TWI248425B - Inorganic particle-containing composition for plasma display panel, transfer film, and plasma display panel production process - Google Patents

Inorganic particle-containing composition for plasma display panel, transfer film, and plasma display panel production process Download PDF

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Publication number
TWI248425B
TWI248425B TW093110493A TW93110493A TWI248425B TW I248425 B TWI248425 B TW I248425B TW 093110493 A TW093110493 A TW 093110493A TW 93110493 A TW93110493 A TW 93110493A TW I248425 B TWI248425 B TW I248425B
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TW
Taiwan
Prior art keywords
film
material layer
forming material
composition
photoresist
Prior art date
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TW093110493A
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Chinese (zh)
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TW200502188A (en
Inventor
Seiji Kawagishi
Takanori Yamashita
Katsumi Itoh
Yasutake Inoue
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Jsr Corp
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Publication of TWI248425B publication Critical patent/TWI248425B/en

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H01J11/34—Vessels, containers or parts thereof, e.g. substrates
    • H01J11/44—Optical arrangements or shielding arrangements, e.g. filters, black matrices, light reflecting means or electromagnetic shielding means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
    • H01J2211/20—Constructional details
    • H01J2211/22—Electrodes
    • H01J2211/225—Material of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
    • H01J2211/20—Constructional details
    • H01J2211/34—Vessels, containers or parts thereof, e.g. substrates
    • H01J2211/36—Spacers, barriers, ribs, partitions or the like

Abstract

An inorganic particle-containing composition for plasma display panel, a transfer film using the composition, and a plasma display panel production process. The composition contains (A) inorganic particles, and (B) a polymer having a repeating unit represented by the formula (I). The composition may further contain a plasticizer and/or a silane-coupling agent. The composition provides a transfer film having various excellent properties. The plasma display panel production process can efficiently form constituent elements having various excellent properties in a baking step at low temperature for a short period of time. The production process includes, for example, steps of transferring a film-forming material layer obtained from the composition on a base film, and baking the transferred film-forming material layer to form a dielectric layer on the base film.

Description

1248425 玖、發明說明： 【發明所屬之技術領域】 本發明係關於電漿顯示面板用之含有無機粒子之組成 物、轉印膜及電漿顯示面板之製造方法。 【先前技術】 近年，平板狀螢光顯示體的電漿顯示器備受矚目。圖1 所示係交流型電漿顯示面板（以下稱「P D P」）的剖面形狀模 型圖。同圖中，1與2係相對向S己置的玻璃基板，3係分隔 壁，利用玻璃基板1、玻璃基板2及分隔壁3劃分形成單 元（c e 1 1 )。4係固定於玻璃基板1上的透明電極，5係在降 低透明電極4電阻之目的下，形成於透明電極4上的匯流 電極，6係固定於玻璃基板2上的位址電極，7係保持於單 元内的螢光物質，8係在玻璃基板1表面上形成覆蓋著透 明電極4與匯流電極5狀態的介電質層，9係在玻璃基板2 表面上形成覆蓋著位址電極6狀態的介電質層，1 0係由如 氧化鎂所構成的保護膜。此外，在彩色PDP方面，為獲得 高對比影像，便有在玻璃基板與介電質層之間，設置彩色 濾光片（紅色、綠色、或藍色）、黑矩陣等。 此種PDP介電質、分隔壁、電極、螢光體、彩色濾光片、 及黑條紋（矩陣）之製造方法，適合採取在基板上形成含感 光性無機粒子之樹脂層，藉由對此膜隔著光罩照射紫外線 而顯影，使基板上殘留著圖案，然後再對其進行燒成的光 微影法等。 上述光微影法在原理上乃屬圖案精度優越，特別在採用 6 312/發明說明書(補件)/93-07/93110493 1248425 轉印膜的方法中，可形成膜厚均勻性與表面均句性均優越 的圖案。但是，在燒成膜形成材料層的步驟中，若未設定 為高溫且長時間的燒成條件，且充分地執行膜形成材料層 熔融的話，膜形成材料層將容易發生龜裂，而設定高溫中 長時間的燒成條件，對燒成爐將形成頗大負擔，並將造成 生產性降低的問題。故，期待膜形成材料層的低溫、短時 間内之燒成步驟。 【發明内容】 本發明乃有鑑於上述情事而所構思。 本發明之第1目的在於提供一種可在低溫、短時間的燒 成步驟中，適當地形成表面平滑性優越之P D P構成要件（如 分隔壁、電極、電阻體、介電質層、螢光體、彩色濾光片、 或黑矩陣）的含有無機粒子之組成物。 本發明之第2目的在於提供一種能製造出膜形成材料層 可撓性優越之轉印膜的含有無機粒子之組成物。 本發明之第3目的在於提供一種能製造出膜形成材料層 轉印性（對基板的加熱密接性）優越之轉印膜的含有無機粒 子之組成物。 本發明之第4目的在於提供一種可在低溫及短時間的燒 成步驟中，有效率地形成表面平滑性優越的PDP構成要件 之轉印膜。 本發明之第5目的在於提供一種膜形成材料層可撓性優 越的轉印膜。 本發明之第6目的在於提供一種膜形成材料層轉印性 7 312/發明說明書(補件)/93-07/93110493 1248425 (對基板的加熱密接性）優越的轉印膜。 本發明之第7目的在於提供一種可在低 成步驟中，有效率地形成表面平滑性優越 的PDP之製造方法。 本發明之第8目的在於提供一種可在低 成步驟中，有效率地形成構成要件之高位 PDP之製造方法。 本發明之第9目的在於提供一種可在低 成步驟中，有效率地形成膜厚較大之介電 造方法。 本發明之第1 0目的在於提供一種可在4 燒成步驟中，有效率地形成大型面板所要 PDP之製造方法。 本發明之第1 1目的在於提供一種可在4 燒成步驟中，具有膜厚均句性優越之介電 造方法。 本發明之第1 2目的在於提供一種可在{ 燒成步驟中，具有表面平滑性優越之介電 造方法。 本發明之含有無機粒子之組成物，其特 無機粒子，以及[B]含有具下述式（1)所示 體（以下稱「聚合體[B - 1 ]」）的黏結樹脂。 子對黏結樹脂的吸附，且在燒成時縮短無 離，因此認為可在低溫、短時間内進行燒 312/發明說明書(補件)/93-07/93110493 溫及短時間的燒 之PDP構成要件 溫及短時間的燒 置精度之PDP的 溫及短時間的燒 質層的PDP之製 &溫及短時間的 求之介電質層的 i溫及短時間的 質層的PDP之製 k溫及短時間的 質層的PDP之製 徵在於包含有[A ] 重複單位之聚合 藉此增強無機粒 機粒子間的距 成0 8[Technical Field] The present invention relates to a composition containing inorganic particles for a plasma display panel, a transfer film, and a method for producing a plasma display panel. [Prior Art] In recent years, plasma display panels of flat fluorescent displays have attracted attention. Figure 1 shows a cross-sectional shape of an AC plasma display panel (hereinafter referred to as "P D P"). In the same figure, 1 and 2 are glass substrates which are opposed to each other, and 3 are partition walls, and the glass substrate 1, the glass substrate 2, and the partition wall 3 are divided into a unit (c e 1 1 ). 4 is a transparent electrode fixed on the glass substrate 1, 5 is a bus electrode formed on the transparent electrode 4 for the purpose of reducing the resistance of the transparent electrode 4, and 6 is fixed to the address electrode on the glass substrate 2, and 7 is held. In the phosphor material in the cell, 8 is formed on the surface of the glass substrate 1 to form a dielectric layer covering the transparent electrode 4 and the bus electrode 5, and 9 is formed on the surface of the glass substrate 2 to cover the state of the address electrode 6. The dielectric layer, 10 is a protective film made of, for example, magnesium oxide. Further, in the case of a color PDP, in order to obtain a high contrast image, a color filter (red, green, or blue), a black matrix, or the like is provided between the glass substrate and the dielectric layer. Such a PDP dielectric, a partition wall, an electrode, a phosphor, a color filter, and a black stripe (matrix) are preferably formed by forming a resin layer containing photosensitive inorganic particles on a substrate. The film is developed by irradiating ultraviolet rays through a mask, and a pattern is left on the substrate, and then a photolithography method of baking the film is performed. The above-mentioned photolithography method is superior in pattern precision in principle, and in particular, in the method of using the transfer film of 6 312/invention specification (supplement)/93-07/93110493 1248425, film thickness uniformity and surface uniformity can be formed. A pattern that is superior in character. However, in the step of firing the film-forming material layer, if the firing condition is not set to a high temperature and for a long period of time, and the film forming material layer is sufficiently melted, the film forming material layer is likely to be cracked, and the high temperature is set. The medium-long firing condition imposes a considerable burden on the firing furnace and causes a problem of reduced productivity. Therefore, the baking step of the film forming material layer at a low temperature and in a short time is expected. SUMMARY OF THE INVENTION The present invention has been conceived in view of the above circumstances. A first object of the present invention is to provide a PDP component (e.g., a partition wall, an electrode, a resistor, a dielectric layer, a phosphor) which is excellent in surface smoothness in a low-temperature, short-time firing step. A composition containing inorganic particles, a color filter, or a black matrix. A second object of the present invention is to provide a composition containing inorganic particles capable of producing a transfer film having a film forming material layer which is excellent in flexibility. A third object of the present invention is to provide a composition containing inorganic particles which is capable of producing a transfer film having excellent transfer property (heat adhesion to a substrate). A fourth object of the present invention is to provide a transfer film which can efficiently form a PDP constituent element having excellent surface smoothness in a low-temperature and short-time baking step. A fifth object of the present invention is to provide a transfer film which is excellent in flexibility of a film forming material layer. A sixth object of the present invention is to provide a transfer film having a superior film forming material layer transfer property 7 312 / invention specification (supplement) / 93-07/93110493 1248425 (heating adhesion to a substrate). A seventh object of the present invention is to provide a method for producing a PDP which is excellent in surface smoothness in a low-step forming step. An eighth object of the present invention is to provide a manufacturing method capable of efficiently forming a high-order PDP constituting a component in a low-step process. A ninth object of the present invention is to provide a dielectric method capable of efficiently forming a film thickness in a low-step process. A tenth object of the present invention is to provide a method for producing a PDP which can efficiently form a large panel in the four firing step. A first object of the present invention is to provide a dielectric method which is excellent in film thickness uniformity in the four firing step. A second object of the present invention is to provide a dielectric method which is excellent in surface smoothness in the {baking step. The inorganic particle-containing composition of the present invention, the specific inorganic particles, and [B] contain a binder resin having a body represented by the following formula (1) (hereinafter referred to as "polymer [B-1]"). The adsorption of the binder resin on the binder is shortened during firing, so it is considered that the pellet can be burned at a low temperature and in a short time. 312/Inventive Manual (Supplement)/93-07/93110493 The PDP of the hot and short-lived PDP of the short-time burning accuracy and the short-time PDP of the dielectric layer and the short-time quality of the PDP. The PDP of k-temperature and short-time quality layer is characterized by the polymerization of [A] repeating units to enhance the distance between the particles of the inorganic granules.

X •1248425X • 1248425

(式中，X係指氫原子或曱基；R1係指單鍵、亞曱基、或 碳數2〜5伸烷基；η係指1〜6整數。） 本發明之含有無機粒子之組成物亦可再含有[C ]含有放 射線感光性成分之組成物（以下稱「含放射線感光性成分組 成物」）。 本發明之轉印膜之特徵在於，具有由上述含有無機粒子 之組成物所獲得的膜形成材料層。 本發明之第1種P D Ρ之製造方法（以下稱「P D Ρ之製造方 法（1 )」），其特徵係包含有：將由本發明之含有無機粒子之 組成物所獲得的膜形成材料層，轉印於基板上，再藉由對 經轉印過的膜形成材料層施行燒成，而在上述基板上形成 介電質層的步驟。 本發明之第2種PDP之製造方法（以下稱「PDP之製造方 法（2 )」），其特徵係包含有：將由本發明之含有無機粒子之 組成物所獲得的膜形成材料層，轉印於基板上，並在經轉 印過的膜形成材料層上形成光阻膜，再對該光阻膜施行曝 光處理而形成光阻圖案潛像（latent image)，對該光阻膜 施行顯影處理而使光阻圖案顯影化，再對該膜形成材料層 施行蝕刻處理而形成對應著光阻圖案的圖案層，藉由對該 圖案層施行燒成處理，而形成由分隔壁、電極、電阻體、 9 312/發明說明書(補件)/93-07/93110493 1248425 介電質層、螢光體、彩色濾光片、及黑矩陣中所選擇構成 要件的步驟。 再者，本發明之第3種P D P之製造方法（以下稱「P D P之 製造方法（3 )」），其特徵係包含有：在支撐膜上形成光阻 膜、與由本發明之含有無機粒子之組成物所獲得膜形成材 料層的層積膜，將支撐膜上所形成的層積膜轉印於基板 上，再對構成該層積膜的光阻膜施行曝光處理而形成光阻 圖案潛像，對該光阻膜施行顯影處理而使光阻圖案顯影 化，再對該膜形成材料層施行蝕刻處理而形成對應著光阻 圖案的圖案層，藉由對該圖案層施行燒成處理，而形成由 分隔壁、電極、電阻體、介電質層、螢光體、彩色濾光片、 及黑矩陣中所選擇構成要件的步驟。 再者，本發明之第4種PDP之製造方法（以下稱「PDP之 製造方法（4 )」），其特徵係包含有：將由本發明之含放射線 感光性無機粒子組成物所獲得膜形成材料層，轉印於基板 上，再對該膜形成材料層施行曝光處理而形成圖案之潛 像，對該膜形成材料層施行顯影處理而形成圖案層，再藉 由對該圖案層施行燒成處理，而形成由分隔壁、電極、電 阻體、介電質層、螢光體、彩色濾光片、及黑矩陣中所選 擇構成要件的步驟。 【實施方式】 以下，針對本發明之含有無機粒子之組成物（以下簡稱 「組成物」），進行詳細說明。 本發明組成物，通常係含有無機粒子、黏結樹脂、及溶 10 312/發明說明書(補件)/93-07/93110493 1248425 劑。聚合體[B - 1 ]係含於黏結樹脂中。 &lt;無機粒子&gt; 構成本發明組成物之無機粒子的組成無機物質並無特 別限制，可配合由該組成物所形成燒結體的用途（P D P構成 要件的種類）適當選擇。 其中，相關供形成構成PDP之「介電質層」或「分隔壁」 用組成物中所含的無機粒子，可舉例如：軟化點3 5 0〜7 0 0 °C (最好4 0 0〜6 0 0 °C )範圍内的玻璃粉末。當玻璃粉末之軟化 點低於3 5 0 °C之情況時，在對由該組成物所形成膜形成材 料層施行燒成步驟時，因為在黏結樹脂等有機物質尚未完 全分解去除的階段，玻璃粉末便已熔融，因而所形成介電 質層中將殘留部分有機物質，結果介電質層將被著色，有 光穿透率降低的傾向。反之，當玻璃粉末之軟化點超過7 0 0 °C之情況時，因為需要較高於7 0 0 °C的高溫進行燒成，因 而玻璃基板將容易發生扭曲等狀況。 較佳的玻璃粉末之具體例，可例示如：（1 )氧化鉛、氧化 硼及氧化矽（P b 0 - B 2 0 3 - S i 0 2系）之混合物；（2 )氧化鉛、氧 化硼、氧化矽及氧化鎂（P b 0 - B 2 0 3 _ S i 0 2 - M g 0系）之混合物； (3 )氧化鉛、氧化硼、氧化矽及氧化鋁（P b 0 - B 2 0 3 - S i 0 2 - A 12 0 3 系）之混合物；（4 )氧化鉛、氧化硼、氧化矽及氧化鈣 (P b 0 - B 2 0 3 - S i 0 2 - C a 0系）之混合物；（5 )氧化斜、氧化鋅、 氧化石朋及氧化石夕（P b 0 - Ζ η 0 - B 2 0 3 - S i 0 2系）之混合物等等。 該等玻璃粉末亦可含於（併用）供形成介電質層與分隔 壁以外之構成要件（如：電極、電阻體、螢光體、彩色濾光 11 312/發明說明書(補件)/93-07/93110493 1248425 片、或黑矩陣）之組成物中。在供獲得該等面板材料用之含 有無機粒子之樹脂組成物中，玻璃熔塊（g 1 a s s f r i t )含有 量係相對於無機粒子總量，通常為9 0重量％以下，最好 5 0〜9 0重量％。 供形成構成P D P的「電極」用組成物中所含有無機粒子’ 可舉例由如Ag、Au、Al、Ni、Ag-Pd合金、Cu、Cr等所構 成金屬粒子。 該等金屬粒子亦可在供形成介電質層用組成物中，依與 玻璃粉末併用的形式含有。介電質層形成用組成物中之金 屬粒子含有量，係相對於無機粒子總量，通常為1 0重量％ 以下，最好0.1〜5重量％。 供形成構成PDP之「電阻體」用組成物中所含有無機粒 子，有如由Ru〇2等所構成粒子。 供形成構成PDP的「螢光體」用組成物中所含有無機粒 子，可舉例如由 Y 2 0 3 : E U 3 +、Y 2 S i 0 5 : E U 3 +、Y 3 A 1 5 Ο 1 2 : E U 3 +、 YV〇/i:Eu3+、（Y，Gd)B〇3:Eu3+、Zn3(P〇4)2:Mn 等紅色用螢光物 質；Zn2Si〇4:Mn、BaAl】2〇i9:Mn、BaMgAlM〇23:Mn、 LaPO^(Ce，Tb)、Y3(Al，Ga)5〇12:Tb 等綠色用螢光物 質；Y2Si〇5:Ce、BaMgAli〇Oi7:Eu2+、BaMgAlH〇23:Eu2+、 (Ca，Sr，Ba)&quot;(P〇4)GCl2:Eu2+、（Zn，Cd)S:Ag 等藍色用螢光 物質所構成粒子。 供形成構成PDP的「彩色濾光片」用組成物中所含有無 機粒子，可舉例如由F e 2 0 3、P b 3 0 /1等紅色用物質、C r 2 0 3等 綠色用物質、2 ( A 1 2 N a 2 S i 3 0 i ◦) · N a 2 S ^等藍色用物質所構成 12 312/發明說明書(補件)/93-07/93110493 1248425 粒子。 供形成構成PDP的「黑矩陣」用組成物中所含有無機粒 子，可舉例如由Μ η、F e、C r等所構成粒子。 〈黏結樹脂〉 構成本發明組成物之黏結樹脂，係含有聚合體[B - 1 ]之 樹脂。黏結樹脂可單獨為聚合體[B - 1 ]，亦可為與其他聚合 體的混合物。其他聚合體最好使用上述聚合體[B - 1 ]以外的 丙稀酸樹脂。 聚合體[B - 1 ]係具有上述式（1 )所示重複單位的聚合 體，最好為丙烯酸樹脂。黏結樹脂乃藉由含有丙烯酸樹脂， 便可在所形成膜形成材料層中，發揮對基板的優越（加熱） 密接性。所以，當將本發明組成物塗佈於支撐膜上，而製 造轉印膜之情況時，所獲得轉印膜係膜形成材料層轉印性 (對基板的加熱密接性）優越者。 構成本發明組成物的丙烯酸樹脂（聚合體[B - 1 ]及其他 聚合體），可從具有適當地黏結性而可黏結無機粒子，且經 膜形成材料之燒成處理（4 0 0〜6 0 0 °C )便可完全氧化去除的 (共）聚合體中選擇。 上述式（1 )所示重複單位係藉由使下述式（i )所示單體 進行（共）聚合而形成。 X H2C=C (i)(wherein X represents a hydrogen atom or a fluorenyl group; R1 means a single bond, a fluorenylene group, or a C 2~5 alkyl group; η means an integer of 1 to 6). The composition of the present invention containing inorganic particles The composition may further contain [C] a composition containing a radiation sensitive component (hereinafter referred to as "radiation-containing photosensitive component composition"). The transfer film of the present invention is characterized by having a film forming material layer obtained from the above composition containing inorganic particles. The method for producing a PD of the first aspect of the present invention (hereinafter referred to as "the method for producing PD (1)") includes a film forming material layer obtained from the inorganic particle-containing composition of the present invention. The step of transferring onto the substrate and then baking the transferred film forming material layer to form a dielectric layer on the substrate. The method for producing a second PDP of the present invention (hereinafter referred to as "the method for producing PDP (2)") is characterized in that a film forming material layer obtained by the composition containing inorganic particles of the present invention is transferred. Forming a photoresist film on the transferred film forming material layer on the substrate, and performing an exposure process on the photoresist film to form a resist pattern latent image, and performing development processing on the photoresist film And the photoresist pattern is developed, and the film forming material layer is etched to form a pattern layer corresponding to the photoresist pattern, and the pattern layer is subjected to a baking treatment to form a partition wall, an electrode, and a resistor. , 9 312 / invention specification (supplement) / 93-07 / 93110493 1248425 The steps of selecting the constituent elements in the dielectric layer, the phosphor, the color filter, and the black matrix. Further, a method for producing a third PDP of the present invention (hereinafter referred to as "the method for producing a PDP (3)") includes a method of forming a photoresist film on a support film and containing inorganic particles according to the present invention. a laminated film of the film forming material layer obtained by the composition, the laminated film formed on the supporting film is transferred onto the substrate, and the photoresist film constituting the laminated film is subjected to an exposure treatment to form a photoresist pattern latent image. The photoresist film is subjected to development processing to develop a photoresist pattern, and the film formation material layer is subjected to an etching treatment to form a pattern layer corresponding to the photoresist pattern, and the pattern layer is subjected to a baking treatment. A step of forming a constituent element selected from the group consisting of a partition wall, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, and a black matrix is formed. Furthermore, the method for producing a fourth PDP of the present invention (hereinafter referred to as "the method for producing a PDP (4)") includes a film forming material obtained by using the composition containing the radiation-sensitive inorganic particles of the present invention. The layer is transferred onto the substrate, and the film forming material layer is subjected to exposure treatment to form a latent image of the pattern, and the film forming material layer is subjected to development processing to form a pattern layer, and the pattern layer is subjected to firing treatment. And forming a component selected from the partition wall, the electrode, the resistor, the dielectric layer, the phosphor, the color filter, and the black matrix. [Embodiment] Hereinafter, the inorganic particle-containing composition (hereinafter simply referred to as "composition") of the present invention will be described in detail. The composition of the present invention usually contains inorganic particles, a binder resin, and a solution of the invention (Supplement) / 93-07/93110493 1248425. The polymer [B - 1 ] is contained in the binder resin. &lt;Inorganic Particles&gt; The composition of the inorganic particles constituting the composition of the present invention is not particularly limited, and may be appropriately selected in accordance with the use of the sintered body formed of the composition (the type of the P D P constituent). In addition, the inorganic particles contained in the composition for forming a "dielectric layer" or a "partition wall" constituting the PDP may be, for example, a softening point of 3 5 0 to 70 ° C (preferably 4 0 0). ~6 0 0 °C) Glass powder in the range. When the softening point of the glass powder is lower than 305 ° C, when the film forming material layer formed of the composition is subjected to the firing step, the glass is in a stage where the organic substance such as the binder resin has not been completely decomposed and removed. The powder is already melted, and a part of the organic substance remains in the formed dielectric layer, and as a result, the dielectric layer is colored, and the light transmittance tends to decrease. On the other hand, when the softening point of the glass powder exceeds 700 ° C, since the firing is required at a high temperature higher than 700 ° C, the glass substrate is likely to be distorted. Specific examples of preferred glass powders include, for example, (1) a mixture of lead oxide, boron oxide, and cerium oxide (P b 0 - B 2 0 3 - S i 0 2 system); (2) lead oxide, oxidation a mixture of boron, cerium oxide and magnesium oxide (P b 0 - B 2 0 3 _ S i 0 2 - M g 0 system); (3) lead oxide, boron oxide, cerium oxide and aluminum oxide (P b 0 - B a mixture of 2 0 3 - S i 0 2 - A 12 0 3 ); (4) lead oxide, boron oxide, cerium oxide and calcium oxide (P b 0 - B 2 0 3 - S i 0 2 - C a 0 (5) a mixture of oxidized oblique, zinc oxide, oxidized stone, and oxidized stone (P b 0 - Ζ η 0 - B 2 0 3 - S i 0 2). The glass powders may also be included (and used) for forming dielectric elements and partition walls (eg, electrodes, resistors, phosphors, color filters 11 312 / invention instructions (supplements) / 93 -07/93110493 1248425 Composition of sheets, or black matrix). In the resin composition containing the inorganic particles for obtaining the panel material, the content of the glass frit (g 1 assfrit ) is usually 90% by weight or less, preferably 5 0 to 9 based on the total amount of the inorganic particles. 0% by weight. The inorganic particles contained in the composition for forming an "electrode" for forming P D P can be exemplified by metal particles such as Ag, Au, Al, Ni, Ag-Pd alloy, Cu, Cr or the like. These metal particles may be contained in a form for forming a dielectric layer in combination with a glass powder. The content of the metal particles in the composition for forming a dielectric layer is usually 10% by weight or less, preferably 0.1 to 5% by weight based on the total amount of the inorganic particles. The inorganic particles contained in the composition for forming a "resistance body" constituting the PDP are, for example, particles composed of Ru 2 or the like. The inorganic particles contained in the composition for forming a "phosphor" constituting the PDP may be, for example, Y 2 0 3 : EU 3 +, Y 2 S i 0 5 : EU 3 + , Y 3 A 1 5 Ο 1 2 : EU 3 +, YV〇/i: Eu3+, (Y, Gd) B〇3: Eu3+, Zn3(P〇4)2: Mn and other red fluorescent substances; Zn2Si〇4: Mn, BaAl] 2〇 I9: Mn, BaMgAlM〇23: Mn, LaPO^(Ce, Tb), Y3(Al, Ga)5〇12: Tb and other green fluorescent substances; Y2Si〇5: Ce, BaMgAli〇Oi7: Eu2+, BaMgAlH〇 23: particles composed of a blue fluorescent substance such as Eu2+, (Ca, Sr, Ba) &quot;(P〇4)GCl2: Eu2+, (Zn, Cd)S:Ag. The inorganic particles to be contained in the composition for forming a "color filter" constituting the PDP include, for example, a red substance such as F e 2 0 3 or P b 3 0 /1 or a green substance such as C r 2 0 3 . 2 (A 1 2 N a 2 S i 3 0 i ◦) · N a 2 S ^ and other blue substances constitute 12 312 / invention specification (supplement) / 93-07/93110493 1248425 particles. The inorganic particles contained in the composition for forming a "black matrix" constituting the PDP may be, for example, particles composed of Μ, F e, and C r . <Bonding Resin> The binder resin constituting the composition of the present invention is a resin containing the polymer [B-1]. The binder resin may be a polymer [B - 1 ] alone or a mixture with other polymers. As the other polymer, an acrylic resin other than the above polymer [B-1] is preferably used. The polymer [B - 1 ] is a polymer having a repeating unit represented by the above formula (1), and is preferably an acrylic resin. The binder resin exhibits excellent (heating) adhesion to the substrate in the formed film forming material layer by containing an acrylic resin. Therefore, when the composition of the present invention is applied onto a support film to produce a transfer film, the transfer film-forming material layer transfer property (heating adhesion to the substrate) is superior. The acrylic resin (polymer [B-1] and other polymer) constituting the composition of the present invention can be bonded to an inorganic particle by having an appropriate adhesive property, and is subjected to a baking treatment by a film forming material (400 to 6). 0 0 °C) The choice of (co)polymers that can be completely oxidized and removed. The repeating unit represented by the above formula (1) is formed by (co)polymerizing a monomer represented by the following formula (i). X H2C=C (i)

13 312/發明說明書(補件)/93-07/93 Π 0493 1248425 (式中，X、R 1及η之定義係如同上式（1 )。） 上式（1 )中，R 1特別以單鍵或亞曱基為佳。此外，η特別 以1為佳。 上式（i )所示單體之具體例，可舉例如：（曱基）丙烯酸縮 水甘油酯、/?-(曱基）丙烯酸曱基縮水甘油酯、（曱基）丙烯 醯基曱基氧化環己烯、3，4 -(曱基）丙烯酸環氧環己基曱酯 等。 聚合體[B - 1 ]係最好為上式（i )所示單體、與其他單體之 共聚合體，其他單體最好為其他（曱基）丙烯酸酯化合物。 相關的其他（曱基）丙烯酸酯化合物之具體例，可舉例 如：（曱基）丙烯酸曱醋、（甲基）丙烯酸乙S旨、（曱基）丙烯酸 丙6旨、（曱基）丙稀酸異丙酯、（曱基）丙稀酸丁 0旨、（曱基） 丙烯酸異丁酯、（甲基）丙烯酸第三丁酯、（曱基）丙烯酸庚 酯、（甲基）丙烯酸戊酯、（曱基）丙烯酸異戊酯、（曱基）丙 烯酸己酯、（曱基）丙烯酸庚酯、（曱基）丙烯酸辛酯、（甲基） 丙烯酸異辛酯、（曱基）丙烯酸乙基己酯、（曱基）丙烯酸壬 酯、（甲基）丙烯酸癸酯、（曱基）丙烯酸異癸酯、（曱基）丙 烯酸十一烷酯、（曱基）丙烯酸十二烷酯、（甲基）丙烯酸月 桂酯、（甲基）丙烯酸硬脂酯、（曱基）丙烯酸異硬脂酯等（甲 基）丙烯酸烷酯； (甲基）丙烯酸羥基乙酯、2 -(曱基）丙烯酸羥基丙酯、 3 -(曱基）丙烯酸羥基丙酯、2 -(曱基）丙烯酸羥基丁酯、 3-(曱基）丙烯酸羥基丁酯、4-(曱基）丙烯酸羥基丁酯等（甲 基）丙烯酸羥基烷酯； 14 312/發明說明書(補件)/93-07/93110493 1248425 (曱基）丙烯酸苯氧基乙酯、2 -羥基-3-苯氧基丙基（曱基） 丙烯酸酯等（曱基）丙烯酸苯氧基烷酯； 2-(曱基）丙烯酸甲氧基乙酯、2-(曱基）丙烯酸乙氧基乙 酯、2-(曱基）丙烯酸丙氧基乙酯、2-(曱基）丙烯酸丁氧基 乙S旨、2-(曱基）丙烯酸甲氧基丁酯等（曱基）丙烯酸烷氧基 烧S旨； 聚乙二醇單（曱基）丙烯酸酯、乙氧基二乙二醇（曱基）丙 烯酸酯、曱氧基聚乙二醇（曱基）丙烯酸酯、（曱基）丙烯酸 苯氧基聚乙二醇酯、壬基苯氧基聚乙二醇（曱基）丙烯酸 酯、聚丙二醇（曱基）丙烯酸酯、曱氧基聚丙二醇（曱基）丙 烯酸酯、乙氧基聚丙二醇（曱基）丙烯酸酯、壬基苯氧基聚 丙二醇（曱基）丙烯酸酯等（曱基）丙烯酸聚伸烷二醇酯； (曱基）丙烯酸環己酯、4-(甲基）丙烯酸丁基環己酯、（甲 基）丙烯酸二環戊酯、（曱基）丙烯酸二環戊烯酯、（曱基） 丙烯酸二環戊烯酯、（曱基）丙烯酸二環戊二烯酯、（曱基） 丙烯酸冰片酯、（曱基）丙烯酸異冰片酯、（曱基）丙烯酸三 環癸烯酯等（甲基）丙烯酸環烷酯； (曱基）丙烯酸芊醋、（曱基）丙烯酸四氫糠酯等。該等（曱 基）丙烯酸酯化合物可單獨使用，或混合使用2種以上。 該等之中，最好為（曱基）丙烯酸烷酯、（曱基）丙烯酸羥 基烷酯、及（曱基）丙烯酸烷氧基烷酯，尤其作為（曱基）丙 烯酸酯化合物，以（甲基）丙烯酸丁酯、（曱基）丙烯酸乙基 己酯、（曱基）丙烯酸月桂酯、（甲基）丙烯酸異癸酯、2-(甲 基）丙烯酸乙氧基乙酯、及2-(甲基）丙烯酸羥基丙酯為佳。 15 312/發明說明書(補件)/93-07/93110493 1248425 除（甲基）丙烯酸酯化合物之外的其他單體，僅要能與上 述（曱基）丙烯酸酯化合物共聚合之化合物的話便可，其餘 並無特別限，可舉例如：（曱基）丙烯酸、乙烯基苯曱酸、 順丁烯二酸、乙烯基苯二曱酸等不飽和羧酸類；乙烯基苄 基曱醚、乙烯基縮水甘油醚、苯乙烯、α -曱基苯乙烯、丁 二稀、異戊二稀等含乙稀基之自由基聚合性化合物。 再者，在利用後述光微影法的PDP構成要件之形成中， 當膜形成材料層之蝕刻處理中需要鹼可溶性之情況時，上 述其他共聚合性單體（共聚合成分），最好含有具羧基之單 體。上述具羧基之單體的具體例，可舉例如：丙烯酸、曱基 丙烯酸、馬來酸、富馬酸、巴豆酸、衣康酸、檸康酸 (citraconic acid)、曱基延胡索酸（mesaconic acid)、肉 桂酸、琥珀酸單（2 -(曱基）丙烯醯氧基乙基）酯、ω -羧基-聚己内酯單（曱基）丙烯酸酯等。該等之中，最好為甲基丙 稀酸。 其中，較佳的鹼可溶性樹脂之具體例，可舉例如：（曱基） 丙烯酸系樹脂、羥基苯乙烯樹脂、酚醛樹脂、聚酯樹脂等。 此種鹼可溶性樹脂中，較佳者乃為上述具羧基之單體， 與如（曱基）丙烯酸烷酯、（甲基）丙烯酸羥基烷酯、及（甲基） 丙烯酸烷氧基烷酯的共聚合體，較佳的（曱基）丙烯酸酯可 舉例如：（曱基）丙烯酸丁酯、（曱基）丙烯酸乙基己酯、（曱 基）丙烯酸月桂酯、（曱基）丙烯酸異癸酯、2 -(曱基）丙烯酸 乙氧基乙酯、2 -(曱基）丙烯酸羥基丙酯。 在聚合體[Β - 1 ]中，上式（i )所示單體之使用比率，係相 16 312/發明說明書(補件)/93-07/93 ] 10493 1248425 對於總單體1 Ο 0重量份，通常為ο . 1〜5 0重量份，最好 0.1〜10重量份，尤以1〜5重量份為佳。 聚合體[Β - 1 ]的分子量，利用凝膠滲透層析儀（以下稱 「G P C」）所測量聚苯乙烯換算的重量平均分子量（以下簡稱 「重量平均分子量」），最好為4 , 0 0 0〜3 0 0，0 0 0，尤以 1 0，0 0 0 〜2 0 0，0 0 0 為佳。 再者，可與聚合體[Β - 1 ]混合使用的其他聚合體，最好 為含有其他（甲基）丙烯酸酯化合物的聚合體。 黏結樹脂總體中，上式（1 )所示重複單位的比率，通常 為0 . 1〜5 0重量％，最好0 . 1〜1 0重量％，尤以1〜5重量％為佳。 此外，黏結樹脂總體中，源自（甲基）丙烯酸酯的重複單位 (包含上式（1)所示重複單位在内）比率，最好在70重量％ 以上，尤以9 0重量％以上為佳。 本發明組成物中之黏結樹脂含有比率，係相對於無機粒 子1 0 0重量份，最好為5〜8 0重量份，尤以5〜3 0重量份為 佳。當黏結樹脂比率低於5重量份之情況時，便無法確實 黏結保持著無機粒子，反之，當此比率超過8 0重量份之情 況時，燒成步驟將需要較長的時間，且所形成燒結體（如介 電質層）將無法具有充分的強度與膜厚。 &lt;溶劑&gt; 在本發明組成物中通常含有溶劑。上述溶劑最好為與無 機粒子間具親和性，對黏結樹脂的溶解性佳，且可賦予所 獲得組成物適當黏性的溶劑，經由乾燥可容易蒸發除去者。 相關溶劑的具體例，可舉例如：二乙酮、曱丁酮、二丙 17 312/發明說明書(補件)/93-07/93110493 1248425 酮、環己酮等酮類；正戊醇、4 -曱基-2 -戊醇、環己醇、二 丙酮醇等醇類；乙二醇單曱醚、乙二醇單乙醚、乙二醇單 丁醚、丙二醇單曱醚、丙二醇單乙醚等醚系醇類；醋酸正 丁酯、醋酸戊酯等不飽和脂肪族單羧酸烷酯類；乳酸乙酯、 乳酸正丁酯等乳酸酯類；甲基纖維素醋酸酯、乙基溶纖劑 醋酸酯、丙二醇單甲醚醋酸酯、3 -乙氧基丙酸乙醋等醚系 酯類等等。該等可單獨使用，或組合使用2種以上。 本發明組成物中的溶劑含有比率，就從組成物黏度維持 在較佳範圍的觀點而言，最好相對無機粒子1 〇 〇重量份， 在4 0重量份以下，尤以5〜3 0重量份為佳。 &lt;分散劑&gt; 本發明組成物最好含有分散劑。該分散劑最好為下式（2 ) 所示碎烧偶合劑[含飽和烧基之（烧基）烧氧基碎烧]。 H2P+1CP-Si—^0CmH2m+1) Σ ^η^2η+1 (2) 3-a (式中，ρ係指3〜2 Ο整數，m係指1〜3整數，η係指1〜3 整數，a係指1至3的整數。） 在上式（2 )中，表示飽和烷基之碳數的ρ係設定為3〜2 0 的整數，最好為4〜1 6的整數。 即使含有ρ小於3的含飽和烧基之（烧基）烧氧基石夕烧， 仍將有所獲得膜形成材料層無法顯現出充分可撓性的情 況。反之，ρ值超過2 0的含飽和烷基之（烷基）烷氧基矽烷 的分解溫度偏高，在所獲得膜形成材料層的燒成步驟中， 因為於有機物質（上述矽烷衍生物）尚未完全分解去除的階 18 312/發明說明書(補件)/93-07/93〗】0493 1248425 段中，玻璃粉末便將熔融，因而所形成介電質層中將 部分的有機物質，結果便有介電質層之光穿透率降低 況。 上式（2 )所示矽烷偶合劑的具體例，可舉例如：正丙 曱基甲氧基矽烷、正丁基二甲基甲氧基矽烷、正癸基 基曱氧基矽烷、正十六烷基二曱基曱氧基矽烷、正二 基二曱基曱氧基矽烷等、飽和烷基二曱基曱氧基矽烷 二Ι,ιιι^Ι,η^Ι) •’ 正丙基二乙基甲氧基矽烷、正丁基二乙基曱氧基矽 正癸基乙基曱氧基矽烷、正十六烷基二乙基甲氧基矽 正二十烷基二乙基曱氧基矽烷等飽和烷基二乙基曱氧 烧類（a = 1，m = 1，η = 2 ); 正丁基二丙基甲氧基矽烷、正癸基二丙基曱氧基矽 正十六烧基二丙基曱氧基石夕烧、正二十烧基二丙基曱 石夕烧等飽和烧基丙基曱氧基石夕烧類（a = 1，m = 1，η = 3 ); 正丙基二曱基乙氧基矽烷、正丁基二曱基乙氧基矽 正癸基二曱基乙氧基矽烷、正十六烷基二曱基乙氧基 烷、正二十烷基二曱基乙氧基矽烷等飽和烷基二曱基 基石夕烧類（a = 1，m = 2，η = 1 ); 正丙基二乙基乙氧基石夕烧、正丁基二乙基乙氧基石夕 正癸基二乙基乙氧基矽烷、正十六烷基二乙基乙氧基 烷、正二十烷基二乙基乙氧基矽烷等飽和烷基二乙基 基石夕烧類（a二1，in = 2，η = 2 ); 正丁基二丙基乙氧基矽烷、正癸基二丙基乙氧基矽 312/發明說明書(補件)/93-07/93110493 殘留 的狀 基二 二曱 十烷 類（a 烧、 烧、 基妙 烧、 氧基 烧、 矽 乙氧 烷、 矽 乙氧 院、 19 1248425 正十六烷基二丙基乙氧基矽烷、正二十烷基丙基 烷等飽和烷基二丙基乙氧基矽烷類（a = 1，in = 2，η = 正丙基二曱基丙氧基矽烷、正丁基二曱基丙氧 正癸基二甲基丙氧基矽烷、正十六烷基二曱基丙 完、正二十烧基二曱基丙氧基石夕烧等飽和烧基二 基石夕烧類（a =l，m = 3，n = l); 正丙基二乙基丙氧基矽烷、正丁基二乙基丙氧 正癸基二乙基丙氧基矽烷、正十六烷基二乙基丙 烷、正二十烷基二乙基丙氧基矽烷等飽和烷基二 基石夕烧類（a =l，m = 3，n = 2); 正丁基二丙基丙氧基矽烷、正癸基二丙基丙氧 正十六烧基二丙基丙氧基石夕烧、正二十烧基丙基 坑等飽和烧基二丙基丙氧基石夕烧類（a =l，m = 3，n = 正丙基甲基二甲氧基矽烷、正丁基甲基二甲氧 正癸基甲基二甲氧基矽烷、正十六烷基甲基二曱 烷、正二十烷基曱基二曱氧基矽烷等飽和烷基甲 基石夕烧類（a =2，m=l，n = l); 正丙基乙基二甲氧基矽烷、正丁基乙基二甲氧 正癸基乙基二甲氧基矽烷、正十六烷基乙基二曱 烷、正二十烷基乙基二曱氧基矽烷等飽和烷基乙 基石夕烧類（a = 2，in = 1，η = 2 ); 正丁基丙基二甲氧基矽烷、正癸基丙基二甲氧 正十六烷基丙基二曱氧基矽烷、正二十烷基丙基 矽烷等飽和烷基丙基二曱氧基矽烷類（a = 2，m = 1， 312/發明說明書(補件)/93-07/931 ] 0493 乙氧基矽 3)； 基石夕烧、 氧基矽 曱基丙氧 基石夕纟完、 氧基矽 乙基丙氧 基石夕烧、 丙氧基石夕 3)； 基石夕烧、 氧基矽 基二甲氧 基矽烷、 氧基矽 基二甲氧 基矽烷、 二曱氧基 η = 3 ); 20 1248425 正丙基曱基二乙氧基矽烷、正丁基曱基二乙氧基矽烷、 正癸基曱基二乙氧基矽烷、正十六烷基曱基二乙氧基矽 烷、正二十烷基曱基二乙氧基矽烷等飽和烷基曱基二乙氧 基石夕烧類（a =2，πι = 2，γι 二 1)， 正丙基乙基二乙氧基矽烷、正丁基甲基二乙氧基矽烷、 正癸基乙基二乙氧基矽烷、正丙基曱基二曱氧基矽烷、正 二十烷基二曱基曱氧基矽烷等飽和烷基乙基二乙氧基矽烷 類（a =2,111二 2，n = 2); 正丁基丙基二乙氧基矽烷、正癸基丙基二乙氧基矽烷、 正十六烷基丙基二乙氧基矽烷、正二十烷基丙基二乙氧基 矽烷等飽和烷基丙基二乙氧基矽烷類（a = 2，m = 2，η = 3 ); 正丙基曱基二丙氧基矽烷、正丁基曱基二丙氧基矽烷、 正癸基甲基二丙氧基矽烷、正十六烷基甲基二丙氧基矽 烷、正二十烷基曱基二丙氧基矽烷等飽和烷基曱基二丙氧 基石夕烧類（a二2，m=3，n=l); 正丙基乙基二丙氧基石夕烧、正丁基乙基二丙氧基石夕纟完、 正癸基乙基二丙氧基矽烷、正十六烷基乙基二丙氧基矽 烷、正二十烷基乙基二丙氧基矽烷等飽和烷基乙基二丙氧 基石夕烧類（a = 2，m = 3，η二2 ); 正丁基丙基二丙氧基矽烷、正癸基丙基二丙氧基矽烷、 正十六烷基丙基二丙氧基矽烷、正二十烷基丙基二丙氧基 石夕烧等飽和烧基丙基二丙氧基石夕：)：完類（a = 2，m = 3，η = 3 ); 正丙基三曱氧基矽烷、正丁基三曱氧基矽烷、正癸基三 曱氧基矽烷、十六烷基三曱氧基矽烷、正二十烷基三曱氧 21 312/發明說明書(補件)/93-07/931 ] 0493 1248425 基矽烷等飽和烷基三曱氧基矽烷類（a = 3，m = 1 ); 正丙基三乙氧基矽烷、正丁基三乙氧基矽烷、正癸基三 乙氧基矽烷、正十六烷基三乙氧基矽烷、正二十烷基三乙 氧基矽烷等飽和烷基三乙氧基矽烷類（a = 3，m = 2 ); 正丙基三丙氧基矽烷、正丁基三丙氧基矽烷、正癸基三 丙氧基石夕烧、正十六烧基三丙氧基石夕烧、正二十烧基三丙 氧基矽烷等飽和烷基三丙氧基矽烷類（a = 3，m = 3 )等。該等 可單獨使用，或組合使用2種以上。 該等之中，最好為如：正丁基三曱氧基矽烷、正癸基三 曱氧基矽烷、十六烷基三曱氧基矽烷、正癸基二曱基曱氧 基矽烷、正十六烷基二曱基曱氧基矽烷、正丁基三乙氧基 石夕烧、正癸基三乙氧基石夕烧、正十六烧基三乙氧基石夕纟完、 正癸基乙基二乙氧基矽烷、正十六烷基乙基二乙氧基矽 烷、正丁基三丙氧基矽烷、正癸基三丙氧基矽烷、十六烷 基三丙氧基石夕烧等。 本發明轉印膜之膜形成材料層中，矽烷偶合劑含有比 率，係相對於玻璃粉末1 0 0重量份，最好為0 . 0 0 1〜1 0重量 份，尤以0 · 0 0 1〜5重量份為佳。若矽完偶合劑比率低於 0 . 0 0 1重量份之情況時，將無法充分發揮提昇玻璃粉末分 散安定性的效果，且無法充分地發揮所形成膜形成材料層 之可撓性提昇效果。反之，若此比率超過1 0重量份的情況 時，在保存所獲得玻璃塗劑組成物之際，將有黏度隨時間 上升，且矽烷偶合劑彼此間引發反應，導致燒成後的光穿 透率降低之原因的情況發生。 22 312/發明說明書(補件)/93-07/93110493 1248425 &lt;可塑劑&gt; 在本發明組成物中，為使所形成膜形成材料層突顯出良 好的可撓性與燃燒性，最好含有可塑劑。該可塑劑最好為 由下式（3 )所示化合物所構成的可塑劑。13 312/Inventive Manual (Supplement)/93-07/93 Π 0493 1248425 (wherein, X, R 1 and η are defined as in the above formula (1).) In the above formula (1), R 1 is particularly A single bond or an anthracene group is preferred. Further, η is particularly preferably 1. Specific examples of the monomer represented by the above formula (i) include, for example, (fluorenyl) glycidyl acrylate, /?-(fluorenyl) decyl glycidyl acrylate, and (fluorenyl) propylene fluorenyl thiol oxidation. Cyclohexene, 3,4-(indenyl)acrylic acid epoxycyclohexyl decyl ester, and the like. The polymer [B - 1 ] is preferably a monomer represented by the above formula (i) and a copolymer with another monomer, and the other monomer is preferably another (mercapto) acrylate compound. Specific examples of the other (indenyl) acrylate compound include, for example, (mercapto)acrylic acid vinegar, (meth)acrylic acid ethyl s, (fluorenyl)acrylic acid propyl 6, (mercapto) propylene Isopropyl acrylate, (mercapto) acrylic acid, (butyl) isobutyl acrylate, (butyl) (meth) acrylate, heptyl (meth) acrylate, amyl (meth) acrylate , (fluorenyl) isoamyl acrylate, (decyl) hexyl acrylate, (heptyl)heptyl acrylate, octyl acrylate, isooctyl (meth) acrylate, ethyl (decyl) acrylate Hexyl ester, (decyl) decyl acrylate, decyl (meth) acrylate, isodecyl (decyl) acrylate, undecyl (decyl) acrylate, dodecyl (mercapto) acrylate, (a) (meth)acrylic acid alkyl acrylate, hydroxyethyl (meth) acrylate, isobutyl methacrylate Propyl ester, hydroxypropyl 3-(mercapto)acrylate, hydroxy 2-(indenyl) acrylate Butyl methacrylate, hydroxybutyl 3-(mercapto) acrylate, hydroxyalkyl (meth) acrylate such as hydroxybutyl 4-(decyl) acrylate; 14 312 / invention specification (supplement) / 93-07/93110493 1248425 (fluorenyl) phenoxyethyl acrylate, 2-hydroxy-3-phenoxypropyl (decyl) acrylate (phenoxy) phenoxyalkyl acrylate; 2-(indenyl) acrylate methoxy Ethyl ester, ethoxyethyl 2-(indenyl)acrylate, propoxyethyl 2-(indenyl)acrylate, butoxy 2-(indenyl)acrylate, 2-(indenyl)acrylic acid Alkyl butyl acrylate, ethoxydiethylene glycol (decyl) acrylate, decyloxy polyethylene Alcohol (mercapto) acrylate, phenoxy poly(ethylene glycol) acrylate, decyl phenoxy polyethylene glycol (decyl) acrylate, polypropylene glycol (decyl) acrylate, decyloxy Polypropylene glycol (mercapto) acrylate, ethoxylated polypropylene glycol (mercapto) acrylate, nonyl phenoxy polypropylene glycol (fluorenyl) acrylate (mercapto) propylene a polyalkylene glycol ester; (decyl)cyclohexyl acrylate, butylcyclohexyl 4-(meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (mercapto)acrylate, (fluorenyl) dicyclopentenyl acrylate, dicyclopentadienyl (decyl) acrylate, borneol (meth) acrylate, isobornyl (mercapto) acrylate, tricyclodecenyl (mercapto) acrylate And etc. (cyclo) (meth) acrylate; bismuth (mercapto) acrylate, tetrahydrofurfuryl (meth) acrylate, and the like. These (indenyl) acrylate compounds may be used singly or in combination of two or more. Among these, it is preferably an alkyl (meth) acrylate, a hydroxyalkyl (meth) acrylate, and an alkoxyalkyl (meth) acrylate, especially as a (fluorenyl) acrylate compound, Butyl acrylate, ethyl hexyl acrylate, lauryl (meth) acrylate, isodecyl (meth) acrylate, ethoxyethyl 2-(meth) acrylate, and 2-( Hydroxypropyl methacrylate is preferred. 15 312/Invention Manual (Supplement)/93-07/93110493 1248425 Other than the (meth) acrylate compound, only the compound which can be copolymerized with the above (mercapto) acrylate compound can be used. The rest is not particularly limited, and examples thereof include: (fluorenyl) acrylic acid, vinyl benzoic acid, maleic acid, vinyl benzoic acid, and the like; unsaturated carboxylic acids; vinyl benzyl oxime ether, vinyl A radically polymerizable compound containing a vinyl group such as glycidyl ether, styrene, α-mercaptostyrene, butyl bromide or isoprene. In the formation of the PDP constituent element by the photolithography method described later, when the film forming material layer is required to be alkali-soluble in the etching treatment, the other copolymerizable monomer (copolymerizable component) preferably contains a monomer having a carboxyl group. Specific examples of the above-mentioned monomer having a carboxyl group include acrylic acid, mercaptoacrylic acid, maleic acid, fumaric acid, crotonic acid, itaconic acid, citraconic acid, and mesaconic acid. , cinnamic acid, succinic acid mono (2-(indenyl) propylene methoxyethyl) ester, ω-carboxy-polycaprolactone mono(indenyl) acrylate, and the like. Among these, methacrylic acid is preferred. Specific examples of the preferable alkali-soluble resin include, for example, a (fluorenyl) acrylic resin, a hydroxystyrene resin, a phenol resin, and a polyester resin. Among such alkali-soluble resins, preferred are the above-mentioned monomers having a carboxyl group, and such as alkyl (meth)acrylate, hydroxyalkyl (meth)acrylate, and alkoxyalkyl (meth)acrylate. The copolymer, preferably (mercapto) acrylate, may, for example, be (butyl) butyl acrylate, (mercapto) ethylhexyl acrylate, (mercapto) acrylic lauryl ester, (decyl) isodecyl acrylate , 2-(indenyl) ethoxyethyl acrylate, 2-(indenyl) hydroxypropyl acrylate. In the polymer [Β - 1 ], the use ratio of the monomer represented by the above formula (i), the phase 16 312 / invention specification (supplement) / 93-07/93 ] 10493 1248425 for the total monomer 1 Ο 0 The parts by weight are usually from 1 to 50 parts by weight, preferably from 0.1 to 10 parts by weight, particularly preferably from 1 to 5 parts by weight. The molecular weight of the polymer [Β - 1 ] is a polystyrene-equivalent weight average molecular weight (hereinafter referred to as "weight average molecular weight") measured by a gel permeation chromatography (hereinafter referred to as "GPC"), preferably 4, 0. 0 0~3 0 0,0 0 0, especially 1 0,0 0 0 ~2 0 0,0 0 0 is better. Further, another polymer which can be used in combination with the polymer [Β - 1 ] is preferably a polymer containing another (meth) acrylate compound. In the total amount of the binder resin, the ratio of the repeating unit represented by the above formula (1) is usually from 0.1 to 50% by weight, preferably from 0.1 to 1% by weight, particularly preferably from 1 to 5% by weight. Further, in the total amount of the binder resin, the ratio of the repeating unit derived from the (meth) acrylate (including the repeating unit represented by the above formula (1)) is preferably 70% by weight or more, particularly preferably 90% by weight or more. good. The binder resin content ratio in the composition of the present invention is preferably from 5 to 80 parts by weight, particularly preferably from 5 to 30 parts by weight, based on 100 parts by weight of the inorganic particles. When the ratio of the binder resin is less than 5 parts by weight, the inorganic particles are not surely adhered, and when the ratio exceeds 80 parts by weight, the firing step takes a long time and the sintering is formed. The body (such as the dielectric layer) will not have sufficient strength and film thickness. &lt;Solvent&gt; A solvent is usually contained in the composition of the present invention. The solvent is preferably one which has affinity with inorganic particles, has good solubility in a binder resin, and can impart a suitable viscosity to the obtained composition, and can be easily removed by evaporation. Specific examples of the relevant solvent include, for example, diethyl ketone, acetobutyl ketone, dipropylene 17 312 / invention specification (supplement) / 93-07/93110493 1248425 ketones such as ketones and cyclohexanone; n-pentanol, 4 An alcohol such as mercapto-2-pentanol, cyclohexanol or diacetone; an ether such as ethylene glycol monoterpene ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monoterpene ether or propylene glycol monoethyl ether Alcohols; unsaturated aliphatic monocarboxylic acid alkyl esters such as n-butyl acetate and amyl acetate; lactate such as ethyl lactate and n-butyl lactate; methyl cellulose acetate, ethyl cellosolve acetate Ester, propylene glycol monomethyl ether acetate, ether ester such as 3-ethoxypropionic acid ethyl acetate, and the like. These may be used alone or in combination of two or more. The solvent content ratio in the composition of the present invention is preferably from 1 to 10 parts by weight, more preferably from 4 to 30 parts by weight, based on 1 part by weight of the inorganic particles, from the viewpoint of maintaining the viscosity of the composition in a preferred range. It is better. &lt;Dispersant&gt; The composition of the present invention preferably contains a dispersant. The dispersing agent is preferably a calcining coupler (saturated alkyl group-containing alkoxy calcined) of the following formula (2). H2P+1CP-Si—^0CmH2m+1) Σ ^η^2η+1 (2) 3-a (wherein ρ means 3~2 Ο integer, m means 1~3 integer, η means 1~ 3 is an integer, and a is an integer of 1 to 3. In the above formula (2), ρ indicating the carbon number of the saturated alkyl group is set to an integer of 3 to 2 0 , and preferably an integer of 4 to 16. Even if the (calcinyl) alkoxylate containing a saturated ketone having a ρ of less than 3 is used, it is still possible to obtain a film forming material layer which does not exhibit sufficient flexibility. On the other hand, the decomposition temperature of the (alkyl) alkoxysilane containing a saturated alkyl group having a ρ value of more than 20 is high, and in the calcination step of the obtained film-forming material layer, because of the organic substance (the above-described decane derivative) In the paragraph of 0933 1248425, the glass powder will melt, and part of the organic matter will be formed in the dielectric layer. As a result, the order will be completely decomposed and removed. The light transmittance of the dielectric layer is lowered. Specific examples of the decane coupling agent represented by the above formula (2) include n-propyl methoxy decane, n-butyl dimethyl methoxy decane, n-decyl decyl decane, and hexadecane. Alkyl fluorenyl decyloxy decane, n-diyl fluorenyl decyl oxane, etc., saturated alkyl dimethyl fluorenyl decane oxime, ι ι Ι η η • • • • • Methoxy decane, n-butyldiethyl decyl hydrazinium decyl decyl decyloxydecane, n-hexadecyldiethyl methoxy hydrazine n-dodecyldiethyl decyloxy decane, etc. Saturated alkyl diethyl oxime (a = 1, m = 1, η = 2); n-butyldipropyl methoxy decane, n-decyldipropyl decyloxy ruthenium hexadecyl Dipropyl decyl oxy-stone, n-octadecyldipropyl sulfonium, etc., saturated propyl methoxy oxime (a = 1, m = 1, η = 3); n-propyl Dimercaptoethoxy decane, n-butyl decyl ethoxy fluorenyl n-decyl ethoxy decane, n-hexadecyl decyl ethoxy oxane, n-eicosyl fluorenyl Saturated alkyl fluorenyl sulphones such as ethoxy decane (a = 1, m = 2, η = 1 ); n-propyl diethyl ethoxylate, n-butyl diethyl ethoxy oxime thioglycol diethyl ethoxy decane, n-hexadecyl di a saturated alkyl diethyl sulphate such as ethyl ethoxy hydride or n-eicosyl diethyl ethoxy decane (a bis, in = 2, η = 2 ); n-butyldipropyl Ethoxy decane, n-decyl dipropyl ethoxy ruthenium 312 / invention specification (supplement) / 93-07/93110493 Residual group of dioxane decane (a burning, burning, base burning, oxygen Base-burning, oxime ethoxylate, oxime, 19 1248425 n-hexadecyldipropylethoxydecane, n-icosylpropyl alkane, etc., saturated alkyldipropyl ethoxy decane (a = 1,in = 2,η = n-propyldidecylpropoxydecane, n-butyldidecylpropoxy-n-decyldimethylpropoxydecane, n-hexadecyldidecyl-propyl, a succinyl sulphate, a sulphide, a sulphide, a sulphide, etc. (a = l, m = 3, n = l); n-propyldiethylpropoxydecane, n-butyl Diethylpropoxy-n-decyldiethylpropoxydecane, n-hexadecane a saturated alkyl diketone such as diethyl propane or n-icosyl diethylpropoxydecane (a = l, m = 3, n = 2); n-butyldipropylpropoxydecane , n-decyldipropylpropoxy-n-hexyl sulphide dipropylpropoxy sulphide, n-octadecyl propyl pit, etc. Saturated alkyldipropylpropoxy sulphide (a = l, m = 3,n = n-propylmethyldimethoxydecane, n-butylmethyldimethoxy-n-decylmethyldimethoxydecane, n-hexadecylmethyldioxane, n-eicosylfluorene a saturated alkylmethyl group such as bis-oxydecane (a = 2, m = 1, n = l); n-propylethyldimethoxydecane, n-butylethyldimethoxy Alkyl ethyl dimethoxy decane, n-hexadecylethyl dioxane, n-icosylethyl decyloxy decane, etc. (a = 2, in = 1 , η = 2 ); saturated alkyl group such as n-butyl propyl dimethoxy decane, n-decyl propyl dimethoxy n-hexadecyl propyl di decyl decane or n-icosyl propyl decane Propyl dimethoxy decanes (a = 2, m = 1, 312 / invention specification (supplement) /93-07/931 ] 0493 ethoxylated ruthenium 3); ketone oxime, oxy fluorenyl propoxy oxime, oxime oxime ethyl propoxy zebra, propoxy oxalate 3); Xishou, oxymercaptodimethoxydecane, oxymercaptodimethoxydecane, dimethoxyl η = 3 ); 20 1248425 n-propyl decyl diethoxy decane, n-butyl fluorenyl A saturated alkyl fluorenyldiyl group such as diethoxy decane, n-decyl decyl diethoxy decane, n-hexadecyl decyl diethoxy decane, n-eicosyl decyl diethoxy decane Oxygen stone (a = 2, πι = 2, γι 2), n-propyl ethyl diethoxy decane, n-butyl methyl diethoxy decane, n-decyl ethyl diethoxy decane, a saturated alkyl ethyl diethoxy decane such as n-propyl decyl decyloxy decane or n-eicosyl decyl decyl oxane (a = 2,111 bis 2, n = 2); n-butyl Saturated alkyl propyl groups such as propyl diethoxy decane, n-decyl propyl diethoxy decane, n-hexadecyl propyl diethoxy decane, n-ecosyl propyl diethoxy decane Diethoxydecane Class (a = 2, m = 2, η = 3); n-propyl decyl dipropoxy decane, n-butyl decyl dipropoxy decane, n-decyl methyl dipropoxy decane, positive ten a saturated alkyl fluorenyl dipropoxylate such as hexaalkylmethyldipropoxydecane or n-eicoalkyl decyloxypropane; (a 2, m=3, n=l); N-propylethyldipropoxylate, n-butylethyldipropoxy fluorene, n-decylethyldipropoxydecane, n-hexadecylethyldipropoxydecane, positive a saturated alkyl ethyl dipropoxylate such as eicosylethyldipropoxydecane (a = 2, m = 3, η 2 ); n-butyl propyl dipropoxy decane, positive Saturated alkyl propyl dipropoxylate: decyl propyl dipropoxy decane, n-hexadecyl propyl dipropoxy decane, n-icosyl propyl dipropoxy oxalate, etc.: Complete class (a = 2, m = 3, η = 3); n-propyl tridecyloxydecane, n-butyltrimethoxy decane, n-decyltrimethoxy decane, hexadecyl trioxane Base decane, n-docosyltrioxane 21 312 / invention specification (supplement) /93-07/931 ] 04 93 1248425 saturated alkyl trimethoxy decanes such as decanes (a = 3, m = 1 ); n-propyl triethoxy decane, n-butyl triethoxy decane, n-decyl triethoxy decane a saturated alkyltriethoxynonane such as n-hexadecyltriethoxydecane or n-icosyltriethoxydecane (a = 3, m = 2); n-propyltripropoxydecane a saturated alkyl tripropoxy group such as n-butyltripropoxydecane, n-decyltripropoxylate, n-hexadecyltripropoxylate, n-octadecyltripropoxydecane Decanes (a = 3, m = 3) and so on. These may be used alone or in combination of two or more. Among these, it is preferably, for example, n-butyltrimethoxy decane, n-decyltrimethoxy decane, hexadecyltrimethoxy decane, n-decyldidecyloxydecane, positive Cetyldifluorenyl decyloxydecane, n-butyltriethoxy sulphur, n-decyltriethoxy sulphur, n-hexadecane triethoxy sulphate, n-decylethyl Diethoxydecane, n-hexadecylethyldiethoxydecane, n-butyltripropoxydecane, n-decyltripropoxydecane, cetyltripropoxylate, and the like. In the film-forming material layer of the transfer film of the present invention, the decane coupling agent is contained in a ratio of 100 parts by weight, preferably 0. 0 0 1 to 1 0 parts by weight, particularly 0 · 0 0 1 . It is preferably 5 parts by weight. When the coupling ratio is less than 0.01 part by weight, the effect of improving the dispersion stability of the glass powder cannot be sufficiently exhibited, and the flexibility of the formed film forming material layer cannot be sufficiently exhibited. On the other hand, if the ratio exceeds 10 parts by weight, when the obtained glass coating composition is preserved, the viscosity will increase with time, and the decane coupling agents will initiate a reaction with each other, resulting in light penetration after firing. The situation of the reason for the decrease in rate occurs. 22 312/Invention Specification (Supplement)/93-07/93110493 1248425 &lt;Plastic Agent&gt; In the composition of the present invention, in order to make the formed film forming material layer to exhibit good flexibility and flammability, it is preferable Contains a plasticizer. The plasticizer is preferably a plasticizer composed of a compound represented by the following formula (3).

(3) (式中，R 2與R 5分別係指相同或互異之碳數1〜3 0烷基； R 3與R 4分別係指相同或互異之亞甲基或碳數2〜3 0伸烷 基；s係指0〜5數值；t係指1〜1 0數值。） 依照具備含有可塑劑之膜形成材料層的轉印膜的話，即 便將其彎曲，仍不致在該膜形成材料層表面上發生微小龜 裂（裂痕），且該轉印膜的柔軟性優越，可輕易地將其捲取 為滾筒狀。 特別係由上式（3 )所示化合物所構成可塑劑，因為將可 利用熱而輕易地分解去除，所以對該膜形成材料層施行燒 成而所獲得介電質層的光穿透率將不致降低。 在上式（3)中，R2或R5所示烷基、及R3或R4所示伸烷基， 可為直鏈狀亦可為分支狀，而且可為飽和基亦可為不飽和 基。 R 2或R 5所不烧基的碳數係設定為1〜3 0 ’最好為2〜2 0 ’ 尤以4〜1 0為佳。 當該烷基的碳數超過3 0之情況時，可塑劑對構成本發 明溶劑的溶解性將降低，將有無法獲得良好可撓性的狀況。 23 312/發明說明書(補件)/93-07/93110493 1248425 上式（3 )所示化合物之具體例，可舉例如：己二酸二丁 酯、己二酸二異丁醋、己二酸二-2-乙基己醋、壬二酸二- 2-乙基己醋、癸二酸二丁酯、己二酸二丁基二乙二醇酯等。 最好η為2〜6所示化合物。 本發明轉印膜之膜形成材料層中，可塑劑含有比率在相 對於玻璃粉末1 0 0重量份之下，最好為0 . 1〜2 0重量份，尤 以0 . 5〜1 0重量份為佳。當可塑劑比率低於0 . 1重量份之情 況時，將有無法充分提昇膜形成材料層可塑性的狀況。反 之，當此比率超過2 0重量份之情況時，採用所獲得組成物 所形成的膜形成材料層黏著性（黏性）將過大，具備此種膜 形成材料層的轉印膜處置性將惡化。 在本發明組成物中，除上述必要成分之外，尚可含有任 意成分之如：黏著性賦予劑、表面張力調整劑、安定劑、消 泡劑等各種添加劑。 &lt;放射線感光性成分〉 本發明之含有無機粒子之組成物，亦可為含有放射線感 光性成分的含放射線感光性含有無機粒子之組成物。該放 射線感光性成分較佳者可例示如：（a )多官能性單體與放射 線聚合起始劑之組合、（b )三聚氰胺樹脂與利用放射線照射 而形成酸的光酸產生劑之組合，上述（a )組合中，特別以多 官能性（甲基）丙烯酸酯與放射線聚合起始劑之組合為佳。 構成放射線感光性成分之多官能性（曱基）丙烯酸酯之 具體例，可舉例如：乙二醇、丙二醇等伸烷二醇之二（曱基） 丙烯酸酯類；聚乙二醇、聚丙二醇等聚伸烷二醇之二（曱基） 24 312/發明說明書(補件)/93-07/93110493 1248425 丙烯酸酯類；二末端羥基聚丁二烯、二末端羥基聚異丙烯、 二末端羥基聚己内酯等二末端羥基化聚合體之二（曱基）丙 烯酸酯類； 甘油、1，2，4 - 丁三醇、三羥曱基烷、四羥曱基烷、季戊 四醇、二季戊四醇等三價以上多元醇之聚（甲基）丙烯酸酯 類；三價以上多元醇之聚伸烷二醇加成物之聚（曱基）丙烯 酸酯類；1，4 -環己二醇、1，4 -苯二醇類等環式多元醇之聚 (曱基）丙烯酸醋類；聚a旨（曱基）丙烯酸S旨、（甲基）丙烯酸 環氧酯、（曱基）丙烯酸胺基曱酸酯、醇酸樹脂（曱基）丙烯 酸酯、矽樹脂（曱基）丙烯酸酯、螺環樹脂（曱基）丙烯酸酯 等寡聚（曱基）丙烯酸類等等。該等可單獨使用，或組合使 用2種以上。 再者，構成放射線感光性成分的放射線聚合起始劑之具 體例，可舉例如：苄、苯偶姻、二苯曱酮、莰醌、2 -羥基-2 -曱基-1-苯基丙：(：完-1-8同、1-經基環己基苯g同、2，2-二曱氧 基-2 -苯基乙醯苯、2 -曱基-[4 ’ -(硫代曱基）苯基]-2 -嗎啉 -1-丙酮、2-苄基-2-二曱胺基-1-(4 -嗎啉苯基）-丁 -1-酮等 羰化合物；偶氮異丁腈、4 -疊氮苯甲醛 (4 - a z i d 〇 b e n z a 1 d e h y d e )等偶氮或疊氮化合物；硫醇二硫化 物等有機硫化物；苯曱醯過氧化物、二第三丁基過氧化物、 第三丁基過氧化氫、氫過氧化物異丙苯（cumene hydro peroxide)、對曱烷過氧化氫等有機過氧化物；1，3_雙（三 氣曱基）-5 - ( 2 ’ -氣笨基）- 1，3 , 5 -三嗉、2 - [ 2 - ( 2 -呋喃基）] 乙烯基]-4, 6-雙（三氣曱基）-1,3,5-三嗉等三鹵化曱烷 25 312/發明說明書(補件)/93-07/93110493 1248425 類；2，2 ’ -雙（2 -氯苯基）4，5，4 ’，5 ’ -四苯基1，2 ’ -聯二咪唑 等咪唑二聚物等。該等可單獨使用，或組合使用2種以上。 含有無機粒子之組成物之一例，若以較佳介電質層形成 用組成物為例的話，無機粒子（玻璃粉末）可例如含有以下 述成分為必要成分的組成物：由氧化錯、氧化侧、氧化石夕、 氧化名弓（P b 0 - B 2 0 3 - S i 0 2 - C a 0系）所構成混合物1 0 0重量份， 黏結樹脂之曱基丙烯酸丁酯/曱基丙烯酸乙基己酯/曱基丙 烤酸經基丙S旨/曱基丙稀酸縮水甘油S旨共聚物5〜3 0重量 份；分散劑之正癸基三曱氧基矽烷0 . 1〜5重量份；可塑劑 之二-2 -壬二酸乙基己酯0 . 1〜1 0重量份；及溶劑之丙二醇 單曱5〜30重量份。 本發明之組成物係將上述無機粒子、黏結樹脂、特定化 合物、溶劑、以及任意成分，採用輥混練機、攪拌機、均 質攪拌機等混練機進行混練便可調製得。 依上述所調製得本發明組成物，係具有適於塗佈之流動 性的糊狀組成物，黏度通常為1，0 0 0〜3 0，0 0 0 m P a · s，最好 為 3, 000〜10, 000 m Pa· s° 本發明組成物特別適用使用於供製造以下詳述轉印膜 (本發明轉印膜）。 再者，本發明組成物亦可適用於先前週知膜形成材料層 之形成方法，即利用網板印刷法等將該組成物直接塗佈於 基板表面上，經使塗膜乾燥而形成膜形成材料層的方法。 &lt;轉印膜&gt; 本發明之轉印膜係適用於p D P構成要件之形成步驟（特 26 312/發明說明書(補件)/93-07/93110493 1248425 別係介電質層之形成步驟）的複合膜，乃具備有將本發明組 成物塗佈於支撐膜上，再藉由使塗膜乾燥而形成的膜形成 材料層。 換句話說，本發明之轉印膜係在支撐膜上形成含有無機 粒子、黏結樹脂、及特定化合物之膜形成材料層而構成。 再者，本發明之轉印膜亦可將後述光阻膜形成於支撐膜 上，再於其上塗佈著本發明組成物，經乾燥而構成者（層積 膜）。 此外，本發明之轉印膜亦可為採用含有放射線感光性無 機粒子組成物所構成的放射線感光性轉印膜。 (1)轉印膜構造： 圖2 A所示係經捲繞成捲筒狀的本發明之轉印膜之概略 剖面圖，圖2 B所示係該轉印膜層構造剖面圖[圖2 A之部分 詳細圖]。 圖2所示轉印膜係本發明轉印膜之一例，使用供形成構 成P D P之介電質層用的複合膜，通常由下述所構成：支撐膜 F 1、形成可剝離此支撐膜F 1表面的膜形成材料層F 2、以 及設計成可輕易剝離此膜形成材料層F 2表面的覆蓋膜 F 3。覆蓋膜F 3乃隨膜形成材料層F 2性質，亦有未使用的 情況。 構成轉印膜之支撐膜F 1，最好具有对熱性與而ί溶劑性， 且具有可撓性的樹脂膜。藉由支撐膜F 1具可撓性，便可採 用輥塗機、刮刀塗佈機等，塗佈糊狀組成物（本發明組成 物），藉此便可形成膜厚均句的膜形成材料層，且可將所形 27 312/發明說明書(補件)/93-07/93110493 1248425 成膜形成材料層依捲繞成捲筒狀之狀態保存、供應。 構成支撐膜F 1的樹脂，可舉例如：聚對苯二曱酸乙二 酯、聚酯、聚乙烯、聚丙烯、聚苯乙烯、聚醯亞胺、聚乙 稀醇（P〇1 y v i n y 1 a 1 c 〇 h ο 1 )、聚氯化乙稀、聚敗化乙烯等 含氟樹脂、尼龍、纖維素等。支撐膜F 1厚度設定為如 20 〜ΙΟΟμηι 〇 構成轉印膜的膜形成材料層F 2係經燒成而形成玻璃燒 結體（介電質層）的層，乃含有必要成分的玻璃粉末（無機粒 子）、黏結樹脂、及特定化合物。 膜形成材料層F 2厚度乃隨玻璃粉末含有率、面板種類 或大小而異，例如設定為5〜200μπι，最好為10〜ΙΟΟμίϋ。當 此厚度低於5 μ in之情況時，最後所形成介電質層的膜厚過 小，無法確保預期的介電特性。通常，若此厚度為5〜2 0 0 μ m 的話，便可充分確保大型面板所要求的介電質層膜厚。 構成轉印膜的覆蓋膜F 3係供保護膜形成材料層F 2表面 (與玻璃基板間之接觸面）用的薄膜。最好此覆蓋膜F 3亦屬 於具有可撓性的樹脂膜。形成覆蓋膜F 3的樹脂，可例示如 形成支撐膜F 1的樹脂。覆蓋膜F 3厚度設定為如2 0〜1 0 0 μιιι。 (1 )轉印膜之製造方法 本發明之轉印膜係在支撐膜（F 1 )上形成膜形成材料層 (F 2 )，並藉由在該膜形成材料層（F 2 )上設置（壓接）覆蓋膜 (F 3 )便可製得。 膜形成材料層之形成方法可例如：將含有無機粒子、黏 結樹脂、分散劑、可塑劑及溶劑的本發明組成物，塗佈於 28 312/發明說明書(補件)/93-07/93 ] 10493 1248425 支撐膜上，經乾燥塗膜後，去除上述部分（或全部）溶劑的 方法。 將本發明組成物塗佈於支撐膜上的方法，就從可效率佳 地形成膜厚較大（如2 Ο μ m以上）、膜厚厚度均勻性優越之 塗膜的觀點而言，較佳的方法可舉例如：利用輥塗機施行塗 佈的方法、刮漿刀法等利用刮刀塗佈機的塗佈方法、利用 簾塗佈機進行塗佈的方法、利用現塗佈機施行塗佈的方法 等等。 再者，最好對經塗佈本發明組成物的支撐膜表面施行脫 膜處理。藉此便可在轉印膜形成材料層之後，輕易地從該 膜形成材料層上剝離支撐膜。 支撐膜上所形成依本發明組成物所構成塗膜，經乾燥而 去除部分（或全部）溶劑，而形成構成轉印膜的膜形成材料 層。利用本發明組成物所構成塗膜的乾燥條件，例如設定 為4 0〜1 5 0 °C中、0 . 1〜3 0分鐘程度。經乾燥後的溶劑殘存比 率（膜形成材料層中之溶劑含有比率），通常設定在1 0重量 %以下，就從使膜形成材料層發揮對基板的黏著性、及適度 的形狀保持性觀點而言，最好為0 . 1〜5重量％。 最好亦對在依上述所形成膜形成材料層上，所設置（通 常為熱壓接）的覆蓋膜表面施行脫膜處理。藉此，在轉印膜 形成材料層之前，便可輕易地從該膜形成材料層剝離覆蓋 膜。 (1 )膜形成材料層之轉印（轉印膜之使用方法）： 支撐膜上之膜形成材料層，乃一次轉印於基板表面上。 312/發明說明書(補件)/93-07/93110493 29 1248425 因為依照本發明轉印膜的話，藉由此種簡單地操作，便可 確實地在玻璃基板上形成膜形成材料層，所以可達介電質 層等P D P構成要件之形成步驟中的製程改善（高效率化）效 果，而且可達提昇所形成構成要件品質（例如：突顯介電質 層中安定的介電特性）的功效。 &lt; P D P之製造方法（1 )(介電質層之形成）&gt; 本發明的P D P之製造方法（1 )係包含有.·將構成本發明轉 印膜之膜形成材料層，轉印於基板表面上，再藉由對經轉 印的膜形成材料層施行燒成，而在上述基板表面上形成介 電質層的步驟。 若例示依如圖2所示構造之轉印膜，形成的膜形成材料 層之轉印步驟一例，則如下述： 1 .將捲繞於捲筒狀態下的轉印膜，裁剪為配合基板面積 的大小。 2 ·從經裁剪過之轉印膜從膜形成材料層（F 2 )表面剝離 覆蓋膜（F 3 )之後，再重疊轉印膜俾使基板表面抵接膜形成 材料層（F 2 )表面。 3 .在重疊於基板上的轉印膜上移動加熱輥而熱壓接。 4 ·從經熱壓接而固定於基板上的膜形成材料層（F 2 )，剝 離去除支撐膜（F 1 )。 藉由如上述操作，支撐膜（F 1 )上的膜形成材料層（F 2 )便 轉印於基板上。其中，轉印條件係設定為如：加熱輥表面溫 度6 0〜1 2 0 °C 、由加熱棍所產生的報壓1〜5 k g / c in 2、加熱輥 移動速度Ο · 2〜1 Ο · 0 m /分。如此般之操作（轉印步驟）係可藉 30 312/發明說明書(補件)/93-07/93110493 1248425 由疊合裝置進行。另外，基板亦可先預熱，預熱溫度可設 定為如4 0〜1 0 0 °C 。 經轉印形成於基板表面上的膜形成材料層（F 2 )，經燒成 便形成無機燒結體（介電質層）。其中，燒成方法可舉例如： 將經轉印形成膜形成材料層（F 2 )的基板，配置於高溫環境 下的方法。藉此，膜形成材料層（F 2 )中所含有機物質（如： 黏結樹脂、殘留溶劑、分散劑、可塑劑、各種添加劑）將被 分解而去除，無機粒子則將熔融並進行燒結。燒成溫度亦 隨基板熔融溫度、膜形成材料層中之構成物質等而不同， 例如設定為3 0 0〜8 0 0 °C ，尤以4 0 0〜6 0 0 °C為佳。 &lt; P D P之製造方法（2 )(利用光阻法之構成要件的形成）&gt; 本發明的P D P之製造方法（2 )係包含有.·將構成本發明轉 印膜之膜形成材料層，轉印於基板上，再經轉印的膜形成 材料層上形成光阻膜，並對該光阻膜施行曝光處理而形成 光阻圖案的潛像，對該光阻膜施行顯影處理俾使光阻圖案 顯影化，然後再對該膜形成材料層施行蝕刻處理，而形成 對應著光阻圖案的圖案層，藉由對該圖案層施行燒成處 理，而形成選擇自分隔壁、電極、電阻體、介電質層、螢 光體、彩色濾光片、及黑矩陣中的構成要件之步驟。 或者，將光阻膜、與由本發明之含有無機粒子之組成物 所獲得膜形成材料層的層積膜，形成於支撐膜上，再將支 撐膜上所形成層積膜轉印於基板上，對構成該層積膜的光 阻膜施行曝光處理而形成光阻圖案的潛像，對該光阻膜施 行顯影處理俾使光阻圖案顯影化，然後再對該膜形成材料 31 3丨2/發明說明書(補件)/93-07/93110493 1248425 層施行蝕刻處理，而形成對應著光阻圖案的圖案層，藉由 對該圖案層施行燒成處理，而形成選擇自分隔壁、電極、 電阻體、介電質層、螢光體、彩色濾光片、及黑矩陣中的 構成要件之步驟。 以下，針對將PDP構成要件的「分隔壁」，形成於背面 基板上之表面的方法進行說明。在此方法中，藉由：〔1〕 膜形成材料層之轉印步驟、〔2〕光阻膜之形成步驟、〔3〕 光阻膜之曝光步驟、〔4〕光阻膜之顯影步驟、〔5〕膜形成 材料層之蝕刻步驟、〔6〕利用分隔壁圖案之燒成步驟，而 在基板表面上形成分隔壁。 圖3與圖4所示係供形成分隔壁之一連串步驟的概略剖 面圖。在圖3與圖4中，11係玻璃基板，在此玻璃基板上， 等間隔排列著供產生電漿用的電極1 2，並在玻璃基板1 1 表面上將介電質層1 3形成被覆著電極1 2的狀態。 另外，在本發明中，「將膜形成材料層轉印於基板上」 的態樣，除如上述轉印於玻璃基板1 1表面的態樣之外，涵 蓋轉印於上述介電質層1 3表面的態樣。 (1 )膜形成材料層之轉印步驟： 若例示膜形成材料層之轉印步驟一例的話，便如下述： 在剝離轉印膜的覆蓋膜（未圖示）之後，如圖3所示，在 介電質層1 3表面上，將轉印膜2 0重疊為抵接膜形成材料 層2 1表面的狀態，將此轉印膜2 0利用加熱輥等而熱壓接 之後，再從膜形成材料層2 1上剝離去除支撐膜2 2。藉此， 便如圖3 C所示，形成介電質層1 3表面上轉印膜形成材料 32 312/發明說明書(補件)/93-07/93110493 1248425 層2 1並密接的狀態。其中，轉印條件係設定為如：加熱輥 表面溫度8 0〜1 4 0 °C 、由加熱輥所產生的輥壓1〜5 k g / c m 2、 加熱輥移動速度Ο . 1〜1 Ο . 0 m /分。另外，玻璃基板1 1亦可 先預熱，預熱溫度可設定為如4 0〜1 0 0 °C 。 (1 )光阻膜形成步驟： 在此步驟中，如圖3 D所示，在經轉印膜形成材料層2 1 的表面上形成光阻膜3 1。構成此光阻膜3 1的光阻，可為 正型光阻亦可為負型光阻中任一種。 光阻膜3 1係利用如網板印刷法、輥塗佈法、旋轉塗佈 法、流塗法等各種方法塗佈著光阻之後，經將塗膜施行乾 燥之後便可形成。其中，塗膜之乾燥溫度通常設定為 6 0〜1 3 0 °C程度。 再者，亦可藉由將支撐膜上所形成光阻膜，轉印於膜形 成材料層2 1表面上而形成。依照此種形成方法的話，便可 減少光阻膜之形成步驟數，且因為所獲得光阻的膜厚均勻 性較優越，所以可均勻地對施行該光阻膜的顯影處理及膜 形成材料層之蝕刻處理，所形成分隔壁高度與形狀將形成 均勻狀態。 光阻膜31膜厚通常設定為0.1〜40μιη，最好0.5〜20μη]。 (1 )光阻膜曝光步驟： 在此步驟中，如圖3 Ε所示，在膜形成材料層2 1上所形 成光阻膜3 1表面上，隔著曝光用遮罩Μ，選擇性照射（曝 光）紫外線等放射線，而形成光阻圖案的潛像。在同圖中， ΜΑ與MB分別係指曝光用遮罩Μ中的光穿透部與遮光部。 33 312/發明說明書(補件)/93-07/93110493 1248425 其中，紫外線照射裝置並無特別限制，可使用上述光微 影法中所使用的紫外線照射裝置、製造半導體及液晶顯示 裝置時所使用的曝光裝置等。 另外，當藉由轉印光阻膜而形成之情況時，最好在光阻 膜上所被覆支撐膜尚未剝離的狀態下，施行曝光步驟。 (1 )光阻膜顯影步驟： 在此步驟中，藉由對經曝光過的光阻膜施行顯影處理， 俾使光阻圖案（潛像）顯影化。 其中，顯影處理條件可配合光阻膜3 1種類等，適當選 擇顯影液種類、組成、濃度、顯影時間、顯影溫度、顯影 方法（例如：浸潰法、搖晃法、淋塗法、噴塗法、槳式法）、 顯影裝置等。 經此顯影步驟，便如圖4 F所示，形成由光阻殘留部3 5 A、 光阻去除部35B所構成光阻圖案35(對應著曝光用遮罩Μ 的圖案）。 此光阻圖案3 5係具有下一步驟（蝕刻步驟）中的蝕刻遮 罩作用，光阻殘留部3 5 Α的構成材料（經光硬化的光阻）， 必須為對钱刻液的溶解速度較小於膜形成材料層2 1構成 材料。 (1 )膜形成材料層之餘刻步驟： 在此步驟中，對膜形成材料層施行蝕刻處理，而形成對 應著光阻圖案的分隔壁圖案層。 換句話說，如圖4 G所示，在膜形成材料層21中，將光 阻圖案3 5對應著光阻去除部3 5 B的部分溶解於蝕刻液中， 34 312/發明說明書(補件)/93-07/93110493 1248425 俾選擇性去除。其中，圖4G所示係蝕刻處理中的狀態。 然後，若繼續施行蝕刻處理的話，便如圖4H所示，將 膜形成材料層2 1中的既定部分完全去除，而裸露出介電質 層1 3。藉此便形成由由材料層殘留部2 5 A、材料層去除部 2 5 B所構成的分隔壁圖案層2 5。 其中，蝕刻處理條件可配合膜形成材料層2 1種類等， 而適當地選擇蝕刻液種類、組成、濃度、處理時間、處理 溫度、處理方法（例如：浸潰法、搖晃法、淋塗法、噴塗法、 槳式法）、處理裝置等。 另外，蝕刻液為能使用如同顯影步驟中所使用顯影液相 同的溶液，藉由選擇光阻膜3 1與膜形成材料層2 1的種類， 便可連續地實施顯影步驟與蝕刻步驟，可達利用步驟簡單 化而提昇製造效率的效果。 其中，構成光阻圖案3 5的光阻殘留部3 5 A，最好在蝕刻 處理之際將逐漸溶解，在形成分隔壁圖案層2 5的階段（蝕 刻處理結束時）被完全去除。 另外，即便蝕刻處理後部分（或全部）殘留光阻殘留部 3 5 A的話，該光阻殘留部3 5 A將依接著的燒成步驟而去除。 (1 )分隔壁圖案層之燒成步驟： 在此步驟中，對分隔壁圖案層2 5施行燒成處理而形成 分隔壁。藉此，材料層殘留部2 5 A中的有機物質將燒失而 形成分隔壁，在如圖4 I所示，於介電質層1 3表面形成分 隔壁4 0的面板材料5 0中，便將利用分隔壁4 0所區隔的空 間（源自材料層去除部2 5 B的空間），而形成電漿作用空間。 35 312/發明說明書(補件)/93-07/93110493 1248425 其中，燒成處理溫度必須為材料層殘留部2 5 A的有機物質 被燒失的溫度，通常為4 0 0〜6 0 0 °C 。此外，燒成時間通常 設為1 0〜9 0分鐘。 &lt; P D P之製造方法（3 )(利用光阻法之較佳實施態樣）&gt; 本發明的PDP之製造方法，並不僅限於圖3與圖4所示 方法。 其中，供形成P D P構成要件用的其他較佳方法（P D P之製 造方法③），可舉例如下述（1 )〜（3 )步驟的形成方法。 (1 )藉由在支撐膜上形成光阻膜之後，在該光阻膜上塗 佈本發明之含有無機粒子組成物，經乾燥而層積形成膜形 成材料層。其中，當形成光阻膜與膜形成材料層之際，可 使用輥塗機等，藉此便可在支撐膜上形成膜厚均勾性優越 的層積膜。 (2 )將支撐膜上所形成的光阻膜、與膜形成材料層之層 積膜，轉印於基板上。其中，轉印條件係如同上述「膜形 成材料層之轉印步驟」中的條件。 (3 )施行如同上述「光阻膜之曝光步驟」、「光阻膜之顯 影步驟」、「膜形成材料層之蝕刻步驟」、及「分隔壁圖案層 之燒成步驟」。此時，如前所述，最好光阻膜的顯影液、與 膜形成材料層的蝕刻液設為相同溶液，俾可連續地實施「光 阻膜之顯影步驟」與「膜形成材料層之蝕刻步驟」。 依照如上述方法的話，因為膜形成材料層與光阻膜係一次 轉印於基板上，所以可因步驟簡單化而更加提昇製造效率。 &lt; P D P之製造方法（4 )(採用放射線感光性轉印膜之構成要 36 3 12/發明說明書(補件)/93-07/93110493 1248425 件的形成）&gt; 本發明的P D P之製造方法（4 )係包含有：將構成本發明放 射線感光性轉印膜的膜形成材料層，轉印於基板上，再對 該膜形成材料層施行曝光處理而形成光阻圖案的潛像，對 該膜形成材料層施行顯影處理而形成圖案層，藉由對該圖 案層施行燒成處理，而形成選擇自分隔壁、電極、電阻體、 介電質層、螢光體、彩色濾光片、及黑矩陣中的構成要件 之步驟。 在此方法中，若以例如分隔壁之形成方法為例的話，在 上述「膜形成材料層之轉印步驟」之後，便依據「光阻膜 之曝光步驟」、「光阻膜之顯影步驟」的條件，形成圖案層， 然後再利用「分隔壁圖案之燒成步驟」，在基板表面上形成 分隔壁。 在上述P D P之製造方法（1 )〜（4 )各步驟說明中，雖針對 形成PDP構成要件的「分隔壁」之方法進行說明，但是亦 可依據此方法，形成構成PDP的電極、電阻體、介電質層、 螢光體、彩色濾光片、及黑矩陣等。 &lt;實施例&gt; 以下，針對本發明實施例進行說明，惟本發明並不僅限 於該等。另夕卜，在下述中，「份」係指「重量份」。 (實施例1 ) C 1 )玻璃糊狀物組成物（含有無機粒子之組成物）的調製： 將玻璃粉末（無機粒子）之由氧化鉛、氧化硼、氧化矽、 氧化妈（P b 0 - B 2 0 3 - S i 0 2 - C a 0系）所構成混合物（軟化點5 6 0 37 312/發明說明書(補件)/93-07/93110493 1248425 °C ) 1 Ο 0份，黏結樹脂之甲基丙烯酸丁酯（B M A ) / 2 -甲基丙烯 酸乙基己酯（EHMA)/2-甲基丙烯酸羥基丙酯（HPMA)/甲基丙 婦酸縮水甘油S旨（GMA)共聚合體（重量比30/60/5/5、重量 平均分子量1 0 5，0 0 0 ) 1 7份，及分散劑之正癸基三曱氧基矽 烷1 . 0份，及可塑劑之二-2 -壬二酸二乙基己S旨2 . 5份，以 及溶劑之丙二醇單甲醚7. 3份、3 -乙氧基丙酸乙酯1 1 . 5 份，採用分散機進行混練，而調製黏度1，6 0 0 mPa · s ( 2 0 r p m、東機產業製、T V - 3 0式黏度計）的本發明組成物。 (2 )轉印膜之製造及評估（可撓性及處置性）： 將上述（1 )所調製本發明組成物，採用刮刀塗佈機塗佈 於預先施行脫膜處理過之由聚對苯二曱酸乙二酯（P E T )所 構成支樓膜（寬度400mm、長度30m、厚度38μπι)上，將所 形成塗膜在1 0 0 °C中施行5分鐘乾燥處理而去除溶劑，藉 此便在支撐膜上形成厚度9 0 μ m的膜形成材料層。其次， 在該膜形成材料層上，貼覆著預先施行脫膜處理過之由 PET所構成覆蓋膜（寬度400mm、長度30m、厚度38μπι)， 藉此便製得具有如圖2所示構造的本發明轉印膜。 所獲得轉印膜具有柔軟性，可輕易地施行捲取成捲筒狀 的操作。此外，即便將此轉印膜彎折，在膜形成材料層表 面上仍不致發生裂痕（彎曲龜裂）情況，該膜形成材料層屬 於具優越可撓性。 再者，從此轉印膜上剝離覆蓋膜，並將該轉印膜（支撐 膜與膜形成材料層之層積膜），在未加壓下重疊成膜形成材 料層表面抵接於玻璃基板表面的狀態，其次，嘗試從玻璃 38 312/發明說明書(補件)/93-07/93110493 1248425 基板表面剝落該轉印膜，結果該膜形成材料層顯示出對玻 璃基板適度的黏著性，而且可在該膜形成材料層上不致引 起凝聚破壞的情況下，剝落轉印膜，具有轉印膜用的優越 處置性（處理性）。 (3 )膜形成材料層之轉印： 從依上述（2 )所獲得轉印膜上剝落覆蓋膜之後，在2 1吋 面板用玻璃基板表面（匯流電極之固定面）上，將該轉印膜 (支撐膜與膜形成材料層的層積膜）重疊成抵接著膜形成材 料層表面的狀態，對此轉印膜利用加熱輥施行熱壓接。其 中，壓接條件設定為：加熱輥表面溫度9 0 °C 、輥壓 2 k g / c m2、加熱輥移動速度0 . 8 m /分。 待熱壓接處理結束後，從玻璃基板表面上所固定（加熱 黏著）的膜形成材料層上，剝離去除支撐膜，便完成該膜形 成材料層的轉印。 在此轉印步驟中，當剝離支撐膜之時，膜形成材料層不 致發生凝聚破壞情況，該膜形成材料層具有十分大的膜強 度。而且，經轉印過的膜形成材料層，對玻璃基板表面具 有良好的黏著性。 (4 )膜形成材料層之燒成（介電質層之形成）： 將經上述（3 )而轉印形成著膜形成材料層的玻璃基板， 配置於燒成爐内，依每分鐘1 0 °C的比例昇溫至爐内溫度 5 7 0 °C為止之後，再於5 7 0 °C中施行1 0分鐘燒成處理，便 在玻璃基板表面上，形成由玻璃燒結體所構成介電質層。 經測量此介電質層膜厚（平均膜厚與公差），結果在 39 312/發明說明書(補件)/93-07/93110493 1248425 4 4μπl土0.4μπl範圍内，屬於膜厚均勻性優越者。 此外，針對所獲得介電質表面，採用非接觸式膜厚計（菱 光公司製、Ν Η - 3 )施行3次元測量，並依據J I S規格（B 0 6 0 1 ) 求取表面粗糙度（Ra、Ry、Rz)，結果Ra二0.06μπι、(3) (wherein R 2 and R 5 each represent the same or mutually different carbon number of 1 to 30 alkyl; R 3 and R 4 respectively mean the same or mutually different methylene or carbon number 2~ 30 is an alkyl group; s means a value of 0 to 5; t means a value of 1 to 10.) According to a transfer film having a film forming material layer containing a plasticizer, even if it is bent, it is not in the film. A micro crack (crack) occurs on the surface of the formed material layer, and the transfer film is excellent in flexibility, and can be easily wound into a roll shape. In particular, a plasticizer composed of the compound represented by the above formula (3) is easily decomposed and removed by heat, so that the film forming material layer is fired to obtain a light transmittance of the dielectric layer. Not to reduce. In the above formula (3), the alkyl group represented by R2 or R5 and the alkylene group represented by R3 or R4 may be linear or branched, and may be an unsaturated group or an unsaturated group. The carbon number of the non-burning group of R 2 or R 5 is set to be 1 to 3 0 ', preferably 2 to 2 0 ', particularly preferably 4 to 10 0. When the carbon number of the alkyl group exceeds 30, the solubility of the plasticizer in the solvent constituting the present invention is lowered, and there is a case where good flexibility cannot be obtained. 23 312/Inventive Manual (Supplement)/93-07/93110493 1248425 Specific examples of the compound represented by the above formula (3) include dibutyl adipate, diisobutyl acetonate, and adipic acid. Di-2-ethylhexyl vinegar, di-2-ethylhexanoic acid sebacate, dibutyl sebacate, dibutyl diethylene glycol adipate, and the like. Preferably, η is a compound represented by 2 to 6. In the film forming material layer of the transfer film of the present invention, the plasticizer content ratio is less than 100 parts by weight relative to the glass powder, preferably 0.1 to 2 parts by weight, particularly 0.5 to 1 0 weight. It is better. When the ratio of the plasticizer is less than 0.1 part by weight, there is a case where the plasticity of the film forming material layer cannot be sufficiently improved. On the other hand, when the ratio exceeds 20 parts by weight, the adhesiveness (viscosity) of the film-forming material layer formed by using the obtained composition will be excessively large, and the handling property of the transfer film having such a film-forming material layer will deteriorate. . In the composition of the present invention, in addition to the above-mentioned essential components, various additives such as an adhesion imparting agent, a surface tension adjusting agent, a stabilizer, and a defoaming agent may be contained. &lt;Radiation-sensitive component&gt; The inorganic particle-containing composition of the present invention may be a composition containing radiation-sensitive inorganic particles containing a radiation-sensitive component. The radiation photosensitive component is preferably a combination of (a) a combination of a polyfunctional monomer and a radiation polymerization initiator, and (b) a melamine resin and a photoacid generator which forms an acid by irradiation with radiation, (a) The combination is particularly preferably a combination of a polyfunctional (meth) acrylate and a radiation polymerization initiator. Specific examples of the polyfunctional (fluorenyl) acrylate constituting the radiation photosensitive component include bis(indenyl) acrylates of alkylene glycols such as ethylene glycol and propylene glycol; polyethylene glycol and polypropylene glycol; Iso-alkylene glycol bis(indenyl) 24 312 / invention specification (supplement) /93-07/93110493 1248425 acrylates; two-terminal hydroxy polybutadiene, two-terminal hydroxy polyisopropene, two terminal hydroxyl groups a bis(indenyl) acrylate of a two-terminal hydroxylated polymer such as polycaprolactone; glycerin, 1,2,4-butanetriol, trihydroxydecalkane, tetrahydrostannyl, pentaerythritol, dipentaerythritol, etc. Poly(meth)acrylates of trivalent or higher polyhydric alcohols; poly(fluorenyl)acrylates of polyalkylene glycol adducts of trivalent or higher polyhydric alcohols; 1,4-cyclohexanediol, 1, Poly(indenyl)acrylic acid vinegar of a cyclic polyol such as 4-benzenediol; poly(A) acrylate (meth) acrylate, (meth) acrylate, (mercapto) acryl amide Ester, alkyd (mercapto) acrylate, decyl acrylate, spiro tree (Yue-yl) acrylate oligomer (Yue-yl) acrylic and the like. These may be used alone or in combination of two or more. In addition, specific examples of the radiation polymerization initiator which constitutes the radiation photosensitive component include benzyl, benzoin, benzophenone, anthracene, 2-hydroxy-2-indenyl-1-phenylpropene. :(:End-1-8 with, 1-ylcyclohexylbenzene g, 2,2-dimethoxy-2-phenylethyl benzene, 2- fluorenyl-[4 '-(thioguanidine) a carbonyl compound such as phenyl]-2-morpholine-1-propanone or 2-benzyl-2-didecylamino-1-(4-morpholinylphenyl)-butan-1-one; azo Azo or azide compounds such as butyronitrile, 4-azidbenzaldehyde (4 - azid 〇benza 1 dehyde); organic sulfides such as thiol disulfides; benzoquinone peroxide, di-tert-butyl peroxide , tert-butyl hydroperoxide, cumene hydro peroxide, organic peroxides such as decane hydroperoxide; 1,3_bis(triseodecyl)-5 - ( 2 '-gas base)-1,3,5-triazine,2-[2-(2-furyl)]vinyl]-4,6-bis(tris)-,3,5 - Sancha et al. trihalide decane 25 312 / invention specification (supplement) / 93-07/93110493 1248425 class; 2, 2 ' - bis (2-chlorophenyl) 4, 5, 4 ',5 '-Imidazole dimer such as tetraphenyl 1,2 '-biimidazole, etc. These may be used singly or in combination of two or more. Examples of the composition containing inorganic particles are preferably In the case of the composition for forming an electric layer, the inorganic particles (glass powder) may, for example, contain a composition having the following components as an essential component: oxidative error, oxidized side, oxidized oxide, and oxidized name bow (P b 0 - B) 2 0 3 - S i 0 2 - C a 0 is a mixture of 10 parts by weight of the mixture, butyl methacrylate / ethyl hexyl acrylate / decyl propylene acrylate / mercapto-acrylic acid glycidyl S-copolymer 5 to 30 parts by weight; dispersing agent n-decyltrimethoxy decane 0.1 to 5 parts by weight; plasticizer bis-2 -sebacic acid ethyl The hexyl ester is 0.1 to 10 parts by weight; and the solvent is propylene glycol monoterpene 5 to 30 parts by weight. The composition of the present invention is a roller kneading machine using the above inorganic particles, a binder resin, a specific compound, a solvent, and an optional component. Mixing machine such as mixer, homomixer, etc. can be prepared by mixing. The composition of the invention is a paste composition having a fluidity suitable for coating, and the viscosity is usually 1,0 0 0 to 3 0,0 0 0 m P a · s, preferably 3,000 to 10,000. m Pa· s The composition of the present invention is particularly suitable for use in the production of a transfer film (transfer film of the present invention) as described in detail below. Further, the composition of the present invention can also be applied to a method for forming a layer of a film forming material which is known in the prior art, that is, the composition is directly coated on the surface of the substrate by a screen printing method or the like, and the film is formed by drying the film to form a film. Method of material layer. &lt;Transfer film&gt; The transfer film of the present invention is suitable for the formation step of the p DP constituent element (Specially, the steps of forming the dielectric layer of the structure of the DP DP) (Special No. 26 312 / Invention Specification (Supplement) / 93-07/93110493 1248425 The composite film is provided with a film forming material layer formed by applying the composition of the present invention to a support film and drying the coating film. In other words, the transfer film of the present invention is formed by forming a film forming material layer containing inorganic particles, a binder resin, and a specific compound on a support film. Further, the transfer film of the present invention may be formed by forming a photoresist film to be described later on a support film, and then coating the composition of the present invention thereon and drying it (layered film). Further, the transfer film of the present invention may be a radiation photosensitive transfer film comprising a composition comprising a radiation-sensitive inorganic particle. (1) Transfer film structure: Fig. 2A is a schematic cross-sectional view of the transfer film of the present invention wound in a roll shape, and Fig. 2B is a cross-sectional view showing the structure of the transfer film layer [Fig. 2 Partial detail of A]. The transfer film shown in Fig. 2 is an example of a transfer film of the present invention, and a composite film for forming a dielectric layer constituting a PDP is used, which is generally composed of a support film F1 and a peelable support film F. The film forming material layer F 2 of the surface 1 and the cover film F 3 which is designed to easily peel off the surface of the film forming material layer F 2 . The cover film F 3 is a property of the film forming material layer F 2 and there are cases where it is not used. The support film F1 constituting the transfer film preferably has a resin film which is heat-sensitive and solvent-soluble and has flexibility. By the flexibility of the support film F1, a paste-like composition (the composition of the present invention) can be applied by a roll coater, a knife coater or the like, whereby a film-forming material having a uniform film thickness can be formed. The layer 27 312 / invention specification (supplement) / 93-07 / 93110493 1248425 film forming material layer can be stored and supplied in a state of being wound into a roll. Examples of the resin constituting the support film F 1 include polyethylene terephthalate, polyester, polyethylene, polypropylene, polystyrene, polyimine, and polyethylene (P〇1 yviny 1). a 1 c 〇h ο 1 ), polyvinyl chloride, polyfluorinated ethylene and other fluorine-containing resins, nylon, cellulose, and the like. The thickness of the support film F 1 is set to 20 mm to ΙΟΟμηι 〇 The film forming material layer F 2 constituting the transfer film is a layer which is fired to form a glass sintered body (dielectric layer), and contains a glass powder of an essential component (inorganic Particles), binder resins, and specific compounds. The thickness of the film forming material layer F 2 varies depending on the glass powder content, the type or size of the panel, and is, for example, 5 to 200 μm, preferably 10 to ΙΟΟμίϋ. When the thickness is less than 5 μin, the film thickness of the last formed dielectric layer is too small to secure the desired dielectric characteristics. In general, if the thickness is 5 to 200 μm, the thickness of the dielectric layer required for a large panel can be sufficiently ensured. The cover film F 3 constituting the transfer film is a film for providing a surface (contact surface with the glass substrate) of the protective film forming material layer F 2 . Preferably, the cover film F 3 is also a flexible resin film. The resin forming the cover film F 3 can be exemplified by a resin forming the support film F 1 . The thickness of the cover film F 3 is set to be, for example, 2 0 to 1 0 0 μιιι. (1) Method for Producing Transfer Film The transfer film of the present invention forms a film forming material layer (F 2 ) on the support film (F 1 ) and is provided on the film forming material layer (F 2 ) ( Crimp) the cover film (F 3 ) can be obtained. The method for forming a film forming material layer can, for example, apply the composition of the present invention containing inorganic particles, a binder resin, a dispersing agent, a plasticizer, and a solvent to 28 312/invention specification (supplement)/93-07/93] 10493 1248425 A method of removing some (or all) of the above solvent on a support film after drying the film. The method of applying the composition of the present invention to a support film is preferably from the viewpoint of efficiently forming a coating film having a large film thickness (e.g., 2 Ο μ m or more) and a film thickness uniformity superiority. The method may be, for example, a coating method by a roll coater, a coating method using a knife coater such as a doctor blade method, a method of coating by a curtain coater, or a coating using a current coater. Method and so on. Further, it is preferred that the surface of the support film coated with the composition of the present invention is subjected to a release treatment. Thereby, the support film can be easily peeled off from the film forming material layer after the transfer film forming material layer. A coating film formed of the composition of the present invention formed on the support film is dried to remove part (or all) of the solvent to form a film forming material layer constituting the transfer film. The drying conditions of the coating film formed by the composition of the present invention are, for example, set to a temperature of from 40 to 150 ° C and from 0.1 to 30 minutes. The solvent remaining ratio (the solvent content ratio in the film forming material layer) after the drying is usually set to 10% by weight or less, and the film forming material layer exhibits adhesion to the substrate and moderate shape retention.言, preferably 0. 1~5 wt%. Preferably, the surface of the cover film (usually thermocompression bonded) is subjected to a release treatment on the layer of the film-forming material formed as described above. Thereby, the cover film can be easily peeled off from the film forming material layer before the transfer film forming material layer. (1) Transfer of film forming material layer (method of using transfer film): The film forming material layer on the support film is primarily transferred onto the surface of the substrate. 312/Invention Manual (Supplement)/93-07/93110493 29 1248425 Since the film is formed in accordance with the present invention, a film forming material layer can be surely formed on the glass substrate by such a simple operation. The process improvement (high efficiency) effect in the formation step of the PDP constituent elements such as the dielectric layer, and the effect of improving the quality of the constituent elements formed (for example, highlighting the dielectric properties in the dielectric layer). &lt;Production Method (1) of PDP (Formation of Dielectric Layer)&gt; The method (1) for producing a PDP of the present invention comprises: transferring a film forming material layer constituting the transfer film of the present invention to A step of forming a dielectric layer on the surface of the substrate by firing the transferred film forming material layer on the surface of the substrate. An example of the transfer process of the formed film forming material layer by the transfer film constructed as shown in FIG. 2 is as follows: 1. The transfer film wound in a roll state is cut into a mating substrate area. the size of. 2. After the cover film (F 3 ) is peeled off from the surface of the film forming material layer (F 2 ) by the cut transfer film, the transfer film is superposed so that the surface of the substrate abuts against the surface of the film forming material layer (F 2 ). 3. The heat roller is moved on the transfer film superposed on the substrate to be thermocompression bonded. 4. The film forming material layer (F 2 ) is fixed to the substrate by thermocompression bonding, and the support film (F 1 ) is peeled off. By the above operation, the film forming material layer (F 2 ) on the support film (F 1 ) is transferred onto the substrate. Wherein, the transfer condition is set to, for example, the surface temperature of the heating roller is 6 0 to 1 2 0 ° C, the pressure of the pressure generated by the heating roller is 1 to 5 kg / c in 2, the moving speed of the heating roller is Ο · 2 to 1 Ο · 0 m / min. Such a procedure (transfer step) can be carried out by a laminating device by means of a 30 312/invention specification (supplement)/93-07/93110493 1248425. In addition, the substrate may be preheated first, and the preheating temperature may be set to, for example, 40 to 1 0 0 °C. The film forming material layer (F 2 ) formed on the surface of the substrate is transferred, and an inorganic sintered body (dielectric layer) is formed by firing. Among them, the firing method may be, for example, a method in which a substrate on which a film forming material layer (F 2 ) is transferred and transferred is placed in a high temperature environment. Thereby, the organic substances (e.g., binder resin, residual solvent, dispersant, plasticizer, various additives) contained in the film forming material layer (F 2 ) are decomposed and removed, and the inorganic particles are melted and sintered. The firing temperature also differs depending on the melting temperature of the substrate, the constituent material in the film forming material layer, and the like, and is set to, for example, 300 to 800 ° C, particularly preferably 4 0 0 to 60 ° C. &lt;Production method of PDP (2) (Formation of constituent elements by photoresist method)&gt; The method (2) for producing PDP of the present invention includes a film forming material layer constituting the transfer film of the present invention. Transferring on the substrate, forming a photoresist film on the transferred film forming material layer, exposing the photoresist film to a latent image of the photoresist pattern, and developing the photoresist film to make the light The resist pattern is developed, and then the film forming material layer is subjected to an etching treatment to form a pattern layer corresponding to the photoresist pattern, and the pattern layer is subjected to a firing treatment to form a selected layer, an electrode, a resistor, and The steps of the dielectric layer, the phosphor, the color filter, and the constituent elements in the black matrix. Alternatively, a photoresist film and a laminated film of the film forming material layer obtained from the inorganic particle-containing composition of the present invention are formed on the support film, and the laminated film formed on the support film is transferred onto the substrate. The photoresist film constituting the laminated film is subjected to an exposure treatment to form a latent image of the photoresist pattern, and the photoresist film is subjected to development processing to develop a photoresist pattern, and then the film forming material 31 3丨2/ SUMMARY OF THE INVENTION (Supplement) /93-07/93110493 1248425 The layer is subjected to an etching treatment to form a pattern layer corresponding to the photoresist pattern, and the pattern layer is subjected to a firing treatment to form a selected wall, an electrode, and a resistor. The steps of the constituent elements in the dielectric layer, the phosphor, the color filter, and the black matrix. Hereinafter, a method of forming a "partition wall" of a PDP constituent element on the surface on the back substrate will be described. In this method, by: [1] a film forming material layer transfer step, [2] a photoresist film forming step, [3] a photoresist film exposure step, [4] a photoresist film developing step, [5] An etching step of the film forming material layer, and [6] a firing step using a partition wall pattern to form a partition wall on the surface of the substrate. 3 and 4 are schematic cross-sectional views showing a series of steps for forming a partition wall. In Fig. 3 and Fig. 4, an 11-type glass substrate is provided on which an electrode 12 for generating plasma is arranged at equal intervals, and a dielectric layer 13 is formed on the surface of the glass substrate 1 1 . The state of the electrode 12 is taken. Further, in the present invention, the aspect of "transferring the film forming material layer onto the substrate" is transferred to the dielectric layer 1 except for the above-described aspect of transfer onto the surface of the glass substrate 11. 3 surface appearance. (1) Transfer step of film forming material layer: If an example of the transfer step of the film forming material layer is exemplified, the following is as follows: After peeling off the cover film (not shown) of the transfer film, as shown in FIG. On the surface of the dielectric layer 13, the transfer film 20 is superposed on the surface of the film forming material layer 21, and the transfer film 20 is thermocompression bonded by a heat roller or the like, and then from the film. The support film 22 is peeled off on the forming material layer 2 1 . Thereby, as shown in Fig. 3C, the transfer film forming material 32 312 / invention specification (supplement) / 93-07/93110493 1248425 layer 2 1 on the surface of the dielectric layer 13 is formed and in close contact. The transfer condition is set to, for example, the surface temperature of the heating roller is 80 to 140 ° C, the roller pressure generated by the heating roller is 1 to 5 kg / cm 2, and the moving speed of the heating roller is Ο 1 to 1 Ο . 0 m / min. Further, the glass substrate 11 may be preheated first, and the preheating temperature may be set to, for example, 40 to 1 0 0 °C. (1) Photoresist film forming step: In this step, as shown in Fig. 3D, a resist film 31 is formed on the surface of the transfer film forming material layer 2 1 . The photoresist constituting the photoresist film 31 may be either a positive photoresist or a negative photoresist. The photoresist film 31 is formed by applying a photoresist to various methods such as a screen printing method, a roll coating method, a spin coating method, and a flow coating method, followed by drying the coating film. Among them, the drying temperature of the coating film is usually set to about 60 to 130 °C. Further, it may be formed by transferring a photoresist film formed on the support film onto the surface of the film forming material layer 2 1 . According to this formation method, the number of steps of forming the photoresist film can be reduced, and since the film thickness uniformity of the obtained photoresist is superior, the development process of the photoresist film and the film formation material layer can be uniformly performed. In the etching process, the height and shape of the partition wall formed will form a uniform state. The film thickness of the photoresist film 31 is usually set to 0.1 to 40 μm, preferably 0.5 to 20 μm. (1) Photoresist film exposure step: In this step, as shown in FIG. 3A, on the surface of the photoresist film 31 formed on the film forming material layer 2, selective irradiation is performed through the mask for exposure. (Exposure) radiation such as ultraviolet rays to form a latent image of a photoresist pattern. In the same figure, ΜΑ and MB refer to the light-transmitting portion and the light-shielding portion in the mask for exposure, respectively. 33 312/Invention Manual (Supplement)/93-07/93110493 1248425 The ultraviolet irradiation device is not particularly limited, and can be used when the ultraviolet irradiation device used in the photolithography method described above or the semiconductor and liquid crystal display device is used. Exposure device, etc. Further, when it is formed by transferring a photoresist film, it is preferable to carry out an exposure step in a state where the support film on the photoresist film is not peeled off. (1) Photoresist film development step: In this step, the photoresist pattern (latent image) is developed by performing a development process on the exposed photoresist film. In addition, the development processing conditions may be matched with the type of the photoresist film 31, etc., and the developer type, composition, concentration, development time, development temperature, and development method (for example, dipping method, shaking method, shower coating method, spray coating method, etc.) may be appropriately selected. Paddle method), developing device, and the like. Through this development step, as shown in Fig. 4F, a photoresist pattern 35 (corresponding to the pattern of the exposure mask )) formed by the photoresist residual portion 35A and the photoresist removal portion 35B is formed. The photoresist pattern 35 has an etching mask effect in the next step (etching step), and the constituent material of the photoresist residual portion 3 5 ( (photo-cured photoresist) must be a dissolution rate of the money engraving liquid. The material is smaller than the film forming material layer 21 to constitute a material. (1) Remaining step of the film forming material layer: In this step, the film forming material layer is subjected to an etching treatment to form a partition wall pattern layer corresponding to the photoresist pattern. In other words, as shown in FIG. 4G, in the film forming material layer 21, the portion of the photoresist pattern 35 corresponding to the photoresist removing portion 3 5 B is dissolved in the etching liquid, 34 312 / invention specification (supplement ) /93-07/93110493 1248425 俾 Selective removal. 4G shows the state in the etching process. Then, if the etching treatment is continued, as shown in Fig. 4H, the predetermined portion of the film-forming material layer 2 1 is completely removed, and the dielectric layer 13 is exposed. Thereby, the partition pattern layer 25 composed of the material layer remaining portion 2 5 A and the material layer removing portion 2 5 B is formed. The etching treatment conditions may be matched with the type of the film forming material layer 21, and the etching liquid type, composition, concentration, processing time, processing temperature, and treatment method (for example, dipping method, shaking method, shower coating method, etc.) may be appropriately selected. Spraying method, paddle method), processing device, etc. Further, the etching liquid can be used in the same solution as the developing solution used in the developing step, and by selecting the kind of the photoresist film 31 and the film forming material layer 21, the developing step and the etching step can be continuously performed. The use of steps is simplified to improve the efficiency of manufacturing. Among them, the photoresist residual portion 35 A constituting the photoresist pattern 35 is preferably gradually dissolved during the etching process, and is completely removed at the stage of forming the partition wall pattern layer 25 (at the end of the etching process). Further, even if part (or all) of the photoresist residual portion 3 5 A remains after the etching process, the photoresist residual portion 3 5 A is removed in accordance with the subsequent firing step. (1) Firing step of the partition wall pattern layer: In this step, the partition wall pattern layer 25 is subjected to a baking treatment to form a partition wall. Thereby, the organic substance in the material layer remaining portion 2 5 A is burned out to form a partition wall, and as shown in FIG. 4I, the panel material 50 of the partition wall 40 is formed on the surface of the dielectric layer 13 . The space partitioned by the partition wall 40 (the space originating from the material layer removing portion 2 5 B) is used to form a plasma working space. 35 312 / invention manual (supplement) / 93-07 / 93110493 1248425 wherein the firing temperature must be the temperature at which the organic matter of the material layer 2 5 A is burned out, usually 4 0 0 to 600 ° C. Further, the firing time is usually set to 10 to 90 minutes. &lt;Manufacturing Method (3) of P D P (Preferred Embodiment Using Photoresist Method)&gt; The method of manufacturing the PDP of the present invention is not limited to the methods shown in Figs. 3 and 4 . Among them, another preferred method for forming a constituent of P D P (manufacturing method 3 of P D P) may, for example, be a method of forming the following steps (1) to (3). (1) After forming a photoresist film on a support film, the inorganic particle-containing composition of the present invention is coated on the photoresist film, and dried to form a film-forming material layer. In the case where the photoresist film and the film forming material layer are formed, a roll coater or the like can be used, whereby a laminated film having excellent film thickness uniformity can be formed on the support film. (2) The photoresist film formed on the support film and the laminated film of the film forming material layer are transferred onto the substrate. Here, the transfer conditions are as in the above "transfer step of the film-forming material layer". (3) The above-mentioned "exposure step of the photoresist film", "shadowing step of the photoresist film", "etching step of the film forming material layer", and "baking step of the partition wall pattern layer" are performed. In this case, as described above, it is preferable that the developing solution of the photoresist film and the etching solution of the film forming material layer are the same solution, and the "developing step of the photoresist film" and the "film forming material layer" can be continuously performed. Etching step". According to the above method, since the film forming material layer and the photoresist film are once transferred onto the substrate, the manufacturing efficiency can be further improved by the simplification of the steps. &lt;Manufacturing Method of PDP (4) (Configuration of Radiation-Photosensitive Transfer Film 36 3 12 / Invention Specification (Supplement) / 93-07/93110493 1248425)&gt; Manufacturing Method of PDP of the Present Invention (4) a latent image in which a film forming material layer constituting the radiation photosensitive transfer film of the present invention is transferred onto a substrate, and the film forming material layer is subjected to an exposure treatment to form a photoresist pattern. The film forming material layer is subjected to development processing to form a pattern layer, and the pattern layer is subjected to a firing treatment to form a selected layer, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, and a black. The steps that make up the elements in the matrix. In this method, for example, a method of forming a partition wall is used, and after the "transfer step of the film forming material layer", the "exposure step of the photoresist film" and the "developing step of the photoresist film" are used. Under the condition that the pattern layer is formed, the partition wall is formed on the surface of the substrate by the "baking step of the partition wall pattern". In the description of each step of the manufacturing method (1) to (4) of the above PDP, a method of forming a "partition wall" for forming a PDP component will be described. However, an electrode, a resistor, and a resistor constituting the PDP may be formed according to this method. Dielectric layer, phosphor, color filter, black matrix, etc. &lt;Examples&gt; Hereinafter, the examples of the invention will be described, but the invention is not limited thereto. In addition, in the following, "parts" means "parts by weight". (Example 1) C 1) Preparation of glass paste composition (composition containing inorganic particles): The glass powder (inorganic particles) was made of lead oxide, boron oxide, cerium oxide, and oxidized mother (P b 0 - Mixture of B 2 0 3 - S i 0 2 - C a 0)) (softening point 5 6 0 37 312 / invention specification (supplement) / 93-07/93110493 1248425 ° C) 1 Ο 0 parts, bonding resin Butyl methacrylate (BMA) / 2 - ethylhexyl methacrylate (EHMA) / 2 - hydroxypropyl methacrylate (HPMA) / methyl propyl acrylate glycidyl S (GMA) copolymer ( Weight ratio 30/60/5/5, weight average molecular weight 1 0 5,0 0 0) 17 parts, and dispersant n-decyltrimethoxy decane 1.0 part, and plasticizer 2-2 2 parts of diethyl sebacate azelaic acid, and 7.3 parts of propylene glycol monomethyl ether of solvent and 1 part of ethyl 3-ethoxypropionate, mixed with a dispersing machine, and the viscosity is adjusted. The composition of the present invention of 1,600 mPa·s (20 rpm, manufactured by Toki Sangyo Co., Ltd., TV-300 viscometer). (2) Manufacture and evaluation of transfer film (flexibility and handleability): The composition of the present invention prepared by the above (1) is applied by a knife coater to a pre-released poly(p-phenylene). The coating film (width: 400 mm, length: 30 m, thickness: 38 μm) composed of ethylene diacetate (PET) was dried at 100 ° C for 5 minutes to remove the solvent. A film forming material layer having a thickness of 90 μm was formed on the support film. Next, on the film forming material layer, a cover film (width: 400 mm, length: 30 m, thickness: 38 μm) composed of PET which was subjected to a release treatment in advance was attached, thereby having a structure as shown in FIG. The transfer film of the present invention. The obtained transfer film has flexibility and can be easily wound into a roll. Further, even if the transfer film is bent, cracks (curved cracks) are not formed on the surface of the film-forming material layer, and the film-forming material layer is superior in flexibility. Further, the cover film is peeled off from the transfer film, and the transfer film (the laminated film of the support film and the film forming material layer) is superposed under pressure to form a film forming material layer surface abutting on the surface of the glass substrate The state, secondly, attempts to peel off the transfer film from the surface of the glass 38 312 / invention specification (supplement) / 93-07 / 93110493 1248425, and as a result, the film forming material layer exhibits a moderate adhesion to the glass substrate, and When the film formation material layer does not cause aggregation failure, the transfer film is peeled off and has superior handleability (handlerability) for the transfer film. (3) Transfer of film forming material layer: After peeling off the cover film from the transfer film obtained in the above (2), the transfer is performed on the surface of the glass substrate for the panel (the fixed surface of the bus electrode) The film (the laminated film of the support film and the film forming material layer) is superposed to abut against the surface of the film forming material layer, and the transfer film is subjected to thermocompression bonding using a heating roll. Among them, the crimping conditions were set to: the surface temperature of the heating roller was 90 ° C, the rolling pressure was 2 k g / c m 2 , and the moving speed of the heating roller was 0.8 m / min. After the completion of the thermocompression bonding treatment, the film forming material layer is fixed (heat-adhered) on the surface of the glass substrate, and the support film is peeled off to complete the transfer of the film forming material layer. In this transfer step, when the support film is peeled off, the film-forming material layer does not undergo agglomeration damage, and the film-forming material layer has a very large film strength. Further, the transferred film forming material layer has good adhesion to the surface of the glass substrate. (4) Firing of a film forming material layer (formation of a dielectric layer): The glass substrate on which the film forming material layer is transferred by the above (3) is placed in a firing furnace at 10 per minute. After the temperature of °C is raised to 750 ° C in the furnace, and then subjected to a sintering treatment at 510 ° C for 10 minutes, a dielectric composed of a glass sintered body is formed on the surface of the glass substrate. Floor. The film thickness (average film thickness and tolerance) of the dielectric layer was measured, and the result was in the range of 0.4 π/inventive specification (supplement)/93-07/93110493 1248425 4 4μπl soil 0.4 μπl, which was superior in film thickness uniformity. . In addition, for the obtained dielectric surface, a three-dimensional measurement was performed using a non-contact film thickness meter (manufactured by Ryoden Co., Ltd., Ν Η - 3 ), and the surface roughness was obtained according to the JIS specification (B 0 6 0 1 ). Ra, Ry, Rz), the result is Ra two 0.06μπι,

Ry二0·43μπι、R ζ = Ο . 2 1 μ m j屬於表面平滑性優越者。 (實施例2〜6 ) 除在實施例1中，將黏結樹脂分別改採用表1所示共聚 合體之外，其餘均如同實施例1 ( 1 )般的調製得玻璃糊狀物 組成物，採用所獲得各玻璃糊狀物，如同實施例1 ( 2 )般的 形成轉印膜。所獲得轉印膜均具有柔軟性，可輕易地施行 捲繞成捲筒狀的操作。而且，即便將此轉印膜彎曲，在膜 形成材料層表面上仍不致發生裂痕（彎曲龜裂）情況，該膜 形成材料層屬於具優越可撓性。 採用所獲得轉印膜，如同實施例1 ( 3 )般的施行轉印，結 果不管採用哪一轉印膜的情況下，當剝離支撐膜之時，膜 形成材料層均可不致發生凝聚破壞現象，該膜形成材料層 具有十分大的膜強度。而且，經轉印過的膜形成材料層對 玻璃基板表面具有良好的黏著性。 再者，如同實施例1 ( 4 )般的形成介電質層，並針對所獲 得介電質層表面，如同實施例1般的求取表面粗链度（R a、 R y、R z )。R a、R y、R z值與實施例1之測量值一併記於表1 中 〇 表1 實施例黏結樹脂之共聚合比（重量比）表面粗糙度 40 312/發明說明書(補件)/93-07/93110493 1248425 BMA EHMA HPMA GMA R a Ry R z 1 30 60 5 5 0· 06 0. 43 0.21 2 30 57.5 10 2.5 0· 06 0. 42 0.23 3 30 55 10 5 0· 06 0. 43 0.21 4 30 52.5 10 7.5 0. 07 0. 44 0.25 5 30 50 10 10 0.12 1 . 12 0.65 6 30 40 10 20 0. 10 0· 62 0.34 (比較例） 除將黏結樹脂的份數設為1 7份，並取代曱基丙烯酸丁 酯/ 2-甲基丙烯酸乙基己酉旨/ 2-甲基丙烯酸羥基丙醋/曱基 丙烯酸縮水甘油酯共聚合體（重量比30/60/5/5、重量平均 分子量105，000)，改採用甲基丙烯酸丁酯/ 2-曱基丙烯酸 乙基己酯/ 2-曱基丙烯酸羥基丙酯共聚合體（重量比 3 0 / 6 0 / 1 0、重量平均分子量1 5 0，0 0 0 )之外，其餘均如同實 施例，調製得黏度1，2 0 0 mPa· s(20rpm、東機產業製、TV-30 式黏度計）組成物。採用所獲得組成物，如同實施例般的製 造轉印膜，經評估結果雖具有良好的可撓性與處置性，但 是經如同實施例般形成介電質層且求取表面粗糙度（R a、Ry 2·43μπι, R ζ = Ο . 2 1 μ m j is superior in surface smoothness. (Examples 2 to 6) Except that in Example 1, except that the binder resin was changed to the copolymer shown in Table 1, the glass paste composition was prepared in the same manner as in Example 1 (1). Each of the glass pastes obtained was formed into a transfer film as in Example 1 (2). The obtained transfer film is flexible and can be easily wound into a roll. Further, even if the transfer film is bent, cracks (curved cracks) do not occur on the surface of the film-forming material layer, and the film-forming material layer is superior in flexibility. With the obtained transfer film, transfer was carried out as in the case of Example 1 (3), and as a result, no matter which transfer film was used, when the support film was peeled off, the film-forming material layer could not be agglomerated and destroyed. The film forming material layer has a very large film strength. Moreover, the transferred film forming material layer has good adhesion to the surface of the glass substrate. Further, a dielectric layer was formed as in Example 1 (4), and the surface roughness (R a, R y, R z ) was obtained as in Example 1 for the surface of the obtained dielectric layer. . The R a , R y , and R z values are shown in Table 1 together with the measured values of Example 1. Table 1 Example Copolymerization Ratio of Cohesive Resin (Weight Ratio) Surface Roughness 40 312 / Invention Specification (Supplement) / 93-07/93110493 1248425 BMA EHMA HPMA GMA R a Ry R z 1 30 60 5 5 0· 06 0. 43 0.21 2 30 57.5 10 2.5 0· 06 0. 42 0.23 3 30 55 10 5 0· 06 0. 43 0.21 4 30 52.5 10 7.5 0. 07 0. 44 0.25 5 30 50 10 10 0.12 1 . 12 0.65 6 30 40 10 20 0. 10 0· 62 0.34 (Comparative Example) The number of parts of the binder resin is set to 1 7 And replace butyl methacrylate / 2-ethyl methacrylate ethyl hexyl / 2-methacrylic acid hydroxypropyl acrylate / glycidyl acrylate glycidyl ester copolymer (weight ratio 30/60/5/5, weight The average molecular weight is 105,000), and the use of butyl methacrylate / ethyl 2-hexyl acrylate / hydroxypropyl 2- methacrylate acrylate (weight ratio of 30 / 60 / 10, weight average molecular weight) Except for 1 5 0,0 0 0 ), the composition was adjusted to have a viscosity of 1,200 mPa·s (20 rpm, manufactured by Toki Sangyo Co., Ltd., TV-30 viscometer) as in the examples. Using the obtained composition, a transfer film was produced as in the examples, and although the evaluation results showed good flexibility and handleability, a dielectric layer was formed as in the example and the surface roughness was obtained (R a ,

Ry、Rz)，結果 R a =0·31μπι、R y = 2 . 6 1 μπι - R z = 1 . 1 0 μπι j 屬 於表面平滑性差劣者。 雖參照特定實施形態詳盡地說明本發明，但是在不脫逸 本發明精神與範疇之前提下，尚可進行各種變更、修正， 乃熟習此技術者可輕易思及。 本案乃根據2 0 0 3年4月2 4曰申請的曰本專利申請案（曰 本專利特願2003-119490)，並將其内容取入參考於其中。 41 312/發明說明書(補件)/93-07/93110493 1248425 (產業上之可利用性） 依照本發明組成物的話，將達下述效果： (1 )在低溫、短時間的燒成步驟中，可適當地形成表面 平滑性優越之P D P構成要件（如：分隔壁、電極、電阻體、 介電質層、螢光體、彩色濾光片、黑矩陣）。 (2 )可製造具優越可撓性之膜形成材料層的轉印膜。 (3 )可製造膜形成材料層轉印性（對基板的加熱黏著性） 優越之轉印膜。 依照本發明轉印膜的話，將達下述效果： (1 )在低溫、短時間的燒成步驟中，可有效率地形成表 面平滑性優越的P D P構成要件（特別係介電質層）。 (2 )膜形成材料層可撓性優越，在該膜形成材料層表面 上不致發生彎曲龜裂（裂痕）情況。 (3 )柔軟性優越，可輕易地執行捲取為捲筒狀的操作。 (4 )膜形成材料層顯示適當的黏著性，處置性（處理性） 良好。 (5 )膜形成材料層之轉印性（對基板的加熱黏著性）優 越。 依照本發明之製造方法的話，將達下述效果： (1 )在低溫、短時間的燒成步驟中，可有效率地形成表 面平滑性優越之P D P構成要件（如：分隔壁、電極、電阻體、 介電質層、螢光體、彩色濾光片、黑矩陣）。 (2 )在低溫、短時間的燒成步驟中，可有效率地形成構 成要件位置精度較高的PDP。 42 312/發明說明書(補件)/93-07/93110493 1248425 (3 )在低溫、短時間的燒成步驟中，可有效率地形成膜 厚較大的介電質層。 (4 )在低溫、短時間的燒成步驟中，可有效率地形成大 型面板所要求的介電質層。 (5 )在低溫、短時間的燒成步驟中，可有效率地形成具 備有膜厚均勻性與表面平滑性均優越之介電質層的PDP。 【圖式簡單說明】 圖1為交流型電漿顯示面板之剖面形狀模型圖。 圖2A為本發明之轉印膜之概略剖面圖；圖2B為該轉印 膜之層構造剖面圖。 圖3 A〜3 E為本發明製造方法中，分隔壁形成步驟（轉印 步驟、光阻膜形成步驟、及曝光步驟）之一例的概略剖面圖。 圖4 F〜4 I為本發明製造方法中，分隔壁形成步驟（顯影 步驟、蝕刻步驟、及燒成步驟）之一例的概略剖面圖。 (元件符號說明） 1 玻璃基板 2 玻璃基板 3 分隔壁 4 透明電極 5 匯流電極 6 位址電極 7 螢光物質 8 介電質層 9 介電質層 43 312/發明說明書(補件)/93-07/93〗10493 1248425 10 保 護 層 11 玻 璃 基 板 12 電 極 13 介 電 質 層 2 0 轉 印 膜 2 1 膜 形 成 材 料 層 22 支 撐 膜 25 分 隔 壁 圖 案 層 25A 材 料 層 殘 留 部 25B 材 料 層 去 除 部 3 1 光 阻 膜 35 光 阻 圖 案 35A 光 阻 殘 留 部 35B 光 阻 去 除 部 40 分 隔 壁 50 面 板 材 料 F 1 支 撐 膜 F2 膜 形 成 材 料 層 F3 覆 蓋 膜 Μ 曝 光 用 遮 罩 ΜΑ 光 穿 透 部 MB 遮 光 部 44 3丨2/發明說明書(補件)/93-07/93110493Ry, Rz), the result R a =0·31μπι, R y = 2. 6 1 μπι - R z = 1. 1 0 μπι j belongs to the surface smoothness. The present invention has been described in detail with reference to the specific embodiments thereof. However, various modifications and changes can be made without departing from the spirit and scope of the invention. This application is based on a patent application filed on April 24, 2003 (the patent application No. 2003-119490), the contents of which are incorporated herein by reference. 41 312/Invention Manual (Supplement)/93-07/93110493 1248425 (Industrial Applicability) According to the composition of the present invention, the following effects are achieved: (1) in a low-temperature, short-time firing step A PDP constituent element having excellent surface smoothness (for example, a partition wall, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, a black matrix) can be suitably formed. (2) A transfer film capable of producing a film layer of a film having a superior flexibility. (3) A transfer film which is excellent in transferability (heat adhesion to a substrate) of a film forming material layer can be produced. According to the transfer film of the present invention, the following effects are obtained: (1) In the low-temperature, short-time firing step, a P D P constituent element (particularly a dielectric layer) having excellent surface smoothness can be efficiently formed. (2) The film forming material layer is excellent in flexibility, and no bending crack (crack) occurs on the surface of the film forming material layer. (3) The flexibility is excellent, and the operation of winding up into a roll can be easily performed. (4) The film forming material layer exhibits appropriate adhesion and has good handleability (handling property). (5) The transfer property of the film forming material layer (heating adhesion to the substrate) is excellent. According to the manufacturing method of the present invention, the following effects are achieved: (1) In a low-temperature, short-time firing step, PDP constituent elements having excellent surface smoothness (e.g., partition walls, electrodes, resistors) can be efficiently formed. Body, dielectric layer, phosphor, color filter, black matrix). (2) In the low-temperature, short-time firing step, the PDP having a high positional accuracy of the constituent elements can be efficiently formed. 42 312/Invention Manual (Supplement)/93-07/93110493 1248425 (3) In a low-temperature, short-time firing step, a dielectric layer having a large film thickness can be efficiently formed. (4) In the low-temperature, short-time firing step, the dielectric layer required for the large panel can be efficiently formed. (5) In a low-temperature, short-time firing step, a PDP having a dielectric layer excellent in film thickness uniformity and surface smoothness can be efficiently formed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional shape model diagram of an AC type plasma display panel. Fig. 2A is a schematic cross-sectional view showing a transfer film of the present invention; and Fig. 2B is a sectional view showing a layer structure of the transfer film. Figs. 3A to 3E are schematic cross-sectional views showing an example of a partition wall forming step (transfer step, photoresist film forming step, and exposure step) in the manufacturing method of the present invention. 4 to 4 are schematic cross-sectional views showing an example of a partition wall forming step (developing step, etching step, and firing step) in the manufacturing method of the present invention. (Description of component symbols) 1 Glass substrate 2 Glass substrate 3 Partition wall 4 Transparent electrode 5 Bus electrode 6 Address electrode 7 Fluorescent substance 8 Dielectric layer 9 Dielectric layer 43 312 / Invention manual (supplement) / 93- 07/93〗 10493 1248425 10 Protective layer 11 Glass substrate 12 Electrode 13 Dielectric layer 2 0 Transfer film 2 1 Film forming material layer 22 Support film 25 Partition pattern layer 25A Material layer remaining portion 25B Material layer removing portion 3 1 Photoresist film 35 Resistive pattern 35A Resistive residual portion 35B Photoresist removal portion 40 Partition wall 50 Panel material F 1 Support film F2 Film forming material layer F3 Cover film 曝光 Exposure mask ΜΑ Light penetrating portion MB Shading portion 44 3丨 2 / invention manual (supplement) / 93-07/93110493

Claims (1)

1248425 拾、申請專利範圍： 1 . 一種電漿顯示面板用之含有無機粒子之組成物，其特 徵係包含有： [A ]無機粒子；以及 [B ]含有具下述式（I )所示重複單位之聚合體[B - 1 ]的黏 結樹脂；1248425 Pickup, Patent Application Range: 1. A composition containing inorganic particles for a plasma display panel, characterized by comprising: [A] inorganic particles; and [B] containing a repeat represented by the following formula (I) a bonding resin of a unit of polymer [B-1]; (式中，X係指氫原子或曱基；R1係指單鍵、亞甲基、或 碳數2〜5伸烷基；η係指1〜6整數）。 2 .如申請專利範圍第1項之含有無機粒子之組成物，係 再含有[C ]放射線感光性成分。 3 .如申請專利範圍第1項之含有無機粒子之組成物，係 再含有可塑劑。 4 .如申請專利範圍第1項之含有無機粒子之組成物，係 再含有矽烷偶合劑。 5 .如申請專利範圍第1項之含有無機粒子之組成物，其 中，[Β - 1 ]聚合體係使下式（i )所示單體，與從（曱基）丙烯 酸烧S旨、（曱基）丙稀酸經基烧酯、（曱基）丙稀酸烧氧基烧 酯中至少選擇1種，進行共聚合而獲得的聚合體； 45 312/發明說明書(補件)/93-07/93110493 X 1248425 I ,·、 h2c=c (i)(In the formula, X means a hydrogen atom or a fluorenyl group; R1 means a single bond, a methylene group, or a C 2 to 5 alkyl group; and η means an integer of 1 to 6). 2. The composition containing inorganic particles according to the first aspect of the patent application, further comprising [C] radiation sensitive component. 3. A composition containing inorganic particles according to the first aspect of the patent application, further comprising a plasticizer. 4. The composition containing inorganic particles according to the first aspect of the patent application, further comprising a decane coupling agent. 5. The composition containing inorganic particles according to the first aspect of the patent application, wherein the [Β - 1 ] polymerization system is such that the monomer represented by the following formula (i) is burned with (acrylic) acrylic acid, (曱a polymer obtained by copolymerization of at least one selected from the group consisting of a benzoic acid ester and a (mercapto)acrylic acid alkoxylated ester; 45 312 / invention specification (supplement) / 93-07 /93110493 X 1248425 I ,·, h2c=c (i) (式中，X、R1及n之定義係如同上述式（I))。 6 .如申請專利範圍第1項之含有無機粒子之組成物，其 中，上述[A ]無機粒子，係含有軟化點3 5 0〜7 0 0 °C的玻璃粉 末。 7 . —種轉印膜，其特徵係具有由申請專利範圍第1項之 含有無機粒子之組成物所獲得的膜形成材料層。 8 . —種轉印膜，其特徵係具有光阻膜，與由申請專利範 圍第1項之含有無機粒子組成物所獲得膜形成材料層的層 積。 9 . 一種電漿顯示面板之製造方法，其特徵係包含有：將 由申請專利範圍第1項之含有無機粒子組成物所獲得膜形 成材料層，轉印於基板上，再藉由對經轉印過的膜形成材 料層施行燒成，而在上述基板上形成介電質層的步驟。 1 0 . —種電漿顯示面板之製造方法，其特徵係包含有：將 由申請專利範圍第1項之含有無機粒子組成物所獲得膜形 成材料層，轉印於基板上，並在經轉印過的膜形成材料層 上形成光阻膜，再對該光阻膜施行曝光處理而形成光阻圖 案潛像，對該光阻膜施行顯影處理而使光阻圖案顯影化， 再對該膜形成材料層施行蝕刻處理而形成對應著光阻圖案 的圖案層，藉由對該圖案層施行燒成處理，而形成由分隔 壁、電極、電阻體、介電質層、螢光體、彩色濾光片、及 46 312/發明說明書(補件)/93-07/93110493 1248425 黑矩陣中所選擇構成要件的步驟。 1 1 . 一種電漿顯示面板之製造方法，其特徵係包含有：在 支撐膜上形成光阻膜、與由申請專利範圍第1項之含有無 機粒子組成物所獲得膜形成材料層的層積膜，將支撐膜上 所形成的層積膜轉印於基板上，再對構成該層積膜的光阻 膜施行曝光處理而形成光阻圖案潛像，對該光阻膜施行顯 影處理而使光阻圖案顯影化，再對該膜形成材料層施行蝕 刻處理而形成對應著光阻圖案的圖案層，藉由對該圖案層 施行燒成處理，而形成由分隔壁、電極、電阻體、介電質 層、螢光體、彩色濾光片、及黑矩陣中所選擇構成要件的 步驟。 1 2 . —種電漿顯示面板之製造方法，其特徵係包含有：將 由申請專利範圍第2項之含有無機粒子組成物所獲得膜形 成材料層，轉印於基板上，再對該膜形成材料層施行曝光 處理而形成圖案之潛像，對該膜形成材料層施行顯影處理 而形成圖案層，再藉由對該圖案層施行燒成處理，而形成 由分隔壁、電極、電阻體、介電質層、螢光體、彩色濾光 片、及黑矩陣中所選擇構成要件的步驟。 47 312/發明說明 *：(補件)/93-07/93110493(wherein, X, R1 and n are as defined in the above formula (I)). 6. The inorganic particle-containing composition according to the first aspect of the invention, wherein the [A] inorganic particle contains a glass powder having a softening point of from 3,500 to 750 °C. A transfer film characterized by having a film forming material layer obtained from the composition containing inorganic particles of the first aspect of the patent application. A transfer film characterized by having a photoresist film and a layer of a film-forming material layer obtained by the inorganic particle-containing composition of the first aspect of the patent application. 9. A method of manufacturing a plasma display panel, comprising: transferring a film forming material layer obtained from the inorganic particle-containing composition of claim 1 to a substrate, and then transferring the film The film forming material layer is subjected to firing to form a dielectric layer on the substrate. A manufacturing method of a plasma display panel, characterized in that the film forming material layer obtained by the inorganic particle-containing composition of the first application of the patent application is transferred onto a substrate and transferred. A photoresist film is formed on the film forming material layer, and the photoresist film is exposed to form a photoresist pattern latent image, and the photoresist film is subjected to development processing to develop a photoresist pattern, and then the film is formed. The material layer is etched to form a pattern layer corresponding to the photoresist pattern, and the pattern layer is subjected to a baking treatment to form a partition wall, an electrode, a resistor, a dielectric layer, a phosphor, and a color filter. The film, and 46 312 / invention manual (supplement) / 93-07 / 93110493 1248425 the steps selected in the black matrix. 1 . A method of manufacturing a plasma display panel, comprising: forming a photoresist film on a support film, and laminating a film-forming material layer obtained from the inorganic particle-containing composition of claim 1 a film, the laminated film formed on the support film is transferred onto the substrate, and the photoresist film constituting the laminated film is subjected to an exposure treatment to form a photoresist pattern latent image, and the photoresist film is subjected to development processing. The photoresist pattern is developed, and the film forming material layer is etched to form a pattern layer corresponding to the photoresist pattern, and the pattern layer is subjected to a baking treatment to form a partition wall, an electrode, a resistor, and a dielectric layer. The steps of selecting constituent elements in the electrolyte layer, the phosphor, the color filter, and the black matrix. A method for producing a plasma display panel, comprising: forming a film forming material layer obtained from the inorganic particle-containing composition of the second aspect of the patent application, transferring the layer to a substrate, and forming the film The material layer is subjected to exposure processing to form a latent image of the pattern, and the film forming material layer is subjected to development processing to form a pattern layer, and the pattern layer is subjected to a baking treatment to form a partition wall, an electrode, a resistor, and a dielectric layer. The steps of selecting constituent elements in the electrolyte layer, the phosphor, the color filter, and the black matrix. 47 312/Invention Description *: (Supplement) /93-07/93110493
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