TW200504812A - Semiconductor device, method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure - Google Patents

Semiconductor device, method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure

Info

Publication number
TW200504812A
TW200504812A TW093119596A TW93119596A TW200504812A TW 200504812 A TW200504812 A TW 200504812A TW 093119596 A TW093119596 A TW 093119596A TW 93119596 A TW93119596 A TW 93119596A TW 200504812 A TW200504812 A TW 200504812A
Authority
TW
Taiwan
Prior art keywords
quantum well
well structure
semiconductor device
manufacturing
dielectric constant
Prior art date
Application number
TW093119596A
Other languages
English (en)
Inventor
Youri Ponomarev
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200504812A publication Critical patent/TW200504812A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
TW093119596A 2003-07-02 2004-06-30 Semiconductor device, method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure TW200504812A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03101982 2003-07-02

Publications (1)

Publication Number Publication Date
TW200504812A true TW200504812A (en) 2005-02-01

Family

ID=33560840

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119596A TW200504812A (en) 2003-07-02 2004-06-30 Semiconductor device, method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure

Country Status (9)

Country Link
US (2) US7535015B2 (zh)
EP (1) EP1644986B1 (zh)
JP (1) JP2007521650A (zh)
KR (1) KR20060028479A (zh)
CN (1) CN1816914B (zh)
AT (1) ATE386340T1 (zh)
DE (1) DE602004011776T2 (zh)
TW (1) TW200504812A (zh)
WO (1) WO2005004241A1 (zh)

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US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
US20060011905A1 (en) * 2003-06-26 2006-01-19 Rj Mears, Llc Semiconductor device comprising a superlattice dielectric interface layer
JP2006027929A (ja) * 2004-07-13 2006-02-02 Toshiba Ceramics Co Ltd 電気光学的単結晶薄膜成長用基板及びその製造方法
US20080135832A1 (en) * 2005-01-18 2008-06-12 Shye Shapira Apparatus And Method For Control Of Tunneling In A Small-Scale Electronic Structure
US7443561B2 (en) * 2005-06-08 2008-10-28 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Deep quantum well electro-absorption modulator
US7544572B2 (en) 2005-11-30 2009-06-09 Advanced Micro Devices, Inc. Multi-operational mode transistor with multiple-channel device structure
WO2007076008A2 (en) * 2005-12-22 2007-07-05 Mears Technologies, Inc Electronic device including a poled superlattice having a net electrical dipole moment and associated methods
WO2007130973A1 (en) * 2006-05-01 2007-11-15 Mears Technologies, Inc. Semiconductor device including a dopant blocking superlattice and associated methods
WO2008041277A1 (fr) * 2006-09-29 2008-04-10 Fujitsu Limited Dispositif à semi-conducteur a base de composé et processus de fabrication correspondant
US7928425B2 (en) * 2007-01-25 2011-04-19 Mears Technologies, Inc. Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods
US8026507B2 (en) * 2008-08-20 2011-09-27 Texas Instruments Incorporated Two terminal quantum device using MOS capacitor structure
US9159565B2 (en) * 2009-08-20 2015-10-13 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with band to band tunneling and method of manufacture thereof
CN102194859B (zh) * 2010-03-05 2013-05-01 中国科学院微电子研究所 高迁移率ⅲ-ⅴ族半导体mos界面结构
US9978650B2 (en) 2013-03-13 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor channel
KR101657872B1 (ko) * 2014-12-23 2016-09-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 개선된 트랜지스터 채널을 포함하는 반도체 디바이스 및 그 제조방법
US10763349B2 (en) 2016-06-29 2020-09-01 Intel Corporation Quantum dot devices with modulation doped stacks
US11594599B2 (en) * 2016-08-10 2023-02-28 Intel Corporation Quantum dot array devices
US10056485B2 (en) * 2016-12-29 2018-08-21 Imec Vzw Semiconductor devices with gate-controlled energy filtering
US10811498B2 (en) 2018-08-30 2020-10-20 Atomera Incorporated Method for making superlattice structures with reduced defect densities
US10566191B1 (en) * 2018-08-30 2020-02-18 Atomera Incorporated Semiconductor device including superlattice structures with reduced defect densities
US20200135489A1 (en) * 2018-10-31 2020-04-30 Atomera Incorporated Method for making a semiconductor device including a superlattice having nitrogen diffused therein
KR102575699B1 (ko) 2021-10-12 2023-09-07 충북대학교 산학협력단 나노시트 반도체 소자 제조방법 및 이에 의하여 제조된 나노시트 반도체 소자

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US4665412A (en) * 1985-06-19 1987-05-12 Ga Technologies Inc. Coupled heterostructure superlattice devices
US4908678A (en) * 1986-10-08 1990-03-13 Semiconductor Energy Laboratory Co., Ltd. FET with a super lattice channel
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Also Published As

Publication number Publication date
JP2007521650A (ja) 2007-08-02
ATE386340T1 (de) 2008-03-15
CN1816914A (zh) 2006-08-09
CN1816914B (zh) 2010-12-29
DE602004011776T2 (de) 2009-02-19
KR20060028479A (ko) 2006-03-29
EP1644986B1 (en) 2008-02-13
US20090209067A1 (en) 2009-08-20
WO2005004241A1 (en) 2005-01-13
EP1644986A1 (en) 2006-04-12
DE602004011776D1 (de) 2008-03-27
US7535015B2 (en) 2009-05-19
US7951684B2 (en) 2011-05-31
US20060157685A1 (en) 2006-07-20

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