CN100401481C - 等离子体处理方法和等离子体装置 - Google Patents

等离子体处理方法和等离子体装置 Download PDF

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Publication number
CN100401481C
CN100401481C CNB200510000398XA CN200510000398A CN100401481C CN 100401481 C CN100401481 C CN 100401481C CN B200510000398X A CNB200510000398X A CN B200510000398XA CN 200510000398 A CN200510000398 A CN 200510000398A CN 100401481 C CN100401481 C CN 100401481C
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CN
China
Prior art keywords
model
operating condition
measurement data
plasma
plasma processing
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Expired - Fee Related
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CNB200510000398XA
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English (en)
Chinese (zh)
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CN1641841A (zh
Inventor
友安昌幸
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1641841A publication Critical patent/CN1641841A/zh
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Publication of CN100401481C publication Critical patent/CN100401481C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32201—Build statistical model of past normal proces, compare with actual process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CNB200510000398XA 2004-01-08 2005-01-10 等离子体处理方法和等离子体装置 Expired - Fee Related CN100401481C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20042883 2004-01-08
JP2004002883A JP4448335B2 (ja) 2004-01-08 2004-01-08 プラズマ処理方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
CN1641841A CN1641841A (zh) 2005-07-20
CN100401481C true CN100401481C (zh) 2008-07-09

Family

ID=34737130

Family Applications (1)

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CNB200510000398XA Expired - Fee Related CN100401481C (zh) 2004-01-08 2005-01-10 等离子体处理方法和等离子体装置

Country Status (5)

Country Link
US (1) US7289866B2 (enExample)
JP (1) JP4448335B2 (enExample)
KR (1) KR100612736B1 (enExample)
CN (1) CN100401481C (enExample)
TW (1) TW200527256A (enExample)

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US7596421B2 (en) * 2005-06-21 2009-09-29 Kabushik Kaisha Toshiba Process control system, process control method, and method of manufacturing electronic apparatus
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
JP4874678B2 (ja) 2006-03-07 2012-02-15 株式会社東芝 半導体製造装置の制御方法、および半導体製造装置の制御システム
JP4640828B2 (ja) * 2006-03-17 2011-03-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5107597B2 (ja) * 2006-03-29 2012-12-26 東京エレクトロン株式会社 プラズマ処理装置
US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US7286948B1 (en) * 2006-06-16 2007-10-23 Applied Materials, Inc. Method for determining plasma characteristics
US7676790B1 (en) 2006-08-04 2010-03-09 Lam Research Corporation Plasma processing system component analysis software and methods and systems for creating the same
JP5105399B2 (ja) * 2006-08-08 2012-12-26 東京エレクトロン株式会社 データ収集方法，基板処理装置，基板処理システム
US7937178B2 (en) * 2006-08-28 2011-05-03 Tokyo Electron Limited Charging method for semiconductor device manufacturing apparatus, storage medium storing program for implementing the charging method, and semiconductor device manufacturing apparatus implementing the charging method
JP5312765B2 (ja) * 2007-01-26 2013-10-09 株式会社日立国際電気 基板処理方法及び半導体製造装置
US8158017B2 (en) * 2008-05-12 2012-04-17 Lam Research Corporation Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
JP2013511814A (ja) * 2009-11-19 2013-04-04 ラム リサーチ コーポレーション プラズマ処理システムを制御するための方法および装置
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US9330990B2 (en) 2012-10-17 2016-05-03 Tokyo Electron Limited Method of endpoint detection of plasma etching process using multivariate analysis
JP6312405B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 プラズマ処理装置
JPWO2015125193A1 (ja) * 2014-02-21 2017-03-30 キヤノンアネルバ株式会社 処理装置
JP6388491B2 (ja) * 2014-05-02 2018-09-12 三菱重工業株式会社 計測装置を備えたプラズマ発生装置及びプラズマ推進器
JP6310866B2 (ja) * 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
JP6875224B2 (ja) * 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
JP6676020B2 (ja) * 2017-09-20 2020-04-08 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理装置状態予測方法
JP6914211B2 (ja) * 2018-01-30 2021-08-04 株式会社日立ハイテク プラズマ処理装置及び状態予測装置
JP6990634B2 (ja) * 2018-08-21 2022-02-03 株式会社日立ハイテク 状態予測装置及び半導体製造装置
JP7154119B2 (ja) * 2018-12-06 2022-10-17 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
JP7270489B2 (ja) * 2019-07-10 2023-05-10 東京エレクトロン株式会社 性能算出方法および処理装置
JP2021038452A (ja) * 2019-09-05 2021-03-11 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
KR102797798B1 (ko) 2021-07-13 2025-04-22 주식회사 히타치하이테크 진단 장치 및 진단 방법 그리고 플라스마 처리 장치 및 반도체 장치 제조 시스템
US12476094B2 (en) * 2021-09-27 2025-11-18 Applied Materials, Inc. Model-based characterization of plasmas in semiconductor processing systems
JPWO2024181164A1 (enExample) * 2023-03-01 2024-09-06
JP2024137176A (ja) * 2023-03-24 2024-10-07 株式会社Ｓｃｒｅｅｎホールディングス 分析装置、分析方法および分析プログラム
JP7667486B1 (ja) 2023-12-13 2025-04-23 ダイキン工業株式会社 探索装置、プラズマ処理装置、および探索方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
US6503364B1 (en) * 1999-09-03 2003-01-07 Hitachi, Ltd. Plasma processing apparatus

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US6197116B1 (en) 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
KR100560886B1 (ko) * 1997-09-17 2006-03-13 동경 엘렉트론 주식회사 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
WO2000068986A1 (fr) * 1999-05-07 2000-11-16 Tokyo Electron Limited Procédé et appareil de traitement sous vide
US6725121B1 (en) * 2001-05-24 2004-04-20 Advanced Micro Devices, Inc. Method and apparatus for using a dynamic control model to compensate for a process interrupt
JP3639268B2 (ja) * 2002-06-14 2005-04-20 株式会社日立製作所 エッチング処理方法
JP4317701B2 (ja) 2003-03-12 2009-08-19 東京エレクトロン株式会社 処理結果の予測方法及び予測装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
US6503364B1 (en) * 1999-09-03 2003-01-07 Hitachi, Ltd. Plasma processing apparatus

Also Published As

Publication number Publication date
TWI356322B (enExample) 2012-01-11
US7289866B2 (en) 2007-10-30
TW200527256A (en) 2005-08-16
JP2005197503A (ja) 2005-07-21
KR100612736B1 (ko) 2006-08-21
KR20050073414A (ko) 2005-07-13
CN1641841A (zh) 2005-07-20
JP4448335B2 (ja) 2010-04-07
US20050154482A1 (en) 2005-07-14

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SE01 Entry into force of request for substantive examination
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Granted publication date: 20080709

Termination date: 20210110