TW200405122A - Novel planarization method for multi-layer lithography processing - Google Patents

Abstract

The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

Description

200405122 发明 Description of the invention: The federally sponsored research / development plan is issued today, and is supported by the Wu government under the Advanced Technology Plan # 70NANBIH3019, ^ X _, "Tian Kingdom Standards and Technology Agency (NIST) Institute Granted. The U.S. government has certain rights in the present invention. Related Applications This application μ requests No. 60 / 36〇, 374 of February 27, 2002 ^ _ is a multi-layer lithography process The priority of the application of the novel planarization method is incorporated herein by reference in its entirety. [Technical Field to which the Invention belongs] The present invention points to a new contact planarization method that uses thermoplastics, two Special, curing, and photo-curable planarization materials to make microelectronics, photons, light photons, micro-electromechanical systems (MEMS), biochips and sensor devices, and other processes in which lithographic processes are required. [Previous technology [1]: The market demand for a private child device with the shape of a lucky father small entity has driven the need for building smaller microstructures into a Fei Shishi, + 丄, Pan i main device. In addition, such a device Be It is expected to be more energy-efficient and characterized by more powerful reductions, and at the same time be more cost-effective. In order to achieve these goals, the feature sizes found on integrated circuit (1C) chips must be changed. The ground is smaller. Therefore, it is necessary to pattern the multilayer formation of interconnections with smaller microstructures such as wires, grooves, dressing, P1, $, ,, and pores and holes &lt; smaller microstructures onto the device substrate Then 'use lithography to build these microstructures on the device substrate. This process is normally completed with a single layer and first barrier layer. The emerging lithography technology, such as embossing material male *, ^ i 丨 recognize ~, Nano-imprint lithography, thermal convex lithography, 83889 200405122, and print style transfer have been proposed. These technologies use the pattern forming pattern to transfer the style to the substrate surface, instead of relying on the shadow formation pattern. In order to build more Small microstructures have been used in the lithography process for shorter wavelengths of exposure light (for example from 248 _ to 193 譲 to! "_ To extreme ultraviolet, .spring (EUV) and shorter). As a result, the depth of focus becomes narrower, which results in a smaller lithography process tolerance. Therefore, the topography and thickness of the substrate surface and the pattern formed with tuno (the consistency of the thickness of the coating on the surface become key factors in manufacturing microstructures with the desired feature size. When the wavelength of the exposure light becomes shorter, the substrate The tolerance of the surface geomorphology becomes narrower. In addition, the film to be patterned needs to be thin enough on the surface of the lithography process X substrate surface to be beautiful. When the interconnection layer is built, the surface geomorphology changes. It is even more severe, which makes it beyond the requirements of the lithography process. It is therefore impossible to pattern subtle feature sizes onto the substrate surface. In addition, the second coating tendency caused by surface topography is non-uniform. The thickness of the film is reproduced in a less rigorous way. The thin film in the recessed area together with the surface topography is used to create a 2 Γ film thickness inconsistency in the lithography process. Wanqian exposed the area and caused the problem. Therefore, the A method: now the area outside the J D0F range) produces the problem dimension (CD) control. These factors prevent ~ 冓 ("The key point is when the DOF changes sometimes, = Λ see the desired microstructure feature size. To meet the pattern formation" job. "It has a very limited ability to achieve, because of the topography and light of the substrate surface The thickness of the resistance is 83889 200405122 and the thickness is consistent. Therefore, a multi-layer coating process has been proposed and carried out. First, a thick layer of planarizing material is applied to the surface of the substrate to provide a more planar surface, in which An additional coating layer can be applied on top. The uppermost layer is affected by lithographic pattern formation. Then in an appropriate order such as anisotropic electropolymerization, all layers applied to the substrate will be formed on the uppermost layer. "The surface is transferred down to the substrate. This technique is called-the upper surface is in two order. This upper surface imaging procedure may involve applying two, three, or even layers to the surface before it should be patterned. Geshetu applied more layers to the substrate ^ 1⑷-⑷ illustrates a prior art procedure. As shown in FIG. I⑷, when a layer is constructed on the surface of a device substrate 10, the layer produced by the layer = 12 becomes Unacceptable. In In some cases, a single layer of photoresist is patterned in such a way that a geomorphic surface has been subjected to a two-layer process to improve the lithographic process window. This whispering process involves spin coating and planarization. 