TW200531317A - Light emitting element and manufacturing method thereof - Google Patents
Light emitting element and manufacturing method thereof Download PDFInfo
- Publication number
- TW200531317A TW200531317A TW94102968A TW94102968A TW200531317A TW 200531317 A TW200531317 A TW 200531317A TW 94102968 A TW94102968 A TW 94102968A TW 94102968 A TW94102968 A TW 94102968A TW 200531317 A TW200531317 A TW 200531317A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- light
- substrate
- conductive
- emitting element
- Prior art date
Links
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- Led Devices (AREA)
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004068040A JP4505794B2 (ja) | 2004-03-10 | 2004-03-10 | 発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200531317A true TW200531317A (en) | 2005-09-16 |
| TWI367570B TWI367570B (cs) | 2012-07-01 |
Family
ID=35038811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94102968A TW200531317A (en) | 2004-03-10 | 2005-02-01 | Light emitting element and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4505794B2 (cs) |
| CN (1) | CN100421270C (cs) |
| TW (1) | TW200531317A (cs) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5032017B2 (ja) * | 2005-10-28 | 2012-09-26 | 株式会社東芝 | 半導体発光素子及びその製造方法並びに半導体発光装置 |
| CN100388519C (zh) * | 2005-11-17 | 2008-05-14 | 晶能光电（江西）有限公司 | 在硅衬底上制备高质量发光半导体薄膜的方法 |
| JP2008091789A (ja) * | 2006-10-04 | 2008-04-17 | Hitachi Cable Ltd | 発光ダイオード |
| KR101499951B1 (ko) * | 2008-01-02 | 2015-03-06 | 엘지이노텍 주식회사 | 적색 발광 소자 및 그 제조방법 |
| DE112009004628A5 (de) * | 2009-04-03 | 2012-05-24 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements, optoelektronisches Bauelement und Bauelementanordnung mit mehreren optoelektronischen Bauelementen |
| JP5407707B2 (ja) * | 2009-09-29 | 2014-02-05 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
| US8669125B2 (en) | 2010-06-18 | 2014-03-11 | Glo Ab | Nanowire LED structure and method for manufacturing the same |
| JP2011142353A (ja) * | 2011-04-19 | 2011-07-21 | Toshiba Corp | 半導体発光素子及びその製造方法並びに半導体発光装置 |
| JP6255747B2 (ja) * | 2013-07-01 | 2018-01-10 | 日亜化学工業株式会社 | 発光装置 |
| CN103500777B (zh) * | 2013-08-30 | 2016-01-20 | 华灿光电股份有限公司 | Si衬底GaN基发光二极管外延片及其制作方法 |
| CN103794712A (zh) * | 2014-02-13 | 2014-05-14 | 马鞍山太时芯光科技有限公司 | 一种提高发光器件芯片散热效率的方法 |
| CN103779460A (zh) * | 2014-02-13 | 2014-05-07 | 马鞍山太时芯光科技有限公司 | 一种发光器件芯片及其制造方法 |
| CN103811616A (zh) * | 2014-02-13 | 2014-05-21 | 北京太时芯光科技有限公司 | 一种无砷化制造发光器件芯片的方法 |
| CN103811604A (zh) * | 2014-02-13 | 2014-05-21 | 北京太时芯光科技有限公司 | 一种发光器件芯片及其制造方法 |
| CN103811599A (zh) * | 2014-02-13 | 2014-05-21 | 北京太时芯光科技有限公司 | 一种提高发光器件芯片出光效率的方法 |
| CN103872196A (zh) * | 2014-02-13 | 2014-06-18 | 马鞍山太时芯光科技有限公司 | 一种衬底及其回收再利用的方法 |
| CN106252481B (zh) * | 2016-08-29 | 2018-12-07 | 河北工业大学 | 一种实现蓝宝石衬底重复利用的垂直led芯片制备方法 |
| JP6608352B2 (ja) * | 2016-12-20 | 2019-11-20 | Ｄｏｗａエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
| CN107958945B (zh) * | 2017-11-20 | 2020-07-03 | 扬州乾照光电有限公司 | 一种无介质膜的倒装发光二极管芯片及其制作方法 |
| CN109873062B (zh) * | 2019-01-29 | 2020-06-16 | 南昌大学 | 一种带有复合反射镜的AlGaInP红色发光二极管器件结构 |
| CN112652689B (zh) * | 2020-12-30 | 2022-09-02 | 深圳第三代半导体研究院 | 一种发光二极管及其制造方法 |
| CN113130715B (zh) * | 2021-04-15 | 2022-09-02 | 中国科学院上海微系统与信息技术研究所 | 垂直结构硅基量子点发光器件的衬底转移方法 |
| CN118173677A (zh) * | 2024-05-14 | 2024-06-11 | 聚灿光电科技（宿迁）有限公司 | 红光垂直结构发光二极管的芯片结构及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56152281A (en) * | 1980-04-26 | 1981-11-25 | Toshiba Corp | Light emitting diode |
| JP2658446B2 (ja) * | 1989-12-04 | 1997-09-30 | 日立電線株式会社 | 発光ダイオードの製造方法 |
| JP3259811B2 (ja) * | 1995-06-15 | 2002-02-25 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
| JP2001007399A (ja) * | 1999-06-23 | 2001-01-12 | Toshiba Corp | 半導体発光素子 |
| JP4050444B2 (ja) * | 2000-05-30 | 2008-02-20 | 信越半導体株式会社 | 発光素子及びその製造方法 |
| JP2003258316A (ja) * | 2002-02-21 | 2003-09-12 | Korai Kagi Kofun Yugenkoshi | 発光輝度を高めた発光ダイオードとその製造方法 |
| TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
| JP4061499B2 (ja) * | 2002-05-17 | 2008-03-19 | 信越半導体株式会社 | 発光素子の製造方法 |
| US6649437B1 (en) * | 2002-08-20 | 2003-11-18 | United Epitaxy Company, Ltd. | Method of manufacturing high-power light emitting diodes |
-
2004
- 2004-03-10 JP JP2004068040A patent/JP4505794B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-01 TW TW94102968A patent/TW200531317A/zh not_active IP Right Cessation
- 2005-03-09 CN CNB2005100536128A patent/CN100421270C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI367570B (cs) | 2012-07-01 |
| CN100421270C (zh) | 2008-09-24 |
| CN1667849A (zh) | 2005-09-14 |
| JP2005259910A (ja) | 2005-09-22 |
| JP4505794B2 (ja) | 2010-07-21 |
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