TW200423177A - Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process - Google Patents

Abstract

An inorganic particle-containing composition comprising: (A) inorganic particles; (B) a binder resin; and (C) a compound represented by the following formula (I), wherein R1 represents a group represented by -CO-A, wherein A represents an alkyl group having 5-20 carbon atoms or an alchemy group having 5-20 carbon atoms, and n is an integer of 2-20. A transfer film and a plasma display panel production process using the composition are also described.

Description

200423177 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a composition containing inorganic particles, a transfer film containing the composition, and a method for manufacturing a plasma display panel. [Prior art] In recent years, plasma displays have attracted much attention as flat-panel fluorescent displays. Fig. 1 is a schematic diagram showing a cross-sectional shape of an AC plasma display panel (hereinafter referred to as "P D P" for simplicity). In the figure, 1 and 2 indicate glass substrates facing each other, and 3 indicates barrier ribs. The unit (c e 1 1) is separated and formed by a glass substrate 1, a glass substrate 2 and a barrier rib 3. 4 is a transparent electrode fixed to the glass substrate 1; 5 is a bus electrode formed on the transparent electrode 4 for reducing the resistance of the transparent electrode; 6 is an addressing electrode fixed to the glass substrate 2; 7 is a fluorescent material held inside the unit; 8 indicates a dielectric layer formed on the surface of the glass substrate 1 and thus covers the transparent electrode 4 and the bus electrode 5; 9 indicates a dielectric layer formed on the surface of the glass substrate 2 and thus covers the address electrode 6; and 10 indicates, for example, magnesium oxide Made of protective film. In color PDP, in order to obtain a high contrast image, a color filter (red, green or blue) or a black matrix can be placed between the glass substrate and the dielectric layer. As for the method of manufacturing such a PDP dielectric material, barrier rib, electrode, fluorescent material, color filter or black stripe (black matrix), a lithography method is suitable, which involves forming a photosensitive resin layer containing inorganic particles on On the substrate, the film is irradiated with ultraviolet light through a photomask, and the obtained film is developed to retain a pattern on the substrate to dry the pattern. The aforementioned lithography method has excellent pattern accuracy in theory, especially using a transfer film, which can be formed with excellent thickness uniformity and surface uniformity 5 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 Sentence pattern. However, a thin film-forming material layer formed by coating a composition containing an inorganic resin-containing inorganic particle on a base film does not have sufficient flexibility and the transfer ability is insufficient. In order to solve these problems, studies have been made to include plasticizers, dispersants, and the like in the film-forming material layer. However, these inorganic materials may remain in the pattern after being dried to cause coloring or the like. In particular, when a sintered glass material such as a dielectric layer is formed, there is a problem that the transmittance of the obtained sintered glass material is liable to decrease. Under the foregoing circumstances, the present invention has been completed. [Summary of the Invention] A first object of the present invention is to provide a composition containing inorganic particles, which is suitable for providing a PDP component having excellent surface flatness (such as a barrier rib, an electrode, a resistor, a dielectric layer, a phosphor, Color filters and black matrix). A second object of the present invention is to provide a composition containing inorganic particles, which can form a sintered glass material having a high light transmittance (for example, a dielectric layer constituting a PDP). A third object of the present invention is to provide a composition containing inorganic particles that can produce a transfer film having excellent flexibility in terms of a thin film-forming material layer. A fourth object of the present invention is to provide a composition containing inorganic particles, which is capable of producing a film-forming material layer having excellent transferability (heat-bonded to a substrate). A fifth object of the present invention is to provide a transfer film which can effectively form a constituent element of a PDP having excellent surface flatness. A sixth object of the present invention is to provide an inorganic particle-containing composition 6 312 / Inventive Supplement) / 93-05 / 93103730 200423177, which has excellent flexibility in terms of a thin film-forming material layer. A seventh object of the present invention is to provide a composition containing inorganic particles, which has excellent transferability (heat-bonded to a substrate) in terms of a thin film-forming material layer. An eighth object of the present invention is to provide a method for manufacturing a PDP, which can effectively make a component of a PDP having excellent surface flatness. A ninth object of the present invention is to provide a PDP manufacturing method which can efficiently form a PDP having a high positional accuracy in terms of constituent elements. A tenth object of the present invention is to provide a PDP manufacturing method which can effectively form a dielectric layer having a large thickness. An eleventh object of the present invention is to provide a P D P manufacturing method which can effectively form a large-sized panel. Dielectric layer. A twelfth object of the present invention is to provide a method for manufacturing a PDP having a dielectric layer with excellent thickness uniformity. A thirteenth object of the present invention is to provide a method for manufacturing P D P, which has a dielectric layer with excellent surface flatness. The composition containing inorganic particles of the present invention includes (A) inorganic particles; (B) a binder resin; and (C) a compound represented by the following formula (I) (this compound is hereinafter referred to as a "specific compound" ):

OH

I WCK-CHtrCH-CHi-O-VH (I) where R1 represents a group represented by -C0-A, where A represents an alkyl group containing 5-20 carbon atoms or an alkenyl group containing 5-20 carbon atoms , And |] _ is an integer from 2-2 0. The composition containing the inorganic particles of the present invention may be a composition. Further, 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 Step into a film-like package to obtain a printing material layer body bun film film light-blocking moment includes (D) — a radiation-sensitive component (this composition is hereinafter referred to as a radiation-sensitive composition containing inorganic particles "). The transfer film of the present invention includes a thin film-forming material layer obtained through the inorganic particle-containing substance. The first manufacturing method of the present invention (hereinafter referred to as "the PDP manufacturing method includes transferring a generated material layer obtained from the composition containing an inorganic particle according to the present invention to a substrate surface, and drying the transferred film material layer And a step of forming a dielectric layer on the substrate. The second manufacturing method of the present invention (hereinafter referred to as "the PDP manufacturing method includes the following steps: transferring the layer of the thin film-generating material of the composition containing inorganic particles of the present invention To the substrate surface; on the thin film generating material layer after forming the photoresist film; exposing the photoresist film to form a latent image of light; developing the photoresist film to form a photoresist pattern; etching the thin film raw material layer to form a photoresist A patterned layer of a pattern; and baked to form a constituent element selected from the group consisting of a barrier rib, an electrode, a resistor, a dielectric layer, a color filter, and a black matrix. The third manufacturing method (after It is referred to as "PDP manufacturing method including the following steps: forming a photoresist film and a film-forming material layer containing a composition obtained without the invention on a base film; transferring the formation Laminate a film on the base film to the surface of the substrate; expose the photoresist film of the laminate film to form a latent image of the photoresist pattern; develop it to form a photoresist pattern; etch a film-forming material layer to form a resist pattern pattern layer ; And drying the pattern layer to form a constituent element in a rib selection, an electrode, a resistor, a dielectric layer, a phosphor, and a color filter array. 312 / Invention Specification (Supplement) / 93-05 / 93103730 as a group (1) j) Thin film generation (2) ”) Light-filled transflective pattern in the building (3)”) The photoresist of the machine-layered layered light group should be self-resistance and black 8 200423177 The fourth manufacturing of the present invention Method (hereinafter referred to as "PDP manufacturing method (4)") includes the following steps: transferring a thin film-generating material layer obtained from the composition containing an inorganic particle according to the present invention to a substrate surface; exposing the thin film-generating property Material layer to form a pattern latent image; developing the thin film-generating material layer to form a pattern layer; and drying the pattern layer to form a member selected from barrier ribs, electrodes, resistors, dielectric layers, phosphors, and color filters And in the black matrix Of its constituent elements. [Embodiment] The composition containing inorganic particles (hereinafter referred to as "composition") of the present invention will be described in detail later. The composition of the present invention contains inorganic particles, a binder resin, and a specific compound as main components. (Inorganic Particles) There is no particular limitation on the composition of the inorganic material that constitutes the inorganic particles of the composition of the invention. Instead, it is selected based on the application of the sintered material formed by the composition (P D P component type). The inorganic particles contained in the composition are used to form a "dielectric layer" or "barrier rib" constituting the PDP. Such inorganic particles have, for example, a softening point falling to 3 50-7 0 0 ° C, and preferably 40 Glass frit in the range of 0-6 2 0 ° C. When the softening point of the glass frit is lower than 350 ° C, the glass frit is melted in a stage where organic substances such as a binder resin have not been completely decomposed during the baking step of the film-forming material layer made of the composition And it is removed, so part of the organic substance remains in the dielectric layer to be formed. As a result, the dielectric layer is easily colored, and its transmittance is easily reduced. Conversely, when the softening point of the glass powder exceeds 700 ° C, the glass substrate is easy to be baked because the glass powder must be baked at a temperature higher than 700 ° C. 9 312 / Invention Specification (Supplement) / 93- 05/93103730 200423177 Twisted. Specific examples of suitable glass powder include (1) a mixture of lead oxide, boron oxide and silicon oxide (P b 0-B 2 0 3-S i 0 2), (2) a mixture of zinc oxide, boron oxide and silicon oxide ( Z η 0-B '2 0 3-S i 0 2), (3) a mixture of lead oxide, boron oxide, stone oxide and oxide is (PbO_B2〇3-Si〇2-Al2〇3)' and (4 ) A mixture of lead oxide, zinc oxide, boron oxide, and silicon oxide (P b 0 -Z η 0 -B 2 0 3 -Si〇2). The glass frit may be contained in a composition for forming constituent elements (such as electrodes, resistors, phosphors, color filters, and black matrices) other than the dielectric layer and the barrier ribs. The content of the glass frit in the composition containing inorganic particles used to obtain the panel material is usually 90% by weight or less based on the total weight of the inorganic particles, and preferably 50-90% by weight. The inorganic particles contained in the composition used to form the "electrode" constituting the PDP are, for example, metal particles such as Ag, Au, Al, Ni, Ag-Pd alloy, Cu, Cr and the like. These metal particles can be combined with a glass frit and contained in a composition forming a dielectric layer. The content of the glass particles in the dielectric layer-forming composition, based on the total weight of the inorganic particles, is usually 10% by weight or less, and preferably 0.1 to 5% by weight. The inorganic particles contained in the "resistor" forming composition constituting the PDP are, for example, particles containing RuCh or the like. The inorganic particles contained in the "phosphor" generating composition constituting the PDP are, for example, particles containing red fluorescent material (for example, Y 2 0 3: EU 3 +, Y 2 S i 0 5: E u 3 —, Y: 3 A 15 0 12: E u 3 +, YV 0 4: E u 3 +, (Y, G d) B 0 3: E u 3 + and Z η 3 (P 0 ί) 2 ·· Μ η), including Particles of green fluorescent material (e.g. Z η 2 S i 0Μ η, 10 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177

BaAli2〇i9: Mn, BaMgAlH〇23: Mn, LaP〇4: (Ce, Tb) and Y 3 (A 1, G a) 50 m T b), containing blue fluorescent material particles (such as Y 2 S i 0 5: Ce, BaMgAliOOi7: Eu2 +, BaMgAlH02: Eu2 +, (Ca, Sr, Ba) i0 (PCh) 6Cl2: Eu2 +, and (Zn, Cd) S: Ag) and the like. The inorganic particles contained in the composition for forming the "color filter" of the PDP include, for example, red materials (such as F e 2 0 3 and P b 3 0 4), green materials (such as C r 2 0 3), and blue Materials (such as 2 (A 12 N a 2 S i 3 0 丨.) · N a 2 S 4). The inorganic particles contained in the composition for forming the "black matrix" of the PDP are, for example, particles containing M η, F e, and C r. (Binder resin) The binder resin constituting the composition of the present invention is preferably an acrylic resin. When acrylic acid resin is contained as the binder resin, the resulting thin film-forming material layer has excellent (thermal) adhesion to the substrate. Thus, when the composition of the present invention is applied to a base film to produce a transfer film, the obtained transfer film has excellent transfer ability (heat-adhesiveness to a substrate) in terms of a film-forming material layer. The acrylic resin that composes the composition of the invention is selected from the group consisting of materials with appropriate adhesiveness, which can adhere inorganic particles, and can be completely oxidized and removed by baking film-forming materials (baking at 4 0-6 2 Ot) (commonly )polymer. Acrylic acid includes a homopolymer of a (fluorenyl) acrylic compound represented by the following general formula (II), a copolymer of two or more (meth) acrylic compounds represented by the following general formula (II), and the following general formula ( II) is a copolymer of a (meth) acrylic compound and a copolymerizable monomer. H2OC-R2

I C = 0 (II)

I ο

I h2c-r3 11 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 wherein R2 represents a hydrogen atom or a methyl group; and R3 represents a monovalent organic group. Specific examples of the (meth) acrylic compound represented by the general formula (II) include: alkyl (fluorenyl) acrylates such as (meth) acrylate, (meth) acrylate, and (meth) acrylate , Isopropyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tertiary butyl (meth) acrylate, pentyl (meth) acrylate ), Amyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, (Methyl) isooctyl acrylate, (Methyl) 2-ethylhexyl acrylate, (Methyl) nonyl acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, (fluorenyl) Undecyl acrylate, dodecyl (meth) acrylate, lauryl (meth) acrylate, stearyl (meth) acrylate and isostearyl (meth) acrylate; hydroxyalkyl (fluorenyl) Acrylates such as hydroxyethyl (meth) acrylate, ( 2-hydroxypropyl acrylate, 3-hydroxypropyl (fluorenyl) acrylate, 2-hydroxybutyl (meth) acrylate; 3-hydroxybutyl (meth) acrylate and 4-hydroxy acrylate Butyl ester. Phenoxyalkyl (meth) acrylates such as phenoxyethyl (meth) acrylate and 2-hydroxy-3-phenoxypropyl (meth) acrylate; alkoxyalkyl (methyl) Examples of acrylates are 2-methoxyethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate, 2-propoxyethyl (meth) acrylate, 2- (meth) acrylate Butoxyethyl and 2-fluorenyl butyl (fluorenyl) acrylate; Polyalkanediol (fluorenyl) acrylates such as polyethylene glycol mono (meth) acrylate, ethoxy diethylene glycol (Meth) acrylates' methoxypolyethylenediene 12 312 / Inventory (Supplement) / 93-05 / 93103730 200423177 Alcohol (fluorenyl) acrylate, phenoxypolyethylene glycol (fluorenyl) propenyl Phenoxypolyethylene glycol (meth) acrylate, polypropylene glycol (1 ester, methoxy polypropylene glycol (fluorenyl) acrylate, ethoxy (meth) acrylate, and nonylphenoxy polypropylene glycol ( Fluorenyl) propylene cycloalkyl (meth) acrylates such as (meth) acrylic cyclo (meth) acrylate 4-butylcyclohexyl, (fluorenyl Acrylic dicyclo group) dicyclopentenyl acrylate, (fluorenyl) dicyclopentyl acrylate :) group) bornyl acrylate, (fluorenyl) isobornyl acrylate, and (a; tricyclodecyl); and (fluorenyl) ) Acrylic acid acrylate and (fluorenyl) tetrahydrofurfuryl acrylate. Among them, the (fluorenyl) acrylate compound represented by the general formula (II) preferably represents a group containing an alkyl group or an oxyalkylene group. Particularly preferred is olefin. The ester compounds are butyl (meth) acrylate, (meth) acrylic acid, lauryl (fluorenyl) acrylate, and 2-ethoxyethyl acrylate (decyl) isodecyl acrylate. Other copolymerizable monomers There is no particular limitation, as long as it is a compound that can be copolymerized with an enoate compound. Other copolymerizable polymers include unsaturated weilic acids such as (meth) acrylic acid, vinyl benzoic acid, acids, and vinyl benzene difluorene. Acids; and vinyl-containing polymerizable groups, such as vinyl undecyl ether, vinyl glycidyl ether, α-methylstyrene, butadiene, and isoprene. The acrylic resin is derived from the general formula (曱) The proportion of the comonomer of the acrylic compound is usually equal to or more, and preferably 90% by weight or more. Specific examples of the preferred acrylic resin include polymethyl methacrylate 312 / Invention Specification (Supplement) / 93- 05/93103730 acid esters, non 3yl) propylene polypropylene glycol esters; hexane, pentyl acetate, (methyl ester, (methyl k) acrylic acid, of which R3 (fluorenyl) ethyl propionate and (fluorenyl) ( Methyl) propylene monomers include cis-butene di-combined acetophenone, (Table 70% by weight, polyfluorenyl 13 200423177 butyl acrylate and methyl methacrylate-butyl methacrylate copolymer. When forming a PDP constituent element by a photoresist method described later, when the thin film-forming material layer must be alkali-soluble for etching, it is preferable to include a carboxyl group-containing monomer as the aforementioned other copolymerizable monomer (comonomer). . Specific examples of carboxyl-containing monomers include acrylic acid, methacrylic acid, maleic acid, fumaric acid, crotonic acid, itaconic acid, citraconic acid, mesaconic acid, cinnamic acid, mono (2- (methyl ) Acrylic fluorenyloxyethyl) succinate and ω-carboxy-polycaprolactone mono (fluorenyl) acrylate. Among them, fluorenyl acrylic acid is particularly preferred. Specific examples of preferred alkali-soluble resins include: alkyl fluorenyl acrylates such as fluorenyl acrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, Isobutyl methacrylate, tertiary butyl methacrylate, pentyl methacrylate, amyl methacrylate, isoamyl methacrylate, methacrylic acid Hexyl, heptyl methacrylate, octyl methacrylate, isooctyl methacrylate, 2-ethylhexyl methacrylate, nonyl methacrylate, decyl methacrylate, isodecyl methacrylate Undecyl methacrylate, dodecyl methacrylate, lauryl methacrylate, stearyl methacrylate and isostearyl methacrylate; hydroxyalkyl methacrylates such as methacrylic acid Hydroxyethyl ester, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate; 3-hydroxybutyl methacrylate and 4-hydroxybutyl methacrylate. Phenoxyalkyl methacrylates such as phenoxyethyl fluorenyl acrylate and 2-hydroxyphenoxypropyl methacrylate; 14 312 / Description of the Invention (Supplement) / 93-05 / 93103730 200423177 Alkoxy Alkyl methacrylates such as 2-methoxyethyl methacrylate, 2-ethoxyethyl methacrylate, 2-propoxyethyl methacrylate, 2-butoxy methacrylate Ethyl and 2-methoxybutyl acrylate; polyalkylene glycol methacrylates such as polyethylene glycol monomethacrylate, ethoxy diethylene glycol methacrylate, fluorenyl polyacrylate Ethylene glycol methacrylate, phenoxypolyethylene glycol methacrylate, nonylphenoxy polyethylene glycol methacrylate, polypropylene glycol methacrylate, methoxy polypropylene glycol methacrylate Ethoxy polypropylene glycol methacrylate and nonylphenoxy polypropylene glycol methacrylate; cycloalkylfluorenyl acrylates such as cyclohexyl methacrylate, 4-butylcyclohexyl methacrylate, methyl Dicyclopentyl acrylate, dicyclopentenyl acrylate, fluorenyl acrylate Cyclopentadiene methacrylate, bornyl methacrylate, isobornyl methacrylate and tricyclo decyl acrylate; and benzyl methacrylate, and tetrahydrofurfuryl acrylate Yue group. The molecular weight of the acrylic resin constituting the composition of the present invention is expressed by weight average molecular weight reduced to polystyrene by gel permeation chromatography (hereinafter referred to as "GPC"), preferably 4, 000-300, 000. And more preferably 1 0, 0 0 0-2 0 0, 0 0 0 (this molecular weight is hereinafter referred to as "weight average molecular weight"). The proportion of the binder resin of the composition of the present invention is preferably 5 to 80 parts by weight and more preferably 10 to 50 parts by weight per 100 parts by weight of the inorganic particles. When the proportion of the binder resin is too small, the binder resin cannot accurately bind and retain inorganic particles. Conversely, when the proportion is too large, the baking step takes a long time, and the formed sintered material (such as a dielectric layer) does not have sufficient strength or thickness. (Specific compound) 15 312 / Invention specification (Supplement) / 93-05 / 93103730 200423177 The specific compound is used as an additive having the dual effects of a plasticizer and a dispersant. The composition of the present invention containing a specific compound shows excellent surface flatness. Even when the obtained transfer film is bent, the surface of the film-forming material layer can be finely cracked, and the transfer film has excellent flexibility and is easily rolled up. In addition, because specific compounds are not easily decomposed and removed by heat, the panel material obtained by baking the thin film-forming material layer will not be colored, and the transmittance of the dielectric layer will not decrease. In formula (I) representing a specific compound, R1 represents a group represented by -C0-A, where A represents a pit group containing 5-20 broken atoms or a dilute group containing 5-20 broken atoms, and |] _ is an integer of 2_20 . The alkyl or alkenyl group represented by A contains 5 to 20 carbon atoms and preferably 9 to 18 carbon atoms. When the number of carbon atoms is less than 5, the function as an additive becomes insufficient. When the number of carbon atoms exceeds 20, the solubility in the additive solvent constituting the composition containing the inorganic particles decreases, and good flexibility cannot be obtained. Specific examples of alkyl include n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-pentadecyl, n-hexadecyl Base, n-seven-single-base, n-seven-single-base, n-seven-single-base and n-stilbene-based. Specific examples of alkenyl include 2-pentenyl, 2-hexenyl, 2-heptenyl, 2-octyl, 2-decyl, 10-undecyl, 9-octadecyl And 9-octadecyl. Among them, n-octyl, n-dodecyl, n-octadecyl and 9-octadecenyl are preferred, and 9-h octadecyl is particularly preferred. R1 in formula (I) represents a group represented by -CO-A; and l is an integer of 2-2 0. 16 312 / Instruction of the Invention (Supplement) / 93-05 / 93103730 200423177 Specific examples of specific compounds include diglyceryl monolaurate, diglycerol monostearate, diglycerol monooleate, and diglycerol monocaprylate. . Among them, diglycerol monooleate is particularly preferred. The ratio of the specific compound to the composition of the present invention is preferably from 0.1 to 20 parts by weight, and more preferably from 0.5 to 10 parts by weight, per 1,000 parts by weight of the inorganic particles. When the ratio of the specific compound is too small, the surface flatness and flexibility of the thin film-forming material layer formed using the obtained composition cannot be sufficiently improved. Conversely, when the ratio is too high, the adhesiveness (adhesiveness) of the thin film-generating material layer formed using the obtained composition becomes too high, so the handling properties of the transfer film including the thin film-generating material layer are poor. (Radiation-sensitive component) The composition containing an inorganic particle of the present invention may be a radiation-sensitive composition containing an inorganic particle. Preferred radiation-sensitive components include, for example, (a) a combination of a polyfunctional monomer and a radiation polymerization initiator; and (b) a combination of a melamine resin and a photoacid generator that generates an acid when irradiated with radiation. As for the combination (a), a combination of a polyfunctional (meth) acrylate and a radiation polymerization initiator is particularly preferable. Specific examples of polyfunctional (fluorenyl) acrylates that make up radiation-sensitive components include di (meth) acrylates of alkanediols (such as ethylene glycol and propylene glycol); polyalkanediols (such as polyethylene glycol and polypropylene glycol) Bis (meth) acrylates; two hydroxyl-terminated polymers (such as two-terminal hydroxyl polybutadiene, two-terminal hydroxyl polyisoprene, and two-terminal hydroxyl polycaprolactone) (Meth) acrylates; polyhydric alcohols with a valence of 3 or more (such as glycerol, 1,2,4-butanetriol, trimethylolane, tetramethylolane, pentaerythritol, and dipentaerythritol) (Fluorenyl) acrylates; cyclic polyols (such as 1,4-cyclohexanediol and 17 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 1,4-benzenediol cyclic polyol ); And oligo (meth) acrylates such as polyester (fluorenyl) acrylate, epoxy resin (fluorenyl) acrylate, amino phosphonate resin (fluorenyl) acrylate, alkyd resin (fluorenyl) Acrylate, polysiloxane (fluorenyl) acrylate and spiral hydrocarbon resin (spiranr e s i η) (meth) acrylate. These polyfunctional (meth) acrylates can be used alone or in combination of two or more. Specific examples of the radiation polymerization initiator constituting the radiation-sensitive component include carbonyl compounds such as biphenylhydrazone, benzoin, benzophenone, camphorquinone, 2-hydroxy-2-methyl_1-phenylpropan-1-3 iso, 1 _Cyclohexylphenylmethyl-8, 2,2-dimethoxy-2-phenylacetophenone, 2-methyl- [4 '-(fluorenylthio) phenyl] -2-morphine Isopropyl S and 2_octyl_2 ~~ Diamidoaminomorphinylphenyl) _Butan-1-one; Aromatic compounds or azide compounds such as azoisobutyronitrile and 4-azide Benzene; organic sulfur compounds such as mercaptan disulfide; organic peroxides such as benzamidine peroxide, di-third butyl peroxide, third butyl hydroperoxide, cumene hydroperoxide, and p-methane Hydrogen peroxide; trihalomethanes such as 1,3-pyrene (trichlorofluorenyl) -5-(2'-chlorophenyl) -1,3,5-Sanken and 2- [2- (2-furan Group) ethylenyl] -4,6-pyrene (trifluoromethyl) -1,3,5-trio and imidazole binary such as 2,2'-pyrene (2-chlorophenyl) -4,5 , 4 ', 5'-tetraphenyl-1,2, -biimidazole. These radiation polymerization initiators may be used alone or in combination of two or more. (Solvent) The composition of the present invention usually contains a solvent. The preferred solvent is a solvent that has good affinity for inorganic particles and good solubility for the binder resin, can provide appropriate viscosity to the obtained composition, and is easy to vaporize and remove when dried. Specific examples of solvents include ketones such as diethylfluorenone, methyl butyl ketone dipropane 18 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 methyl ketone and cyclohexanone; alcohols such as n-pentanol, 4 -fluorenyl-2 -pentyl alcohol, cyclic and diacetone alcohol; ether-based alcohols such as ethylene glycol monomethyl ether, ethylene diethylene bond, ethylene glycol monobutyl bond, propylene glycol monofluorene and propylene glycol monoethyl alcohol Bonded saturated aliphatic monocarboxylic acid alkyl esters such as n-butyl acetate and pentyl acetate esters such as ethyl lactate and n-butyl lactate; and ether-based esters such as fluorenyl acetate lysinolysin, ethyl acetate Fibrinolysin, propylene glycol acetate, and ethyl 3-ethoxypropionate. These solvents may be used alone or in combination of two or more. The proportion of the solvent in the composition of the present invention is preferably from 5 to 30 parts by weight based on 100 parts by weight of the inorganic particles per 100 parts by weight of the inorganic particles from the viewpoint of maintaining the viscosity of the composition in the range. In addition to the aforementioned main components, the composition of the present invention may contain various agents as optional ingredients. Such additives are, for example, a tackifier, a surface control agent, a stabilizer, and an antifoaming agent. A composition for forming a dielectric layer as a composition containing inorganic particles. A preferred embodiment includes, for example, a composition including 100 parts by weight of the mixture and 50 to 80% by weight of lead oxide and 5-weight. Specific boron oxide, 0-20% by weight zinc oxide, 0-10% by weight oxygen, and 0 _ 1 0% by weight silicon oxide as inorganic particles (glass powder); 10-30 parts by weight of butyl acrylate Ester / Methyl Acrylic 2-Ethyl :! Ester / Hydroxypropyl Methacrylate Copolymer as Binder Resin; 0 · 1-10 parts by weight than diglycerol oleate as specific compounds; 5-30 parts by weight Propylene glycol monomethyl ether and / or ethyl 3-ethoxypropionate were used as solvents. The composition of the present invention can be prepared by using a kneader such as a roller kneader, mixing 312 / Invention Specification (Supplement) / 93-05 / 93103730 hexanol alcohol one; no; milk examples [ether, seed or preferably 40. Mouth Tension Example 3 0% Aluminium Alcohol and Ester Mixer 19 200423177 or homomixer, prepared by kneading the aforementioned inorganic particles, binder resins, specific aliased solvents and optional ingredients. The composition of the present invention thus prepared is a fluid paste composition suitable for coating, and generally has a viscosity of 1,000 to 30,000 cp and 3,000 to 10,000 cp. The composition of the present invention may be particularly advantageous. It is used to make transfer film (this transfer E transfer film), which will be described in detail later. The composition of the present invention is also preferably used for a conventional method for forming a thin film-forming material, in other words, a method for directly coating the composition on a substrate surface by a screen printing method and drying the coating film to form a thin film-forming material. (Transfer Film) The transfer film of the present invention is a composite film which can be advantageously used in the steps of manufacturing a component element, particularly in the step of manufacturing a dielectric layer, by applying a composition on a base film and drying the coating. Film to form a thin film layer. In other words, the transfer film of the present invention is formed from a base film with a film-forming material layer formed thereon, and contains inorganic particles, a binder resin, and a compound. The transfer film of the present invention can be a thin film (stacked body), which is prepared by coating the composition of the present invention on a photoresist film after forming a resist film on a base film, and drying the coated film. In addition, the transfer film of the present invention can be a radiation-sensitive transfer film composed of a radiation-sensitive inorganic composition. (1) Structure of transfer film:

Figure 2 A is a schematic cross-section of a rolled transfer film of the present invention I 312 / Invention Specification (Supplement) / 93-05 / 93103730, the best, the first layer is thinly set with PDP material The light and dry particles 20 200423177 and FIG. 2B are sectional views (detailed views of part (X)) showing the structure layer of the transfer film. The transfer film shown in Fig. 2 is a composite film which can be used to form a dielectric layer composed of P D P as an example of the transfer film of the present invention. Generally, the composition of the transfer film is a base film F 1; a thin film-forming material layer F 2, which is formed on the surface of the base film F 1 and can be peeled off; and a cover film F 3. The thin film-forming material layer F 2 is easily peeled off on the surface. The cover film 薄膜 3 may not be used depending on the properties of the thin film generating material layer F2. The base film F1 constituting the transfer film is preferably a resin film having heat resistance, solvent resistance, and flexibility. When the base film F 1 is flexible, the paste-like composition (the composition of the present invention) can be applied using a roll coater, a blade coater, or the like, so that a film-forming material layer having a uniform thickness can be formed, and the formed The thin film-forming material layer is stored and supplied in a roll form. The resin constituting the base film F 1 includes, for example, polyethylene terephthalate, polyesters, polyethylene, polypropylene, polystyrene, polyimide, polyvinyl alcohol, polyvinyl chloride, and fluorine-containing resins. Such as polyvinyl fluoride, nylon and cellulose. The thickness of the base film F 1 is, for example, 20 to 100 μm. The thin film generating material layer F 2 constituting the transfer film is a layer (dielectric layer) that becomes a frit glass material when baked, and contains glass powder (inorganic particles), a binder resin, and a specific compound as main components. The thickness of the thin film-generating material layer F 2 is determined according to the glass frit content and the type and size of the panel, but it is usually 5 to 200 micrometers and preferably 10 to 100 micrometers. When the thickness is less than 5 micrometers, the thickness of the resulting dielectric layer becomes too small, and the specified dielectric characteristics cannot be ensured. Generally, when the thickness is 10 to 100 microns, the required dielectric layer thickness of a large-size panel can be sufficiently ensured. 21 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 degrees. The cover film F 3 constituting the transfer film is a protective film of the thin film generating material layer F 2 (a contact surface with the glass substrate). This cover film F 3 is preferably a resin film. The resin that forms the cover film F 3 is, for example, the resin of the aforementioned formation group>. The thickness of the cover film F 3 is, for example, 20 to 100 μm. (2) Manufacturing method of the transfer film: The manufacturing method of the transfer film of the present invention can be formed by forming a thin film raw material layer (F 2) on the base film (F 1) and providing (pressure bonding) a cover: It is prepared on a thin film generating material layer (F 2). A method for forming a thin film-generating material layer is, for example, a method of coating the base film containing inorganic particles, a binder resin, a specific compound, and a solvent, and drying the coating film to remove a part or the whole. From the point that the thickness becomes large (for example, 20 microns or more) and can be effective; from the viewpoint of a coating film with excellent uniform thickness, the method of coating the composition film of the present invention preferably includes, for example, a coating method using a roll coater, A coating method using a coater such as a doctor blade, a coating method using a curtain coater, and a coating method using a coater. The surface of the base film coated with the composition of the present invention is preferably subjected to a release treatment. After the film-forming material layer is transferred in this manner, the base film-capacitive film-forming material layer is torn off. The coating film formed by the composition of the present invention on the base film is dried or completely solvent, and converted into a film forming material constituting the transfer film. The conditions for drying the coating film made of the composition of the present invention include 40- Temperature and at about 1-30 minutes. 312 / Invention Specification (Supplement) / 93-05 / 93103730 shows flexible night film F1 on the surface of the substrate, and a flexible material film (F 3), which is a component of the invention. It is easier to remove the material layer by thinning using a thread system. 1 50 ° C and 22 200423177 on the film-forming material layer show an appropriate shape retention, the residual solvent ratio after drying (solvent-to-film-forming material layer content) is usually 10% by weight or less, and is preferred It is from 0.1 to 5% by weight. The surface of the cover film, which is preferably provided on the film-generating material layer (usually, pressure-bonded by heating), is also subjected to a release treatment. Before the film-forming material layer is transferred, the cover film is easily peeled off from the film-forming material layer. (3) Transfer of the thin film generating material layer (use of the transfer film) The thin film generating material layer on the base film is transferred onto the entire surface of the substrate. According to the transfer film of the present invention, the thin film-forming material layer can be accurately formed on the glass substrate by such a simple operation. In this way, not only can the steps of forming the P D P component elements (such as the dielectric layer) be improved (improving the efficiency), but also the quality of the generated component elements (such as the dielectric layer showing stable dielectric characteristics) can be improved. PDP Manufacturing Method (1) (Formation of Dielectric Layer) The PDP manufacturing method (1) of the present invention includes the following steps: transferring a film-forming material layer constituting the transfer film of the present invention to a substrate surface, and drying the transferred A thin film of a material layer is formed to form a dielectric layer on the surface of the substrate. The procedure of transferring a thin film-forming material layer having a transfer film having the composition shown in Fig. 2 is as follows. (1) The transfer film in the form of a roll is cut to correspond to the area size of the substrate. (2) After the cover film (F 3) is peeled off from the surface of the film-forming material layer (F 2) of the transfer film obtained by cutting, the transfer film is spread on the surface of the substrate to allow the film-forming material layer (F 2) The surface contacts the substrate. (3) The heating roller is moved over the transfer film spread on the substrate, and the transfer film is heated and pressed to bond the transfer film. 23 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 (4) The base film (F 1) is peeled off, and the film-forming material layer (F 2) fixed to the substrate by heating and pressure bonding is removed from the substrate Film (F 1). The thin film generating material layer (F 2) on the base film (F 1) is transferred to the substrate by the aforementioned operation. The transfer conditions include a surface temperature of the heating roller of 60 to 120 ° C, a heating roller pressure of 1 to 5 kg / cm2, and a moving speed of the heating roller of 0.2 to 10.0 m / min. This operation (transfer step) can be performed using a laminator. The substrate is preheated, and the preheating temperature is set to, for example, 4 0-100 ° C. The thin film generating material layer (F 2) transferred to the substrate surface is converted into a sintered inorganic material (dielectric layer) by baking. The baking method is, for example, a method in which a substrate on which the film-forming material layer (F 2) has been transferred is placed in a high-temperature atmosphere. In this way, the organic materials (such as the binder resin, residual solvents, specific compounds, and various additives) contained in the thin film-forming material layer (F 2) are decomposed and removed, and the inorganic particles are melted and sintered. The sintering temperature varies depending on the melting point of the substrate, the constituent elements of the thin film-forming material layer, etc., but the sintering temperature is, for example, 3 0-8 0 ° C, and preferably 4 0-6 2 0. (:. PDP manufacturing method (2) (using a photoresist method to form a component) The PDP manufacturing method (2) of the present invention includes the following steps: transferring a thin film-generating material layer constituting the transfer film of the present invention to a substrate; forming light The photoresist film is on the film-forming material layer after the transfer; the photoresist film is exposed to form a latent image of the photoresist pattern; the photoresist film is developed to form the photoresist pattern; A patterned pattern layer; and drying the patterned layer to form a constituent element selected from the group consisting of a barrier rib, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, and a black matrix. In addition, the manufacturing method of the present invention ( 2) Including the following steps: forming a photoresist film and a film-forming property of the composition obtained from the present invention containing inorganic particles 24 312 / Invention (Supplement) / 93-05 / 93103730 200423177 Material layer on a base film Laminated film; transfer the laminated film formed on the base film to the substrate surface; expose the photoresist film constituting the laminated film to form a latent image of the photoresist pattern; develop the photoresist film to form the photoresist pattern; Forming a patterning layer corresponding to the photoresist pattern by forming a layer of a material; and drying the pattern layer to form a pattern selected from the group consisting of a rib, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, and a black matrix A method of forming a "barrier rib" as a PDP component on the back of the substrate will be described later. This method includes (1) a step of transferring a thin film generating material layer, and (2) a step of forming a photoresist film. (3) a step of exposing the photoresist film, (4) a step of developing the photoresist film, (5) a step of engraving the film-forming material layer, and (6) a step of drying the barrier rib pattern, thereby forming a barrier rib on the surface of the substrate. Fig. 3 and Fig. 4 are schematic cross-sectional views each showing a series of steps for generating the barrier ribs. In Fig. 3 and Fig. 4, 11 denotes a glass substrate, and the plasma is aligned at regular intervals on the glass substrate to generate a plasma, and the dielectric layer 1 3 is formed on the surface of the glass substrate 11 so as to cover the substrate 12. In the present invention, specific examples of the "transfer film-forming material layer to the substrate" include not only the specific transfer of the film-forming material layer to the surface of the glass substrate 1 1 Examples include specific examples of transferring the film-forming material layer to the surface of the dielectric layer 13. (1) Steps of transferring the film-forming material layer: Examples of the steps of transferring the film-forming material layer are shown below. As shown in FIG. 3B, after the cover film (not shown) of the transfer film is peeled off, the transfer film 20 is laid on the surface of the dielectric layer 13 so that the surface of the thin film generating material layer 2 1 is in contact with the dielectric. The surface of the layer 1 3, the transfer film 20 is bonded by heating and pressure by a heating roller, etc., and the base film 2 2 is then torn off and a film-forming material layer 25 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 2 1. As shown in FIG. 3C, the thin film generating material layer 21 is transferred and tightly adhered to the surface of the dielectric layer 13. The transfer conditions include a surface temperature of the heating roller of 80 to 140 ° C, a pressure of the heating roller of 1 to 5 kg / cm2, and a moving speed of the heating roller of 0.1 to 1.0 m / min. The glass substrate 11 can be preheated, and the preheating temperature can be set to, for example, 40-100 ° C. (2) Step of forming photoresist film: In this step, as shown in FIG. 3D, a photoresist film 31 is formed on the surface of the transferred film-forming material layer 21. The photoresist constituting the photoresist film 31 can be any of a positive type photoresistor and a negative type photoresistor. The photoresist film 31 can be formed by applying photoresist by various methods including screen printing method, roll coating method, spin coating method and cast coating method, and drying the coating film. The drying temperature of the coating film is usually about 60-130 ° C. The photoresist film formed on the base film can be formed by being transferred to the surface of the thin film generating material layer 21. According to this formation method, not only the number of steps of forming the photoresist film can be reduced, but also the obtained photoresist has excellent thickness uniformity. In this way, the development of the photoresist film and the #engraving of the thin film generating material layer can be performed uniformly, so the height and shape of the generated barrier ribs become uniform. The photoresist film 31 is usually 0.1 to 40 micrometers thick and preferably 0.5 to 20 micrometers. (3) Photoresist film exposure step In this step, as shown in FIG. 3E, the surface of the photoresist film 3 1 formed on the thin film generating material layer 2 1 passes through the exposure cover M and is selectively irradiated with radiation such as ultraviolet light ( Exposure) to form a latent image of the photoresist pattern. In this figure, Μ Α and Μ B respectively indicate a light transmitting portion and a light shielding portion formed by the exposure cover M. There is no special limitation on the ultraviolet light irradiation device, but it can be an ultraviolet light irradiation device used for lithography, and used for the manufacture of semiconductors and liquid crystal display devices. · (Supplement) / 93-05 / 93103730 200423177 Exposure device. When a photoresist film is formed by transfer, the exposure step is preferably performed in a state where the base film covering the photoresist film is not torn off. (4) Photoresist film development step In this step, the exposed photoresist film is developed to form a photoresist pattern (latent image). About the developing conditions, the type of the developing solution, the formulation and concentration, the developing time, the developing temperature, the developing method (such as the immersion method, the swing method, the spray method, the spray method and the agitation method), the developing device, etc. may be based on the photoresist film. 3 The categories such as 1 are appropriately selected. A photoresist pattern 3 5 (corresponding to the pattern of the exposure mask M) composed of the photoresist remaining portion 3 5 A and the photoresist removal portion 3 5 B is formed by this developing step, as shown in FIG. 4F. This photoresist pattern 35 is used as an etching cover in the subsequent step (etching step). The remaining material of the photoresist pattern 3 5 (light-curing photoresist) must have a composition in the etching solution more than that of the thin film generating material layer 21 Low dissolution rate. (5) Step of etching the thin film generating material layer: In this step, the thin film generating material layer is etched to form a barrier rib pattern layer corresponding to the photoresist pattern. In other words, as shown in Fig. 4G, a portion of the photoresist removing portion 3 5 B corresponding to the photoresist material 35 of the thin film generating material layer 21 is dissolved in the etching solution and selectively removed. FIG. 4G shows a state during etching. When the etching is continued further, as shown in FIG. 4 (a), a predetermined portion of the thin film-generating material layer 21 is completely removed, so that the dielectric layer 13 is exposed. In this way, a barrier rib pattern layer 25 composed of the remaining portion 2 5 A of the material layer and the removal portion 2 5 B of the material layer 27 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 is formed. Regarding the etching conditions, the type of the etching solution, the preparation and concentration, the processing time, the processing temperature, the processing method (such as the immersion method, the rocking method, the spray method, the spray method, and the scouring method), and the processing device can be determined according to the film formation properties The type of the material layer 21 is appropriately selected. Photoresist film 3 1 type and thin film generating material layer 2 1 type are selected so that the same solution of the developing solution used in the developing step is used as the etching solution, so the developing step and the etching step can be continuously performed, and the manufacturing steps can be reduced. And improve manufacturing efficiency. The remaining part 3 5 A of the photoresist pattern 35, which is preferably composed, is gradually dissolved by etching, and is completely removed when the barrier rib pattern layer 25 is formed (when the etching is completed). Even if the remaining part or all of the photoresist remaining part 3 5 A after the etching, the photoresist remaining part 3 5 A is removed in the subsequent baking step. (6) Drying step of the barrier rib pattern layer: In this step, the barrier rib system is formed by baking the barrier rib pattern layer 25. In this way, the organic matter in the remaining portion of the material layer 2 5 A is burned off to form barrier ribs. As shown in FIG. 4I, in the panel material 50 having the barrier rib 40 formed on the surface of the dielectric layer 13 and the space formed by the barrier rib 40 (the barrier rib derived from the material layer removal portion 2 5 B) Department as a plasma working space. The baking temperature must be the temperature at which the remaining 25 A of organic material in the material layer is burned out, and is usually 4 0-6 0 ° C. Baking time is usually 10-90 minutes. P D P production method (3) (a preferred specific example using a photoresist method) The P D P production method (3) of the present invention is not limited to the method shown in FIG. 3 and FIG. 4. The other preferred method for forming the P D P constituent element (P D P manufacturing method (3)) is, for example, 28 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177, which includes the following steps (1) to (3). (1) After the photoresist film is formed on the base film, the composition containing the inorganic particles of the present invention is coated on the photoresist film, and dried and laminated to form a film-forming material layer. When forming a photoresist film and a thin film-forming material layer, a roll coater or the like can be used, so that a laminated film having an excellent uniform thickness can be formed on the base film. (2) A laminated film composed of a photoresist film and a thin film generating material layer on a base film is transferred to a substrate. The transfer conditions are the same as those described in the above "Film-forming material layer transfer step". (3) Perform the same operations described in the "photoresist film exposure step", "photoresist film development step", "thin film-forming material layer etching step", and "barrier rib pattern layer baking step" described above. During these operations, as described above, the developing solution of the preferred photoresist film is the same as the etching solution of the thin film generating material layer, and the "photoresist film developing step" and the "film generating material layer 4 worming step" are continuously performed. . According to the aforementioned method, since the thin film generating material layer and the photoresist film are transferred to the entire substrate, the manufacturing efficiency can be further improved by simplifying the steps. PDP manufacturing method (4) (forming a component using a radiation-sensitive transfer film) The PDP manufacturing method (4) of the present invention includes the following steps: transferring a film-forming material layer constituting the radiation-sensitive transfer film of the present invention to a substrate; Exposing the thin film-generating material layer to form a pattern latent image; developing the thin film-generating material layer to form a pattern layer; and drying the pattern layer to form a layer selected from barrier ribs, electrodes, resistors, dielectric layers, and phosphors , The color filter and the components in the black matrix. In this method, taking the method of forming barrier ribs as an example, after the aforementioned "Thin Film Generation 29 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 Step of Transferring Material Layers", the pattern layer is based on the "Barrier Film It is formed under the conditions of "exposure step" and "photoresist film development step". Subsequently, the barrier ribs are formed on the surface of the substrate by a "barrier rib pattern baking step". The method of forming the "barrier rib" as a component of the P D P has been explained in the individual steps of the P D P manufacturing method (1) to (4). According to this method, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices that individually constitute a PDP can be formed. The details of the present invention will be described with reference to the following examples, but it should be understood that the present invention is by no means limited thereto. In Examples and Comparative Examples, all "parts" are "parts by weight ratio". (Examples) (1) Preparation of glass paste composition (composition containing inorganic particles) The composition of the present invention having a viscosity of 3,400 cp (measured by a B-type viscosity meter at 30 rpm) was prepared by the following method: Use a dispersing mixer to knead 100 parts of a mixture mainly composed of P b 0-B2 03-S i 02 (softening point 50 0 ° C) (its composition contains 70% by weight lead oxide, 10% by weight Boron oxide and 20% by weight silica), 15 parts of fluorenyl butyl acrylate / 2-ethylhexyl methacrylate / fluorenyl hydroxypropyl acrylate copolymer (weight ratio: 3 0/6 0/1 0 , Weight-average molecular weight: 150,000, 0) as a binder resin, 5 parts of diglyceryl oleate as a specific compound, 8.7 parts of propylene glycol monomethyl ether as a solvent, and 1 3.1 parts of 3-ethoxy Prepared with ethyl propionate. (2) Manufacture and evaluation of transfer film (flexibility and handling properties): The composition of the present invention prepared as above (1) is made by coating with polyethylene terephthalate (PET) using a doctor blade coater And coating 30 312 / invention supplementary film formed on the base film (width: 400 mm, length: 30 m, thickness: 38 micron) previously subjected to release treatment / 93-05 / 93103730 200423177 film Dry at 80 ° C for 5 minutes to remove the solvent. In this way, a 50 micron-thick film-forming material layer was formed on the base film. A cover film (width: 400 mm, length: 30 m, thickness: 3 8 micrometers) previously subjected to a release treatment is manufactured on a thin film-generating material layer to produce the transfer film of the present invention. Structure. The resulting transfer film is flexible and easy to wind up. In addition, even if it is bent, the bend will not cause cracks and cracks on the surface of the film-forming material layer), and the film-forming material layer has excellent flexibility . The cover film is peeled off by the transfer film, and the transfer film (a laminate composed of a base film and a thin film material layer) is laid on the glass substrate without applying pressure, so that the surface of the generative material layer contacts the surface of the glass substrate. The transfer film is then torn off from the substrate surface. As a result, the film-forming material layer showed proper adhesion to the glass substrate, and the transfer film could be peeled off without causing the film-forming material to be agglomerated and broken. Therefore, the transfer film has good handling properties. (3) Transfer of the thin film-generating material layer After the cover film is torn off from the transfer film obtained in (2) above, the laminate of the transfer® base film and the thin film-generating material layer is spread on 2 1 mouths On a glass substrate, the surface of the film-forming material layer should be in contact with the glass base surface (fixed surface of the bus electrode). The conditions of heating and pressing under heating and heating are used. The conditions include the surface temperature of the heating roller, 90 ° C, and the roller pressure. 2 thousand square centimeters and heating roller moving speed of 0,6 m / min. After the pressure-bonding is completed under heating, the base film is torn off and fixed to the thin film-generating material layer on the surface of the glass substrate by a thermal bonding method. This completes the transfer of the thin film-generating material layer. In this transfer step, when the base film is peeled off, it will not cause thin film 312 / Invention Manual (Supplement) / 93-05 / 93103730 long PET i) Figure 2 Printed film "bent " raw thin film glass plate" The material layer U is 0 g / from the panel surface: (plus •, due to the cohesive failure of the material layer 31 200423177, the film strength is high enough. In addition, the film-forming material layer after the transfer is on the surface of the glass substrate Good adhesion. (4) Drying of the thin film-generating material layer (generation of the dielectric layer): The glass substrate on which the thin film-generating material layer has been transferred as described above (3) is placed in a kiln, The internal temperature of the high kiln is roasted to 6 2 0 ° C, and a non-coloring transparent dielectric layer made of sintered glass material is formed on the surface of the glass substrate. The thickness (average thickness and tolerance) of the dielectric layer was measured and found The range is 30 micron ± 0.4 micron. In this way, the dielectric layer has excellent thickness uniformity. The surface of the obtained dielectric layer uses a non-contact thickness gauge (N Η-3, manufactured by Ryokosha). ) Accept three-dimensional measurement, 俾 according to JIS standard (B 0 6 0 1) Surface roughness (R a, R y, R z). As a result, the dielectric layer has R a = 0 · 0 8 micrometers, R y = 0 · 5 6 micrometers and R z = 0.2 8 micrometers, so it has absolute In addition, the transmittance of the dielectric layer (measurement wavelength: 5500 nm) was measured and found to be 93%. This confirmed that the dielectric layer had good transparency. (Comparative Example) Implementation Example A composition having a viscosity of 3,000 cp (measured at 30 rpm using a B-type viscometer) was prepared in the same manner, but the ratio of the binder resin was changed to 17 parts, and 4 parts of azelaic acid-di -2-Ethylhexyl ester instead of the specific compound. Using the resulting composition, the transfer film was manufactured and evaluated in the same manner as in the examples. As a result, the transfer film has excellent flexibility and handling and properties. The dielectric layer was manufactured in the same manner, and the surface roughness (Ra, Ry, Rz) was measured. As a result, the dielectric layer had Ra = 0 · 6 5 microns, R y = 2.5 1 microns, and R z = 1. 7 3 micron, so the surface flatness is inferior. 32 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 The composition of the present invention can obtain the following effects (1) Suitable for forming PDP constituent elements (such as barrier ribs, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices) with excellent surface flatness. (2) Suitable for high-transmittance formation Sintered glass frit with a light ratio (such as a dielectric layer or a barrier rib constituting a PDP). (3) A transfer film having excellent flexibility in terms of a thin film generating material layer can be manufactured. (4) A transfer film having excellent transfer ability (heat-bonded to a substrate) in terms of a thin film-forming material layer can be manufactured. The transfer film of the present invention can obtain the following advantages. (1) A component (particularly a dielectric layer) having excellent P D P surface flatness can be effectively formed. (2) The film-forming material layer is excellent in flexibility, and the surface of the film-forming material layer does not include bending cracks (cracks). (3) Excellent softness and easy to take up. (4) As far as the thin film generating material layer is concerned, the adhesiveness is appropriate and the controllability is good. (5) The film-forming material layer is excellent in transferability (heat-bonded to a substrate). The production method of the present invention can achieve the following effects. (1) Effectively form P D P constituent elements (such as barrier ribs, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices) with excellent surface flatness. (2) It can effectively form a PDP with the height position accuracy of constituent elements. (3) A dielectric layer having a large thickness can be effectively formed. 33 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 (4) The dielectric layer required for large-size panels can be effectively formed. (5) P D P can be effectively formed and is provided with a dielectric layer having excellent thickness uniformity and surface flatness. [Brief description of the drawings] FIG. 1 is a schematic diagram showing a cross-sectional shape of an AC plasma display panel. FIG. 2A is a schematic sectional view showing a transfer film of the present invention; and FIG. 2B is a sectional view showing a layered composition of the transfer film. 3A to 3E are schematic cross-sectional views showing steps (a transfer step, a photoresist film forming step, and an exposure step) for forming a barrier rib in the manufacturing method of the present invention. 4 to 4 are schematic cross-sectional views showing steps (development step, etching step, and baking step) for forming barrier ribs in the manufacturing method of the present invention. (Description of element symbols) 1 glass substrate 2 glass substrate 3 barrier rib 4 transparent electrode 5 bus electrode 6 address electrode 7 fluorescent material '8 dielectric layer 9 dielectric layer 10 protective layer 11 glass substrate 12 electrode 13 dielectric layer 34 312 / Inventory (Supplement) / 93-05 / 93103730 200423177 20 Transfer film 21 Thin film generating material layer 22 Base film 25 Barrier rib pattern layer 25A Material layer remaining portion 25B Material layer removing portion 31 Photoresist film 35 Photoresist Pattern 35A photoresist remaining part 35B photoresist removal part 40 barrier rib 50 panel material F1 base film F2 thin film generating material layer F3 cover film M exposure cover MA light transmitting part MB light blocking part 35 312 / Instruction Manual (Supplement) / 93 -05/93103730

Claims (1)

200423177 Scope of patent application: 1. A composition containing inorganic particles, comprising: (A) inorganic particles; (B)-a binder resin; and (C) a compound represented by the following formula (I): OH I r ^ CK-CHb-CH-CHb-O-VH (I) wherein R1 represents a group represented by -C0_A, wherein A represents an alkyl group containing 5-20 carbon atoms or an alkenyl group containing 5-20 carbon atoms, and 〇_ is an integer of 2 _ 2 0. 2. If the composition containing inorganic particles in item 1 of the scope of patent application, further contains (D)-radiation-sensitive ingredients. 3. A transfer film comprising a thin film-forming material layer obtained from a composition containing inorganic particles as described in the first patent application. 4. A transfer film comprising a thin film-forming material layer obtained from a composition containing inorganic particles as described in item 2 of the patent application. 5-A transfer film comprising a laminate of a photoresist film and a thin film-forming material layer, the thin film-forming material layer being obtained from a composition containing inorganic particles as described in item 1 of the scope of patent application. 6 · A method for manufacturing a plasma display panel, the method includes the following steps: transferring a thin film-generating material layer obtained from a composition containing inorganic particles as described in item 1 of the patent application to a substrate surface, and baking The transferred film-forming material layer forms a dielectric layer on the substrate. 7 · A method for manufacturing a plasma display panel, the method includes the following steps: transferring the composition containing inorganic particles as described in the first item of the patent application 36 312 / Invention Specification (Supplement) / 93-05 / 93103730 200423177 The obtained film-forming material layer is transferred to the substrate surface; a photoresist film is formed on the film-forming material layer after the transfer; the photoresist film is exposed to form a latent image of the photoresist pattern; the photoresist film is developed and formed Photoresist pattern; etching a thin film generating material layer to form a pattern layer corresponding to the photoresist pattern; and baking the pattern layer to form a kind selected from barrier ribs, electrodes, resistors, dielectric layers, phosphors, and color filters And the black matrix components. 8. A method for manufacturing a plasma display panel, the method includes the following steps: transferring a thin film-generating material layer of a composition obtained from a composition containing inorganic particles as described in item 1 of the patent application on a base film Laminated film; transfer the laminated film formed on the base film to the surface of the substrate; expose the photoresist film constituting the laminated film to form a latent image of the photoresist pattern; develop the photoresist film to form the photoresist pattern; etch film Generating a material layer to form a pattern layer corresponding to the photoresist pattern; and drying the pattern layer to form a material selected from the group consisting of a barrier rib, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, and a black matrix Component elements. 9. A method for manufacturing a plasma display panel, the method comprising the steps of: transferring a thin film-generating material layer obtained from a composition containing an inorganic particle as in item 2 of the patent application onto a substrate surface; exposing the thin film Generate a latent image by forming a material layer; develop the pattern layer by forming the thin film material layer; and dry the pattern layer to form a layer selected from barrier ribs, electrodes, resistors, dielectric layers, phosphors, and color filters Components in light sheet and black matrix. 37 312 / Invention Specification (Supplement) / 93-05 / 93103730