14 Another layer area 'such as perforations and grooves 16, followed by-on the thermal reflow process ::: = material can be-anti-reflective coating'-a photoresist, or a similar material. However, spin-coated layers tend to have underlying layers The topography of the surface is popular (see Figure 2: The thermal gravity reflow process allows the coated material to flow into the recessed area (; slightly alleviate the topography of the surface, as shown in the ring: (If necessary, this coating material can be During the reflow process or: Associated Press. / P. Method / Code, %% ,, "4%-for a flatter surface type-photoresist one of the upper layer 18 is applied to the plane layer. As shown in 1⑷. This photoresist layer is formed during the lithography process such as 83889 200405122. The film thickness, thickness-consistency, and surface image are patterned into the upper layer i8, and the substrate surface is affected by the electrical etching process. By etching the unprotected film in the photoresist layer Area to transfer the image to the bottom layer and, if necessary, to the substrate. Because the thickness of the bottom planarizing material 14 is not uniform when coating the surface of the landform substrate, and may be thicker than the upper layer 18, the electrical power of each layer The plasma etch rate is critical. It is best that the upper layer "will have a plasma #etch rate that is much lower than the bottom layer. The upper layer 18 may then act as an etch mask during the pattern transfer process, ie, during the plasma etch process. Therefore, the plasma etching selectivity of the bottom and upper layers is critical for transferring the patterned image from the upper layer to the lower substrate and to the underlying substrate. In order to relax the need for etching selection and prevent the interaction between the bottom and photoresist layers, A very thin hard mask layer is applied between the bottom layer and the photoresist layer. This hard mask layer will have the required plasma etching properties and will work to separate the bottom and photoresist layers. The new procedure has been called a three-tier procedure. The hard mask layer does not improve the surface planarity of the planarization layer because the hard mask is very thin and conforms to the planarized surface. Therefore, it does not improve the tolerance of the lithography process, so a flat bottom layer is still required for the two-layer process. A specific plasma etching sequence is required to transfer the pattern to the hard mask layer, and an additional plasma etching process is used to further transfer the pattern to the bottom planarization layer. In the two- and three-layer private sequences, a planarized bottom layer is required to provide a planar surface on which additional coatings can be applied. The double ripple (DD) process, a technique widely used in advanced 1C processes, enables two metal layers to be deposited in a two metal deposition step. The dielectric layer is etched once or twice (or even multiple times, depending on the scheme of the DD procedure) to construct a two-layer pattern in dielectric 83889 200405122 :. If more than two dielectric layers are involved in the -DD program application, it may be possible to act as a thin hard mask layer :: isolating dielectric layer for an etch stop barrier layer. Once the DD pattern is formed, a metal interconnect material is used: In a DD process method, a layer of dielectric material (or photoresist) is applied to the surface of the substrate 20 (Fig. 2 (paste. Photolithography is used to build the inter-microstructure (perforation / groove 22), It has the required appearance ratio, together with the different characteristic density regions in the layer, as shown in Figure 2 (a). The substrate 20 has a region 24 ′ which has an isolated structure, and a region 26 which has Dense, distributed features. In this way, feature density varies across the wafer and across the substrate surface. When the first planarization layer 28 is applied to the patterned surface t, the landform is as deep as possible because of the feature density It plays a key role in determining the final film thickness ^ as shown in Figure 2 (b). The film thickness at the top of the structure is denser in region 26 than the film in region 24 containing the isolation structure. The thickness is much thinner. As a result, local planarization is achieved in an area with the same feature poverty. However, a recessed area is generated due to the thinner film thickness on the high feature density ~:, worst case Middle, right coated film is not thick enough High appearance in dense feature density regions: Dagger structures (such as perforations and grooves) may be partially filled, while in less dense feature regions may be completely filled by the first planarizing material layer 28. Therefore, global planarization Does not exist in the wafer and across the substrate surface. The second layer 30 is then applied to the planarization layer 28, which lacks global planarity. This second layer can be a photoresist layer (for a two-layer process) For) or a thin hard mask material (for three-layer procedures). As shown in Figure 2 (c), the second layer 30 depends on the contour of the landform with the lower layer 28 and the film layer is in the area Thicker on 26. 83889 -11-200405122 One of the methods to minimize the inconsistency of the thickness of the top sleeve layer film and improve the global planarity is to apply a relatively thick (up to a few microns or even thicker) underlying planarization layer, It will provide—better local and global surface planarity, and additional layers can be applied in agriculture. The thick planarization layer results in a longer electrical decoration time, and requires higher plasma engraving selectivity. .The electrical engraving rate of the electrical layer of the planarization layer needs to be much higher than the top Imaging layer. These properties lead to consideration of the throughput and material compatibility. Other methods are to make the imitation structure into a region with a lower characteristic density to provide the wafer and across the substrate surface. : The feature density is combined to reduce the feature density effect. Therefore, a better global planarity can be realized on the surface of the planarization layer. The design and circuit layout are more complicated by using imitation structure. The side: 立 立Adding the required wafer size is undesired. As a photolithographic camera Cheng Xili ^ Other options, several emerging micro-classes have been accepted and battled in the establishment of microstructures. Also "oral shadows, teach protruding": technology, such as imprint lithography, nano imprint micro print style transfer, etc. Imprint lithography, nano imprint '... ,, embossed lithography uses a die casting to The sample is supreme, and a layer of frosted, castable material on the surface of the fascia board is painted on it. It can be embossed on Zhouyuan's latitude or temperature. When the national railway is in contact, it can be stamped or embossed. # When the dance surface and the mold material are connected to form a neodymium-type mold. Surface fit. And /, the material is hardened. Hold the heart ‘·’, and then transfer the moulded material to the moulded material first or by heat. With the necessary parameters, == <negative samples, and the order of the two cards &amp; to form a ‘style and surface suffices. Lithography technology does not rely on transparency: Γ to transfer the style to the lower layer. These depend on the pattern-carrying mask (or the exposure of the light of a quarter to 83889 -12- 200405122: the pattern is transferred to the photoresist layer. Therefore, dof is not a problem. The flowable casting material for cooking coating requires two & &Gt; + i ,,,, and the degree of cross-substrate Wu "Global planarity. It is inferred that the die casting is strong and the structure is very small. The mold surface needs silk holding =" Perfect surface Parallel. Any landforms and ridges in the layer of die-casting material are catastrophic to the final pattern transferred to the substrate surface

&quot; ^ Possibility. Non-consistent mold material thickness can cause incomplete pattern transfer. %, The thicker film area will be insufficiently scratched, while the thinner area will be over-etched. Therefore, there is a need for a global planar substrate surface &apos; on which the thickness of the flowable mold casting material layer and the full j-plane surface are available for the pattern transfer process. When printing microstructures onto a device surface, a global planar surface is also required. [Summary of the Invention] The present invention is widely related to new contact planarization methods and $ guide structures formed by those methods, which provide photolithography, embossing, nano-imprinting, and ▲

^ Generate global planar surfaces for lithography and print style transfer procedures, thus prohibiting or preventing problems with previous techniques. In more detail, by first applying (such as by spin coating, spray coating, casting, stirring, spray coating, etc.) a planarization layer to a microelectronic substrate having topographic features on its surface, Leading. For most applications, this layer (after curing and contact planarization as discussed below) will generally be from about 0.1-10 m thick, preferably from about 0 m, from about 0. UV m Well, and from about 0.1-0.5 // m would be better. * For MEMS applications, the thickness of the planarization layer will generally be in the range from about 1-1000 // 111, and more preferably from about 1-500 // 111 83889 -13- 200405122. Examples of typical microelectronic substrates include silicon wafers, synthetic semiconductor wafers, silicon-on-insulator (SOI) wafers, glass substrates, quartz substrates, organic polymer substrates, synthetic material substrates, dielectric substrates, metal substrates, and alloy substrates. ， Carbonite substrate, nitrided stone substrate, sapphire substrate, ceramic substrate, and substrate made of fire and fire materials. The planarization layer may be an anti-reflective material or a photoresist material, or it may be composed of a material consisting of a photo-curable or thermo-curable polymer, monomer, oligomer, and mixtures thereof, and a thermoplastic material. Formed from selected constituent materials of the group. The total weight of monomers, polymers, and / or oligomers in the material should be at least about 1%, preferably from about 5 to 100%, and preferably from about 10 to 80%, in a flat plane. The total weight of chemical materials is based on 100%. Examples of suitable monomers, oligomers, and polymers include the following monomers, oligomers, and polymers: epoxides such as tritiated acid epoxides, such as acrylic acid epoxide pressure acrylic salt Acrylic salts, such as vinyl ethers of phenolic epoxide ethylene ether, polyesters, polythioimines, organic and inorganic monomers / oligomers / polymers, and organic and inorganic monomers / oligomers containing ethylene / Polymers, and mixtures of the foregoing. The material preferably further comprises a solvent which is preferably present in a size of from about 0-99% by weight, preferably from about 0-95% by weight, and more preferably from about 5-85% by weight, based on the total weight of the material taken as 100% As the basis. Suitable solvents include diethyl methyl glycol propylene (PGME), diethyl ether ethyl acetate ethylene glycol propylene (PGMEA), ethyl lactate, and mixtures of the foregoing. Solvents that interact with monomers, oligomers, and polymers during the curing or hardening process can also be used. Examples of such a solvent 83889 -14- 200405122 include glyceryl ether, ethyl ether, ethyl allyl, acrylic salt, and acrylic acid. The material preferably further comprises a component selected from the group consisting of an acid, an acid generator (e.g., a thermal acid generator &apos;

Agent's thermal hair growth agent and interfacial speech agent. When an acid or acid generator is present, it is preferably present in a size from about 01 to 10% by weight, and most preferably from 1 to 5% by weight based on the total weight of the material. / q based. Examples of suitable acids or acid generators I include triphenylsulfohexafluorophosphoric acid, triphenylsulfohexafluoroarsenic acid, diphenyliodohexafluorophosphoric acid, diphenyliodohexafluoroantimonic acid, diphenyliodohexafluoro This is selected from the group consisting of fluconic acid, triphenylthiocarbonyl hexafluorophosphate, hydroxythiocarbonyl hexafluorophosphate, tetraammonium inflate, polymeric sulfate, dinonaphalylthiolate and toluenesulfuric acid. It is also possible to replace the acid or acid generator with a base or a base generator. When a light hair or thermal hair agent is present, it is preferably present individually as a weight of from about 0.1-10%, and preferably from about 0.5-5% by weight.

Re-take 100% as the basis. Examples of suitable light or thermal hair-up agents include those selected from the group consisting of copper hydroxy, hydroxide, organic peroxides, nitrogen-containing compounds, and amine salts of Uiflic acid. . Regardless of the components included in the planarization material, during the pressing, the planarization material should have a viscosity of from about 1G_5M⑻ep, and preferably from about 10 5,000 CP such as at, the material can be filled in from about 0. ㈤ and larger sizes, and preferably a gap in the range of about (M · 5 (), _heart. After applying the planarizing material, it can be heated to about 5 0 _ 2 5 0 if necessary C for about 5 _ 600 seconds to listen to the private spear 丨 remove the remaining agent from ,,, or the remaining solvent can be subject to the coating object-Zhi Liu tool work for about 5 to 600 seconds Add 83889 -15- 200405122 to remove. Then the material is in contact with a flat object for enough time and pressure to transfer the flat surface of the object to the planarization layer and allow the coated material to flow into the recessed area. Flat object It may be composed of quartz, silicon, glass, metal, alloy, ceramic, polymer, etc. The contacting or pressing step will generally include an applied pressure from about 1-1, 000, 1 ^, and preferably from about 5-25, 0 ^, and From about 10 ·〗: psi is better, from about 1 second to about 12 minutes , Preferably from about 3 seconds to about 10 minutes, and more preferably from about 10 seconds to about 5 minutes. This procedure can be performed in a chamber that is evacuated to at least the surrounding air pressure, but the surrounding conditions, increased pressure, And an artificial air pressure is also appropriate. It should be understood that a light flat or some equivalent device can be used to apply this air pressure, and a device that applies the selected pressure must be selected to adapt to a specific process (for example, a UV curing light is used if a UV curing process is to be used). Flatness is necessary). It can be processed under atmospheric pressure, an inert pressure (containing gases such as nitrogen, argon, etc.), or a specific pressure (including organic solvent vapors, silicon-containing vapors, water vapor, oxygen, etc.) Procedure. 4 The contacting step is generally performed at a temperature from about ambient temperature to about 350t. For photocurable flat materials, the pressing temperature should be controlled in a range from about ambient temperature to about 250 ° c, preferably about Ambient temperature to about 10 (in the range of rc ') and better in the range of about ambient temperature to about 50 ° C. For heat-curable planar materials,' pressing temperature should be controlled at about In the range of ambient temperature to about 350 ° C, it is more preferably from about 50-25 ° C, and from about 50-20 ° C. For thermoplastic planar materials, the pressing temperature should be controlled at From about ambient temperature to about 50 ° C above the melting point of the material, it is preferably from about 2 83889 -16-200405122 below the glass transition temperature (Tg) to about 10 ° C above the melting point of the material. After the contacting step, the substrate is cooled to about 0 ° or less, and preferably about 20t below Tg: or about 50 ° C or at least about 20 ° C (depending on which one is lower). If the composition is thermoplastic, and allowed to harden or solidify by cooling, as discussed above. While the optical planar object maintains contact with the substrate (and / or after contact), the planarization material is hardened or cured in a conventional manner. For example, if the composition is photocurable, it is exposed to UV light (at a wavelength suitable for that particular composition) to cure the layer. Similarly, if the composition is heat-curable, it is cured by heating (eg, through-hot plate, through-oven, IR heating, radiation heating, etc.) and then cooled to less than Tg, and it is best Cool to about 50 ° C or at least about 20 ° C below its Tg (whichever is lower). If the composition is thermoplastic, it is allowed to harden or solidify by cooling, as discussed above. -What is the material used? Once the flat material has been hardened or cured, the substrate is separated from the flat object. In this way, the planarity of the flat object surface is transferred to the substrate surface to provide global planarity. A second coating layer, such as an imaging layer, having a uniform film thickness and global planarity can then be applied to the planarized surface. Suitable imaging layers include photoresist layers, pressed layers, and print styles. Furthermore, one or more optional intermediate layers (such as photomask layers, barrier layers, anti-reflection layers) can be applied before applying the imaging layer. In one embodiment, the intermediate layer is substantially metal-free (i.e., contains less than about a weight metal, and preferably about 0% by weight metal). Then create a pattern in the imaging layer according to a known procedure, and transfer it to 83889 -17- 200405122 to the lower layer. For example, if the imaging layer is-the photoresist 1 layer is selectively exposed to UV light, and is generated by a conventional photoresist generator to form a pattern. You will realize that this generation step will also be selectively removed (depending on the style ^ any intermediate layer 'and the planarization layer under the substrate, while leaving at least a part of the original substrate landform intact. If the imaging layer is a Embossing layer, a negative image with the desired style, embossing the embossing layer to form the desired style in it. Then embossing the style through the embossing layer, the middle layer, and the planarization layer to transfer the shape ^. Similar Ground, if the style is a _print style, the ㈣ style is engraved to transfer the style through the planarization layer. ^ Repeat the above steps to form a second "stack" on the guide, or make the leader further [Embodiment] Referring to FIG. 3 (a), a substrate 32 is shown. The substrate 32 includes a surface having structures or features 34 thereon. These structures or features 34 will have varying landforms and feature sizes. It depends on the final intended use. When used here, “landscape” means the height or depth of a structure, and “feature size” means the width and length of a structure. If the width and length are not @, then pass Collectively, the smaller number is referred to as the feature size. A conventional material (see Fig. 3 (b)) is used to apply a planarizing material% to the substrate 32. In the previously described procedure, a material such as The flat surface of one of them is in contact with the material 36. After the flat surface is cured / hardened and separated from the material 36, the result is produced on the material%. The global plane surface 38 is such that the king plane surface 38 is ready for subsequent layers. For example, the photoresist layer 40 can be applied in a consistent manner (Fig. 3⑷). 83889 -18- 200405122 Referring to Fig. 4 (a), a display substrate 42 is shown. The substrate 42 includes a structure or feature formed therein. 44. The substrate 42 has a region 46 with an isolated structure, and a region 48 with dense features. This has avoided the problems of previous techniques as previously discussed. Use a conventional procedure to planarize a The material 50 is applied to the substrate 42 (see FIG. 4 (b)). A flat surface such as a light flat surface (not shown) is brought into contact with the material 50 under the previously described process conditions to cure / harden the flat surface Separation from the material 50 (see FIG. 4 (c), the result is a global planar surface 52 on the material 50. Thus, as shown in FIG. 4 (a), the global planar surface 52 is ready to be used for subsequent layers , Such as photoresist layer 54, which can be applied in a consistent manner. When used herein, a global planar surface is intended to refer to a layer with a thickness "D" (see Fig. 4) that varies by less than about 1 ()%, and It is preferably less than about 5% at a distance of about ^ Gang. The method of the present invention results in such a global flatness (also known as film thickness variation). Furthermore, the 'forgotten or The hardened planarization layer will have a landform of less than about 250 A, and preferably less than about 150 A, in any individual topographic feature or structure. In the end, the solidified or hardened planarization layer will have a landform of less than about 600, which is less than about 500 A, and preferably at a distance of about 1, and a lamp at a distance of about m (the surface of the substrate Length) is less than about 400 A, where there are at least two different characteristic density regions at this distance. Example method. However, it should be understood that ′ and its content should not be recognized. The following examples suggest the best according to the present invention. These examples are provided by way of illustration.

83889 -19-

UJ1ZZ is intended to limit the overall scope of the present invention on a perforated wafer. # Α 丁 was deficient in solidified planar materials. Finished in the Page Lab. , D0W Chemical c, PGME (Aldrich) and 1.2 2 "sarcat KI_85 (one can be produced by Sartomer") to prepare light-curing materials. Then-M, ', · β m filter to Filter the material and store it in a clean brown bottle. A perforated H circle is used as the substrate. The Shi Xi wafer is first coated with a thickness of about 1 # m-Huang Fu Yu Luo Yan, Yu On the other hand, it emulsifies the silicon dioxide film. One has different characteristics, degrees, and has a straight furnace. The pattern of the perforated area is formed in a siliconized silicon film. The depth of the perforation is about 1 # m. A thin film of a photo-curable planar material having a thickness of about one is spin-coated onto a perforated wafer having regions with different pattern characteristic densities. The wafer is transferred: a pressing tool chamber and placed on a substrate table The top surface of the flat material 7 is positioned to face a light The surface is transparent and flat. Press the tool cavity to the quilt material, and the cavity is cleared to less than M Taoer. The cavity to pressure is maintained at less than 2G Taoerda for about 30 seconds to remove the remaining solvent. Substrate ® is lifted to allow the substrate surface to contact the flat surface with a force of about 68 psi for 3 G seconds. While the substrate surface is maintained in contact with the flat surface at a pressure of 68 Torr, a pulse of ultraviolet (uv) light passes through the light The flat surface is irradiated with solid surface material. The pulse of UV light is turned on and off in seconds, and the total exposure time is 3 seconds. After exposure, the pressing tool chamber is discharged from less than 20 Tao ( Carry out the entire pressing procedure of the chamber pressure) to atmospheric pressure. Reduce the 83889 -20-200405122 substrate stage 'and open the chamber mule. The substrate is separated from the smooth flat surface and removed from the chamber for characterization. Use except The same processing conditions other than the step are used to coat other perforated wafers with the same material. This additional wafer is also prepared and characterized and used as a reference wafer. A Tencor Alphastep profile former Characterize the planarized perforated wafer surface. Obtain a landform less than 200 A on the planarized structure and across adjacent feature density regions. Use a focused ion beam (FIB) microscope to measure in different feature density regions The thickness of the planar film on the top of the structure. Measure two characteristic density regions. Measure the thickness of the film on the top of the structure in an area with a perforation of about 0.3 / m in diameter and a landform of about 0.5 am, and a thickness of about 0. .3 / zm diameter perforation and film thickness in an area of about 175 // 111 landform. The thicknesses of the films on the tops of the high structures (not on the tops of the perforations) measured in the two regions were about 0.38 # ㈤ to 孓 0.39 // m, respectively. The thickness of the reference wafer film is measured over an area having the same characteristic density as that in the pressed wafer. The reference wafer film thickness is approximately 0.25 # m and 0.44 / z m, respectively. Example 2 A photo-curable planarizing material on a one-wafer wafer was completely mixed with 20 g of epoxide (der. 354LV, Dow Chemical Co.), 80 g of PGME ( Aldrich) and i 2 g 芡 Sarcat KI-85 (Sartomer) to prepare a photocurable material. The material was then filtered through a 0.2 / zm filter and stored in a clean brown bottle. 83889 -21-200405122 A silicon wafer with a trench structure with a depth of about 1 v m is used as the substrate. The characteristic density of this wafer ranges from 4% to 96%. Two thin films of photo-curable planarization material less than 0.5 m / m thick are spin-coated: on a shixi groove wafer 'which includes a region of characteristic density. The wafer is transferred to the press tool chamber and placed on a substrate table. Point the coated substrate: Point to face the surface of an optically transparent light flat object. The lid of the chamber was sealed by a mountain and the main clearance of L was less than 20 Tao. The cavity pressure was maintained at less than 200 tal L, .々3 0 # &gt; to remove residual solvent. The substrate table is raised with a force of approximately PS1 &lt; to allow the substrate surface to contact the optically flat surface for 300 seconds. While the substrate surface was in contact with the optically flat surface at a pressure of 68 psi, a UV ray was irradiated through the optically flat surface for 10 seconds to cure the planarization material. After exposure, the substrate stage is lowered. The pressing tool chamber is vented to atmospheric pressure from less than 20 Tao (the pressure of the chamber during which the entire pressing process is performed). The chamber lid is opened and the wafer is detached from the optically flat surface and removed from the chamber for characterization. ~ Coat other grooved wafers with the same material using the same processing conditions except the pressing step. This wafer was prepared as a reference. A Tencor Alphastep profiler was used to characterize the planarized grooved wafer surface. A surface topography of about 250 A was measured across the structure, and topographic changes of no more than about 50 A were measured across adjacent feature density regions. The reference wafer showed a measured surface topography of approximately 7000 A across the topography. A scanning electron microscope (SEM) was used to measure the thickness of the planarized film in different feature density regions of the planarized wafer. The film thickness is measured over the characteristic density region, which represents the largest difference of about 40% in the characteristic density. The thickness of the thin film on the top of the structure other than the groove is about 83889-22-200405122 0.45 # m in the two characteristic density region, and has a thickness difference of about 〇12 # m (12〇A). Example 3 A thermally curable planarizing material on a perforated wafer was mixed with 20 g of epoxide (DER 354LV The D0wc — dc〇 ·) '/ g of PGME (Aldrich) and 10 g of NAc_ Super xc_, catalytic rhenium (a kind of thermal acid generator, available from King Industries) to make:-heat-curable materials, fully prepared and mixed. Filter the material with a 102 ”filter and store it in a clean brown bottle. A silicon wafer containing a perforation is used as the substrate. The silicon wafer is first coated with—with a thickness of about Mm of dioxide. Shi Xi film. A pattern including a perforation of 0.2 to a diameter and a region with different characteristic density is formed on the silicon dioxide film. The depth of the perforation is about one of a heat-curable planarization material with a thickness of about 0.2 / zm. The film is spin-coated onto silicon-perforated wafers with areas with different characteristic densities. The wafer is transferred to a pressing tool chamber and placed on a substrate table. The surface of the substrate being coated and planarized is Positioned to face a flat surface of an optically transparent light. Keep the chamber pressure at less than 20 Taoerda for 60 seconds to remove the remaining solvent. Raise the substrate table to allow the substrate surface with a force of about Μρ. I is in contact with the light flat surface for 60 seconds. While the substrate surface is maintained in contact with the light flat surface at a pressure of 68 psi, a pulse of UV / IR heating light is irradiated through the light flat surface to at least about 13 t: The flattening material is cured at a temperature of 210 seconds. After the curing process, the pressing tool chamber is vented from less than 20 Taoer to atmospheric pressure. The substrate table is lowered and the chamber lid is opened. The substrate is separated from the smooth flat surface and Removed from the chamber for characterization. 83889 -23- 200405122 A Tencor Alphastep profiler was used to characterize the planarized perforated wafer surface. The volume was less than 100A and less than 100A across adjacent feature density regions. Surface topography on a planar structure of about 300 A. Use a sem to measure the thickness of the planarized film on the structure in different feature density regions. Measure two feature density regions. Measure a perforation with a core diameter of about 0.3 and The thickness of the film on the top of the structure in a region with a depth of about 0.5 / zm. Also in a region with a perforation of about 0.3 / zm and about 1 7 S ..., oops, 1, Vm / woodiness &lt; The thickness of the film is measured on the top of the structure. The measured thicknesses of the film are about 〇i ”m and 〇21 / zm 〇L Schematic illustration] Figure l (aHc) illustrates the steps of a prior art planarization process. 2 (aH c) illustrates that the step boards of other prior art planarization procedures have two different feature density regions; Figures 3 (a)-(d) illustrate the steps of contacting the planarization procedure according to the inventor; and π Figure 4 (a) _ (d) Explain that according to the method of the invention, the force contacting the step of the planarization procedure, the substrate has two different characteristic density regions. [Illustration of Symbols in the Drawings] 1 〇 Substrate 12 Landform 14 Planarization material 1 6 Perforation and groove 20 Substrate 22 Perforation / groove

83889 -24- 200405122 24,26 area 2 8 planarization layer 3 0 second layer 32 substrate 34 structure or feature 3 6 planarization material 38 global planar surface 40 photoresist layer _ 42 substrate 46 area 44 structure or feature 48 area 50 planarization material 52 global planar surface 54 photoresist layer -25-83889

Claims (1)

200405122 The scope of patent application: 1 · A daughter and a soil to form a microelectronic leader. The 'Wan Qu' baby method includes the following steps: (a) Provide a substrate, JL and the ancient master & ^ 〃 has a surface and Including a number of topographical features on the surface; (b) forming a planarization layer on the surface; (c) contacting the planarization layer with the planar surface of the object for a sufficient time [force and / degree, to The flatness of the surface is transferred to the planarization layer; (i) selectively forming one or more intermediate layers on the planarization layer; and (ii) forming an imaging layer to obtain a microelectronic leader, if present, an imaging layer is formed on the On the intermediate layer, or if there is no intermediate layer; on the planarization layer. (f) Establish a pattern on the imaging layer. (g) Transfer the pattern to the intermediate layer if it exists first, and to the planarization layer, where after the transfer step 1 ′ + 1 +, this At least a part of the landform remains on the substrate surface. ', &Quot; 2. For example, the aspect 40 of the scope of the patent application includes a compound consisting of a polymer, a monomer, an oligomer, or a mixture thereof, and a group consisting of the same. . '3. As in the method of Cap 2 of the patent, the planarization layer further includes an acid, an acid generator, a base, and an inspection ^ ^ ^ ^ organism, surfactant, light hair agent, It is a hair conditioner and a mixture thereof. The constituents selected by the group 4. If the method of the scope of patent application is the second item, the β-a compound is composed of epoxy 83889 200405122 compound, acrylic salt, ethyl ether, polyacetate, Organic and inorganic monomers, oligomers, and polymers, and organic and inorganic monomers, oligomers and polymers containing ethylene, and selected water in the group consisting of the foregoing mixtures The method of item 1 further includes a step of substantially curing or hardening the planarizing layer during or after the contacting step. 6. The method of claim 5, wherein the solid: or hard: step includes subjecting the planarizing layer to UV light for a sufficient time to substantially cure the composition. 7. The method of claim 5, wherein the curing or hardening step includes heating the planarization layer for a sufficient time and temperature to substantially harden = the planarization layer. 8. The method according to item 7 of the patent application, wherein the curing or hardening step includes cooling the planarization layer to a temperature below about 3,000 square meters. 9. The method of claim 7, wherein the heating comprises heating the planarization layer using a 辏 -radiation heat source. ~ 10. The method according to item 7 of the scope of patent application, wherein the heating includes using flood heat to heat the planarization layer. 11 · The method according to the scope of the patent application, wherein step (c) is performed under ambient pressure. 12. The method according to the scope of the patent application, wherein step (c) is performed under vacuum. 1 3 · The method according to the scope of patent application, wherein step (c) is performed under increased pressure. 14. The method of claim 1, wherein step (c) is performed at an artificial temperature of 83889 200405122. I5. If the method in the scope of the patent application is applied, the first step is-from step to-from step to step, and the pressure of the contact cattle is about 1 to 1,000 psi. y 16. If the method of the scope of the patent application is applied, perform the contact step at a temperature of about ambient temperature to about 35 ° C (17.) If the method of the scope of the patent application is applied, the contact should be changed from about 1 Time from seconds to about 120 minutes. 1 8 · The method of item No.} in Shen Jing's patent scope, which includes: layers, and each intermediate layer is essentially metal-free. The method of item 1, wherein: the imaging layer includes a photoresist layer; a portion of the photoresist layer is exposed to UV; the establishing step includes selectively irradiating the light; and the transfer step includes forming the photoresist layer. If present, the intermediate layer; and the planarization layer. 4 20. The method according to item 1 of the scope of patent application, wherein: the imaging layer includes an ink layer; the step of establishing includes contacting the imprint layer with a negative Image, the negative image has / embossed surface of the negative image of the pattern; and the transferring step includes etching the pattern through the intermediate layer, if present, and the planarization layer. 2 1. Method as claimed in item 1 of the scope of patent application Where: The imaging Including a printed pattern; and the transferring step including etching the 83889 200405122 formula and the planarization layer through the intermediate layer, if present. 22. The method according to item 1 of the patent application scope, further comprising the microelectronics The preamble repeats at least some of the steps (a)-(g). 23. As in the method of claim 1 of the patent scope, there is at least one intermediate layer selected from the group consisting of a photomask layer, a barrier layer, And an anti-reflection layer. 24. The method of claim 1 in which the result of step (c) results in a planarization layer having less than about 10% at a distance of about 10,000 // 111 The thickness variation of the film. 25. The method according to item i of the patent application, wherein step (c) results in a planarization layer, which has a landform feature of less than 250 people on any individual substrate landform feature. 26. If applied The method of the patent scope, wherein step (c) results in a planarization layer, which has a landform of less than about 600A over a substrate surface length of about 10,000 / zm, and has at least two different features there. The degree region exists on the length of the surface of the substrate. 2 7 ·-a combination: a plate having a surface and a plurality of landform features on the surface; &amp; a global planar, solid surface on the surface A planarized or hardened planarization layer; one or more intermediate layers selectively on the planarization layer; and an imaging layer on the intermediate layer, if present, or on the surface if no interlayer method is present 83889 -4- 200405122 It is considered as the combination of patent application No. 27, where the substrate is cut from wafer, compound semiconductor wafer, insulator wafer, glass substrate, quartz substrate, organic polymer Select from the group consisting of substrate, synthetic material substrate, dielectric substrate, metal substrate, alloy substrate, silicon carbide substrate, silicon nitride substrate, sapphire substrate, ceramic substrate, and substrate made of refractory material. 29. The combination of claim 27, wherein the planarization layer is formed of a composition selected from the group consisting of a polymer, a monomer, an oligomer, and a mixture thereof . 30. According to the combination of item 29 in the scope of patent application, the composition further comprises an acid, an acid generator, a test, a test product, a surfactant, a light hair-generating agent, a thermal hair-generating agent, and a mixture thereof. The selected component in the group is 0 31 ·, the combination of the scope of application for item 29, wherein the compound is selected from the group consisting of H. oxide, acrylic salt, ethylene test, polyacetate, polythioimine, "Organic sum", organic monomers, oligomers, and polymers, and organic sums containing ethylene ", organic monomers, oligomers and polymers, and mixtures of the foregoing. 32_ The combination of item 27 of the patent application scope, wherein there is at least one intermediate layer, and the edge intermediate layer is selected from the group consisting of a photomask layer, a barrier layer, and an anti-reflection layer. 33. The combination of the 27th item in the patent application range, wherein the planarization layer has a thickness of from about 0 · M0 // m. 34. The cascade of item 27 in the scope of patent application, wherein the combination is a micro-motor system structure, and the planarization layer has a thickness of about 300 Å. 83889 200405122 3 5 As in the combination of claim 27 of the patent scope, there is at least one intermediate layer, the intermediate layer is selected from the group consisting of a mask layer, a barrier layer, and an anti-reflection layer. 36. The combination of claim 27 in the scope of patent application, wherein the imaging layer is selected from the group consisting of a photoresist layer, an imprint layer, and a print layer. 37. According to the combination of claim 27 in the scope of the patent application, the planarization layer has a film thickness variation of less than about 10% at a distance of about ⑼ V m. 38. The combination of item 27 in the scope of the patent application, wherein the planarization layer has a landform of less than about 250 people on any individual substrate landform feature. 39. The combination of item 27 in the scope of the patent application, wherein the planarization layer has a landform of less than about 60 () people on a substrate surface length of about 10,00 ## 1, where There are at least two different characteristic density regions on the surface length of the substrate. The method includes the following steps and includes on the surface a method of forming a microelectronic precursor. (A) A substrate is provided, which has A table of several topographic features; (b) forming a planarizing layer on the surface; (c) contacting the planarizing layer with a surface of the <br> <> Tantan for sufficient time, pressure, and temperature to Twisting—the surface is transferred flat to the planarization layer; (d) one or more intermediate layers are selectively formed on the planarization layer, and the intermediate layer is essentially metal-free; and the electron precursor, if intermediate On the interlayer, or if (e) without an intermediate layer forms an imaging layer to obtain micro-presence, the imaging layer is formed on the intermediate layer and on the planarization layer. 83889 '6- 200405122 41 · A method for forming a microelectronic precursor, the method includes the following steps: (a) a substrate having a surface and including a plurality of landform features on the surface; (b) in A planarizing layer is formed on the surface; (c) The planarizing layer is brought into contact with the planar surface of a flat object for a sufficient time, pressure, and temperature 'to transfer the flatness of the planar surface to the planarizing layer; (d) selecting Forming one or more intermediate layers on the planarizing layer; and (e) forming an imaging layer to obtain a microelectronic precursor, and if the intermediate layer exists, the imaging layer is formed on the intermediate layer, Or formed on the planarization layer if no intermediate layer is present. 42 · —a combination: a microelectronic substrate having a surface and a plurality of the geomorphological features on the surface; Selectivity on the planarization layer—or multiple intermediate layers, which are essentially metal-free; and—if present—on the intermediate layer—the imaging layer, if no intermediate layer exists on the planarization layer One imaging layer. 83889