有空氣之狀態的圖。 圖22係表示於先前之基板處理裝置之喷出喷嘴中,於抗 蝕剤液被吸出之部分中混入有洗淨液(清洗液)之狀態的 圖。 圖2 3係表示於先前之基板處理裝置中,喷嘴洗淨處理後 所觀察到之條紋狀附著物的圖。 【主要元件符號說明】 1 基板處理裝置 2 本體 98458.doc 39- 200534925Moreover, as shown in FIG. U, the substrate processing apparatus u in this embodiment does not use the spacer 741. That is, the partition 741 is not necessarily a component which can be removed by cleaning the desired height position of the nozzle 75, and can be removed. In the cleaning section% in this embodiment, the height of the ejection section 72 is adjusted by the partition 741, so that the distance between the suction port 721 and the side surface of the front end of the slit nozzle ^ can also be adjusted. In this case, it is better to adjust the distance to about (M to 5 mm.) In the substrate processing apparatus ^ in this embodiment, a virtual substrate is used—the substrate processing unit for each successive step ... the same guide block ..., However ,: 98458.doc -33- 200534925 In the embodiment, since suction discharge is not performed from the discharge port 740a, the cleaning liquid acetylene is mainly discharged from the discharge port 740a by gravity. This acts on the nozzle 41a ( The force in the -Z) direction (the force that causes the resist solution R to be sucked out) is mainly gravity. Therefore, even if the guide block 743 is a plate-shaped member having a thin thickness in the x-axis direction, it can also eject the nozzle 4] a The surroundings are adjusted so as to become the stagnation point of the resist liquid R. < 3. Third Embodiment > From the description, it can be seen that the nozzle cleaning mechanism 70 of the above embodiment ejects the cleaning liquid and scans the slits. The mechanism of the nozzle 41 (the cleaning unit 74 and the driving mechanism%) performs the nozzle cleaning process. However, if the mechanism that performs the nozzle cleaning process can uniformly clean the periphery of the nozzle 41a of the slit nozzle 41 in the direction of the y-axis, then 15 is a diagram showing the arrangement relationship between the ejection portion 746 and the slit nozzle 4 in the cleaning position in the third embodiment constructed based on such a principle. As can be understood from FIG. 15, this In the embodiment, the size of the γ-axis direction φ of the discharge portion 746 is approximately equal to the width of the Y-axis direction of the nozzle 41a of the slit nozzle 41. In addition, although not shown in detail, the base 74 and the partition are the same. The size of the Y-axis direction of the physical tool and the guide block 743 is also determined by the width of the nozzle 41 & Y-axis direction. That is, the substrate processing apparatus in the third embodiment! The cleaning section? 4b has a slit nozzle. The width of the nozzle 41a in the γ-axis direction is approximately equal to the size, which is different from the cleaning section M $ of the substrate processing apparatus i in the first embodiment. Furthermore, regarding the structure other than the cleaning section 74b, It is almost the same as the substrate processing apparatus in the first embodiment, so 98458.doc • 34- 200534925 is omitted as appropriate. Fig. 对 The opposite view of the ejection part w in the third embodiment. A gas nozzle is purchased on the opposite side. 71〇: Positive, In the gas nozzle facing surface 746a, 'across the γ axis 2 = part width, it is arranged above the rabbit, soil one, + king, and 75% of the cleaning nozzle. Also, in the cleaning nozzle 750, The upper washing nozzle No. 2: 7463 is arranged at a height position above the lower washing nozzle 750a so as to span the entire width in the γ-axis direction. This embodiment has the structure described above. The nozzle cleaning process will be described in a short time. First, the cleaning liquid supply mechanism 75 starts to supply the cleaning liquid LQ, and the two cleaning nozzles 75 spray the cleaning liquid LQ before the slit nozzles ^ located at the cleaning position. In parallel with this action, the suction machine = 72 starts to attract. Thereby, the front end part of the slit nozzle 41 is cleaned. Since the cleaning nozzle 750 of the first embodiment is provided so as to extend across the entire width of the slit nozzle 4 in the y-axis direction, the entire area of the front end portion is cleaned at the same time. X, as described in the above embodiment, it is not necessary to perform the operation (scanning operation) of moving the cleaning portion 74b along the nozzle 41a by the driving mechanism 76. This is the same in the treatment (described later) of the nitrogen gas. That is, when the slit nozzle 41 is moved from the cleaning position to the standby position, the driving mechanism 76 in the third embodiment has only a function of retreating the cleaning portion 74b. Also, similar to the first embodiment, the cleaning liquid B (5 series for nozzle cleaning treatment) is guided downward by the approach surface 743 & and the guide surface 74313 of the guide block 743, and the suction mechanism 72 The attraction force can be quickly sucked and discharged by 98458.doc -35- 200534925. Even in the substrate processing apparatus 1 in this embodiment, the nozzle 41 a is covered by the guide block 743 and is set as a suction mechanism. The gravitational force of 72 and the gravity does not directly act on the nozzle 41 a. That is, the nozzle & 1 a may also be adjusted in such a manner that the stagnation point of the resist liquid R becomes approximately. The cleaning nozzle 750 starts to eject and elapses a specific time. After that, the supply of the cleaning liquid Lq by the cleaning liquid t and the π branch structure 75 is stopped, and therefore, the discharge of the cleaning liquid LQ from the cleaning nozzle will also be stopped. The gas supply mechanism 71 starts supplying nitrogen gas toward the slit nozzle. At the end of 41, all the gas nozzles 71 will emit the atmosphere gas. This promotes the drying of the cleaning liquid LQ attached to the front end of the slit nozzle 41. Furthermore, the nitrogen gas is supplied from the gas supply mechanism 71. period, The suction from the suction mechanism = will also continue 'so that, for example, it contains% of the cleaning liquid component' or the mist of the cleaning liquid lq blown off by nitrogen gas will be quickly sucked and discharged. 71G of the orifice nozzle starts to spray and After a certain period of time, the gas supply mechanism will stop supplying nitrogen gas, so the process of ejecting the nitrogen gas from the gas nozzle 71 will also stop. As a result, the nozzle cleaning process in this embodiment will end. Therefore, in the substrate processing apparatus of this embodiment, the steps of the nozzle cleaning process are performed simultaneously on the γ-axis direction of the slit nozzle 41. Therefore, it is possible to increase the ¥ axis early force in the nozzle cleaning process. Uniformity, so that the state of the slit nozzle 41 after the flattening is uniformized in the Y-axis direction. As described above, even in the third embodiment, the substrate processing apparatus [98458.doc -36- 200534925] is also implemented with 罘- The morphology phase @ can adjust the attractive force of the suction mechanism U in such a manner that the nozzle 41a of the slit nozzle 41 becomes approximately the stagnation point of the etchant liquid R, so that the same effect as the above embodiment can be obtained. The clean section 74b (ejection section 746) has approximately the same size as the width in the γ-axis direction of the nozzle 4U of the slit nozzle ", and the gas section 71 and the cleaning are arranged in the ejection section 746 so as to span the entire width of the nozzle 41a. The nozzle 750 can simultaneously spray the cleaning liquid LQ across the entire width of the slit nozzle 41. Therefore, the time required for the nozzle cleaning process can be shortened. ≪ 4. Modifications > The embodiment is described, but the present invention is not limited to the above-mentioned embodiment, and various modifications can be made. For example, like the substrate processing apparatus in the second embodiment, the suction from the side of the nozzle 41a of the slit nozzle 41 can be adopted The structure of the cleaning liquid [(^) and the substrate processing apparatus as in the third embodiment! In general, a structure in which substantially the entire width in the Y-axis direction of the nozzle 41a is simultaneously cleaned may be employed. In this case φ, a suction port connected to the suction mechanism 72 may be provided on the facing surface 746a of the discharge portion 746, and further below the cleaning nozzle 750a. In this case, it is preferable that the suction port has a slit shape extending in the Y-axis direction. Further, in the ejection portion 742 in the first embodiment, it is on the facing surface M. The lower cleaning nozzle 75〇a is provided on both sides in the Y-axis direction, and the upper cleaning nozzle 7⑽ is disposed on the central portion in the Y-axis direction of the facing surface 7 4 2a. It is not limited to such a configuration. Fig. 17 is a front view of the facing surface 742 & of the ejection portion 742 in the modified example. In this way, '98458.doc -37- 200534925 can also be provided with the upper cleaning nozzle 75 on both sides in the Y-axis direction of the opposing surface 742a, and the lower cleaning nozzle 75 can be provided in the central portion in the Y-axis direction of the opposing surface 742a. 〇a. In addition, the position of the lower washing nozzle 75 (^ in the y-axis direction and the position of the upper washing nozzle in the y-axis direction can be made the same. That is, it can be washed in the ejection sections 742, 745, and 746. The upper nozzle 750b is disposed directly above the nozzle. The shape of the openings of the gas nozzle 710 and the cleaning nozzle 75 is not limited to a circle, and may have a slit-like shape extending in the γ-axis direction. [Figure Brief description of the formula] Fig. 1 is a perspective view showing a substrate processing apparatus of the present invention. Fig. 2 is a side view showing a main configuration related to coating processing in the substrate processing apparatus. Fig. 3 is a view showing nozzle cleaning in the first embodiment. A diagram of the structure of the mechanism. Fig. 4 is a front view of the facing surface of the ejection section in the first embodiment. Fig. 5 is a perspective view of the guide block. Fig. 6 is a view illustrating the movement of the slit nozzle and the ejection section. A diagram of the situation. Fig. 7 is a diagram showing the configuration and configuration of each nozzle when the nozzle cleaning process is started. Fig. 8 is a diagram showing a state in which the cleaning liquid is discharged during the cleaning process. Months ~ Fig. 9 is a diagram showing nitrogen during the nozzle cleaning process. Gas is ejected FIG. 10 is an enlarged view showing the state of FIG. 8. FIG. 11 is a 98458.doc -38-200534925 showing the configuration of the nozzle cleaning mechanism in the second embodiment. FIG. 12 is a view of the second embodiment. A front view of the opposite side of the ejection portion. Fig. 13 is a view showing a state in which the cleaning liquid is ejected in the second embodiment. T Fig. 14 is a view explaining the function of the suction mechanism in the second embodiment. Fig. 15 The figure shows the positional relationship between the ejection part in the second embodiment and the slit nozzle located at the cleaning position. Φ Figure M is a front view of the opposite surface of the ejection part in the third embodiment. Fig. 17 is a deformation A front view of the facing surface of the ejection portion in the example. Fig. 18 is a diagram showing an initial state of the front end of the slit nozzle. Fig. 19 is a diagram showing a state in which a coating process is performed on a substrate having a thickness of several dozens. 2 0 is a view showing a state where a coating treatment is performed on a substrate of several hundreds of thicknesses. FIG. 2 1 shows a spray nozzle of a conventional substrate processing apparatus, and a part in which an anti-etching solution is sucked is mixed. Figure 22 shows the state of air. FIG. 2 is a view showing a state in which a cleaning solution (a cleaning solution) is mixed in a portion of the ejection nozzle of the substrate processing apparatus. Picture of the stripe-like attachments observed afterwards. [Description of main component symbols] 1 Substrate processing device 2 Main body 98458.doc 39- 200534925

3 平臺 5 移動機構 6 抗蝕劑供給機構 7 喷嘴初始化機構 8 控制部 30 保持面 41 狹縫喷嘴 41a 噴口 435 44 升降機構 70 噴嘴洗淨機構 71 氣體供給機構 72 吸引機構 74, 74a,74b 洗淨部 75 洗淨液供給機構 76 驅動機構(掃描機構) 77 待機盒 90 基板 710 氣體喷嘴 710a 下方氣體噴嘴 710b 上方氣體喷嘴 720? 721 吸引口 740a 排出口 741 分隔物 742, 745, 746 噴出部 98458.doc -40- 200534925 742a,745a,745b,746a 對向面 743 導向組塊(遮斷構件,引導構件) 743a 接近面 743b 導向面3 Platform 5 Moving mechanism 6 Resist supply mechanism 7 Nozzle initialization mechanism 8 Control unit 30 Holding surface 41 Slot nozzle 41a Nozzle 435 44 Lifting mechanism 70 Nozzle cleaning mechanism 71 Gas supply mechanism 72 Suction mechanism 74, 74a, 74b Cleaning Section 75 Washing liquid supply mechanism 76 Drive mechanism (scanning mechanism) 77 Standby box 90 Substrate 710 Gas nozzle 710a Bottom gas nozzle 710b Top gas nozzle 720? 721 Suction port 740a Discharge port 741 Separator 742, 745, 746 Ejection section 98458. doc -40- 200534925 742a, 745a, 745b, 746a facing surface 743 guide block (blocking member, guide member) 743a approach surface 743b guide surface

750 750a 750b LQ R750 750a 750b LQ R

洗淨噴嘴 下方洗淨喷嘴 上方洗淨喷嘴 清洗液 抗餘劑液Washing nozzle Bottom washing nozzle Bottom washing nozzle Washing liquid Anti-residue liquid

98458.doc • 41 -98458.doc • 41-

Claims (1)

200534925 十、申請專利範圍: 1· -種噴嘴洗淨裝置’其特徵在於:其係洗淨自設置於前 端部之喷口嘴出特定處理液之喷出喷嘴者m =向:述噴出噴嘴之前端部附近,自噴口供給特定洗 淨液之洗淨液供給機構;及 土:引口吸引藉由上述洗淨液供給機構所供給之上述 特疋洗淨液之吸引機構; •辻二广及引機構之吸引力’使上述噴口附近成為上 4特疋處理液之大略停滯點。 2·如請求項1之噴嘴洗淨裝置,其中進而具備. 其具有上述喷出喷嘴之嘴口之短邊方向寬 近; ^,且配置於上述喷出噴嘴之喷口下方附 二吸51機構之吸引口自上述遮斷構件之下方進行吸 之吸Z調整上述噴出噴嘴之噴口附近的上述吸引機構 3· 2求们之喷嘴嶋置,其中上述遮蔽構件具有導 lit特^導向面係將藉由上述洗淨液供給機構所供給之 上述特疋洗淨液導向下方者。 4·如請求項1之噴喈、、杏、、容驻恶 ^ 喷出噴喈、^洗以置,其中上述吸引機構自上述 嘴之嘴端部側方進行吸引,藉此調整上述噴出喷 ^ 付近的上述吸引機構之吸引力。 口|;:二喷嘴洗淨裝置,其中上述吸機構之吸引 e液供給機構之喷口更接近配置於上述喷出 98458.doc 200534925 喷嘴。 6·如請求項4之喷噔、、杰、、麻姑淫 ^ 嘴之前…”洗斤裝置1中自設置於上述噴出噴 而部下方的排出口 所供給之上述特定洗淨液。 过洗繼給機構 7. 如請求項6之噴嘴洗淨裝置, 喷出嘖喈夕Α山 八1胥配置於上述 導向面係將=部下方且具有導向面之引導構件,上述 洗淨液導述洗淨液供給機構所供給之上述特定 8. 如請求们之噴嘴洗淨裝置,其中進而 淨液供給機構°°上述洗 …求項s”:=洗::之位置之調整機構。 特定厚度之分隔物。述調整機構係具有 1。·如請求们之噴嘴洗淨裝置,其 係延伸於特定方向之隙縫; 出”之贺口 且進而具備使上述洗淨液供給機 移動的掃描機構。 t上这特疋方向 11 ·如凊求項1之嘖 y ^冼淨衣置,其中上述噴出喷嘴之喑σ 係延伸於特定方向之隙缝; ”之賀口 上供給機構係遍及上述喷出喷嘴之前端部之 12 全寬’大致同時供給上述特定洗淨液。 12·:=之喷嘴洗淨裝置,其中進而具備將特㈣ —、、亡述噴出噴嘴之前端部的氣體供給機構; ,上述氣體供給機構供給上述特定氣體之位置較 淨液供給機構供給上述特定洗淨液之位置更上方。 9845S.doc 200534925 種贺爲洗宁衣置,其特徵在於·· 端部之喷口喷屮姓a 士 凡序·目叹置於月丨J 貰出特疋處理液之喷出喷嘴者,且具備: 朝向上述噴出哈峻 乂 …… 鳥之則端部附近,供給特定洗淨液之 洗〉尹液供給機構;及 、 及引錯由上述洗淨液供給機構所供給之上 液的吸引機構; 义付疋,无平 上述洗淨液供給機構具備: 複數個朝向上述喷出b 液之洗淨噴嘴; “贺出上述特定洗淨 將上述複數個洗淨嗔b / 特定洗淨液之位置 ^ @洗片喷嘴供給上述 淨液之位置,d於其他洗淨喷嘴供給上述特定洗 同度方向不同之方式配置。 1 4· 一種基板處理裝詈, 定處理液者,且具備^在於:其係於基板上塗佈特 保持基板之保持機構; 自設置於前端部之喷口 、 T出特疋處理液至被上诚保姓 機構保持之基板表面的喷出噴嘴;A被上这保持 洗淨t述噴出噴嘴之噴嘴洗淨裝置; 上述噴嘴洗淨裝置具備·· 朝向上述噴出噴喈 ϋ/ν 、 則柒部附近,供給特定洗淨液之 洗淨液供給機構;及 r狀又 及引稭由上述洗淨液供 液的吸引機構; 铖構所么…之上述特疋洗淨 调整上述吸引機構之 W力,使上述贺口附近成為上 98458.doc 200534925 述特定處理液的大略停滞點。 15 一種基板處理裝置,甘^ 其特徵在於··其係於基板上塗佈牲 定處理液者,且具備· 寻 保持基板之保持機構· 自&置於心部之噴π嘴出特定處理液至被上述保 機構保持之基板表面的喷出噴嘴;及 、、 洗/尹上述噴出噴嘴之噴嘴洗淨裝置; 上述噴嘴洗淨裝置具備: 朝向上述噴出噴嘴之前端部附近,供給特定洗淨 洗淨液供給機構; 吸引藉由上述洗淨液供給機構所供給之上述特定 液的吸引機構; / ’ 上述洗淨液供給機構具備: 複數個朝向上述喷出喷嘴之前端部心上 液之洗淨喷嘴; / ^上:複數個洗淨喷嘴中至少一個洗淨噴嘴供給上述 特疋洗斤液之位置以與其他洗淨噴嘴供給上述特定洗淨 /夜之位置在咼度方向不同之方式配置。 9S45S.doc200534925 10. Scope of patent application: 1. A nozzle cleaning device 'characterized in that: it cleans the spray nozzle that emits a specific treatment liquid from a nozzle provided at the front end m = to: the front end of the spray nozzle Near the department, a cleaning liquid supply mechanism that supplies a specific cleaning liquid from the spray port; and a soil: a suction mechanism that attracts the above-mentioned special cleaning liquid supplied by the above-mentioned cleaning liquid supply mechanism; The attraction of the mechanism 'makes the vicinity of the above-mentioned nozzle become a stagnation point of the upper 4 special treatment liquid. 2. The nozzle cleaning device according to claim 1, further comprising: a nozzle having a width in the short side direction of the nozzle of the above-mentioned ejection nozzle; and ^, and arranged below the nozzle of the above-mentioned ejection nozzle with a two-suction 51 mechanism The suction port sucks and sucks from below the above-mentioned blocking member, and adjusts the nozzle setting of the above-mentioned suction mechanism 3.2 near the nozzle of the discharge nozzle. The above-mentioned shielding member has a guide feature and a guide surface. The special cleaning liquid supplied by the cleaning liquid supply mechanism is guided to the lower one. 4. The spray nozzle, apricots, and accommodating evils according to claim 1 ^ spray spray nozzle, wash washing device, wherein the suction mechanism sucks from the side of the mouth end of the mouth, thereby adjusting the spray nozzle ^ Pay close attention to the attraction of the above-mentioned attraction agencies. Mouth | ;: two nozzle cleaning device, in which the suction of the suction mechanism of the e-liquid supply mechanism is closer to the nozzle of the above-mentioned discharge 98458.doc 200534925. 6. · As described in claim 4, before spraying, spraying, spraying, etc. before the mouth ... "The above-mentioned specific cleaning liquid supplied from the discharge port provided below the spray spraying section in the washing device 1. Overwash Follow-up mechanism 7. If the nozzle cleaning device of claim 6, the spraying 啧 喈 夕 Α 山 八 1 胥 is arranged on the above guide surface and is a guide member with a guide surface below the guide part. The above-mentioned specificity supplied by the clean liquid supply mechanism 8. If the nozzle cleaning device of the request is made, in which the clean liquid supply mechanism °° the above-mentioned washing ... requirement term s ": = washing :: position adjustment mechanism. Partitions of a specific thickness. Said adjustment mechanism has 1. · If the nozzle cleaning device is requested, it is a slit that extends in a specific direction; the nozzle is provided with a scanning mechanism for moving the cleaning liquid supply machine. TThe special direction 11 on the above. The item 啧 y ^ 冼 of item 1 is a clean clothes set, in which the 上述 σ of the above-mentioned ejection nozzle is a slit extending in a specific direction; and the supply mechanism on the convection mouth is provided at the same time as the full width of the front end of the above-mentioned ejection nozzle at about 12 '. Specific cleaning solution. 