TW200504890A - Compound semiconductor, method for producing same and compound semiconductor device - Google Patents
Compound semiconductor, method for producing same and compound semiconductor deviceInfo
- Publication number
- TW200504890A TW200504890A TW093116558A TW93116558A TW200504890A TW 200504890 A TW200504890 A TW 200504890A TW 093116558 A TW093116558 A TW 093116558A TW 93116558 A TW93116558 A TW 93116558A TW 200504890 A TW200504890 A TW 200504890A
- Authority
- TW
- Taiwan
- Prior art keywords
- buffer layer
- compound semiconductor
- layer
- ingap buffer
- ingap
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003169408 | 2003-06-13 | ||
JP2004127685 | 2004-04-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200504890A true TW200504890A (en) | 2005-02-01 |
TWI360186B TWI360186B (zh) | 2012-03-11 |
Family
ID=33554410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093116558A TW200504890A (en) | 2003-06-13 | 2004-06-09 | Compound semiconductor, method for producing same and compound semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070158684A1 (zh) |
KR (1) | KR20060026866A (zh) |
TW (1) | TW200504890A (zh) |
WO (1) | WO2004112111A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107112197A (zh) * | 2014-10-30 | 2017-08-29 | 应用材料公司 | 用于改善具有敏感层及反应层的膜堆叠物的方法与结构 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI489626B (zh) * | 2012-08-24 | 2015-06-21 | Visual Photonics Epitaxy Co Ltd | Bipolar high electron mobility transistor |
US10489424B2 (en) | 2016-09-26 | 2019-11-26 | Amazon Technologies, Inc. | Different hierarchies of resource data objects for managing system resources |
TWI640648B (zh) * | 2017-11-24 | 2018-11-11 | 行政院原子能委員會核能硏究所 | 以有機金屬化學氣相沉積法製作磷化銦鎵磊晶層的方法 |
CN110517948B (zh) * | 2019-07-26 | 2021-12-21 | 中国科学院微电子研究所 | 一种硅衬底上外延InP半导体的方法及制得的半导体器件 |
CN113314398B (zh) * | 2021-05-25 | 2024-02-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3114809B2 (ja) * | 1989-05-31 | 2000-12-04 | 富士通株式会社 | 半導体装置 |
US5492860A (en) * | 1992-04-17 | 1996-02-20 | Fujitsu Limited | Method for growing compound semiconductor layers |
JP3270945B2 (ja) * | 1992-06-04 | 2002-04-02 | 富士通株式会社 | ヘテロエピタキシャル成長方法 |
JPH07254732A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体発光装置 |
JP2000260978A (ja) * | 1999-03-04 | 2000-09-22 | Nec Corp | 電界効果トランジスタ及びその製造方法 |
JP2002217499A (ja) * | 2001-01-19 | 2002-08-02 | Sharp Corp | 半導体レーザ素子、その製造方法、およびそれを用いた光ピックアップ |
JP2002319589A (ja) * | 2001-04-20 | 2002-10-31 | Hitachi Ltd | 半導体装置およびこれを用いた電力増幅器 |
JP2002343802A (ja) * | 2001-05-16 | 2002-11-29 | Hitachi Ltd | 半導体装置およびそれを搭載した電子装置 |
-
2004
- 2004-05-24 KR KR1020057023527A patent/KR20060026866A/ko not_active Application Discontinuation
- 2004-05-24 US US10/560,160 patent/US20070158684A1/en not_active Abandoned
- 2004-05-24 WO PCT/JP2004/007413 patent/WO2004112111A1/ja active Application Filing
- 2004-06-09 TW TW093116558A patent/TW200504890A/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107112197A (zh) * | 2014-10-30 | 2017-08-29 | 应用材料公司 | 用于改善具有敏感层及反应层的膜堆叠物的方法与结构 |
Also Published As
Publication number | Publication date |
---|---|
US20070158684A1 (en) | 2007-07-12 |
WO2004112111A1 (ja) | 2004-12-23 |
KR20060026866A (ko) | 2006-03-24 |
TWI360186B (zh) | 2012-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |