TW200518355A - Light emitting diode with porous sic substrate and method for fabricating - Google Patents
Light emitting diode with porous sic substrate and method for fabricatingInfo
- Publication number
- TW200518355A TW200518355A TW093129268A TW93129268A TW200518355A TW 200518355 A TW200518355 A TW 200518355A TW 093129268 A TW093129268 A TW 093129268A TW 93129268 A TW93129268 A TW 93129268A TW 200518355 A TW200518355 A TW 200518355A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor material
- electrolyte
- fabricating
- light emitting
- emitting diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/61—Electrolytic etching
- H10P50/613—Electrolytic etching of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/676,953 US6972438B2 (en) | 2003-09-30 | 2003-09-30 | Light emitting diode with porous SiC substrate and method for fabricating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200518355A true TW200518355A (en) | 2005-06-01 |
Family
ID=34422124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093129268A TW200518355A (en) | 2003-09-30 | 2004-09-27 | Light emitting diode with porous sic substrate and method for fabricating |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6972438B2 (https=) |
| EP (1) | EP1668710B1 (https=) |
| JP (1) | JP5748384B2 (https=) |
| KR (1) | KR20060090813A (https=) |
| CN (1) | CN100470854C (https=) |
| CA (1) | CA2536154A1 (https=) |
| TW (1) | TW200518355A (https=) |
| WO (1) | WO2005034254A1 (https=) |
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|---|---|---|---|---|
| EP1620903B1 (en) | 2003-04-30 | 2017-08-16 | Cree, Inc. | High-power solid state light emitter package |
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| JP2006179511A (ja) * | 2004-12-20 | 2006-07-06 | Sumitomo Electric Ind Ltd | 発光装置 |
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| KR101198763B1 (ko) * | 2006-03-23 | 2012-11-12 | 엘지이노텍 주식회사 | 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법 |
| US20070241326A1 (en) * | 2006-04-18 | 2007-10-18 | Samsung Electronics Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
| WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
| US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
| US20080025037A1 (en) * | 2006-07-28 | 2008-01-31 | Visteon Global Technologies, Inc. | LED headlamp |
| WO2008024385A2 (en) | 2006-08-23 | 2008-02-28 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
| JP4835377B2 (ja) * | 2006-10-20 | 2011-12-14 | 日立電線株式会社 | 半導体発光素子 |
| KR100826412B1 (ko) * | 2006-11-03 | 2008-04-29 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 제조방법 |
| EP2095011A1 (en) | 2006-12-04 | 2009-09-02 | Cree Led Lighting Solutions, Inc. | Lighting assembly and lighting method |
| WO2008070604A1 (en) * | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| US8021904B2 (en) * | 2007-02-01 | 2011-09-20 | Cree, Inc. | Ohmic contacts to nitrogen polarity GaN |
| US7808657B2 (en) * | 2007-06-28 | 2010-10-05 | International Business Machines Corporation | Wafer and stage alignment using photonic devices |
| JP5431320B2 (ja) | 2007-07-17 | 2014-03-05 | クリー インコーポレイテッド | 内部光学機能を備えた光学素子およびその製造方法 |
| US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
| US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
| US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
| US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US8080849B2 (en) * | 2008-01-17 | 2011-12-20 | International Business Machines Corporation | Characterizing films using optical filter pseudo substrate |
| JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
| US8637883B2 (en) * | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| JP5330880B2 (ja) * | 2009-03-27 | 2013-10-30 | 学校法人 名城大学 | 発光ダイオード素子及びその製造方法 |
| US9093293B2 (en) | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
| US8476668B2 (en) | 2009-04-06 | 2013-07-02 | Cree, Inc. | High voltage low current surface emitting LED |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| WO2011037877A1 (en) | 2009-09-25 | 2011-03-31 | Cree, Inc. | Lighting device with low glare and high light level uniformity |
| JP5961557B2 (ja) | 2010-01-27 | 2016-08-02 | イェイル ユニヴァーシティ | GaNデバイスのための導電率ベースの選択的エッチング及びその用途 |
| US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
| US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
| EP2641279B1 (en) * | 2010-11-19 | 2017-09-27 | Koninklijke Philips N.V. | Islanded carrier for light emitting device |
| WO2013158210A2 (en) | 2012-02-17 | 2013-10-24 | Yale University | Heterogeneous material integration through guided lateral growth |
| WO2014004261A1 (en) | 2012-06-28 | 2014-01-03 | Yale University | Lateral electrochemical etching of iii-nitride materials for microfabrication |
| US20150228414A1 (en) * | 2012-08-22 | 2015-08-13 | Sumitomo Osak Cement Co., Ltd. | Dye-sensitive solar cell paste, porous light-reflective insulation layer, and dye-sensitive solar cell |
| WO2014144698A2 (en) | 2013-03-15 | 2014-09-18 | Yale University | Large-area, laterally-grown epitaxial semiconductor layers |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| US9299899B2 (en) | 2013-07-23 | 2016-03-29 | Grote Industries, Llc | Flexible lighting device having unobtrusive conductive layers |
| US11095096B2 (en) | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
| WO2015160909A1 (en) | 2014-04-16 | 2015-10-22 | Yale University | Method of obtaining planar semipolar gallium nitride surfaces |
| WO2015160903A1 (en) | 2014-04-16 | 2015-10-22 | Yale University | Nitrogen-polar semipolar gan layers and devices on sapphire substrates |
| EP3201952B1 (en) | 2014-09-30 | 2023-03-29 | Yale University | A method for gan vertical microcavity surface emitting laser |
| US11018231B2 (en) | 2014-12-01 | 2021-05-25 | Yale University | Method to make buried, highly conductive p-type III-nitride layers |
| EP3298624B1 (en) | 2015-05-19 | 2023-04-19 | Yale University | A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer |
| CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
| WO2018031876A1 (en) | 2016-08-12 | 2018-02-15 | Yale University | Stacking fault-free semipolar and nonpolar gan grown on foreign substrates by eliminating the nitrogen polar facets during the growth |
| KR102391610B1 (ko) | 2017-08-04 | 2022-04-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 및 광원 장치 |
| US12588433B2 (en) | 2019-10-31 | 2026-03-24 | Yale University | Porous III-nitrides and methods of using and making thereof |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
| FR3132593B1 (fr) * | 2022-02-08 | 2025-04-18 | Centre Nat Rech Scient | Creation d’une fenetre de sortie de rayonnement pour un composant photoemetteur |
| CN119092616A (zh) * | 2024-08-26 | 2024-12-06 | 泉州三安半导体科技有限公司 | 一种发光二极管封装体及发光装置 |
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| US4056415A (en) * | 1975-08-04 | 1977-11-01 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material |
| US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
| US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
| US5298767A (en) | 1992-10-06 | 1994-03-29 | Kulite Semiconductor Products, Inc. | Porous silicon carbide (SiC) semiconductor device |
| JPH077179A (ja) | 1993-06-16 | 1995-01-10 | Sanyo Electric Co Ltd | 発光素子 |
| JPH077180A (ja) * | 1993-06-16 | 1995-01-10 | Sanyo Electric Co Ltd | 発光素子 |
| JPH08148280A (ja) | 1994-04-14 | 1996-06-07 | Toshiba Corp | 半導体装置およびその製造方法 |
| DE19548115C2 (de) * | 1994-12-27 | 2002-08-29 | Nissan Motor | Elektrochemisches Ätzverfahren für ein Halbleitersubstrat sowie Vorrichtung zur Durchführung des Verfahrens |
| JP3985065B2 (ja) * | 1997-05-14 | 2007-10-03 | 忠弘 大見 | 多孔質シリコン基板の形成方法及び多孔質シリコン基板の形成装置 |
| US5939732A (en) * | 1997-05-22 | 1999-08-17 | Kulite Semiconductor Products, Inc. | Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof |
| JP3523197B2 (ja) * | 1998-02-12 | 2004-04-26 | エーシーエム リサーチ,インコーポレイティド | メッキ設備及び方法 |
| US6225647B1 (en) * | 1998-07-27 | 2001-05-01 | Kulite Semiconductor Products, Inc. | Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same |
| TW465123B (en) | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
| CN1252837C (zh) * | 2000-04-26 | 2006-04-19 | 奥斯兰姆奥普托半导体股份有限两合公司 | 在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法 |
| JP3830083B2 (ja) * | 2001-03-07 | 2006-10-04 | スタンレー電気株式会社 | 半導体装置およびその製造方法 |
| JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP3802424B2 (ja) * | 2002-01-15 | 2006-07-26 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP3782357B2 (ja) * | 2002-01-18 | 2006-06-07 | 株式会社東芝 | 半導体発光素子の製造方法 |
| JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
-
2003
- 2003-09-30 US US10/676,953 patent/US6972438B2/en not_active Expired - Lifetime
-
2004
- 2004-09-21 CN CNB2004800279692A patent/CN100470854C/zh not_active Expired - Lifetime
- 2004-09-21 EP EP04788908.4A patent/EP1668710B1/en not_active Expired - Lifetime
- 2004-09-21 JP JP2006533962A patent/JP5748384B2/ja not_active Expired - Lifetime
- 2004-09-21 CA CA002536154A patent/CA2536154A1/en not_active Abandoned
- 2004-09-21 WO PCT/US2004/031050 patent/WO2005034254A1/en not_active Ceased
- 2004-09-21 KR KR1020067005898A patent/KR20060090813A/ko not_active Withdrawn
- 2004-09-27 TW TW093129268A patent/TW200518355A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP5748384B2 (ja) | 2015-07-15 |
| KR20060090813A (ko) | 2006-08-16 |
| EP1668710A1 (en) | 2006-06-14 |
| WO2005034254A1 (en) | 2005-04-14 |
| US20050184307A1 (en) | 2005-08-25 |
| CN1860619A (zh) | 2006-11-08 |
| EP1668710B1 (en) | 2014-12-24 |
| CA2536154A1 (en) | 2005-04-14 |
| CN100470854C (zh) | 2009-03-18 |
| US6972438B2 (en) | 2005-12-06 |
| JP2007507895A (ja) | 2007-03-29 |
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