KR100612736B1 - 플라즈마 처리 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마 처리 방법 및 플라즈마 처리 장치 Download PDF

Info

Publication number
KR100612736B1
KR100612736B1 KR1020050001514A KR20050001514A KR100612736B1 KR 100612736 B1 KR100612736 B1 KR 100612736B1 KR 1020050001514 A KR1020050001514 A KR 1020050001514A KR 20050001514 A KR20050001514 A KR 20050001514A KR 100612736 B1 KR100612736 B1 KR 100612736B1
Authority
KR
South Korea
Prior art keywords
measurement data
model
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050001514A
Other languages
English (en)
Korean (ko)
Other versions
KR20050073414A (ko
Inventor
도모야스마사유키
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20050073414A publication Critical patent/KR20050073414A/ko
Application granted granted Critical
Publication of KR100612736B1 publication Critical patent/KR100612736B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32201—Build statistical model of past normal proces, compare with actual process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020050001514A 2004-01-08 2005-01-07 플라즈마 처리 방법 및 플라즈마 처리 장치 Expired - Fee Related KR100612736B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00002883 2004-01-08
JP2004002883A JP4448335B2 (ja) 2004-01-08 2004-01-08 プラズマ処理方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20050073414A KR20050073414A (ko) 2005-07-13
KR100612736B1 true KR100612736B1 (ko) 2006-08-21

Family

ID=34737130

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050001514A Expired - Fee Related KR100612736B1 (ko) 2004-01-08 2005-01-07 플라즈마 처리 방법 및 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US7289866B2 (enExample)
JP (1) JP4448335B2 (enExample)
KR (1) KR100612736B1 (enExample)
CN (1) CN100401481C (enExample)
TW (1) TW200527256A (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7596421B2 (en) * 2005-06-21 2009-09-29 Kabushik Kaisha Toshiba Process control system, process control method, and method of manufacturing electronic apparatus
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
JP4874678B2 (ja) 2006-03-07 2012-02-15 株式会社東芝 半導体製造装置の制御方法、および半導体製造装置の制御システム
JP4640828B2 (ja) * 2006-03-17 2011-03-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5107597B2 (ja) * 2006-03-29 2012-12-26 東京エレクトロン株式会社 プラズマ処理装置
US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US7286948B1 (en) * 2006-06-16 2007-10-23 Applied Materials, Inc. Method for determining plasma characteristics
US7676790B1 (en) 2006-08-04 2010-03-09 Lam Research Corporation Plasma processing system component analysis software and methods and systems for creating the same
JP5105399B2 (ja) * 2006-08-08 2012-12-26 東京エレクトロン株式会社 データ収集方法，基板処理装置，基板処理システム
US7937178B2 (en) * 2006-08-28 2011-05-03 Tokyo Electron Limited Charging method for semiconductor device manufacturing apparatus, storage medium storing program for implementing the charging method, and semiconductor device manufacturing apparatus implementing the charging method
JP5312765B2 (ja) * 2007-01-26 2013-10-09 株式会社日立国際電気 基板処理方法及び半導体製造装置
US8158017B2 (en) * 2008-05-12 2012-04-17 Lam Research Corporation Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
JP2013511814A (ja) * 2009-11-19 2013-04-04 ラム リサーチ コーポレーション プラズマ処理システムを制御するための方法および装置
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US9330990B2 (en) 2012-10-17 2016-05-03 Tokyo Electron Limited Method of endpoint detection of plasma etching process using multivariate analysis
JP6312405B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 プラズマ処理装置
JPWO2015125193A1 (ja) * 2014-02-21 2017-03-30 キヤノンアネルバ株式会社 処理装置
JP6388491B2 (ja) * 2014-05-02 2018-09-12 三菱重工業株式会社 計測装置を備えたプラズマ発生装置及びプラズマ推進器
JP6310866B2 (ja) * 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
JP6875224B2 (ja) * 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
JP6676020B2 (ja) * 2017-09-20 2020-04-08 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理装置状態予測方法
JP6914211B2 (ja) * 2018-01-30 2021-08-04 株式会社日立ハイテク プラズマ処理装置及び状態予測装置
JP6990634B2 (ja) * 2018-08-21 2022-02-03 株式会社日立ハイテク 状態予測装置及び半導体製造装置
JP7154119B2 (ja) * 2018-12-06 2022-10-17 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
JP7270489B2 (ja) * 2019-07-10 2023-05-10 東京エレクトロン株式会社 性能算出方法および処理装置
JP2021038452A (ja) * 2019-09-05 2021-03-11 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
KR102797798B1 (ko) 2021-07-13 2025-04-22 주식회사 히타치하이테크 진단 장치 및 진단 방법 그리고 플라스마 처리 장치 및 반도체 장치 제조 시스템
US12476094B2 (en) * 2021-09-27 2025-11-18 Applied Materials, Inc. Model-based characterization of plasmas in semiconductor processing systems
JPWO2024181164A1 (enExample) * 2023-03-01 2024-09-06
JP2024137176A (ja) * 2023-03-24 2024-10-07 株式会社Ｓｃｒｅｅｎホールディングス 分析装置、分析方法および分析プログラム
JP7667486B1 (ja) 2023-12-13 2025-04-23 ダイキン工業株式会社 探索装置、プラズマ処理装置、および探索方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US181299A (en) * 1876-08-22 Improvement in pumps
US6197116B1 (en) 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
JP3630931B2 (ja) * 1996-08-29 2005-03-23 富士通株式会社 プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
KR100560886B1 (ko) * 1997-09-17 2006-03-13 동경 엘렉트론 주식회사 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
WO2000068986A1 (fr) * 1999-05-07 2000-11-16 Tokyo Electron Limited Procédé et appareil de traitement sous vide
JP3709552B2 (ja) * 1999-09-03 2005-10-26 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6725121B1 (en) * 2001-05-24 2004-04-20 Advanced Micro Devices, Inc. Method and apparatus for using a dynamic control model to compensate for a process interrupt
JP3639268B2 (ja) * 2002-06-14 2005-04-20 株式会社日立製作所 エッチング処理方法
JP4317701B2 (ja) 2003-03-12 2009-08-19 東京エレクトロン株式会社 処理結果の予測方法及び予測装置

