TW200417586A - Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device - Google Patents

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device Download PDF

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Publication number
TW200417586A
TW200417586A TW92131712A TW92131712A TW200417586A TW 200417586 A TW200417586 A TW 200417586A TW 92131712 A TW92131712 A TW 92131712A TW 92131712 A TW92131712 A TW 92131712A TW 200417586 A TW200417586 A TW 200417586A
Authority
TW
Taiwan
Prior art keywords
porous film
film
forming
composition
carbons
Prior art date
Application number
TW92131712A
Other languages
English (en)
Chinese (zh)
Inventor
Tsutomu Ogihara
Fujio Yagihashi
Hideo Nakagawa
Masaru Sasago
Original Assignee
Shinetsu Chemical Co
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co, Matsushita Electric Industrial Co Ltd filed Critical Shinetsu Chemical Co
Publication of TW200417586A publication Critical patent/TW200417586A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/02—Polysilicates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
TW92131712A 2002-11-13 2003-11-12 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device TW200417586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002329128A JP4170734B2 (ja) 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

Publications (1)

Publication Number Publication Date
TW200417586A true TW200417586A (en) 2004-09-16

Family

ID=32375709

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92131712A TW200417586A (en) 2002-11-13 2003-11-12 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Country Status (4)

Country Link
US (2) US7309722B2 (https=)
JP (1) JP4170734B2 (https=)
CN (1) CN100394559C (https=)
TW (1) TW200417586A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4893905B2 (ja) * 2004-08-31 2012-03-07 独立行政法人産業技術総合研究所 ゼオライト用原料液体、ゼオライト結晶作成方法、ゼオライト用原料液体の作成方法、およびゼオライト薄膜
JP4684619B2 (ja) * 2004-10-22 2011-05-18 東京応化工業株式会社 シリカ系被膜形成用塗布液、シリカ系被膜形成用塗布液の調製方法
US7427570B2 (en) * 2005-09-01 2008-09-23 Micron Technology, Inc. Porous organosilicate layers, and vapor deposition systems and methods for preparing same
DE102006029849A1 (de) * 2006-06-27 2008-01-03 Nanoscape Ag Beschichtetes Molekularsieb
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
JP2008201832A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置
JP2008201833A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 膜形成用組成物、低誘電率絶縁膜、低誘電率絶縁膜の形成方法及び半導体装置
JP4866290B2 (ja) * 2007-04-03 2012-02-01 信越化学工業株式会社 ゼオライト含有膜の製造方法
JP5231748B2 (ja) * 2007-04-03 2013-07-10 信越化学工業株式会社 ゼオライト微粒子の製造方法、安定化されたゼオライト及びその利用方法
WO2010021829A1 (en) * 2008-08-20 2010-02-25 Illinois Tool Works Inc. Mis-fuel inhibitor
JP6459489B2 (ja) * 2014-03-11 2019-01-30 三菱マテリアル株式会社 シリカ多孔質膜形成用液組成物及びその液組成物から形成されたシリカ多孔質膜
CN104459420B (zh) * 2014-12-30 2017-07-28 中国科学院微电子研究所 一种tsv孔内介质层的电学性能检测方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2513983B1 (fr) * 1981-09-14 1986-10-24 Raffinage Cie Francaise Procede de preparation de zeolites synthetiques et zeolites obtenues par ce procede
JPS62220531A (ja) * 1986-03-24 1987-09-28 Central Glass Co Ltd 被覆用組成物
JP2589792B2 (ja) * 1988-12-27 1997-03-12 松下電器産業株式会社 不純物導入方法
NO912006D0 (no) 1991-05-24 1991-05-24 Sinvent As Fremgangsmaate for fremstilling av et silika-aerogel-lignende materiale.
JPH09194298A (ja) 1995-04-25 1997-07-29 Rikagaku Kenkyusho シリカ−界面活性剤ナノ複合体及びその製造方法
JP3813268B2 (ja) * 1996-03-25 2006-08-23 触媒化成工業株式会社 低誘電率シリカ系被膜形成用塗布液および低誘電率被膜付基材
US6084096A (en) * 1998-04-09 2000-07-04 Air Products And Chemicals, Inc. Triethylenediamine and piperazine synthesis using zeolite catalysts modified with a silicon-containing compound
JP2000044875A (ja) 1998-05-18 2000-02-15 Jsr Corp 膜形成用組成物、膜の形成方法および低密度膜
DE19829870A1 (de) 1998-07-03 2000-01-05 Degussa Mikro- und/oder mesoporöse zeolithische Materialien als Füllkomponenten in Dentalkompositen
US6639015B1 (en) * 1998-09-01 2003-10-28 Catalysts & Chemicals Industries Co., Ltd. Coating liquid for forming a silica-containing film with a low-dielectric constant
DE19853971B4 (de) * 1998-11-23 2011-06-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anorganisch/organische Polysiloxanhybridpolymere und ihre Verwendung
JP3733824B2 (ja) 1999-08-12 2006-01-11 Ｊｓｒ株式会社 シリカ系被膜形成用塗布液の製造方法
JP4524822B2 (ja) 1999-10-29 2010-08-18 株式会社豊田中央研究所 高結晶性シリカメソ多孔体薄膜の製造方法
US6685889B1 (en) * 1999-12-14 2004-02-03 Purdue Research Foundation Photochemical catalysts and methods for their manufacture and use
JP2001203197A (ja) 2000-01-21 2001-07-27 Jsr Corp 膜、および膜の形成方法
WO2001068637A2 (en) * 2000-03-10 2001-09-20 Pharmacia Corporation Method for the preparation of tetrahydrobenzothiepines
US6440309B1 (en) * 2000-05-17 2002-08-27 Yoram Cohen Ceramic-supported polymer (CSP) pervaporation membrane
WO2002061765A1 (en) 2001-01-29 2002-08-08 Jsr Corporation Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof

Also Published As

Publication number Publication date
JP4170734B2 (ja) 2008-10-22
CN1501454A (zh) 2004-06-02
CN100394559C (zh) 2008-06-11
JP2004165402A (ja) 2004-06-10
US20080118737A1 (en) 2008-05-22
US7309722B2 (en) 2007-12-18
US20040105986A1 (en) 2004-06-03

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