JP4151474B2 - 単結晶の製造方法及び単結晶 - Google Patents

単結晶の製造方法及び単結晶 Download PDF

Info

Publication number
JP4151474B2
JP4151474B2 JP2003135085A JP2003135085A JP4151474B2 JP 4151474 B2 JP4151474 B2 JP 4151474B2 JP 2003135085 A JP2003135085 A JP 2003135085A JP 2003135085 A JP2003135085 A JP 2003135085A JP 4151474 B2 JP4151474 B2 JP 4151474B2
Authority
JP
Japan
Prior art keywords
single crystal
region
tmax
value
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003135085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004338979A (ja
Inventor
誠 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2003135085A priority Critical patent/JP4151474B2/ja
Priority to US10/553,754 priority patent/US7582159B2/en
Priority to EP04729524.1A priority patent/EP1624094B1/en
Priority to KR1020057021320A priority patent/KR101107653B1/ko
Priority to PCT/JP2004/006003 priority patent/WO2004101868A1/ja
Priority to TW093112773A priority patent/TW200500509A/zh
Publication of JP2004338979A publication Critical patent/JP2004338979A/ja
Application granted granted Critical
Publication of JP4151474B2 publication Critical patent/JP4151474B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2003135085A 2003-05-13 2003-05-13 単結晶の製造方法及び単結晶 Expired - Fee Related JP4151474B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003135085A JP4151474B2 (ja) 2003-05-13 2003-05-13 単結晶の製造方法及び単結晶
US10/553,754 US7582159B2 (en) 2003-05-13 2004-04-26 Method for producing a single crystal
EP04729524.1A EP1624094B1 (en) 2003-05-13 2004-04-26 Method for producing single crystal
KR1020057021320A KR101107653B1 (ko) 2003-05-13 2004-04-26 단결정의 제조방법 및 단결정
PCT/JP2004/006003 WO2004101868A1 (ja) 2003-05-13 2004-04-26 単結晶の製造方法及び単結晶
TW093112773A TW200500509A (en) 2003-05-13 2004-05-06 Method for producing single crystal and single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003135085A JP4151474B2 (ja) 2003-05-13 2003-05-13 単結晶の製造方法及び単結晶

Publications (2)

Publication Number Publication Date
JP2004338979A JP2004338979A (ja) 2004-12-02
JP4151474B2 true JP4151474B2 (ja) 2008-09-17

Family

ID=33447168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003135085A Expired - Fee Related JP4151474B2 (ja) 2003-05-13 2003-05-13 単結晶の製造方法及び単結晶

Country Status (6)

Country Link
US (1) US7582159B2 (enExample)
EP (1) EP1624094B1 (enExample)
JP (1) JP4151474B2 (enExample)
KR (1) KR101107653B1 (enExample)
TW (1) TW200500509A (enExample)
WO (1) WO2004101868A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4710247B2 (ja) * 2004-05-19 2011-06-29 株式会社Sumco 単結晶製造装置及び方法
JP2006069841A (ja) * 2004-09-02 2006-03-16 Sumco Corp 磁場印加式シリコン単結晶の引上げ方法
JP4513798B2 (ja) * 2006-10-24 2010-07-28 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法
JP5029184B2 (ja) * 2007-07-19 2012-09-19 日立電線株式会社 半導体結晶の製造方法及びその製造装置
JP5151628B2 (ja) * 2008-04-02 2013-02-27 信越半導体株式会社 シリコン単結晶ウエーハ、シリコン単結晶の製造方法および半導体デバイス
JP2012142455A (ja) 2010-12-29 2012-07-26 Siltronic Ag アニールウエハの製造方法
CN102644104A (zh) * 2011-06-15 2012-08-22 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶硅锭热场梯度改进装置
JP6107308B2 (ja) * 2013-03-28 2017-04-05 信越半導体株式会社 シリコン単結晶製造方法
TWI771007B (zh) * 2020-05-19 2022-07-11 環球晶圓股份有限公司 矽單晶錠的製造方法、矽單晶錠及其製造裝置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
US3653432A (en) * 1970-09-01 1972-04-04 Us Army Apparatus and method for unidirectionally solidifying high temperature material
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
US4108236A (en) * 1977-04-21 1978-08-22 United Technologies Corporation Floating heat insulating baffle for directional solidification apparatus utilizing liquid coolant bath
US4178986A (en) * 1978-03-31 1979-12-18 General Electric Company Furnace for directional solidification casting
US4196646A (en) * 1978-05-13 1980-04-08 Shigeyuki Mukumoto Automatic meat arranging device for automatic meat cutting machine
US4202400A (en) * 1978-09-22 1980-05-13 General Electric Company Directional solidification furnace
US4190094A (en) * 1978-10-25 1980-02-26 United Technologies Corporation Rate controlled directional solidification method
DE3107596A1 (de) * 1981-02-27 1982-10-21 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen "verfahren zur herstellung von halbleiterscheiben"
US4409451A (en) * 1981-08-31 1983-10-11 United Technologies Corporation Induction furnace having improved thermal profile
US4770704A (en) * 1987-03-13 1988-09-13 Iowa State University Research Foundation, Inc. Continuous method for manufacturing grain-oriented magnetostrictive bodies
US4840699A (en) * 1987-06-12 1989-06-20 Ghemini Technologies Gallium arsenide crystal growth
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5134261A (en) * 1990-03-30 1992-07-28 The United States Of America As Represented By The Secretary Of The Air Force Apparatus and method for controlling gradients in radio frequency heating
KR100246712B1 (ko) * 1994-06-02 2000-03-15 구마모토 마사히로 화합물 단결정의 제조방법 및 제조장치
FR2741633B1 (fr) * 1995-11-23 1997-12-19 Commissariat Energie Atomique Four de cristallisation pour materiau a faible conductivite thermique et/ou faible durete
JPH09263485A (ja) 1996-03-27 1997-10-07 Nippon Steel Corp 単結晶引き上げ制御方法、単結晶製造方法および装置
JPH10152395A (ja) * 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
US5998257A (en) * 1997-03-13 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related integrated circuitry
CN101070621B (zh) * 1997-04-09 2012-09-05 Memc电子材料有限公司 低缺陷密度、理想氧沉淀的硅
JPH10297994A (ja) * 1997-04-25 1998-11-10 Sumitomo Sitix Corp シリコン単結晶育成方法
JP3460551B2 (ja) 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
JP3747123B2 (ja) * 1997-11-21 2006-02-22 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JPH11349394A (ja) 1998-06-04 1999-12-21 Shin Etsu Handotai Co Ltd 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
JP3943717B2 (ja) * 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP2000034193A (ja) * 1998-07-16 2000-02-02 Nikon Corp フッ化物単結晶の熱処理方法及び製造方法
JP4218080B2 (ja) 1998-07-30 2009-02-04 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
US6312516B2 (en) * 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP3601324B2 (ja) * 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
US6319313B1 (en) * 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
US6673330B1 (en) * 1999-03-26 2004-01-06 National Institute For Research In Inorganic Materials Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
US6309461B1 (en) * 1999-06-07 2001-10-30 Sandia Corporation Crystal growth and annealing method and apparatus
US6276432B1 (en) * 1999-06-10 2001-08-21 Howmet Research Corporation Directional solidification method and apparatus
JP3783495B2 (ja) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ 高品質シリコン単結晶の製造方法
JP4463950B2 (ja) 2000-08-11 2010-05-19 信越半導体株式会社 シリコンウエーハの製造方法
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
US6514337B2 (en) * 2001-02-07 2003-02-04 Seh America, Inc. Method of growing large-diameter dislocation-free<110> crystalline ingots
JP2003002785A (ja) * 2001-06-15 2003-01-08 Shin Etsu Handotai Co Ltd 表層部にボイド無欠陥層を有する直径３００ｍｍ以上のシリコン単結晶ウエーハおよびその製造方法
US6624390B1 (en) * 2001-07-20 2003-09-23 Cape Simulations, Inc. Substantially-uniform-temperature annealing
JP2003204048A (ja) * 2002-01-09 2003-07-18 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
US20030234092A1 (en) * 2002-06-20 2003-12-25 Brinegar John R. Directional solidification method and apparatus

Also Published As

Publication number Publication date
WO2004101868A1 (ja) 2004-11-25
KR20060003084A (ko) 2006-01-09
KR101107653B1 (ko) 2012-01-20
EP1624094A4 (en) 2011-04-13
JP2004338979A (ja) 2004-12-02
EP1624094B1 (en) 2013-10-02
TW200500509A (en) 2005-01-01
US7582159B2 (en) 2009-09-01
US20070000429A1 (en) 2007-01-04
TWI352136B (enExample) 2011-11-11
EP1624094A1 (en) 2006-02-08

Similar Documents

Publication Publication Date Title
CN114318500A (zh) 一种用于拉制单晶硅棒的拉晶炉、方法及单晶硅棒
KR101048831B1 (ko) 단결정 제조용 흑연 히터 및 단결정 제조장치와 단결정 제조방법
US7384477B2 (en) Method for producing a single crystal and a single crystal
JP4151474B2 (ja) 単結晶の製造方法及び単結晶
US7226507B2 (en) Method for producing single crystal and single crystal
US7323048B2 (en) Method for producing a single crystal and a single crystal
JP4457584B2 (ja) 単結晶の製造方法及び単結晶
JP4207577B2 (ja) Ｐドープシリコン単結晶の製造方法
JP4496723B2 (ja) 単結晶の製造方法及び単結晶製造装置
JP4134800B2 (ja) 単結晶製造用黒鉛ヒーター及び単結晶製造装置ならびに単結晶製造方法
JP2005015290A (ja) 単結晶の製造方法及び単結晶
JP4218460B2 (ja) 単結晶製造用黒鉛ヒーター及び単結晶製造装置ならびに単結晶製造方法
JP4148060B2 (ja) 単結晶製造用黒鉛ヒーター及び単結晶製造装置ならびに単結晶製造方法
JP4360208B2 (ja) シリコン単結晶の製造方法
JP4148059B2 (ja) 単結晶製造用黒鉛ヒーター及び単結晶製造装置ならびに単結晶製造方法
JPH11199383A (ja) 結晶育成方法
JP4881539B2 (ja) 単結晶の製造方法及び単結晶
KR100827033B1 (ko) 무결함 단결정 제조 방법 및 이 방법에 의해 제조된 단결정
JP2005015298A (ja) 単結晶の製造方法及び単結晶
JP2005015288A (ja) 単結晶の製造方法及び単結晶

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080318

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080430

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080610

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080623

R150 Certificate of patent or registration of utility model

Ref document number: 4151474

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110711

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110711

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120711

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120711

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130711

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees