TW200511581A - MIS transistor and CMOS transistor - Google Patents
MIS transistor and CMOS transistorInfo
- Publication number
- TW200511581A TW200511581A TW093116779A TW93116779A TW200511581A TW 200511581 A TW200511581 A TW 200511581A TW 093116779 A TW093116779 A TW 093116779A TW 93116779 A TW93116779 A TW 93116779A TW 200511581 A TW200511581 A TW 200511581A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- protrusion
- mis
- cmos
- semiconductor substrate
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003170118A JP4723797B2 (ja) | 2003-06-13 | 2003-06-13 | Cmosトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200511581A true TW200511581A (en) | 2005-03-16 |
TWI331399B TWI331399B (en) | 2010-10-01 |
Family
ID=33549410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093116779A TWI331399B (en) | 2003-06-13 | 2004-06-11 | Cmos transistor |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060278909A1 (zh) |
EP (1) | EP1635385A4 (zh) |
JP (1) | JP4723797B2 (zh) |
KR (1) | KR100769067B1 (zh) |
CN (1) | CN1806319B (zh) |
TW (1) | TWI331399B (zh) |
WO (1) | WO2004112121A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100428476C (zh) * | 2006-07-10 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | 互补金属氧化物半导体器件 |
CN101490823B (zh) | 2006-07-13 | 2012-03-07 | 国立大学法人东北大学 | 半导体装置 |
JP5452211B2 (ja) * | 2009-12-21 | 2014-03-26 | ルネサスエレクトロニクス株式会社 | 半導体装置、および、半導体装置の製造方法 |
CN112071863A (zh) * | 2020-09-04 | 2020-12-11 | Tcl华星光电技术有限公司 | 一种阵列基板 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US655451A (en) * | 1899-11-22 | 1900-08-07 | Morgan & Wright | Valve for pneumatic tires. |
DE3780895T2 (de) * | 1986-09-24 | 1993-03-11 | Nec Corp | Komplementaerer feldeffekt-transistor mit isoliertem gate. |
JPS63228662A (ja) * | 1987-03-18 | 1988-09-22 | Toshiba Corp | 相補型mos半導体装置の製造方法 |
JPH01276669A (ja) * | 1988-04-27 | 1989-11-07 | Toshiba Corp | 半導体装置 |
JPH03155165A (ja) * | 1989-11-14 | 1991-07-03 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH05136382A (ja) * | 1991-11-08 | 1993-06-01 | Nec Corp | 相補型ゲートアレイ |
US5391506A (en) * | 1992-01-31 | 1995-02-21 | Kawasaki Steel Corporation | Manufacturing method for semiconductor devices with source/drain formed in substrate projection. |
JPH07249768A (ja) * | 1994-03-14 | 1995-09-26 | Toshiba Corp | Mis型半導体装置及びその製造方法 |
FR2720191B1 (fr) * | 1994-05-18 | 1996-10-18 | Michel Haond | Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant. |
JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
JPH0923011A (ja) * | 1995-07-05 | 1997-01-21 | Hitachi Ltd | 半導体装置及びその製造方法 |
US5932911A (en) * | 1996-12-13 | 1999-08-03 | Advanced Micro Devices, Inc. | Bar field effect transistor |
US6245615B1 (en) * | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4044276B2 (ja) | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6649480B2 (en) | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
JP4713752B2 (ja) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
JP2002359293A (ja) * | 2001-05-31 | 2002-12-13 | Toshiba Corp | 半導体装置 |
EP1278234B1 (en) * | 2001-07-19 | 2012-01-11 | STMicroelectronics Srl | MOS transistor and method of manufacturing |
US6555451B1 (en) * | 2001-09-28 | 2003-04-29 | The United States Of America As Represented By The Secretary Of The Navy | Method for making shallow diffusion junctions in semiconductors using elemental doping |
US6657259B2 (en) * | 2001-12-04 | 2003-12-02 | International Business Machines Corporation | Multiple-plane FinFET CMOS |
JP4265882B2 (ja) * | 2001-12-13 | 2009-05-20 | 忠弘 大見 | 相補型mis装置 |
US6974729B2 (en) * | 2002-07-16 | 2005-12-13 | Interuniversitair Microelektronica Centrum (Imec) | Integrated semiconductor fin device and a method for manufacturing such device |
JP2005006127A (ja) * | 2003-06-12 | 2005-01-06 | Toyota Industries Corp | ミキサ回路 |
JP2005056870A (ja) * | 2003-06-12 | 2005-03-03 | Toyota Industries Corp | ダイレクトコンバージョン受信の周波数変換回路、その半導体集積回路及びダイレクトコンバージョン受信機 |
JP2008002226A (ja) | 2006-06-26 | 2008-01-10 | Sekisui Jushi Co Ltd | フェンス |
-
2003
- 2003-06-13 JP JP2003170118A patent/JP4723797B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-11 CN CN2004800162710A patent/CN1806319B/zh not_active Expired - Fee Related
- 2004-06-11 US US10/560,706 patent/US20060278909A1/en not_active Abandoned
- 2004-06-11 TW TW093116779A patent/TWI331399B/zh not_active IP Right Cessation
- 2004-06-11 WO PCT/JP2004/008218 patent/WO2004112121A1/ja active Application Filing
- 2004-06-11 KR KR1020057023974A patent/KR100769067B1/ko not_active IP Right Cessation
- 2004-06-11 EP EP04745812A patent/EP1635385A4/en not_active Withdrawn
-
2009
- 2009-10-22 US US12/604,015 patent/US8314449B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100038722A1 (en) | 2010-02-18 |
CN1806319A (zh) | 2006-07-19 |
EP1635385A1 (en) | 2006-03-15 |
US8314449B2 (en) | 2012-11-20 |
JP2005005625A (ja) | 2005-01-06 |
EP1635385A4 (en) | 2010-09-22 |
KR20060019593A (ko) | 2006-03-03 |
CN1806319B (zh) | 2011-04-06 |
WO2004112121A1 (ja) | 2004-12-23 |
TWI331399B (en) | 2010-10-01 |
US20060278909A1 (en) | 2006-12-14 |
JP4723797B2 (ja) | 2011-07-13 |
KR100769067B1 (ko) | 2007-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |