TW200527256A - Plasma processing method and apparatus thereof - Google Patents
Plasma processing method and apparatus thereof Download PDFInfo
- Publication number
- TW200527256A TW200527256A TW094100506A TW94100506A TW200527256A TW 200527256 A TW200527256 A TW 200527256A TW 094100506 A TW094100506 A TW 094100506A TW 94100506 A TW94100506 A TW 94100506A TW 200527256 A TW200527256 A TW 200527256A
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- model
- measurement data
- plasma processing
- operating conditions
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 312
- 238000000491 multivariate analysis Methods 0.000 claims abstract description 36
- 238000005259 measurement Methods 0.000 claims description 138
- 238000000034 method Methods 0.000 claims description 63
- 238000009832 plasma treatment Methods 0.000 claims description 32
- 230000008859 change Effects 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 28
- 230000005856 abnormality Effects 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 7
- 238000012544 monitoring process Methods 0.000 claims description 7
- 238000012847 principal component analysis method Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010202 multivariate logistic regression analysis Methods 0.000 claims 2
- 238000004458 analytical method Methods 0.000 abstract description 35
- 238000013500 data storage Methods 0.000 abstract description 14
- 238000003860 storage Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 59
- 235000012431 wafers Nutrition 0.000 description 53
- 239000011159 matrix material Substances 0.000 description 29
- 238000012360 testing method Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 15
- 238000001514 detection method Methods 0.000 description 11
- 238000012821 model calculation Methods 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 8
- 230000014509 gene expression Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052778 Plutonium Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000513 principal component analysis Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
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- 229920000642 polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000009717 reactive processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/32—Operator till task planning
- G05B2219/32201—Build statistical model of past normal proces, compare with actual process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004002883A JP4448335B2 (ja) | 2004-01-08 | 2004-01-08 | プラズマ処理方法及びプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200527256A true TW200527256A (en) | 2005-08-16 |
| TWI356322B TWI356322B (enExample) | 2012-01-11 |
Family
ID=34737130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094100506A TW200527256A (en) | 2004-01-08 | 2005-01-07 | Plasma processing method and apparatus thereof |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7289866B2 (enExample) |
| JP (1) | JP4448335B2 (enExample) |
| KR (1) | KR100612736B1 (enExample) |
| CN (1) | CN100401481C (enExample) |
| TW (1) | TW200527256A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684843B (zh) * | 2018-01-30 | 2020-02-11 | 日商日立全球先端科技股份有限公司 | 電漿處理裝置及狀態預測裝置 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7596421B2 (en) * | 2005-06-21 | 2009-09-29 | Kabushik Kaisha Toshiba | Process control system, process control method, and method of manufacturing electronic apparatus |
| US7833381B2 (en) * | 2005-08-18 | 2010-11-16 | David Johnson | Optical emission interferometry for PECVD using a gas injection hole |
| JP4874678B2 (ja) | 2006-03-07 | 2012-02-15 | 株式会社東芝 | 半導体製造装置の制御方法、および半導体製造装置の制御システム |
| JP4640828B2 (ja) * | 2006-03-17 | 2011-03-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP5107597B2 (ja) * | 2006-03-29 | 2012-12-26 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US8070972B2 (en) * | 2006-03-30 | 2011-12-06 | Tokyo Electron Limited | Etching method and etching apparatus |
| JP4914119B2 (ja) * | 2006-05-31 | 2012-04-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| US7286948B1 (en) * | 2006-06-16 | 2007-10-23 | Applied Materials, Inc. | Method for determining plasma characteristics |
| US7676790B1 (en) | 2006-08-04 | 2010-03-09 | Lam Research Corporation | Plasma processing system component analysis software and methods and systems for creating the same |
| JP5105399B2 (ja) * | 2006-08-08 | 2012-12-26 | 東京エレクトロン株式会社 | データ収集方法，基板処理装置，基板処理システム |
| US7937178B2 (en) * | 2006-08-28 | 2011-05-03 | Tokyo Electron Limited | Charging method for semiconductor device manufacturing apparatus, storage medium storing program for implementing the charging method, and semiconductor device manufacturing apparatus implementing the charging method |
| JP5312765B2 (ja) * | 2007-01-26 | 2013-10-09 | 株式会社日立国際電気 | 基板処理方法及び半導体製造装置 |
| US8158017B2 (en) * | 2008-05-12 | 2012-04-17 | Lam Research Corporation | Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations |
| JP5102706B2 (ja) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | バッフル板及び基板処理装置 |
| JP2013511814A (ja) * | 2009-11-19 | 2013-04-04 | ラム リサーチ コーポレーション | プラズマ処理システムを制御するための方法および装置 |
| JP5397215B2 (ja) * | 2009-12-25 | 2014-01-22 | ソニー株式会社 | 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム |
| US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
| US9330990B2 (en) | 2012-10-17 | 2016-05-03 | Tokyo Electron Limited | Method of endpoint detection of plasma etching process using multivariate analysis |
| JP6312405B2 (ja) * | 2013-11-05 | 2018-04-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JPWO2015125193A1 (ja) * | 2014-02-21 | 2017-03-30 | キヤノンアネルバ株式会社 | 処理装置 |
| JP6388491B2 (ja) * | 2014-05-02 | 2018-09-12 | 三菱重工業株式会社 | 計測装置を備えたプラズマ発生装置及びプラズマ推進器 |
| JP6310866B2 (ja) * | 2015-01-30 | 2018-04-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法並びに解析方法 |
| US10269545B2 (en) * | 2016-08-03 | 2019-04-23 | Lam Research Corporation | Methods for monitoring plasma processing systems for advanced process and tool control |
| JP6875224B2 (ja) * | 2017-08-08 | 2021-05-19 | 株式会社日立ハイテク | プラズマ処理装置及び半導体装置製造システム |
| JP6676020B2 (ja) * | 2017-09-20 | 2020-04-08 | 株式会社日立ハイテク | プラズマ処理装置及びプラズマ処理装置状態予測方法 |
| JP6990634B2 (ja) * | 2018-08-21 | 2022-02-03 | 株式会社日立ハイテク | 状態予測装置及び半導体製造装置 |
| JP7154119B2 (ja) * | 2018-12-06 | 2022-10-17 | 東京エレクトロン株式会社 | 制御方法及びプラズマ処理装置 |
| CN111326387B (zh) * | 2018-12-17 | 2023-04-21 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
| JP7270489B2 (ja) * | 2019-07-10 | 2023-05-10 | 東京エレクトロン株式会社 | 性能算出方法および処理装置 |
| JP2021038452A (ja) * | 2019-09-05 | 2021-03-11 | 東京エレクトロン株式会社 | プラズマ処理装置及び制御方法 |
| KR102797798B1 (ko) | 2021-07-13 | 2025-04-22 | 주식회사 히타치하이테크 | 진단 장치 및 진단 방법 그리고 플라스마 처리 장치 및 반도체 장치 제조 시스템 |
| US12476094B2 (en) * | 2021-09-27 | 2025-11-18 | Applied Materials, Inc. | Model-based characterization of plasmas in semiconductor processing systems |
| JPWO2024181164A1 (enExample) * | 2023-03-01 | 2024-09-06 | ||
| JP2024137176A (ja) * | 2023-03-24 | 2024-10-07 | 株式会社Ｓｃｒｅｅｎホールディングス | 分析装置、分析方法および分析プログラム |
| JP7667486B1 (ja) | 2023-12-13 | 2025-04-23 | ダイキン工業株式会社 | 探索装置、プラズマ処理装置、および探索方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US181299A (en) * | 1876-08-22 | Improvement in pumps | ||
| US6197116B1 (en) | 1996-08-29 | 2001-03-06 | Fujitsu Limited | Plasma processing system |
| JP3630931B2 (ja) * | 1996-08-29 | 2005-03-23 | 富士通株式会社 | プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法 |
| KR100560886B1 (ko) * | 1997-09-17 | 2006-03-13 | 동경 엘렉트론 주식회사 | 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법 |
| US6151532A (en) * | 1998-03-03 | 2000-11-21 | Lam Research Corporation | Method and apparatus for predicting plasma-process surface profiles |
| WO2000068986A1 (fr) * | 1999-05-07 | 2000-11-16 | Tokyo Electron Limited | Procédé et appareil de traitement sous vide |
| JP3709552B2 (ja) * | 1999-09-03 | 2005-10-26 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| US6725121B1 (en) * | 2001-05-24 | 2004-04-20 | Advanced Micro Devices, Inc. | Method and apparatus for using a dynamic control model to compensate for a process interrupt |
| JP3639268B2 (ja) * | 2002-06-14 | 2005-04-20 | 株式会社日立製作所 | エッチング処理方法 |
| JP4317701B2 (ja) | 2003-03-12 | 2009-08-19 | 東京エレクトロン株式会社 | 処理結果の予測方法及び予測装置 |
-
2004
- 2004-01-08 JP JP2004002883A patent/JP4448335B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-07 KR KR1020050001514A patent/KR100612736B1/ko not_active Expired - Fee Related
- 2005-01-07 US US11/030,049 patent/US7289866B2/en not_active Expired - Lifetime
- 2005-01-07 TW TW094100506A patent/TW200527256A/zh not_active IP Right Cessation
- 2005-01-10 CN CNB200510000398XA patent/CN100401481C/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684843B (zh) * | 2018-01-30 | 2020-02-11 | 日商日立全球先端科技股份有限公司 | 電漿處理裝置及狀態預測裝置 |
| US11107664B2 (en) | 2018-01-30 | 2021-08-31 | Hitachi High-Tech Corporation | Plasma processing apparatus and prediction apparatus of the condition of plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI356322B (enExample) | 2012-01-11 |
| CN100401481C (zh) | 2008-07-09 |
| US7289866B2 (en) | 2007-10-30 |
| JP2005197503A (ja) | 2005-07-21 |
| KR100612736B1 (ko) | 2006-08-21 |
| KR20050073414A (ko) | 2005-07-13 |
| CN1641841A (zh) | 2005-07-20 |
| JP4448335B2 (ja) | 2010-04-07 |
| US20050154482A1 (en) | 2005-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |