TW200422424A - Low temperature deposition of silicon oxides and oxynitrides - Google Patents

Low temperature deposition of silicon oxides and oxynitrides Download PDF

Info

Publication number
TW200422424A
TW200422424A TW092122655A TW92122655A TW200422424A TW 200422424 A TW200422424 A TW 200422424A TW 092122655 A TW092122655 A TW 092122655A TW 92122655 A TW92122655 A TW 92122655A TW 200422424 A TW200422424 A TW 200422424A
Authority
TW
Taiwan
Prior art keywords
deposition
patent application
silicon
ozone
substrate
Prior art date
Application number
TW092122655A
Other languages
English (en)
Inventor
Yoshihide Senzaki
Sang-In Lee
Sang-Kyoo Lee
Original Assignee
Asml Us Inc
Integrated Process Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Us Inc, Integrated Process Systems Ltd filed Critical Asml Us Inc
Publication of TW200422424A publication Critical patent/TW200422424A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Description

200422424 (1) 玖、發明說明 相關申請案 此申請案係關於2002年 8月18日提出申請的 U.S.Provisional Patent Application Serial No.60/404,363 ’其標題爲 ’’Low Temperature Deposition of Silicon Oxides and Oxynitrides(矽氧化物和矽氮氧化物之低溫澱 積法）’’，並聲明其優先權。 【發明所屬之技術領域】 本發明係關於半導體範圍。更特定言之，本發明係關 於自矽有機先質和臭氧形成矽氧化物和/或矽氮氧化物之 低溫化學蒸鍍法（CVD)和低溫原子層澱積法（ALD)。 【先前技術】 CVD是一種已知澱積法。CVD中，二或多種反應物 氣體於澱積槽中混在一起，氣體於此處以氣相反應並在基 板表面上澱積成膜或直接於基板表面上反應。藉CVD法 澱積進行特定時間長度，此依所欲澱積膜厚度爲基礎。因 爲特定時間與反應物進入槽的通量有關，所以各槽所須時 間會不同。 ALD也是一種已知方法。慣用ALD澱積循環中，各 反應物氣體先後引至槽中，因此沒有氣相內部混合情況發 生。第一種反應物（即，先質）單層物理或化學吸附於基板 表面上。之後去除過多的第一種反應物，此通常藉惰性滌 -5 - (2) (2)200422424 氣氣體和/或抽取之助。之後將第二種反應物引至澱積槽 中並與第一種反應物反應，經由自身限制的表面反應，形 成單層所欲膜。一旦初時吸附的第一種反應物與第二種反 應物完全反應，便會中止此自身限制反應。之後藉惰性氣 體和/或抽取之助，去除過多的第二種反應物。視所需地 重覆澱積循環，以得到所欲膜厚度。藉由簡單計算澱積循 環次數，此膜厚度精確度可控制至原子層（即，埃）。 已經知道將矽氧化物（SiOx)和矽氮氧化物（SiOxNy)膜 用於閘極和電容器應用。但是，隨著積體電路（1C)線寬尺 寸持續降低，此技巧（包括本CVD技巧）越來越不適用。 例如，已經知道使用CVD，藉矽有機先質與氧氣或 水蒸汽之反應澱積氧化矽層。但這樣的CVD法的溫度通 常必須超過60(TC —雖然雙（第三丁基胺基）矽烷（BTBAS) 和二乙基矽烷（Et2SiH2)與氧氣（02)於400 °C:反應。這樣的 高溫導致接觸金屬（如：鎢）的氧化反應，因此提高線阻抗 。此外，這樣的高溫導致金屬催化反應，在裝置結構中形 成所不欲鬚狀物（如：鎢鬚）。因此，須發展使用較低溫度 的澱積法。 另一實例中，在金屬前（pre-metal)介電（PMD)應用中 ，已經知道使用高密度電漿（HDP)CVD，於介於 3 00和 5 5 0 °C的溫度澱積摻磷玻璃（PSG)或未摻雜的矽酸鹽玻璃 (NSG)。但是，HDP CVD的縫隙塡補能力限於縱橫比約3 :1。縱橫比是縫隙高度與其寬度的比値；比値越高越難 塡補。有縫隙或孔洞存在於半導體裝置的金屬之間會導致 -6 - (3) (3)2004224 24 捕集水、細微破裂和短路。因此，須要縫隙塡補能力較高 的澱積法。 【發明內容】 提出低溫（即，低於約45 0 °C )澱積法，以澱積用於隔 絕物和金屬前介電應用的氧化矽和氮氧化矽層。此方法可 爲CVD和ALD法，使用臭氧作爲氧化劑並使甩矽有檄先 質及選用的氮來源。此低溫澱積法提供良好的漸近覆蓋和 縫隙塡補力，提供高縱橫比至6 : 1或以上。 本發明的一個特點中，將氧化矽層澱積於基板上的 CVD法包含至少一個循環包含下列步驟：（i)將矽有機先 質引至有基板位於其中的澱積區中；和（Π)將臭氧引至澱 積區中。本發明的此特點中，步驟可同時或連續進行。先 質和臭氧反應，在基板上形成氧化矽層。 本發明的另一特點中，將氮氧化矽層澱積於基板上的 一個CVD法包含至少一個循環包含下列步驟：（i)將矽有 機先質引至有基板位於其中的澱積區中；（ii)將臭氧引至 澱積區中；和（出）將氮來源（如：氨（NH3))引至澱積區中。 同樣地，這些步驟可同時或連續進行。先質、臭氧和氮來 源反應，在基板上形成氮氧化矽層。 本發明的另一特點中，將氧化矽層澱積於基板上的 C V D法包含至少一個循環包含下列步驟：（i)將矽有機先 質引至有基板位於其中的澱積區中；（Η)對澱積區滌氣； 和（iii)將臭氧引至澱積區中。本發明的此特點中’步驟連 (4) (4)2004224 24 續進行。此循·環多澱積一層氧化矽。可視達到所欲膜厚度 所需地多次重覆此循環，只要各循環之間經額外的癜積區 滌氣處理即可。 本發明的另一特點中，將氮氧化矽層澱積於基板上的 一個CVD法包含至少一個循環包含下列步驟：（i)將矽有 機先質引至有基板位於其中的澱積區中；（ii)對澱積區滌 氣；和（iii)將臭氧和氮來源（如：氨（NH3))引至澱積區中。 這些步驟連續進行。臭氧和氮之引入可分別或同時以任何 順序進行，並可視情況地藉對澱積槽滌氣的步驟區隔。此 循環多澱積一層氮氧化矽。可視達到所欲膜厚度所需地多 次重覆此循環，只要各循環之間經額外的澱積區滌氣處理 即可。 讀完本發明的下列詳述並參考附圖，會瞭解本發明的 其他特點和優點。 【實施方式】 本發明提出CVD和ALD法，其於低溫（即，低於450 °C )將氧化矽和氮氧化矽膜澱積於基板上且同時維持良好 漸近覆蓋性質。本發明之方法中，金屬矽有機先質和臭氧 倂用。本發明之澱積法可用以澱積高k和低k介電物。 欲塗覆的基板可以是具金屬或親水表面且於所用加工 溫度安定的任何材料。嫻於此技術者能夠不費力地辨別出 適當材料。適當基板包括矽、陶瓷、金屬、塑膠、玻璃和 有機聚合物。較佳基板包括矽、鎢和鋁。此基板可經事先 -8 - (5) (5)200422424 處理以賦予、去除及標準化化學品補充和/或基板表面性 質。基板之選擇視特定應用而定。 矽有機先質包括會揮發的任何分子，其結構中包含一 或多個砂原子和一或多個有機離去基或配位基（其可藉含 有反應性氧的化合物（如：臭氧）和/或含有反應性氮的化 合物（如：氨）而與矽分離）。較佳情況中，矽有機先質僅 含括一或多個矽原子和可藉含有反應性氧的化合物和/或 含有反應性氮的化合物而與矽分離的一或多個離去基。更 佳情況中，矽有機先質可以是於室溫或接近室溫（如：與 室溫差距l〇〇°C爲佳或甚至與室溫差距50°c更佳）爲揮發 性液體者。嫻於此技術者能夠不費力地辨別出適當矽有機 先質。適當矽有機先質的較佳實例包括，但不限於，四甲 基二矽氧烷（TMDSO)、六甲基二矽氧烷（HMDSO)、六甲基 二矽氮烷（HDMSN)和肆（乙基甲基胺）化矽（TEMASi)、烷基 胺基矽烷、烷基胺基二矽烷、烷基矽烷、烷氧基矽烷、烷 基矽醇和烷氧基矽醇。一個實施例中，矽先質是胺基矽烷 或矽烷基胺化物。這些化合物含有S i -N鍵，此鍵極不穩 定且容易於低溫與臭氧反應。先質氣流速率可由1 sccm至 lOOOsccm。先質氣體流率以10至5 00sccm爲佳。 相較於使用慣用氧化劑（如：水（H20)或氧氣（〇2))，臭 氧氣體有助於使矽有機先質於較低溫度之氧化反應。先質 與臭氧之氧化反應於低於約45 0°C (低至約200 °C )的溫度 得到良好結果。此溫度範圍以300t至40(TC爲佳。使用 臭氧代替水的其他優點包括去除羥基鍵結和羥基鍵結造成 -9 - (6) (6)200422424 之膜中之固定/捕集電荷和較少碳的情況。一個較佳實施 例中僅使用臭氧。另一較佳實施例中，臭氧以與氧之摻合 物使用。臭氧氣體流率範圍由1 0至2000sccm。較佳情況 中，臭氧氣體流率由100至2000sccm。較佳情況中，引 至澱積區中的臭氧濃度由10至400克/立方米，150至 3 00克/立方米更佳。至於特定實例，使用TEMASi和臭 氧，於400°C、5托耳，澱積具極佳漸近覆蓋和高縱橫比 溝槽及均勻度的3102膜。先質氣流約30sccm，臭氧濃度 是25 0克/立方米。 所欲膜是氮氧化物時，額外使用氮來源。此氮來源可 以是可揮發且其結構中含有反應性氮的任何化合物。適當 氮來源包括，但不限於，原子態氮、氮氣、氨、聯胺、院 基聯胺、烷基胺之類。以氨爲佳。此氮來源氣體流入澱積 槽的流率範圍由10至2000sccm。氮來源氣體流率以100 至2000sccm爲佳。 許多實施例中，稀釋氣體與一或多種反應物氣體（如 :先質、臭氧、氮來源）倂用以改善均勻度。稀釋氣體可 以是任何非反應性氣體。適當稀釋氣體包括氮、氦、氣、 氬、氣氣。就成本考量，較佳者是氮氣和氬氣。稀釋氣體 流率通常由lsccm至lOOOsccm。 一些CVD實施例和每一個ALD實施例中，藉滌氣步 驟，將一或多種反應物氣體引至澱積槽中。此滌氣可藉低 壓或真空幫浦實施。或者，滌氣的實施方式可以是將惰性 滌氣氣體引至澱積槽中。適當櫞氣氣體包括氮、氦、氣、 -10- (7) 2004224 24 氬、氙氣。或者可以倂用抽取和滌氣氣體。 所有情況中，前述氣體流率視槽尺寸和抽取 壓力必須在要求範圍內。所須加工壓力視澱積法 基本上在1毫托耳至760托耳範圍內，以0.5-7 佳。 本發明的一個特點中，CVD法用以使氧化 於基板上，其包含至少一個循環包含下列步驟： 機先質引至有基板存在的澱積區中；和（Π)將臭 積區中。本發明的此特點中，步驟可同時或連續 質和臭氧反應，在基板上形成氧化矽層。澱積區 於0.5至20托耳且溫度低於400°C爲佳。 此澱積法可以下列式表示：
Si先質 + 〇3 — Si02 + 副產物 例如，此澱積法可以一或多個下列式說明： Si(NR1R2)4 + 〇3 — Si02+ 副產物
Si(NR1R2)4-wLw + 〇3 -> Si02+ 副產物 其中R1和R2分別選自氫、C】-C6烷基、C5-、鹵素和經取代的烷基和環狀烷基，w等於1、 ，L選自氫或鹵素。或者，澱積法可以一或多個 明：
Si2(NR】R2)6 + 03 — Si02 + 副產物
Si2(NR]R )6-zLz + 〇3 Si〇2 + 副產物 其中R1和R2分別選自氫、（^-(：6烷基、C5-、鹵素和經取代的烷基和環狀烷基，z等於1、2 力而定， 而定，但 .〇托耳爲 矽層澱積 (i)將矽有 氧引至澱 進行。先 壓力維持 (1) (2) (3) C 6環院基 2、3 或 4 下列式說 (4) (5) C 6環烷基 、3、 4、 -11 - (8) (8)200422424 5或6，L選自氫或鹵素。 本發明的另一特點中，CVD法用以使氮氧化矽層澱 積於基板上，其包含至少一個循環包含下列步驟：（i)將矽 有機先質引至有基板存在的澱積區中；（ii)將臭氧引至澱 積區中；和（iii)將氮來源引至澱積區中。同樣地，這些步 驟可同時或連續進行。先質、臭氧和氮來源反應，在基板 上形成氮氧化矽層。澱積區壓力維持於0.5至20托耳且 溫度低於400°C爲佳。 此澱積法可以下列式表示：
Si先質+氮來源+ 03— SiOxNy +副產物 （6) 例如，此澱積法可以一或多個下列式說明：
SiCNR1!^2、十NH3 + Ο 3 — S i Q xNy + 副產物 （7) SKNRWh-wLw + NHs + Ch-^ SiOxNy +副產物 (8) 其中R1和R2分別選自氫、烷基、C5-C6環烷基 、鹵素和經取代的烷基和環狀烷基，w等於1、2、3或4 ，L選自氫或鹵素。或者，澱積法可以一或多個下列式說 明： S i2 (NR 1 R2) 6+ N Η3 + Ο 3 — S i Ο XNy + 副產物 (9)
SiHNI^RyrzLz + NHs + C^— SiOxNy + 副產物 (10) 其中R1和R2分別選自氫、C^-CU烷基、C5-C6環垸基 、鹵素和經取代的烷基和環狀烷基，z等於1、2、3、4、 5或6，L選自氫或鹵素。臭氧和氮來源氣體可以同時或 分別引入。臭氧和氮來源氣體以混合物形式引入爲佳。 於低壓低熱CVD法中澱積膜的前述方法述於附圖1 200422424 Ο) 。附圖1中，矽晶圓100置於澱積槽101中。澱積槽101 中，晶圓100以加熱器102,加熱至澱積溫度。此實例、中， 藉由將惰性稀釋氣流1 03引至槽1 0 1中而建立加工壓力。 之後，使用半導體和薄膜工業中慣用的氣體輸送法，矽有 機先質104和臭氧氧化劑105(和NH3 106，欲澱積SiOxNy 時）氣流引至槽中。經過獲致目標膜厚度所須的適當時間 之後，中止矽先質和氧化劑/ NH3氣流，調整稀釋用惰性 氣流，以滌除槽中的殘留反應物。經適當滌氣時間之後， 晶圓離開加工槽並回到匣。 本發明的另一特點中，ALD法將氧化矽層澱稹於基 板上，其包含至少一個循環包含下列步驟：（i)將矽有機先 質引至有基板位於其中的澱積區中Γ (Π)對澱積區滌氣； 和（iii)將臭氧引至澱.積區中，以於基板上形成氧化矽層。 本發明的此特點中，步驟連續進行。此循環多澱積一層氧 化矽。可視達到所欲膜厚度所需地多次重覆此循環，只要 各循環之間經額外的澱積區滌氣處理即可。此方法的總反 應與前述式1 _5中所示者相同。但藉滌氣將反應分成數個 步驟，以確保單層生長。 本發明的另一特點中，CVD法將氮氧化矽層澱積於 基板上，其包含至少一個循環包含下列步驟：（i)將矽有機 先質引至有基板位於其中的澱積區中；（ii)對澱積區滌氣 •，和（iii)將臭氧和氮來源引至澱積區中。這些步驟連續進 行。臭氧和氮之引入可分別或同時以任何順序進行，並可 視情況地對澱積槽滌氣的步驟區隔。此循環多澱積一層氮 -13- (10) (10)200422424 氧化矽。可視達到所欲膜厚度所需地多次重覆此循環，只 要各循環之間經額外的澱積區滌氣處理即可。此方法的總 反應與則述式6 -1 0中所不者相同。但藉條氣將反應分成 數個步驟，以確保單層生長。 ALD有數個優於傳統CVD之處。第一，ALD可於更 低溫度進行。第二，ALD可製得超薄平整膜。事實上， ALD可以將膜厚度控制至原子規模並可用於”微細設計的” 複合薄膜。第三，ALD在非平面基板上提供薄膜的平整 覆蓋。但ALD的加工時間通常比較長，這是因爲每次循 環所須脈衝數較多之故。 藉ALD澱積膜的前述方法依順序示於附圖2的步驟 序ν'列中。附圖2中，:排徐槽中的氣體之後，晶圓‘200移至 澱積區201中並置於晶圓加熱器202上，晶圓藉此加熱器 加熱至澱積溫度。澱積溫度可由1 00 °C至5 50 °C，但以低 於約450°C爲佳，在3 00°C至400°C範圍內更佳。稀釋氣 體203以穩定流率進入澱積區201。此氣體是Ar、He、 Ne、Xe、N2或其他非反應性氣體。壓力建立於加工壓力 。加工壓力可由1〇〇毫托耳至10托耳，以200毫托耳至 1 ·5托耳爲佳。達穩定壓力條件之後，經過適當時間以將 任何殘留氣體自晶圓200表面移開之後，開始ALD澱積 。首先，開啓適當閥，矽有機先質蒸汽流204脈衝引至澱 積區。蒸汽流率可由1至lOOOsccm，以5至lOOsccm爲 佳。蒸汽可經非反應性氣體（如：Ar、N2、He、Ne或Xe) 稀釋。稀釋氣體流率可由l〇〇sccm至l〇〇〇SCCm。先質脈 (11) (11)2004224 24 衝時間可由0 · 0 1秒至1 0秒並以在〇 · 〇 5至2秒範圍內爲 佳。先質脈衝終了時，电止先質蒸汽流入澱積區201。之 後’至澱積區的蒸汽輸入管線以非反應性氣體2 0 3滌氣達 適當時間。此滌氣期間內，非反應性氣體203經由蒸汽輸 入管線進入槽。此非反應性氣體可以是Ar、He、Ne、Xe 或N2。滌氣氣體流率以與在先質脈衝步驟期間內通過管 線的總氣體流率相同爲佳。蒸汽滌氣時間可由0· 1秒至1 0 秒，但以0.5秒至5秒爲佳。活化適當閥（未示），蒸汽滌 氣步驟終了時，反應物氣流進入澱積區201。反應物氣體 是臭氧205(用以澱積Si02時）及臭氧205和氨206(用以澱 積SiOxNy時）。反應物氣體總流率可由100至2000Sccm， 以在200.至lOOOsccm範圍內爲佳。臭氧濃度範圍是150 至300克/立方米，以約200克/立方米爲佳。用以澱積 Si OxNy，氧化劑和氨流比可由0.2至10，此視所欲組成和 溫度而定。反應物脈衝時間可由0.1秒至10秒，但以0.5 秒至3秒爲佳。反應物脈衝完全之後，至澱積區20 1的反 應物輸送管線以非反應性氣流203滌氣。此非反應性氣體 可以是He、Ne、Ar、Xe或N2。滌氣流率以氣氣體流率 以與在反應物脈衝步驟期間內通過反應物輸送管線的總氣 體流率相同爲佳。反應物脈衝之後，多次重覆下一個先質 脈衝和序列，直到獲致所欲膜厚度爲止。 可以在一或多個使用滌氣氣體的滌氣步驟期間內含括 抽取地修飾前述序列。也可以在一或多個滌氣步驟中以抽 取代替氣體滌氣地修飾前述序列。 -15- (12) (12)200422424 本方法可用於經摻雜和未經摻雜的。(^和Si〇xNyB 成。本方法於積體電路（ic)製造方面的典型應用包括，但 不限於’金屬前介電物（PMD)、淺溝槽隔絕（STI)、隔離器 、金屬矽酸鹽閘極介電物和低k介電物。 已經以專利法要求的細節和特定要求詳細描述本#明 ，Letters Patent欲聲明和欲保護者列於所附申請專利範 圍中。 【圖式簡單說明】 附圖1所示者是本發明的CVD法。 附圖2所示者是本發明的ALD法。 主要元件對照表 100 矽晶圓 101 澱積槽 1 02 加熱器 1 03 稀釋氣體 1 〇4 矽有機先質 105 臭氧 1 06 氮來源（nh3) 2〇〇 晶圓 201 澱積區 202 晶圓加熱器 203 稀釋氣體 200422424 (13) 204 205 206 矽有機先質 臭氧 氮來源（nh3)

Claims (1)

  1. 200422424 (1) 拾、申請專利範圍 1. 一種將氧化矽澱積於基板上之方法，其步驟包含將 矽有機先質和臭氧引至有基板位於其中的澱積區中。 2. 如申請專利範圍第1項之方法，其中澱積藉化學蒸 鍍法進行，並包含至少一個循環包含下列步驟： (i) 將矽有機先質引至有基板位於其中的澱積區中； 和 (ii) 將臭氧引至澱積區中。 3 .如申請專利範圍第2項之方法，其中步驟同時進行 〇 4.如申請專利範圍第2項之方法，其中步驟連續進行 〇 5 .如申請專利範圍第1項之方法，其中澱積藉原子層 澱積法進行，並包含至少一個循環包含下列連續步驟： (i) 將矽有機先質引至有基板位於其中的源積區中； (ii) 對澱積區滌氣；和 (iii) 將臭氧引至澱積區中。 6·如申請專利範圍第1項之方法，其中矽有機先質選 自四甲基二矽氧烷（TMDSO)、六甲基二矽氧烷（HMDSO)、 六甲基二矽氮烷（HDMSN)和肆（乙基甲基胺）化矽（TEMASi) 、烷基矽烷、烷基胺基矽烷、烷基胺基二矽烷、烷氧基矽 烷、烷基矽醇和烷氧基矽醇。 7.如申請專利範圍第1項之方法，其中矽有機先質具 式 Si(NR】R2)4-wLw， -18- (2) (2)2004224 24 其中R1和R2分別選自氫、C^c6烷基、c5_c6環烷基 、_素和經取代的院基和環，狀院基，w等於1、2、3或；4 ，L選自氫或鹵素。 8 ·如申請專利範圍第1項之方法，其中矽有機先質具 式 SidNI^R2)"!^， 其中R】和R2分別選自氫、C ! - C 6烷基、c 5 - C 6環烷基 、鹵素和經取代的烷基和環狀烷基，z等於]、2、3、4、 5或6，L選自氣或鹵素。 9 ·如申請專利範圍第1項之方法，其中激積區壓力維 持在1毫托耳至760托耳範圍內。 1 〇 ·如申請專利範圍第1項之方法，其中激積法實施 溫度介於200°c至400°C之間。 11·如申請專利範圍第1項之方法，其中臭氧引至澱 積區，使得臭氧濃度在1 0至400克/立方米範圍內。 1 2 ·如申請專利範圍第1項之方法，其中基板是矽基 板、陶瓷、金屬、塑膠、玻璃和有機聚合物。 1 3 . —種用以將氮氧化矽澱積於基板上的方法，其步 驟包含將矽有機先質、臭氧和氮來源引至有基板存在的澱 積區中。 14·如申請專利範圍第13項之方法，其中澱積藉化學 蒸鍍法進行，其包含至少一個循環包含下列步驟： (i) 將矽有機先質引至有基板位於其中的澱積區中； (ii) 將臭氧引至澱積區中；和 (iii) 將氮來源弓丨至澱積區中。 -19 - (3) (3)2004224 24 1 5 .如申J靑專利範圍第1 4項之方法，其中步驟同時進 行。 1 6 .如申請專利範圍第1 4項之方法’其中步驟連續進 行。 1 7 .如申請專利範圍第1 3項之方法，其中澱積藉原子 層澱積法進行，並包含至少一個循環包含下列連續步驟： (i) 將矽有機先質引至有基板位於其中的澱積區中； (ii) 對澱積區滌氣；和 (iii) 將臭氧和氮來源引至澱積區中。 1 8 .如申請專利範圍第1 7項之方法，其中臭氧和氮來 源分別以任何順序引入。 19. 如申請專利範圍第17項之方法，其中臭氧和氮來 源同時引入。 20. 如申請專利範圍第13項之方法，其中矽有機先質 選自四甲基二矽氧烷（TMDSO)、六甲基二矽氧烷（HMDSO) 、六甲基二矽氮烷（HDMSN)和肆（乙基甲基胺）化矽 (TEMASi)、烷基矽烷、烷基胺基矽烷、烷基胺基二矽烷 、烷氧基矽烷、烷基矽醇和烷氧基矽醇。 2 1 .如申請專利範圍第1 3項之方法，其中矽有機先質 具式 ， 其中R1和R2分別選自氫、C】-C6烷基、C5-C6環烷基 、鹵素和經取代的烷基和環狀烷基，w等於1、2、3或4 ，L選自氫或鹵素。 2 2 ·如申請專利範圍第1 3項之方法，其中矽有機先質 -20- (4) (4)200422424 具式 ， 其中R1和R2分別選自氫、烷基、C5-C6環烷基 、鹵素和經取代的烷基和環狀烷基，z等於1、2、3、4、 5或6，L選自氫或鹵素。 23.如申請專利範圍第13項之方法，其中氮來源選自 原子態氮、氮氣、氨、聯胺、烷基聯胺和烷基胺。 24·如申請專利範圍第13項之方法，其中澱積區維持 於1毫托耳至760托耳壓力範圍內。 2 5 .如申請專利範圍第1 3項之方法，其中澱積於低於 400°C的溫度實施。 2 6 ·如申g靑專利範圍第1 3項之方法，其中引至澱積區 中的臭氧使得臭氧濃度在10至400克/立方米範圍內。 2 7 ·如申請專利範圍第1 3項之方法，其中基板是砂基 板、陶瓷、金屬、塑膠、玻璃和有機聚合物。 -21 -
TW092122655A 2002-08-18 2003-08-18 Low temperature deposition of silicon oxides and oxynitrides TW200422424A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40436302P 2002-08-18 2002-08-18

Publications (1)

Publication Number Publication Date
TW200422424A true TW200422424A (en) 2004-11-01

Family

ID=31888354

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092122655A TW200422424A (en) 2002-08-18 2003-08-18 Low temperature deposition of silicon oxides and oxynitrides

Country Status (8)

Country Link
US (1) US20060178019A1 (zh)
EP (1) EP1535321A4 (zh)
JP (1) JP2005536055A (zh)
KR (1) KR20050069986A (zh)
CN (1) CN1868041A (zh)
AU (1) AU2003259950A1 (zh)
TW (1) TW200422424A (zh)
WO (1) WO2004017383A2 (zh)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784049B2 (en) * 2002-08-28 2004-08-31 Micron Technology, Inc. Method for forming refractory metal oxide layers with tetramethyldisiloxane
US7030042B2 (en) 2002-08-28 2006-04-18 Micron Technology, Inc. Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
JP2005213633A (ja) * 2004-02-02 2005-08-11 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
JP4595702B2 (ja) * 2004-07-15 2010-12-08 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261434A (ja) * 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
JP2007019145A (ja) 2005-07-06 2007-01-25 Tokyo Electron Ltd シリコン酸窒化膜の形成方法、シリコン酸窒化膜の形成装置及びプログラム
US20070054505A1 (en) * 2005-09-02 2007-03-08 Antonelli George A PECVD processes for silicon dioxide films
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
JP5149273B2 (ja) 2006-04-03 2013-02-20 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 化学気相堆積による窒化珪素膜及び／又はシリコンオキシナイトライド膜の堆積方法
SG171683A1 (en) * 2006-05-12 2011-06-29 Advanced Tech Materials Low temperature deposition of phase change memory materials
US8530361B2 (en) 2006-05-23 2013-09-10 Air Products And Chemicals, Inc. Process for producing silicon and oxide films from organoaminosilane precursors
US7875312B2 (en) * 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
EP2511280A1 (en) 2006-11-02 2012-10-17 Advanced Technology Materials, Inc. Germanium amidinate complexes useful for CVD/ALD of metal thin films
US20080207007A1 (en) * 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
WO2009039251A1 (en) * 2007-09-18 2009-03-26 L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming silicon-containing films
US8501637B2 (en) * 2007-12-21 2013-08-06 Asm International N.V. Silicon dioxide thin films by ALD
JP4611414B2 (ja) * 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US8298628B2 (en) * 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
JP5190307B2 (ja) * 2008-06-29 2013-04-24 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
US8129555B2 (en) * 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
KR101410429B1 (ko) 2008-09-05 2014-07-03 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
US8703624B2 (en) * 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US9460913B2 (en) 2010-12-27 2016-10-04 Tokyo Electron Limited Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
US9466476B2 (en) 2010-12-27 2016-10-11 Tokyo Electron Limited Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
JP2012138500A (ja) * 2010-12-27 2012-07-19 Tokyo Electron Ltd タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
JP2013077805A (ja) * 2011-09-16 2013-04-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US8586487B2 (en) * 2012-01-18 2013-11-19 Applied Materials, Inc. Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films
US9234276B2 (en) * 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
CN102851733B (zh) * 2012-09-04 2016-08-17 苏州晶湛半导体有限公司 氮化镓基材料及器件的制备系统和制备方法
US9318330B2 (en) * 2012-12-27 2016-04-19 Renesas Electronics Corporation Patterning process method for semiconductor devices
KR102106885B1 (ko) * 2013-03-15 2020-05-06 삼성전자 주식회사 실리콘 산화막 증착용 전구체 조성물 및 상기 전구체 조성물을 이용한 반도체 소자 제조 방법
US9343317B2 (en) 2013-07-01 2016-05-17 Micron Technology, Inc. Methods of forming silicon-containing dielectric materials and semiconductor device structures
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
KR102481671B1 (ko) 2015-08-26 2022-12-27 엘지전자 주식회사 경도 및 내마모성이 우수한 고투명도 dlc막 구현 기술
JP6929279B2 (ja) * 2015-10-22 2021-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ＳｉＯおよびＳｉＮを含む流動性膜を堆積させる方法
TWI753794B (zh) 2016-03-23 2022-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 形成含矽膜之組成物及其製法與用途
US9812320B1 (en) * 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9847221B1 (en) * 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
US11735413B2 (en) * 2016-11-01 2023-08-22 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-k films to fill surface features
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide
KR102334832B1 (ko) 2017-07-13 2021-12-06 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US20200040454A1 (en) * 2018-08-06 2020-02-06 Lam Research Corporation Method to increase deposition rate of ald process
SG11202105182QA (en) * 2018-12-04 2021-06-29 Applied Materials Inc Cure methods for cross-linking si-hydroxyl bonds