12 ·: = Nozzle cleaning device, further comprising a gas supply mechanism that supplies the front end of the nozzle to the nozzle; and the position where the gas supply mechanism supplies the specific gas is higher than that provided by the clean liquid supply mechanism. The position of the cleaning solution is higher. 9845S.doc 200534925 The Hewei Suning clothes set is characterized by ... the end of the nozzle is sprayed with the surname a Shifanxuan and sighed on the moon 丨 J The person who sprays out the special treatment liquid spray nozzle, and has : Towards the above-mentioned spraying ha 乂 乂 ... near the end of the bird, supply specific cleaning liquid> Yin liquid supply mechanism; and, and the suction mechanism that misleads the liquid supplied by the above cleaning liquid supply mechanism; Yi Fu, Wu Ping, the above-mentioned cleaning liquid supply mechanism is provided with: a plurality of cleaning nozzles spraying the b liquid toward the above; "congratulations on the position of the above-mentioned specific cleaning to the above-mentioned plurality of cleaning liquid b / specific cleaning liquid ^ The position where the washing liquid is supplied by the washing nozzle, and d is arranged in a way that the other washing nozzles supply the specific washing in the same direction with different directions. 1 4 · A substrate processing device, which is used to determine the processing liquid, and is provided with: The substrate is held on the substrate by a holding mechanism for holding the substrate; from the nozzle provided at the front end, the special treatment liquid is ejected to the ejection nozzle on the surface of the substrate held by the Shangchengbaoxing mechanism; Spray nozzle A nozzle cleaning device; the nozzle cleaning device is provided with a cleaning liquid supply mechanism for supplying a specific cleaning liquid toward the vicinity of the crotch toward the ejection nozzle 喈 ϋ / ν, and an r-shaped and drained straw is washed by the above The suction mechanism for the liquid supply; the above-mentioned special cleaning means adjusts the W force of the suction mechanism, so that the vicinity of the mouth is the approximate stagnation point of the specific processing liquid described in 98458.doc 200534925. 15 A substrate The processing device is characterized by: · It is a person who applies a processing solution on the substrate and has a holding mechanism for holding the substrate · The specific processing solution is discharged from the nozzle of the & A nozzle cleaning device for cleaning the substrate surface held by the protection mechanism; and, a nozzle cleaning device for washing / injecting the nozzle; the nozzle cleaning device includes: supplying a specific cleaning cleaning solution toward a vicinity of an end portion before the nozzle; Supply mechanism; suction mechanism that sucks the specific liquid supplied by the cleaning liquid supply mechanism; / 'the cleaning liquid supply mechanism includes: The cleaning nozzle of the upper heart liquid before spraying the nozzle; / ^ top: the position where at least one of the plurality of cleaning nozzles supplies the above-mentioned special cleaning liquid to supply the above-mentioned specific cleaning with other cleaning nozzles / The position of the night is configured in a way that the direction of the degree is different. 9S45S.doc
TW094101573A 2004-03-19 2005-01-19 Nozzle cleaning apparatus and substrate processing apparatus TWI293578B (en)

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