CN100470854C - 具有多孔性碳化硅基层的发光二极管 - Google Patents

具有多孔性碳化硅基层的发光二极管 Download PDF

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Publication number
CN100470854C
CN100470854C CNB2004800279692A CN200480027969A CN100470854C CN 100470854 C CN100470854 C CN 100470854C CN B2004800279692 A CNB2004800279692 A CN B2004800279692A CN 200480027969 A CN200480027969 A CN 200480027969A CN 100470854 C CN100470854 C CN 100470854C
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CN
China
Prior art keywords
basic unit
emitting area
porous layer
light
layer
Prior art date
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Expired - Lifetime
Application number
CNB2004800279692A
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English (en)
Chinese (zh)
Other versions
CN1860619A (zh
Inventor
郦挺
J·艾贝森
B·科勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kerui Led Co
Original Assignee
Cree Lighting Co
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Publication of CN1860619A publication Critical patent/CN1860619A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
CNB2004800279692A 2003-09-30 2004-09-21 具有多孔性碳化硅基层的发光二极管 Expired - Lifetime CN100470854C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/676,953 2003-09-30
US10/676,953 US6972438B2 (en) 2003-09-30 2003-09-30 Light emitting diode with porous SiC substrate and method for fabricating

Publications (2)

Publication Number Publication Date
CN1860619A CN1860619A (zh) 2006-11-08
CN100470854C true CN100470854C (zh) 2009-03-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800279692A Expired - Lifetime CN100470854C (zh) 2003-09-30 2004-09-21 具有多孔性碳化硅基层的发光二极管

Country Status (8)

Country Link
US (1) US6972438B2 (https=)
EP (1) EP1668710B1 (https=)
JP (1) JP5748384B2 (https=)
KR (1) KR20060090813A (https=)
CN (1) CN100470854C (https=)
CA (1) CA2536154A1 (https=)
TW (1) TW200518355A (https=)
WO (1) WO2005034254A1 (https=)

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US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
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JP5330880B2 (ja) * 2009-03-27 2013-10-30 学校法人 名城大学 発光ダイオード素子及びその製造方法
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
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US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
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JP5961557B2 (ja) 2010-01-27 2016-08-02 イェイル ユニヴァーシティ ＧａＮデバイスのための導電率ベースの選択的エッチング及びその用途
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EP2641279B1 (en) * 2010-11-19 2017-09-27 Koninklijke Philips N.V. Islanded carrier for light emitting device
WO2013158210A2 (en) 2012-02-17 2013-10-24 Yale University Heterogeneous material integration through guided lateral growth
WO2014004261A1 (en) 2012-06-28 2014-01-03 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication
US20150228414A1 (en) * 2012-08-22 2015-08-13 Sumitomo Osak Cement Co., Ltd. Dye-sensitive solar cell paste, porous light-reflective insulation layer, and dye-sensitive solar cell
WO2014144698A2 (en) 2013-03-15 2014-09-18 Yale University Large-area, laterally-grown epitaxial semiconductor layers
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9299899B2 (en) 2013-07-23 2016-03-29 Grote Industries, Llc Flexible lighting device having unobtrusive conductive layers
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
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US5376241A (en) * 1992-10-06 1994-12-27 Kulite Semiconductor Products, Inc. Fabricating porous silicon carbide
US5644156A (en) * 1994-04-14 1997-07-01 Kabushiki Kaisha Toshiba Porous silicon photo-device capable of photoelectric conversion
US6225647B1 (en) * 1998-07-27 2001-05-01 Kulite Semiconductor Products, Inc. Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same
US20010010449A1 (en) * 2000-02-02 2001-08-02 Chien-Chia Chiu High efficiency white light emitting diode
US20030057444A1 (en) * 2001-07-24 2003-03-27 Nichia Corporation Semiconductor light emitting device

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US6225647B1 (en) * 1998-07-27 2001-05-01 Kulite Semiconductor Products, Inc. Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same
US20010010449A1 (en) * 2000-02-02 2001-08-02 Chien-Chia Chiu High efficiency white light emitting diode
US20030057444A1 (en) * 2001-07-24 2003-03-27 Nichia Corporation Semiconductor light emitting device

Also Published As

Publication number Publication date
JP5748384B2 (ja) 2015-07-15
KR20060090813A (ko) 2006-08-16
EP1668710A1 (en) 2006-06-14
WO2005034254A1 (en) 2005-04-14
US20050184307A1 (en) 2005-08-25
CN1860619A (zh) 2006-11-08
EP1668710B1 (en) 2014-12-24
CA2536154A1 (en) 2005-04-14
US6972438B2 (en) 2005-12-06
JP2007507895A (ja) 2007-03-29
TW200518355A (en) 2005-06-01

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Address after: North Carolina

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