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171477A (en) * 1976-03-16 1979-10-16 International Business Machines Corporation Micro-surface welding
US4676879A (en) * 1985-04-12 1987-06-30 Becromal S.P.A. Method for the production of an aluminum foil for electrolytic _capacitors, and electrolytic capacitors thus produced
JPH04151839A (ja) * 1990-10-16 1992-05-25 Kawasaki Steel Corp シリコンオキシナイトライド膜の製造方法
US5195019A (en) * 1992-02-10 1993-03-16 Hertz Jerome J Bonding fired multilayer capacitors into a stack
US5744261A (en) * 1992-05-21 1998-04-28 Wilson Greatbatch Ltd. Insulating inclosure for lithium batteries
US5384685A (en) * 1992-09-18 1995-01-24 Pinnacle Research Institute, Inc. Screen printing of microprotrusions for use as a space separator in an electrical storage device
US5821033A (en) * 1992-09-18 1998-10-13 Pinnacle Research Institute, Inc. Photolithographic production of microprotrusions for use as a space separator in an electrical storage device
US5748438A (en) * 1993-10-04 1998-05-05 Motorola, Inc. Electrical energy storage device having a porous organic electrode
US5862035A (en) * 1994-10-07 1999-01-19 Maxwell Energy Products, Inc. Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes
US6233135B1 (en) * 1994-10-07 2001-05-15 Maxwell Energy Products, Inc. Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes
US5660737A (en) * 1995-05-17 1997-08-26 Ventritex, Inc. Process for making a capacitor foil with enhanced surface area
DE19528746C1 (de) * 1995-08-04 1996-10-31 Siemens Ag Verfahren zum Erzeugen einer Siliziumdioxidschicht auf Oberflächenabschnitten einer Struktur
US5801917A (en) * 1996-06-03 1998-09-01 Pacesetter, Inc. Capacitor for an implantable cardiac defibrillator
US5980977A (en) * 1996-12-09 1999-11-09 Pinnacle Research Institute, Inc. Method of producing high surface area metal oxynitrides as substrates in electrical energy storage
US5922215A (en) * 1996-10-15 1999-07-13 Pacesetter, Inc. Method for making anode foil for layered electrolytic capacitor and capacitor made therewith
JP3210593B2 (ja) * 1997-02-17 2001-09-17 日本碍子株式会社 リチウム二次電池
US6110321A (en) * 1997-02-28 2000-08-29 General Electric Company Method for sealing an ultracapacitor, and related articles
US5814082A (en) * 1997-04-23 1998-09-29 Pacesetter, Inc. Layered capacitor with alignment elements for an implantable cardiac defibrillator
US5963418A (en) * 1997-05-02 1999-10-05 Cm Components, Inc. Multiple anode high energy density electrolytic capacitor
US6040082A (en) * 1997-07-30 2000-03-21 Medtronic, Inc. Volumetrically efficient battery for implantable medical devices
US5930109A (en) * 1997-11-07 1999-07-27 Pacesetter, Inc. Electrolytic capacitor with multiple independent anodes
US5968210A (en) * 1997-11-12 1999-10-19 Pacesetter, Inc. Electrolytic capacitor and method of manufacture
US5983472A (en) * 1997-11-12 1999-11-16 Pacesetter, Inc. Capacitor for an implantable cardiac defibrillator
AU1592899A (en) * 1997-12-02 1999-06-16 Gelest, Inc. Silicon based films formed from iodosilane precursors and method of making th e same
US6099600A (en) * 1998-04-03 2000-08-08 Medtronic, Inc. Method of making a vacuum-treated liquid electrolyte-filled flat electrolytic capacitor
US6402793B1 (en) * 1998-04-03 2002-06-11 Medtronic, Inc. Implantable medical device having flat electrolytic capacitor with cathode/case electrical connections
US6493212B1 (en) * 1998-04-03 2002-12-10 Medtronic, Inc. Implantable medical device having flat electrolytic capacitor with porous gas vent within electrolyte fill tube
US6032075A (en) * 1998-04-03 2000-02-29 Medtronic, Inc. Implantable medical device with flat aluminum electolytic capacitor
US6141205A (en) * 1998-04-03 2000-10-31 Medtronic, Inc. Implantable medical device having flat electrolytic capacitor with consolidated electrode tabs and corresponding feedthroughs
US6445948B1 (en) * 1998-04-03 2002-09-03 Medtronic, Inc. Implantable medical device having a substantially flat battery
US6118652A (en) * 1998-04-03 2000-09-12 Medtronic, Inc. Implantable medical device having flat electrolytic capacitor with laser welded cover
US6157531A (en) * 1998-04-03 2000-12-05 Medtronic, Inc. Implantable medical device having flat electrolytic capacitor with liquid electrolyte fill tube
US6110233A (en) * 1998-05-11 2000-08-29 Cardiac Pacemakers, Inc. Wound multi-anode electrolytic capacitor with offset anodes
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
US6191931B1 (en) * 1998-08-28 2001-02-20 Pacesetter, Inc. Aluminum electrolytic capacitor with conductive feed-through for implantable medical device
US6556863B1 (en) * 1998-10-02 2003-04-29 Cardiac Pacemakers, Inc. High-energy capacitors for implantable defibrillators
US6275729B1 (en) * 1998-10-02 2001-08-14 Cardiac Pacemakers, Inc. Smaller electrolytic capacitors for implantable defibrillators
US6299752B1 (en) * 1999-03-10 2001-10-09 Pacesetter, Inc. Very high volt oxide formation of aluminum for electrolytic capacitors
US6465044B1 (en) * 1999-07-09 2002-10-15 Silicon Valley Group, Thermal Systems Llp Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone
EP1071147A1 (en) * 1999-07-19 2001-01-24 Toshiba Battery Co., Ltd. Battery pack
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
EP1130633A1 (en) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. A method of depositing silicon oxynitride polimer layers
US6426864B1 (en) * 2000-06-29 2002-07-30 Cardiac Pacemakers, Inc. High energy capacitors for implantable defibrillators
KR100467366B1 (ko) * 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6409776B1 (en) * 2000-06-30 2002-06-25 Medtronic, Inc. Implantable medical device having flat electrolytic capacitor formed with nonthrough-etched and through-hole punctured anode sheets
US6522525B1 (en) * 2000-11-03 2003-02-18 Cardiac Pacemakers, Inc. Implantable heart monitors having flat capacitors with curved profiles
US6833987B1 (en) * 2000-11-03 2004-12-21 Cardiac Pacemakers, Inc. Flat capacitor having an active case
US6571126B1 (en) * 2000-11-03 2003-05-27 Cardiac Pacemakers, Inc. Method of constructing a capacitor stack for a flat capacitor
US6509588B1 (en) * 2000-11-03 2003-01-21 Cardiac Pacemakers, Inc. Method for interconnecting anodes and cathodes in a flat capacitor
US6684102B1 (en) * 2000-11-03 2004-01-27 Cardiac Pacemakers, Inc. Implantable heart monitors having capacitors with endcap headers
US6687118B1 (en) * 2000-11-03 2004-02-03 Cardiac Pacemakers, Inc. Flat capacitor having staked foils and edge-connected connection members
US6699265B1 (en) * 2000-11-03 2004-03-02 Cardiac Pacemakers, Inc. Flat capacitor for an implantable medical device
US7107099B1 (en) * 2000-11-03 2006-09-12 Cardiac Pacemakers, Inc. Capacitor having a feedthrough assembly with a coupling member
US7456077B2 (en) * 2000-11-03 2008-11-25 Cardiac Pacemakers, Inc. Method for interconnecting anodes and cathodes in a flat capacitor
US7355841B1 (en) * 2000-11-03 2008-04-08 Cardiac Pacemakers, Inc. Configurations and methods for making capacitor connections
US6844604B2 (en) * 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US6736956B1 (en) * 2001-05-07 2004-05-18 Pacesetter, Inc. Non-uniform etching of anode foil to produce higher capacitance gain without sacrificing foil strength
KR20030018134A (ko) * 2001-08-27 2003-03-06 한국전자통신연구원 조성과 도핑 농도의 제어를 위한 반도체 소자의 절연막형성 방법
US6946220B2 (en) * 2001-10-19 2005-09-20 Wilson Greatbatch Technologies, Inc. Electrochemical cell having a multiplate electrode assembly housed in an irregularly shaped casing
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7479349B2 (en) * 2002-12-31 2009-01-20 Cardiac Pacemakers, Inc. Batteries including a flat plate design
US20040220627A1 (en) * 2003-04-30 2004-11-04 Crespi Ann M. Complex-shaped ceramic capacitors for implantable cardioverter defibrillators and method of manufacture
US7180727B2 (en) * 2004-07-16 2007-02-20 Cardiac Pacemakers, Inc. Capacitor with single sided partial etch and stake

