TW200516664A - Flat panel display manufacturing apparatus - Google Patents

Flat panel display manufacturing apparatus

Info

Publication number
TW200516664A
TW200516664A TW093134050A TW93134050A TW200516664A TW 200516664 A TW200516664 A TW 200516664A TW 093134050 A TW093134050 A TW 093134050A TW 93134050 A TW93134050 A TW 93134050A TW 200516664 A TW200516664 A TW 200516664A
Authority
TW
Taiwan
Prior art keywords
manufacturing apparatus
flat panel
panel display
display manufacturing
plasma
Prior art date
Application number
TW093134050A
Other languages
English (en)
Other versions
TWI255505B (en
Inventor
Gwang-Ho Hur
Jun-Young Choi
Cheol-Won Lee
Hyun-Hwan Ahn
Young-Joo Hwang
Chun Sik Kim
Original Assignee
Advanced Display Proc Eng Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2003-0080412A external-priority patent/KR100503388B1/ko
Priority claimed from KR10-2003-0080406A external-priority patent/KR100495711B1/ko
Priority claimed from KR1020030089112A external-priority patent/KR100552246B1/ko
Application filed by Advanced Display Proc Eng Co filed Critical Advanced Display Proc Eng Co
Publication of TW200516664A publication Critical patent/TW200516664A/zh
Application granted granted Critical
Publication of TWI255505B publication Critical patent/TWI255505B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Chemical Vapour Deposition (AREA)
TW093134050A 2003-11-14 2004-11-09 Flat panel display manufacturing apparatus TWI255505B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0080412A KR100503388B1 (ko) 2003-11-14 2003-11-14 균일한 플라즈마를 형성하는 평판표시소자 제조장치의공정챔버
KR10-2003-0080406A KR100495711B1 (ko) 2003-11-14 2003-11-14 샤워헤드가 구비되는 평판표시소자 제조장치의 공정챔버
KR1020030089112A KR100552246B1 (ko) 2003-12-09 2003-12-09 플라즈마 차폐 장치

Publications (2)

Publication Number Publication Date
TW200516664A true TW200516664A (en) 2005-05-16
TWI255505B TWI255505B (en) 2006-05-21

Family

ID=34577489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093134050A TWI255505B (en) 2003-11-14 2004-11-09 Flat panel display manufacturing apparatus

Country Status (3)

Country Link
US (2) US20050103267A1 (zh)
CN (1) CN1329962C (zh)
TW (1) TWI255505B (zh)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100596327B1 (ko) * 2004-09-08 2006-07-06 주식회사 에이디피엔지니어링 플라즈마 처리장치
KR100890522B1 (ko) * 2005-01-28 2009-03-27 주식회사 에이디피엔지니어링 플라즈마 처리장치
KR101153161B1 (ko) * 2005-04-01 2012-06-18 주성엔지니어링(주) 가스분사장치 및 이를 포함하는 액정표시소자의 제조장치
US20070169701A1 (en) * 2006-01-21 2007-07-26 Integrated Materials, Inc. Tubular or Other Member Formed of Staves Bonded at Keyway Interlocks
JP5463536B2 (ja) * 2006-07-20 2014-04-09 北陸成型工業株式会社 シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
US7750818B2 (en) 2006-11-29 2010-07-06 Adp Engineering Co., Ltd. System and method for introducing a substrate into a process chamber
US20090194021A1 (en) * 2008-02-01 2009-08-06 Scott Snodgrass Dispenser for a coating apparatus having reduced sag
CN101748384B (zh) * 2008-12-03 2012-07-11 财团法人工业技术研究院 气体分布喷洒模块
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
JP5597463B2 (ja) * 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US20120180954A1 (en) * 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
KR20130086806A (ko) * 2012-01-26 2013-08-05 삼성전자주식회사 박막 증착 장치
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
DE102012110125A1 (de) * 2012-10-24 2014-04-24 Aixtron Se Vorrichtung zum Behandeln von Substraten mit einer auswechselbaren Deckenplatte sowie Verfahren zum Auswechseln einer derartigen Deckenplatte
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9536710B2 (en) * 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
EP3201512A4 (en) * 2014-10-03 2018-03-14 Entegris, Inc. Pressure-regulated gas supply vessel
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) * 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
CN109312461B (zh) * 2016-03-03 2021-07-13 核心技术株式会社 等离子体处理装置和等离子体处理用反应容器的构造
JP6625728B2 (ja) * 2016-03-17 2019-12-25 株式会社Ｊｃｕ プラズマ生成装置
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
JP7365761B2 (ja) * 2018-08-24 2023-10-20 株式会社ニューフレアテクノロジー 気相成長装置
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7152970B2 (ja) * 2019-03-01 2022-10-13 株式会社ニューフレアテクノロジー 気相成長装置
TWM581661U (zh) * 2019-03-07 2019-08-01 群翌能源股份有限公司 Combined protection bucket for high temperature process protected by inert atmosphere
JP7308711B2 (ja) * 2019-09-26 2023-07-14 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05132770A (ja) 1991-11-11 1993-05-28 Canon Inc スパツタ装置
JP3156326B2 (ja) * 1992-01-07 2001-04-16 富士通株式会社 半導体成長装置およびそれによる半導体成長方法
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JP3113796B2 (ja) * 1995-07-10 2000-12-04 東京エレクトロン株式会社 プラズマ処理装置
JPH09218519A (ja) * 1996-02-09 1997-08-19 Nikon Corp 露光装置の環境制御方法及び装置
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
JP3424903B2 (ja) 1997-01-23 2003-07-07 東京エレクトロン株式会社 プラズマ処理装置
JP3480271B2 (ja) * 1997-10-07 2003-12-15 東京エレクトロン株式会社 熱処理装置のシャワーヘッド構造
US6106663A (en) * 1998-06-19 2000-08-22 Lam Research Corporation Semiconductor process chamber electrode
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6402401B1 (en) * 1999-10-19 2002-06-11 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6261408B1 (en) 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
KR100502268B1 (ko) * 2000-03-01 2005-07-22 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 방법
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
CN1327493C (zh) * 2000-05-17 2007-07-18 东京毅力科创株式会社 处理装置部件的装配机构及其装配方法
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
JP2002151473A (ja) * 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
KR100413145B1 (ko) * 2001-01-11 2003-12-31 삼성전자주식회사 가스 인젝터 및 이를 갖는 식각 장치
WO2002101116A1 (en) * 2001-06-07 2002-12-19 Tokyo Electron Limited Method of and apparatus for tailoring an etch profile
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US7052622B2 (en) * 2001-10-17 2006-05-30 Applied Materials, Inc. Method for measuring etch rates during a release process
JP3689732B2 (ja) * 2001-12-05 2005-08-31 株式会社日立ハイテクノロジーズ プラズマ処理装置の監視装置
US7008484B2 (en) * 2002-05-06 2006-03-07 Applied Materials Inc. Method and apparatus for deposition of low dielectric constant materials
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
AU2003263609A1 (en) * 2002-09-20 2004-04-08 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US7182816B2 (en) * 2003-08-18 2007-02-27 Tokyo Electron Limited Particulate reduction using temperature-controlled chamber shield
JP4491262B2 (ja) 2004-03-19 2010-06-30 株式会社シンクロン スパッタ装置及び薄膜形成方法
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system

Also Published As

Publication number Publication date
US8273211B2 (en) 2012-09-25
CN1617309A (zh) 2005-05-18
US20050103267A1 (en) 2005-05-19
CN1329962C (zh) 2007-08-01
TWI255505B (en) 2006-05-21
US20090025877A1 (en) 2009-01-29

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