Also Published As

Publication number Publication date
TWI356322B (enExample) 2012-01-11
CN100401481C (zh) 2008-07-09
US7289866B2 (en) 2007-10-30
TW200527256A (en) 2005-08-16
JP2005197503A (ja) 2005-07-21
KR20050073414A (ko) 2005-07-13
CN1641841A (zh) 2005-07-20
JP4448335B2 (ja) 2010-04-07
US20050154482A1 (en) 2005-07-14

Similar Documents

Publication Publication Date Title
KR100612736B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
JP4317701B2 (ja) 処理結果の予測方法及び予測装置
JP4464276B2 (ja) プラズマ処理方法及びプラズマ処理装置
US20040235304A1 (en) Plasma treatment apparatus
KR100779178B1 (ko) 플라즈마처리장치
US7263463B2 (en) Prediction apparatus and method for a plasma processing apparatus
WO2003098677A1 (en) Method of predicting processing device condition or processed result
US7389203B2 (en) Method and apparatus for deciding cause of abnormality in plasma processing apparatus
KR100628392B1 (ko) 처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템
JP4220378B2 (ja) 処理結果の予測方法および処理装置
JP2014022695A (ja) プラズマ処理装置及びその校正方法
JP4274348B2 (ja) プロセスの予測方法及び処理装置並びにプロセス予測プログラム
JP4173311B2 (ja) シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置
JP4675266B2 (ja) 基板処理装置の処理結果の予測方法及び予測装置
US7313451B2 (en) Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium
US20060049036A1 (en) Method and apparatus for real-time control and monitor of deposition processes
JP2016086040A (ja) 半導体製造装置の出力検査方法及び半導体製造装置
TW202501182A (zh) 製造工具校準
TW202405866A (zh) 處理資料的分析方法、及資訊處理裝置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20120724

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130719

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140721

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150716

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20160721

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20170720

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20180717

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210809

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210809

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000