Also Published As

Publication number Publication date
EP1535321A4 (en) 2009-05-27
WO2004017383A3 (en) 2004-07-22
JP2005536055A (ja) 2005-11-24
AU2003259950A8 (en) 2004-03-03
US20060178019A1 (en) 2006-08-10
KR20050069986A (ko) 2005-07-05
CN1868041A (zh) 2006-11-22
EP1535321A2 (en) 2005-06-01
WO2004017383A2 (en) 2004-02-26
AU2003259950A1 (en) 2004-03-03

Similar Documents

Publication Publication Date Title
TW200422424A (en) Low temperature deposition of silicon oxides and oxynitrides
KR102692947B1 (ko) SiO 및 SiN을 포함하는 유동성 막들을 증착시키는 방법들
TWI515794B (zh) 用於形成含氧化矽之薄膜的方法
KR100988096B1 (ko) 실리콘 함유 필름의 플라즈마 시클릭 화학 증기 증착법
US7972978B2 (en) Pretreatment processes within a batch ALD reactor
US9984868B2 (en) PEALD of films comprising silicon nitride
KR101060911B1 (ko) Ａｌｄ 또는 ｃｖｄ 공정을 통한 금속 함유 막의 제조
KR102415780B1 (ko) Ｐｅ-ａｌｄ에 의한 유기 공동-반응물과 함께 규소 전구체를 사용한 규소-기반 필름에의 탄소 및/또는 질소 합체
TW200403726A (en) Low temperature dielectric deposition using aminosilane and ozone
KR20170038023A (ko) ＳｉＣＯＮ의 저온 분자층 증착
TW201816166A (zh) 具碳，氧及氮成分控制之沉積SiCON的方法
US11107674B2 (en) Methods for depositing silicon nitride
JP2006505954A (ja) 高ｋ誘電体の窒化物形成
TW201443274A (zh) 使用二矽氧烷先質之膜的沉積
KR20220062111A (ko) 할로겐화된 실릴아미드들을 사용하여 SiCO(N)를 원자층 증착하는 방법들