TW200515485A - Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor - Google Patents

Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor

Info

Publication number
TW200515485A
TW200515485A TW093119079A TW93119079A TW200515485A TW 200515485 A TW200515485 A TW 200515485A TW 093119079 A TW093119079 A TW 093119079A TW 93119079 A TW93119079 A TW 93119079A TW 200515485 A TW200515485 A TW 200515485A
Authority
TW
Taiwan
Prior art keywords
thin film
semiconductor thin
film transistor
laser annealing
evaluating
Prior art date
Application number
TW093119079A
Other languages
English (en)
Other versions
TWI364066B (zh
Inventor
Kazuo Takeda
Takeshi Sato
Masakazu Saito
Jun Gotoh
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Publication of TW200515485A publication Critical patent/TW200515485A/zh
Application granted granted Critical
Publication of TWI364066B publication Critical patent/TWI364066B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW093119079A 2003-10-24 2004-06-29 Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor TW200515485A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003364539A JP2005129769A (ja) 2003-10-24 2003-10-24 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置

Publications (2)

Publication Number Publication Date
TW200515485A true TW200515485A (en) 2005-05-01
TWI364066B TWI364066B (zh) 2012-05-11

Family

ID=34643489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119079A TW200515485A (en) 2003-10-24 2004-06-29 Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor

Country Status (5)

Country Link
US (2) US7151046B2 (zh)
JP (1) JP2005129769A (zh)
KR (1) KR101151312B1 (zh)
CN (1) CN100437906C (zh)
TW (1) TW200515485A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI704596B (zh) * 2014-05-06 2020-09-11 美商應用材料股份有限公司 用於多方向裝置加工的方向處理

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
US7622370B2 (en) 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
CN100362420C (zh) * 2005-07-27 2008-01-16 大连理工大学 一种利用激光退火提高掺稀土氧化铝薄膜光学特性的方法
KR101287314B1 (ko) 2005-12-05 2013-07-17 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 막 처리 시스템과 방법, 및 박막
KR20070078132A (ko) * 2006-01-26 2007-07-31 삼성전자주식회사 실리콘 결정화 마스크, 이를 갖는 실리콘 결정화 장치 및이를 이용한 실리콘 결정화 방법
JP2007208174A (ja) * 2006-02-06 2007-08-16 Fujifilm Corp レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP2008244374A (ja) * 2007-03-29 2008-10-09 Nec Lcd Technologies Ltd 半導体薄膜の製造方法、半導体薄膜及び薄膜トランジスタ
DE112008000934B4 (de) 2007-04-24 2022-10-27 LIMO GmbH Verfahren zur Umstrukturierung von Halbleiterschichten
US20090046757A1 (en) * 2007-08-16 2009-02-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US8415670B2 (en) * 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US7906392B2 (en) * 2008-01-15 2011-03-15 Sandisk 3D Llc Pillar devices and methods of making thereof
US8017429B2 (en) * 2008-02-19 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
KR100864062B1 (ko) * 2008-02-22 2008-10-16 한국철강 주식회사 태양전지 모듈 패터닝 장치
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP2010016078A (ja) 2008-07-02 2010-01-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ及びシリコン単結晶ウェーハの製造方法並びにシリコン単結晶ウェーハの評価方法
EP2351067A4 (en) 2008-11-14 2013-07-03 Univ Columbia SYSTEMS AND METHODS FOR CRYSTALLIZATION OF THIN FILMS
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
JP5444053B2 (ja) * 2010-03-15 2014-03-19 株式会社日立ハイテクノロジーズ 多結晶シリコン薄膜検査方法及びその装置
JP5454911B2 (ja) * 2010-03-25 2014-03-26 株式会社日本製鋼所 アニール処理体の製造方法およびレーザアニール装置
EP2576873A4 (en) * 2010-06-03 2013-11-27 Univ Columbia SINGLE SCANNING AND LINEAR SCANNING CRYSTALLIZATION USING STACKED SCANNING ELEMENTS
KR20130129887A (ko) * 2010-07-12 2013-11-29 데쿠세리아루즈 가부시키가이샤 원반의 제조 방법, 배향막의 제조 방법, 위상차판의 제조 방법 및 표시 장치의 제조 방법
KR101666661B1 (ko) * 2010-08-26 2016-10-17 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 평판 표시 장치
ES2609481T3 (es) 2012-07-04 2017-04-20 Saint-Gobain Glass France Dispositivo y procedimiento para el procesamiento por láser de sustratos de gran superficie utilizando al menos dos puentes
US8937770B2 (en) 2012-07-24 2015-01-20 Coherent Gmbh Excimer laser apparatus projecting a beam with a selectively variable short-axis beam profile
CN103835000A (zh) * 2012-11-20 2014-06-04 上海华虹宏力半导体制造有限公司 一种高温改善多晶硅表面粗糙度的方法
CN103839790B (zh) * 2012-11-23 2016-09-28 中芯国际集成电路制造(上海)有限公司 激光退火装置及退火方法
US9529239B2 (en) 2013-12-31 2016-12-27 Shenzhen China Star Optoelectronics Technologies Co., Ltd. Manufacturing method and repairing method for display device as well as liquid crystal display panel
CN103995378B (zh) * 2013-12-31 2016-10-05 深圳市华星光电技术有限公司 制造显示装置的方法和修复方法以及液晶显示面板
EP2899749A1 (en) * 2014-01-24 2015-07-29 Excico France Method for forming polycrystalline silicon by laser irradiation
CN103934577B (zh) * 2014-03-12 2017-02-15 苏州福唐智能科技有限公司 切宽可调的无杂光激光加工系统
TWI577488B (zh) * 2014-11-17 2017-04-11 財團法人工業技術研究院 表面加工方法
KR102531651B1 (ko) * 2016-01-06 2023-05-11 삼성디스플레이 주식회사 레이저 결정화 장치
CN105654499B (zh) * 2016-01-27 2018-02-16 中国科学院力学研究所 一种激光表面改性的图像评价方法
CN105957023B (zh) * 2016-04-19 2018-11-23 南京工程学院 一种基于色度空间变换的激光线条纹图像增强和去噪方法
TWI637805B (zh) * 2016-10-25 2018-10-11 財團法人工業技術研究院 金屬表面之雷射加工系統及其方法
WO2018101154A1 (ja) * 2016-11-30 2018-06-07 株式会社ブイ・テクノロジー レーザ照射装置および薄膜トランジスタの製造方法
JP7265743B2 (ja) * 2018-09-18 2023-04-27 株式会社オプトピア 光源装置及びそれを用いたラインビームホモジェナイザ
JP2020107716A (ja) * 2018-12-27 2020-07-09 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置
KR20220022016A (ko) * 2020-08-14 2022-02-23 삼성디스플레이 주식회사 디스플레이 장치의 제조 장치 및 디스플레이 장치의 제조 방법
DE102020126269A1 (de) * 2020-10-07 2022-04-07 Trumpf Laser- Und Systemtechnik Gmbh Vorrichtung und Verfahren zum Erzeugen einer definierten Laserlinie auf einer Arbeitsebene

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6476715A (en) 1987-09-17 1989-03-22 Nec Corp Manufacture of polycrystalline semiconductor thin film
US5756364A (en) * 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
US5854803A (en) * 1995-01-12 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
DE69601432T2 (de) * 1995-03-16 1999-10-07 Minnesota Mining & Mfg Schwarz-Metall wärmebildbare Transparenz-Elemente
TW297138B (zh) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
JP3734228B2 (ja) * 1995-07-14 2006-01-11 パイオニア株式会社 光記録媒体及びその製造方法
JP3844537B2 (ja) 1996-03-08 2006-11-15 シャープ株式会社 多結晶半導体膜の製造方法
WO1997045827A1 (en) 1996-05-28 1997-12-04 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
JP3349355B2 (ja) 1996-08-19 2002-11-25 三洋電機株式会社 半導体膜のレーザーアニール方法
JP3337059B2 (ja) 1997-05-12 2002-10-21 カシオ計算機株式会社 半導体薄膜の結晶化方法及び薄膜トランジスタの製造方法並びにその方法に用いられるレーザアニール装置
JP4116141B2 (ja) 1998-03-26 2008-07-09 東芝松下ディスプレイテクノロジー株式会社 結晶シリコン膜の製造方法
JP2000011417A (ja) 1998-06-26 2000-01-14 Toshiba Corp 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置
JP4439630B2 (ja) * 1998-10-05 2010-03-24 株式会社半導体エネルギー研究所 シリンドリカルレンズアレイおよびビームホモジェナイザー
JP2000353664A (ja) 1999-06-11 2000-12-19 Seiko Epson Corp 半導体装置の製造方法、薄膜トランジスタの製造方法、アクティブマトリクス基板の製造方法、および電気光学装置
TW494444B (en) * 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
JP4220156B2 (ja) 2000-03-21 2009-02-04 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化法による処理中及び処理後のシリコンフィルムの表面平坦化法
TWI233098B (en) * 2000-08-31 2005-05-21 Matsushita Electric Ind Co Ltd Data recoding medium, the manufacturing method thereof, and the record reproducing method thereof
JP3859978B2 (ja) * 2001-02-28 2006-12-20 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体材料膜に横方向に延在する結晶領域を形成する装置
JP2002299233A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体薄膜の形成方法
JP4135347B2 (ja) 2001-10-02 2008-08-20 株式会社日立製作所 ポリシリコン膜生成方法
JP3671010B2 (ja) 2002-02-18 2005-07-13 三洋電機株式会社 半導体膜のレーザーアニール方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI704596B (zh) * 2014-05-06 2020-09-11 美商應用材料股份有限公司 用於多方向裝置加工的方向處理
US10825665B2 (en) 2014-05-06 2020-11-03 Applied Materials, Inc. Directional treatment for multi-dimensional device processing

Also Published As

Publication number Publication date
KR20050039521A (ko) 2005-04-29
US20050139830A1 (en) 2005-06-30
US20060254497A1 (en) 2006-11-16
JP2005129769A (ja) 2005-05-19
CN1610061A (zh) 2005-04-27
US7151046B2 (en) 2006-12-19
KR101151312B1 (ko) 2012-06-08
TWI364066B (zh) 2012-05-11
CN100437906C (zh) 2008-11-26

Similar Documents

Publication Publication Date Title
TW200515485A (en) Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor
CN105102179B (zh) 激光加工装置及激光加工方法
US7943936B2 (en) Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
FR2849530B1 (fr) Masque pour solidification laterale sequentielle et procede de cristallisation utilisant celui ci
TW200603440A (en) Laser irradiation method and method for manufacturing semiconductor device using the same
TW200508811A (en) Exposure method, exposure device, and device manufacturing method
RU2011139388A (ru) Способ и устройство для структурирования поверхности твердого тела, покрытого твердым материалом, с помощью лазера
EP2397900A4 (en) PHOTOGRAPHIC MASK AND METHODS OF MANUFACTURING AND CORRECTING PHOTOGRAPHIC MASK
TW201321109A (zh) 雷射切割方法
CA2116805A1 (en) Mask and method for manufacturing the same
JP2008085236A (ja) ２波長レーザアニール装置
JP2011109073A (ja) レーザマスク及びこれを利用した逐次的横方向結晶化方法
KR101867501B1 (ko) 레이저 에너지를 반도체 재료 표면에 조사하는 방법 및 장치
KR100478623B1 (ko) 반도체 박막의 형성방법 및 반도체 박막의 형성장치
TWI265982B (en) Method of crystallizing silicon
JP2007324519A (ja) レーザアニール装置及び表示装置の製造方法
JP6483271B2 (ja) 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP2005317938A (ja) 結晶化装置、結晶化方法、デバイス、光変調素子、及び表示装置
KR101491043B1 (ko) 결정화방법 및 결정화장치
JP2006013050A (ja) レーザビーム投影マスク及びそれを用いたレーザ加工方法、レーザ加工装置
KR20110103222A (ko) 비정질 실리콘막의 결정화 방법
TWI239936B (en) Laser annealing apparatus and laser annealing method
US7772135B2 (en) Method for forming poly-silicon film
US9958709B2 (en) Dynamic optical valve for mitigating non-uniform heating in laser processing
US7575834B2 (en) Phase shifter for laser annealing

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees