TW200515485A - Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor - Google Patents

Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor

Info

Publication number
TW200515485A
TW200515485A TW093119079A TW93119079A TW200515485A TW 200515485 A TW200515485 A TW 200515485A TW 093119079 A TW093119079 A TW 093119079A TW 93119079 A TW93119079 A TW 93119079A TW 200515485 A TW200515485 A TW 200515485A
Authority
TW
Taiwan
Prior art keywords
thin film
semiconductor thin
film transistor
laser annealing
evaluating
Prior art date
Application number
TW093119079A
Other languages
English (en)
Chinese (zh)
Other versions
TWI364066B (https=
Inventor
Kazuo Takeda
Takeshi Sato
Masakazu Saito
Jun Gotoh
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Publication of TW200515485A publication Critical patent/TW200515485A/zh
Application granted granted Critical
Publication of TWI364066B publication Critical patent/TWI364066B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW093119079A 2003-10-24 2004-06-29 Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor TW200515485A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003364539A JP2005129769A (ja) 2003-10-24 2003-10-24 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置

Publications (2)

Publication Number Publication Date
TW200515485A true TW200515485A (en) 2005-05-01
TWI364066B TWI364066B (https=) 2012-05-11

Family

ID=34643489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119079A TW200515485A (en) 2003-10-24 2004-06-29 Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor

Country Status (5)

Country Link
US (2) US7151046B2 (https=)
JP (1) JP2005129769A (https=)
KR (1) KR101151312B1 (https=)
CN (1) CN100437906C (https=)
TW (1) TW200515485A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI704596B (zh) * 2014-05-06 2020-09-11 美商應用材料股份有限公司 用於多方向裝置加工的方向處理

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
CN100362420C (zh) * 2005-07-27 2008-01-16 大连理工大学 一种利用激光退火提高掺稀土氧化铝薄膜光学特性的方法
CN101617069B (zh) 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
KR20070078132A (ko) * 2006-01-26 2007-07-31 삼성전자주식회사 실리콘 결정화 마스크, 이를 갖는 실리콘 결정화 장치 및이를 이용한 실리콘 결정화 방법
JP2007208174A (ja) * 2006-02-06 2007-08-16 Fujifilm Corp レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP2008244374A (ja) * 2007-03-29 2008-10-09 Nec Lcd Technologies Ltd 半導体薄膜の製造方法、半導体薄膜及び薄膜トランジスタ
CN101680107B (zh) 2007-04-24 2013-04-10 Limo专利管理有限及两合公司 改变半导体层结构的方法
US20090046757A1 (en) * 2007-08-16 2009-02-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) * 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US7906392B2 (en) * 2008-01-15 2011-03-15 Sandisk 3D Llc Pillar devices and methods of making thereof
JP5438986B2 (ja) 2008-02-19 2014-03-12 株式会社半導体エネルギー研究所 光電変換装置の製造方法
KR100864062B1 (ko) * 2008-02-22 2008-10-16 한국철강 주식회사 태양전지 모듈 패터닝 장치
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP2010016078A (ja) 2008-07-02 2010-01-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ及びシリコン単結晶ウェーハの製造方法並びにシリコン単結晶ウェーハの評価方法
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
JP5444053B2 (ja) * 2010-03-15 2014-03-19 株式会社日立ハイテクノロジーズ 多結晶シリコン薄膜検査方法及びその装置
JP5454911B2 (ja) * 2010-03-25 2014-03-26 株式会社日本製鋼所 アニール処理体の製造方法およびレーザアニール装置
WO2011152854A1 (en) * 2010-06-03 2011-12-08 The Trustees Of Columbia University In The City Of New York Single-scan line-scan crystallization using superimposed scanning elements
US20130089662A1 (en) * 2010-07-12 2013-04-11 Dexerials Corporation Method of producing master plate, method of producing alignment film, method of producing retardation film, and method of producing display device
KR101666661B1 (ko) * 2010-08-26 2016-10-17 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 평판 표시 장치
PT2869963T (pt) * 2012-07-04 2017-01-03 Saint Gobain Dispositivo e processo para o transformação a laser de substratos de grande superfície mediante a utilização de pelo menos duas pontes
US8937770B2 (en) 2012-07-24 2015-01-20 Coherent Gmbh Excimer laser apparatus projecting a beam with a selectively variable short-axis beam profile
CN103835000A (zh) * 2012-11-20 2014-06-04 上海华虹宏力半导体制造有限公司 一种高温改善多晶硅表面粗糙度的方法
CN103839790B (zh) * 2012-11-23 2016-09-28 中芯国际集成电路制造(上海)有限公司 激光退火装置及退火方法
US9529239B2 (en) 2013-12-31 2016-12-27 Shenzhen China Star Optoelectronics Technologies Co., Ltd. Manufacturing method and repairing method for display device as well as liquid crystal display panel
CN103995378B (zh) * 2013-12-31 2016-10-05 深圳市华星光电技术有限公司 制造显示装置的方法和修复方法以及液晶显示面板
EP2899749A1 (en) * 2014-01-24 2015-07-29 Excico France Method for forming polycrystalline silicon by laser irradiation
CN103934577B (zh) * 2014-03-12 2017-02-15 苏州福唐智能科技有限公司 切宽可调的无杂光激光加工系统
TWI577488B (zh) * 2014-11-17 2017-04-11 財團法人工業技術研究院 表面加工方法
KR102531651B1 (ko) * 2016-01-06 2023-05-11 삼성디스플레이 주식회사 레이저 결정화 장치
CN105654499B (zh) * 2016-01-27 2018-02-16 中国科学院力学研究所 一种激光表面改性的图像评价方法
CN105957023B (zh) * 2016-04-19 2018-11-23 南京工程学院 一种基于色度空间变换的激光线条纹图像增强和去噪方法
TWI637805B (zh) * 2016-10-25 2018-10-11 財團法人工業技術研究院 金屬表面之雷射加工系統及其方法
WO2018101154A1 (ja) * 2016-11-30 2018-06-07 株式会社ブイ・テクノロジー レーザ照射装置および薄膜トランジスタの製造方法
JP7265743B2 (ja) * 2018-09-18 2023-04-27 株式会社オプトピア 光源装置及びそれを用いたラインビームホモジェナイザ
JP2020107716A (ja) * 2018-12-27 2020-07-09 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置
EP3761344A1 (en) * 2019-07-05 2021-01-06 Laser Systems & Solutions of Europe System and method for spatially controlling an amount of energy delivered to a processed surface of a substrate
KR102758708B1 (ko) * 2020-05-13 2025-01-22 삼성디스플레이 주식회사 레이저 장치 및 표시 장치의 제조 방법
US12191323B2 (en) * 2020-08-14 2025-01-07 Samsung Display Co., Ltd. Display device manufacturing apparatus and method
DE102020126269B4 (de) * 2020-10-07 2024-10-31 TRUMPF Laser- und Systemtechnik SE Vorrichtung und Verfahren zum Erzeugen einer definierten Laserlinie auf einer Arbeitsebene
DE102022105342A1 (de) * 2022-03-08 2023-09-14 Trumpf Laser- Und Systemtechnik Gmbh Vorrichtung zum Erzeugen einer definierten Laserlinie auf einer Arbeitsebene
KR102783290B1 (ko) 2024-07-04 2025-03-17 정하교 대나무를 이용한 숙성 꿀의 제조방법 및 이에 의해 제조된 꿀

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6476715A (en) 1987-09-17 1989-03-22 Nec Corp Manufacture of polycrystalline semiconductor thin film
US5756364A (en) * 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
US5854803A (en) * 1995-01-12 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
EP0732221B1 (en) * 1995-03-16 1999-01-27 Minnesota Mining And Manufacturing Company Black metal thermally imageable transparency elements
TW297138B (https=) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
JP3734228B2 (ja) * 1995-07-14 2006-01-11 パイオニア株式会社 光記録媒体及びその製造方法
JP3844537B2 (ja) 1996-03-08 2006-11-15 シャープ株式会社 多結晶半導体膜の製造方法
CA2256699C (en) 1996-05-28 2003-02-25 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
JP3349355B2 (ja) 1996-08-19 2002-11-25 三洋電機株式会社 半導体膜のレーザーアニール方法
JP3337059B2 (ja) 1997-05-12 2002-10-21 カシオ計算機株式会社 半導体薄膜の結晶化方法及び薄膜トランジスタの製造方法並びにその方法に用いられるレーザアニール装置
JP4116141B2 (ja) 1998-03-26 2008-07-09 東芝松下ディスプレイテクノロジー株式会社 結晶シリコン膜の製造方法
JP2000011417A (ja) 1998-06-26 2000-01-14 Toshiba Corp 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置
JP4439630B2 (ja) * 1998-10-05 2010-03-24 株式会社半導体エネルギー研究所 シリンドリカルレンズアレイおよびビームホモジェナイザー
JP2000353664A (ja) 1999-06-11 2000-12-19 Seiko Epson Corp 半導体装置の製造方法、薄膜トランジスタの製造方法、アクティブマトリクス基板の製造方法、および電気光学装置
TW494444B (en) * 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
WO2001071791A1 (en) 2000-03-21 2001-09-27 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
TWI233098B (en) * 2000-08-31 2005-05-21 Matsushita Electric Industrial Co Ltd Data recoding medium, the manufacturing method thereof, and the record reproducing method thereof
JP3859978B2 (ja) * 2001-02-28 2006-12-20 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体材料膜に横方向に延在する結晶領域を形成する装置
JP2002299233A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体薄膜の形成方法
JP4135347B2 (ja) 2001-10-02 2008-08-20 株式会社日立製作所 ポリシリコン膜生成方法
JP3671010B2 (ja) 2002-02-18 2005-07-13 三洋電機株式会社 半導体膜のレーザーアニール方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI704596B (zh) * 2014-05-06 2020-09-11 美商應用材料股份有限公司 用於多方向裝置加工的方向處理
US10825665B2 (en) 2014-05-06 2020-11-03 Applied Materials, Inc. Directional treatment for multi-dimensional device processing

Also Published As

Publication number Publication date
US7151046B2 (en) 2006-12-19
KR101151312B1 (ko) 2012-06-08
TWI364066B (https=) 2012-05-11
KR20050039521A (ko) 2005-04-29
CN1610061A (zh) 2005-04-27
US20060254497A1 (en) 2006-11-16
CN100437906C (zh) 2008-11-26
JP2005129769A (ja) 2005-05-19
US20050139830A1 (en) 2005-06-30

Similar Documents

Publication Publication Date Title
TW200515485A (en) Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor
CN106463374B (zh) 激光加工装置及激光加工方法
CN106413974B (zh) 激光加工装置及激光加工方法
TWI513529B (zh) Laser cutting method
US20090194769A1 (en) Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
FR2849530B1 (fr) Masque pour solidification laterale sequentielle et procede de cristallisation utilisant celui ci
TW200603440A (en) Laser irradiation method and method for manufacturing semiconductor device using the same
TW200506545A (en) Mask, mask blank, and methods of producing the same
CN107427964A (zh) 使用激光图案化制造阴影掩膜的装置和使用激光图案化制造阴影掩膜的方法
CN1975567A (zh) 移相掩模
CN102063011B (zh) 激光掩膜及使用该激光掩膜的连续横向固化结晶方法
TWI546147B (zh) 用於照射半導體材料之裝置及其用途
TW200512844A (en) Method of fabricating crystalline silicon and switching device using crystalline silicon
KR100478623B1 (ko) 반도체 박막의 형성방법 및 반도체 박막의 형성장치
TWI265982B (en) Method of crystallizing silicon
JP6483271B2 (ja) 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR20110103222A (ko) 비정질 실리콘막의 결정화 방법
KR20090024087A (ko) 결정화방법
JP2006203047A (ja) 表示装置の製造方法
SG10201805165RA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
KR20230153408A (ko) 기판 제조 장치
US9958709B2 (en) Dynamic optical valve for mitigating non-uniform heating in laser processing
JP2005317938A (ja) 結晶化装置、結晶化方法、デバイス、光変調素子、及び表示装置
US7575834B2 (en) Phase shifter for laser annealing
US20080123200A1 (en) Method and device for forming poly-silicon film

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees