TW200500509A - Method for producing single crystal and single crystal - Google Patents

Method for producing single crystal and single crystal

Info

Publication number
TW200500509A
TW200500509A TW093112773A TW93112773A TW200500509A TW 200500509 A TW200500509 A TW 200500509A TW 093112773 A TW093112773 A TW 093112773A TW 93112773 A TW93112773 A TW 93112773A TW 200500509 A TW200500509 A TW 200500509A
Authority
TW
Taiwan
Prior art keywords
single crystal
pulling
value
defect zone
represented
Prior art date
Application number
TW093112773A
Other languages
English (en)
Chinese (zh)
Other versions
TWI352136B (enExample
Inventor
Makoto Iida
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200500509A publication Critical patent/TW200500509A/zh
Application granted granted Critical
Publication of TWI352136B publication Critical patent/TWI352136B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093112773A 2003-05-13 2004-05-06 Method for producing single crystal and single crystal TW200500509A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003135085A JP4151474B2 (ja) 2003-05-13 2003-05-13 単結晶の製造方法及び単結晶

Publications (2)

Publication Number Publication Date
TW200500509A true TW200500509A (en) 2005-01-01
TWI352136B TWI352136B (enExample) 2011-11-11

Family

ID=33447168

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112773A TW200500509A (en) 2003-05-13 2004-05-06 Method for producing single crystal and single crystal

Country Status (6)

Country Link
US (1) US7582159B2 (enExample)
EP (1) EP1624094B1 (enExample)
JP (1) JP4151474B2 (enExample)
KR (1) KR101107653B1 (enExample)
TW (1) TW200500509A (enExample)
WO (1) WO2004101868A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012171307A1 (zh) * 2011-06-15 2012-12-20 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶硅锭热场梯度改进装置

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JP4710247B2 (ja) * 2004-05-19 2011-06-29 株式会社Sumco 単結晶製造装置及び方法
JP2006069841A (ja) * 2004-09-02 2006-03-16 Sumco Corp 磁場印加式シリコン単結晶の引上げ方法
JP4513798B2 (ja) * 2006-10-24 2010-07-28 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法
JP5029184B2 (ja) * 2007-07-19 2012-09-19 日立電線株式会社 半導体結晶の製造方法及びその製造装置
JP5151628B2 (ja) * 2008-04-02 2013-02-27 信越半導体株式会社 シリコン単結晶ウエーハ、シリコン単結晶の製造方法および半導体デバイス
JP2012142455A (ja) 2010-12-29 2012-07-26 Siltronic Ag アニールウエハの製造方法
JP6107308B2 (ja) * 2013-03-28 2017-04-05 信越半導体株式会社 シリコン単結晶製造方法
TWI771007B (zh) * 2020-05-19 2022-07-11 環球晶圓股份有限公司 矽單晶錠的製造方法、矽單晶錠及其製造裝置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012171307A1 (zh) * 2011-06-15 2012-12-20 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶硅锭热场梯度改进装置

Also Published As

Publication number Publication date
WO2004101868A1 (ja) 2004-11-25
KR20060003084A (ko) 2006-01-09
KR101107653B1 (ko) 2012-01-20
EP1624094A4 (en) 2011-04-13
JP4151474B2 (ja) 2008-09-17
JP2004338979A (ja) 2004-12-02
EP1624094B1 (en) 2013-10-02
US7582159B2 (en) 2009-09-01
US20070000429A1 (en) 2007-01-04
TWI352136B (enExample) 2011-11-11
EP1624094A1 (en) 2006-02-08

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