TW200520226A - Thin-film field effect transistor and making method thereof - Google Patents

Thin-film field effect transistor and making method thereof

Info

Publication number
TW200520226A
TW200520226A TW093126007A TW93126007A TW200520226A TW 200520226 A TW200520226 A TW 200520226A TW 093126007 A TW093126007 A TW 093126007A TW 93126007 A TW93126007 A TW 93126007A TW 200520226 A TW200520226 A TW 200520226A
Authority
TW
Taiwan
Prior art keywords
thin
field effect
effect transistor
film field
making method
Prior art date
Application number
TW093126007A
Other languages
English (en)
Other versions
TWI373134B (zh
Inventor
Ikuo Fukui
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200520226A publication Critical patent/TW200520226A/zh
Application granted granted Critical
Publication of TWI373134B publication Critical patent/TWI373134B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
TW093126007A 2003-08-28 2004-08-27 Thin-film field effect transistor and making method thereof TW200520226A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003304019A JP2005072528A (ja) 2003-08-28 2003-08-28 薄層電界効果トランジスター及びその製造方法

Publications (2)

Publication Number Publication Date
TW200520226A true TW200520226A (en) 2005-06-16
TWI373134B TWI373134B (zh) 2012-09-21

Family

ID=34101211

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093126007A TW200520226A (en) 2003-08-28 2004-08-27 Thin-film field effect transistor and making method thereof

Country Status (6)

Country Link
US (2) US20050045876A1 (zh)
EP (1) EP1511096B1 (zh)
JP (1) JP2005072528A (zh)
KR (2) KR100915508B1 (zh)
CN (1) CN100514673C (zh)
TW (1) TW200520226A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497788B (zh) * 2008-09-01 2015-08-21 Univ Osaka 有機場效電晶體及其製造方法

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KR101260981B1 (ko) 2004-06-04 2013-05-10 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
US7619242B2 (en) * 2005-02-25 2009-11-17 Xerox Corporation Celluloses and devices thereof
US7265380B2 (en) * 2005-03-25 2007-09-04 Osaka University Ambipolar organic thin-film field-effect transistor and making method
JP4883558B2 (ja) * 2005-03-25 2012-02-22 国立大学法人大阪大学 両極性有機電界効果薄層トランジスター及びその製造方法
JP4914828B2 (ja) * 2005-03-28 2012-04-11 パイオニア株式会社 ゲート絶縁膜、有機トランジスタ、有機ｅｌ表示装置の製造方法、ディスプレイ
JP4984416B2 (ja) * 2005-03-31 2012-07-25 凸版印刷株式会社 薄膜トランジスタの製造方法
JP2007053147A (ja) * 2005-08-16 2007-03-01 Sony Corp 有機半導体装置及びその製造方法
US8057870B2 (en) * 2006-05-04 2011-11-15 Lg Chem, Ltd. Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same
US8975073B2 (en) 2006-11-21 2015-03-10 The Charles Stark Draper Laboratory, Inc. Microfluidic device comprising silk films coupled to form a microchannel
WO2008085904A1 (en) * 2007-01-05 2008-07-17 Charles Stark Draper Laboratory, Inc. Biodegradable electronic devices
JP5152493B2 (ja) * 2007-03-26 2013-02-27 国立大学法人大阪大学 有機電界効果トランジスター及びその製造方法
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
WO2010042653A1 (en) 2008-10-07 2010-04-15 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
TWI468493B (zh) * 2009-02-27 2015-01-11 Nippon Steel & Sumikin Chem Co A polymer luminescent material, a method for manufacturing the same, and an organic electroluminescent device
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
CN104224171B (zh) 2010-03-17 2017-06-09 伊利诺伊大学评议会 基于生物可吸收基质的可植入生物医学装置
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
WO2012166686A2 (en) 2011-05-27 2012-12-06 Mc10, Inc. Electronic, optical and/or mechanical apparatus and systems and methods for fabricating same
EP2713863B1 (en) 2011-06-03 2020-01-15 The Board of Trustees of the University of Illionis Conformable actively multiplexed high-density surface electrode array for brain interfacing
JP6231489B2 (ja) 2011-12-01 2017-11-15 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ プログラム可能な変化を被るように設計された遷移デバイス
WO2013149181A1 (en) 2012-03-30 2013-10-03 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
EP3000125A4 (en) 2013-05-22 2017-02-08 Transient Electronics, Inc. Controlled transformation of non-transient electronics
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
TW201917098A (zh) * 2017-10-20 2019-05-01 行政院原子能委員會核能硏究所 奈米結構複合材料及其製作方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497788B (zh) * 2008-09-01 2015-08-21 Univ Osaka 有機場效電晶體及其製造方法

Also Published As

Publication number Publication date
EP1511096B1 (en) 2013-02-27
US8088642B2 (en) 2012-01-03
KR20050021318A (ko) 2005-03-07
CN100514673C (zh) 2009-07-15
CN1599077A (zh) 2005-03-23
TWI373134B (zh) 2012-09-21
EP1511096A3 (en) 2007-09-26
US20090124051A1 (en) 2009-05-14
KR100915508B1 (ko) 2009-09-03
KR20090016646A (ko) 2009-02-17
JP2005072528A (ja) 2005-03-17
EP1511096A2 (en) 2005-03-02
US20050045876A1 (en) 2005-03-03

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees