200819911 九、發圃說明 【發明所屬之技術領域】 本發明是有關於一種奈米轉印芻 · · 衣 ％ (Nano-imprinting200819911 IX. Description of the invention [Technical field to which the invention pertains] The present invention relates to a nano-transprinting device (Nano-imprinting)
Process)，且特別是有關於一種自我轉印_Μηι—㈣ Process)製程。 【先前技術】Process), and especially for a self-transfer _Μηι-(4) Process) process. [Prior Art]
請參照第1A圖至第10圖，其係％示傳統奈米轉印製程 之製程剖面圖。首先，提供基板刚，並在基板⑽之表面 102上塗佈一層轉印材料層1〇4’而形成如第1A圖所示之結 構。接著’對轉印材制104進行熱處理，而將製程溫度‘ 咼至150°C以上，如第1B圖所示。 接下來，提供模仁106,其中此模仁1〇6之一表面設有立 體之圖案結構108。再於模仁1G6之設有圖案結構1()8之表面 上塗佈脫模層114。接著，將模仁106置於轉印材料層ι〇4之 上方，並使模仁106之圖案結構108與基板1〇〇上之轉印材 料層104相對，如第1 c圖所示。 接下來，將模仁106朝轉印材料層1〇4的方向下壓，而 使模仁106之圖案結構1〇8嵌設在轉印材料層1〇4中，如第 〇圖所示。而後，降低製程溫度，使製程溫度將至室溫。然 後，即可進行脫模動作，而使模仁1〇6脫離轉印材料層Μ#， 並在轉印材料層104中產生圖案結構11〇，如第1E圖所示。 由於模仁106表面之圖案結構1〇8先前嵌設於轉印材料層 中，因此模仁106脫離轉印材料層1〇4後，轉印材料層 5 200819911 之圖案結構11 0與模仁1 06表面之圖案結構丨08互補。 接著，從轉印材料層104具有圖案結構110之表面進行 蝕刻，以將轉印材料層104之圖案結構110轉移至基板1〇〇 之表面102中，而在基板100之表面102中形成圖案結構112, 如第1F圖所示。再移除蝕刻後剩餘之轉印材料層〗丨〇，而完 成模仁1 06之圖案的轉印，如第1 〇圖所示。 目前，奈米結構之轉印技術一般係採用熱壓印方式（如上 • 述實施例所述）或紫外光照光定型方式。熱壓印方式的缺點是 必須搭配高壓進行壓印，因此極易受溫度與壓力的影響，而 造成壓印品質不佳，嚴重影響製程良率。另一方面，紫外光 照光方式雖可避免溫度與壓力的效應，而使壓印品質較熱壓 印方式佳，然而此種方式之壓印品質仍會受到壓模圖形疏密 分佈與複雜度的影響。此外，紫外光照光方式的另一個缺點 為模仁之製作只能侷限於透光材料，因為光線無法穿過不透 光模仁而無法固定圖形，因此模仁在製作上有材料的限制， 瞧而嚴重影響模仁製作之自由度。再者，目前之紫外光壓印機 台不僅價袼昂貴，且穩定度仍需再觀察。 • 【發明内容】 ^ 因此，本發明之目的就是在提供一種奈米轉印製程，其 係先將轉印材料塗佈在模仁之圖案結構上，再將轉印材料壓 貼至基板之表面上，然後將模仁從轉印材料上移除。因此， 可兀全複製模仁表面上之圖形，而可提高圖形轉印的可靠 度，不僅可(提高轉印製程良率，更可獲得高品質之轉印圖形。 6 200819911 本發明之另一目的是在提供一種奈米轉印製程，可大幅 降低微粒、晶圓麵曲（Wafer Wrap)以及圖案分布不均的影響， 進而可提升圖案轉印之品質。 本發明之又一目的是在提供一種奈米轉印製程，無須使 用昂貴之壓印機台，因此可大大地降低製程成本。 根據本發明之上述目的，提出一種奈米轉印製程，至少 包括：提供一模仁，其中模仁具有栢對之第一表面以及第二 表面，且模仁之第一表面設有第一圖案結構；對模仁之第一 表面進行一表面處理，以在模仁之 _ 表面上形成一抗沾黏 表面，形成一轉印材料層覆蓋在模 一圖宏社Μ *丄 弟表面上並填滿第 固案、、、。構’其中轉印材料層具有相對一 表面，且第_圖率钍 表面以及弟一 轉印材料層之第二表面實質平坦；提供==面中，而 表面墨合在轉印材料層之第二表面上·、广板，並基板之-將模仁與轉印材料 ，運仃一脫模步驟，以 成第二圖案結構心開二：：印材料層之第-表面中形 圖案結構之圖案轉移至基板：=中：轉印材料層之第二 材料層。 以及移除剩餘之轉印 依照本發明—較佳實施例 至少包括塗佈一轉印材料一述形成轉印材料層之步驟 材料進行烘烤步驟。 、—之弟—表面上、以及對轉印 實施方式 本發明 露一種奈米轉 得平製程，可6入、 疋王複製模仁之圖 7 200819911 案’可有效降低微粒、晶圓翹曲以及圖案分布不均的影塑， 進而可獲得高品質之轉印圖案質。為了使本發明之敘述i加 坪盡與完備’可參照下列描述並配合第2A圖至第2】圖之圖 式。 請參照第2A圖至第2J圖，其係繪示依照本發明一較佳 實施例的-種奈米轉印製程之製程剖面圖。進行奈米轉印： 程時，首先提供模仁200,其中模仁2〇〇具有相對之表面加 與204，且模仁200之表面2〇2設有欲壓印之立 圖所示。在本發明中，模仁挪之材質^^ 可透光材料’亦可採料透光材料。此外，圖案結# 206之 圖案可為奈米圖案或微米圖案。 接下來，對模仁200具有圖案結構2〇6之表面2〇2進行 表面處理’以在模仁2〇〇之表面2〇2上形成抗沾黏表面。在 ^較佳實施例中，係在模仁之表面逝上塗佈—層脫模 層期，藉以將模仁2〇〇之表自2〇2予以改質，而在模仁2〇〇 之，面202上形成抗沾黏表面21〇，亦即脫模層2⑽之表面， 弟2B圖所示。在本發明令，脫模層·之抗沾黏表面 對水之”圭係介於實質5度至實質.1〇〇度之間。 待70成杈仁202具有圖案結構206之表面202的抗沾逢占 二理後’先塗佈轉印材料212於模仁⑽之表面2(>2，並填二 :案結構206,如第2C圖所示。轉印材料212可例如為聚甲 二：稀馱甲酯(P〇lymethylmethacryH⑽叫或光敏材料， :六光：。在塗佈轉印材料MS時’可依材料需求，選擇性 小加洛劑於轉印材料212中，以降低轉印材料Μ:之點滯 200819911 係數，進而可輕易地使轉印材料212 上的圖案結構206。 00之表面202 以JL，利用例如烘烤方式對轉印材料212進行熱處理， 夕示轉P材料212中之溶劑，而使轉印材料212轉 印材料層214位於模仁20〇之表面202上，如第2d 在本發明之一奋# 由 圖所示。 212之烘烤步驟較佳係將 皿度控制在介於實質30t至實質50(rc之間，且 間較佳係控制在介於實質5秒至實質2小時之間。轉^ 層214之厚度較佳係控制在介於實f 2罐至^ 面〇 2〇2上的圖案結構2°6嵌合在轉印材料層： 表面216中。此外，轉印材料層214中相對於表面2ι -面21 8較佳呈實質平坦，以利後續貼合製程的進行。 在本發明之另一實施例中，當轉印材料η :敏=時，可在熱處理程序後再選擇性地對轉印= 驟中驟。其中，對轉印㈣212所進行之曝光步 /日⑽較佳可控制在介於實f 5秒至實質Μ分鐘之 二可從上’ t模仁2°°係由可透光材料所組成時，曝光之光 射鳇/表面2〇2朝模仁200之表面204的方向照 射轉印材料212，亦可從槿9ηπ +主 #、 面202的方^ 6 Κ一 200之表面204朝模仁2〇〇之表 =方向&射轉印材料212’而完成轉印材料層214之製 之光=方面’當模仁係由不透光材料所 模！2°°之表面202朝模仁2。〇之表面-的 D 一 Ρ材料212 ’以完成轉印材料層214之製作。 待完成轉印材料層214之製作後，提供基板220,並使基 9 200819911 板220之表面222與 對。然後，將基板220壓合在二：實質平坦表面218相 板220之表自如貼 ^轉印材料層214之上，以使基 2E圖與第丌圖所- 印材料層214之表面218,如第 之夺面218 Μ ^ ^。經過此—壓合處理後，轉印材料層214 18的材料會與基板220之表面222結合。 =’即可進行脫模步驟，以使模仁扇 =。於脫模過程中’由於模仁2〇。之表面2。2先前已經表Please refer to FIGS. 1A to 10, which are schematic cross-sectional views showing a process of a conventional nano-transfer process. First, a substrate is provided, and a layer of transfer material 1〇4' is applied onto the surface 102 of the substrate (10) to form a structure as shown in Fig. 1A. Next, the transfer material 104 is subjected to heat treatment, and the process temperature is set to "150 ° C or higher, as shown in Fig. 1B. Next, a mold core 106 is provided, wherein one of the surfaces of the mold core 1 is provided with a pattern structure 108 of the vertical body. Further, the release layer 114 is applied to the surface of the mold 1G6 on which the pattern structure 1 () 8 is provided. Next, the mold core 106 is placed over the transfer material layer ι4, and the pattern structure 108 of the mold core 106 is opposed to the transfer material layer 104 on the substrate 1 as shown in Fig. 1c. Next, the mold core 106 is pressed in the direction of the transfer material layer 1〇4, and the pattern structure 1〇8 of the mold core 106 is embedded in the transfer material layer 1〇4 as shown in the first drawing. Then, reduce the process temperature so that the process temperature will reach room temperature. Then, the mold release operation is performed, and the mold core 1〇6 is separated from the transfer material layer Μ#, and the pattern structure 11〇 is produced in the transfer material layer 104 as shown in Fig. 1E. Since the pattern structure 1〇8 of the surface of the mold core 106 is previously embedded in the transfer material layer, the pattern structure of the transfer material layer 5 200819911 and the mold core 1 after the mold core 106 is separated from the transfer material layer 1〇4 06 The surface pattern structure 丨08 complements. Next, etching is performed from the surface of the transfer material layer 104 having the pattern structure 110 to transfer the pattern structure 110 of the transfer material layer 104 into the surface 102 of the substrate 1 to form a pattern structure in the surface 102 of the substrate 100. 112, as shown in Figure 1F. Then, the transfer material layer remaining after the etching is removed, and the transfer of the pattern of the mold core 106 is completed, as shown in Fig. 1. At present, the transfer technique of the nanostructure is generally carried out by a hot stamping method (as described in the above embodiments) or an ultraviolet light illuminating method. The disadvantage of the hot embossing method is that it must be embossed with high pressure, so it is highly susceptible to temperature and pressure, resulting in poor embossing quality, which seriously affects the process yield. On the other hand, although the ultraviolet light illumination method can avoid the effects of temperature and pressure, the imprint quality is better than the hot imprint method. However, the imprint quality of this method is still subject to the dense distribution and complexity of the stamper pattern. influences. In addition, another disadvantage of the ultraviolet light mode is that the production of the mold core can only be limited to the light-transmitting material, because the light cannot pass through the opaque mold and cannot fix the pattern, so the mold has a material limitation in the production, and Seriously affect the freedom of mold making. Moreover, the current UV embossing machine is not only expensive, but the stability still needs to be observed. • SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a nano-transfer process in which a transfer material is first applied to a pattern structure of a mold core, and then the transfer material is pressed onto the surface of the substrate. Then, the mold core is removed from the transfer material. Therefore, the pattern on the surface of the mold core can be completely reproduced, and the reliability of the pattern transfer can be improved, and not only the transfer process yield can be improved, but also a high-quality transfer pattern can be obtained. 6 200819911 Another embodiment of the present invention The object of the present invention is to provide a nano transfer process which can greatly reduce the influence of particles, Wafer Wrap and pattern unevenness, thereby improving the quality of pattern transfer. A nano-transfer process, which does not require the use of an expensive imprinting machine, thereby greatly reducing the process cost. According to the above object of the present invention, a nano-transfer process is proposed, which at least includes: providing a mold core, wherein the mold core Having a first surface and a second surface of the cypress, and the first surface of the mold is provided with a first pattern structure; a surface treatment is performed on the first surface of the mold core to form an anti-adhesive surface on the surface of the mold core, Forming a layer of transfer material overlying the surface of the mold and the surface of the mold, and filling the first solid case, the structure of the transfer material has a surface, and the _ map The second surface of the surface and the layer of the transfer material is substantially flat; the surface is provided in the == surface, and the surface is inked on the second surface of the transfer material layer, the flat plate, and the substrate - the mold and the transfer The material is transferred to a second pattern structure to open the second pattern: the pattern of the first-surface medium-shaped pattern structure of the printing material layer is transferred to the substrate: = medium: the second material layer of the transfer material layer. And removing the remaining transfer in accordance with the present invention - the preferred embodiment comprises at least a step of coating a transfer material to form a layer of transfer material to perform the baking step. - the younger brother - on the surface, and on the transfer EMBODIMENT OF THE INVENTION The present invention discloses a nano-transfer flat process, which can be used to reduce the particle, the warpage of the wafer and the uneven distribution of the pattern, thereby obtaining high quality. In order to make the description of the present invention i-flat and complete, the following description can be referred to and the drawings of Figures 2A to 2 are used. Please refer to Figures 2A to 2J for drawing. Illustrated in accordance with a preferred embodiment of the present invention Process profile of the transfer process. For nano transfer: First, the mold core 200 is provided, wherein the mold core 2 has an opposite surface plus 204, and the surface of the mold core 200 is provided with a pressure of 2 In the present invention, in the present invention, the material of the mold core can be used as a light-transmitting material. In addition, the pattern of the pattern knot 206 can be a nano pattern or a micro pattern. Next, the surface of the mold 200 having the pattern structure 2〇6 is subjected to surface treatment 'to form an anti-adhesive surface on the surface 2〇2 of the mold core 2。. In the preferred embodiment, The surface of the mold core is removed from the coating-layer release layer stage, whereby the surface of the mold core is modified from 2〇2, and in the mold core 2, the surface 202 is formed with an anti-stick surface 21〇. , that is, the surface of the release layer 2 (10), as shown in Figure 2B. In the present invention, the anti-adhesive surface of the release layer is between 5 degrees and substantially 1 degree of water. The anti-adhesion of 70% of the barley 202 has the surface 202 of the pattern structure 206. After the smearing, the transfer material 212 is applied to the surface 2 of the mold core (10) (> 2, and the second structure is as shown in Fig. 2C. The transfer material 212 can be, for example, a poly 2: Dilute methyl ester (P〇lymethylmethacry H (10) called or photosensitive material, : Liuguang: When coating the transfer material MS' can be selected according to the material requirements, selective small admixture in the transfer material 212 to reduce the transfer The printing material Μ: the point lags the 200819911 coefficient, and the surface structure 202 of the transfer material 212 can be easily made to heat the transfer material 212 by JL, for example, by baking, and the material is transferred to the P material. The solvent in 212, and the transfer material 212 transfer material layer 214 is located on the surface 202 of the mold core 20, as shown in Fig. 2d in the present invention. The baking step of 212 is preferably The degree of control is between 30t and 50th, and the ratio is preferably between 5 seconds and 2 hours. Preferably, the thickness of the transfer layer 214 is controlled by a pattern structure 2° 6 interposed between the actual f 2 can and the surface 2 2 to be embedded in the transfer material layer: surface 216. Further, the transfer material layer Preferably, the surface of the 214 is substantially flat with respect to the surface 2 - face 21 8 to facilitate the subsequent bonding process. In another embodiment of the present invention, when the transfer material η:min =, after the heat treatment process Further selectively, the transfer step is performed, wherein the exposure step/day (10) performed on the transfer (four) 212 is preferably controllable between about 5 seconds and substantially Μ minutes from the top of the mold. When the 2°° is composed of a light-permeable material, the exposed light/surface 2〇2 illuminates the transfer material 212 in the direction of the surface 204 of the mold 200, and may also be from 槿9ηπ+main#, surface 202. The surface 204 of the surface of the ^200 is oriented toward the surface of the mold 2 = direction & transfer material 212' to complete the light of the transfer material layer 214 = aspect ' when the mold is made of opaque material The surface 202 of 2°° faces the mold core 2. The surface of the crucible - D a material 212' to complete the production of the transfer material layer 214. The production of the transfer material layer 214 is completed. The substrate 220 is provided, and the surface 222 of the substrate 9 200819911 plate 220 is paired. Then, the substrate 220 is pressed onto the surface of the substantially flat surface 218 of the phase plate 220 to be freely applied over the transfer material layer 214. The surface 218 of the printed material layer 214, such as the first surface 218 Μ ^ ^, after the press-bonding process, the material of the transfer material layer 214 18 and the surface 222 of the substrate 220. Combine. =' You can perform the demoulding step to make the mold fan =. In the demolding process, 'Because the mold is 2 〇. The surface of 2. 2 has been previously
:處理而成抗沾黏表面，因此轉印材料層214對模仁之 义面2〇2的附著力明顯小於轉印材料層214對基板220之表 m的附者力。如此—來’藉由轉印材料層214對模仁2〇〇 ”對基板220之附著力的差異，可使模仁⑽順利脫離轉印 材抖層214，而在轉印材㈣214之表面216形成圖案結構 似，如弟2G圖所示。由於轉印材料層214之表面的圖 案結構224係因模仁細之圖案結構206嵌合在轉印材料層 214之表面216所造成，因此轉印材料層214之表面216的圖 案結構224與模仁之表面2()2的圖案結構2()6為互補的 圖案結構，而可完全複製模仁2〇〇之表面2〇2的圖形。 完成轉印材料層214之脫模步驟後，可利用例如蝕刻方 式，以將轉印材料層214之圖案結構224的圖形轉移至基板 220之表面222上。在本示範實施例中，可利用感應耦合電漿 (Inductively Coupled Plasma; ICP)蝕刻技術進行全面性= 刻’直至圖案結構224凹陷處下方之基板22〇表面222的一 部分也遭到移除，以在基板220之表面222中形成圖案結構 226,如此可將圖案結構224之圖形轉移至基板220之表面222 200819911 陷處的所—不。經蚀刻後，轉印材料層214之結構非凹 成圖2 未完全移除。因此，在基板⑽之表面加形 米轉印=226之後’移除剩餘之轉印材料層214，即完成奈 木轉印製程，如帛2J圖所示。 朽_本發明之奈米轉印製程可應用在積體電路元件、發光二 極體元件、兩射—技触—L 70 田、一極體70件或有機發光二極體元件的製作 ，來進行奈米微結構圖形之轉印。: The adhesive-resistant surface is treated, so that the adhesion of the transfer material layer 214 to the mold surface 2〇2 is significantly smaller than the adhesion force of the transfer material layer 214 to the surface of the substrate 220. Thus, the difference in the adhesion of the mold member 2 to the substrate 220 by the transfer material layer 214 allows the mold core (10) to be smoothly separated from the transfer material layer 214 and patterned on the surface 216 of the transfer material (four) 214. The structure is similar, as shown in Fig. 2G. Since the pattern structure 224 of the surface of the transfer material layer 214 is caused by the pattern structure 206 of the mold core being fitted on the surface 216 of the transfer material layer 214, the transfer material layer The pattern structure 224 of the surface 216 of the 214 and the pattern structure 2 () 6 of the surface 2 of the mold core are complementary pattern structures, and the pattern of the surface 2〇2 of the mold core 2 can be completely reproduced. After the demolding step of layer 214, the pattern of pattern structure 224 of transfer material layer 214 can be transferred to surface 222 of substrate 220 using, for example, etching. In the exemplary embodiment, inductively coupled plasma can be utilized ( Inductively Coupled Plasma; ICP) etching is performed comprehensively = until a portion of the substrate 22 surface 222 below the recess of the pattern structure 224 is also removed to form a pattern structure 226 in the surface 222 of the substrate 220. Pattern structure 224 The pattern is transferred to the surface 222 of the substrate 220. 200819911 The position of the trap is not. After the etching, the structure of the transfer material layer 214 is not concave. The shape of the substrate (10) is not completely removed. Therefore, the transfer of the substrate on the surface of the substrate (10) = After 226, the remaining transfer material layer 214 is removed, that is, the nano-transfer process is completed, as shown in FIG. 2J. The nano transfer process of the present invention can be applied to integrated circuit components and light-emitting diodes. The component, the two-shot-technical touch-L 70 field, the 70-piece one-pole body or the organic light-emitting diode element are used for the transfer of the nano-structured pattern.
由上述本發明較佳實施例可知，本發明之一優點就是因 為士本^明之奈米轉印製程係先將轉印材料塗佈在模仁之圖案 再將轉印材料壓貼至基板之表面上，然後將模仁從 轉=料上移除。因此，可完全複製模仁表面上之圖形，並 可提同圖形轉印的可靠度。故’運用本發明之製程，不僅可 提高轉印製程良率，更可獲得高品質之轉印圖形。 ,由上述本發明較佳實施例可知，運用本發明之奈米轉印 製耘可大幅降低微粒、晶圓翹曲以及圖案分布不均的影響， 進而可提升圖案轉印之品質。 I由上述本發明較佳實施例可知，運用本發明之奈米轉印 製耘無須使用昂貴之壓印機台，因此可大大地降低製程成本。 雖然本發明已以一較佳實施例揭露如上，然其並非用以 限定本發明，任何在此技術領域中具有通常知識者，在不脫 離本發明之精神和範圍内，當可作各種之更動與潤飾，因此 本發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 11 200819911 第1A圖至第1G圖係繪示傳統奈米轉印製程之製程剖面 圖。 第2A圖至第2J圖係繪示依照本發明_較佳實施例的一 種奈米轉印製程之製程剖面圖。According to the preferred embodiment of the present invention described above, one of the advantages of the present invention is that the transfer process of the substrate is applied to the pattern of the mold and the transfer material is pressed onto the surface of the substrate. Then remove the mold from the material. Therefore, the pattern on the surface of the mold can be completely reproduced, and the reliability of the pattern transfer can be improved. Therefore, by using the process of the present invention, not only the transfer process yield can be improved, but also a high-quality transfer pattern can be obtained. According to the preferred embodiment of the present invention described above, the nano transfer printing method of the present invention can greatly reduce the influence of unevenness of the particles, the warpage of the wafer, and the uneven distribution of the pattern, thereby improving the quality of the pattern transfer. As is apparent from the above preferred embodiment of the present invention, the use of the nano-transfer enamel of the present invention eliminates the need for an expensive embossing machine, thereby greatly reducing the process cost. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is intended that various modifications may be made without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims. [Simple description of the diagram] 11 200819911 The 1A to 1G drawings show the process profile of the conventional nano-transfer process. 2A through 2J are cross-sectional views showing a process of a nano-transfer process in accordance with the preferred embodiment of the present invention.
主要元件符號說明】 100 :基板 104 :轉印材料層 108 :圖案結構 112 :圖案結構 200 :模仁 204 :表面 208 :脫模層 212 :轉印材料 2 16 :表面 220 :基板 224 :圖案結構 102 ： 表面 106: 模仁 110 ： 圖案結構 114： 脫模層 202 ： 表面 206 ： 圖案結構 210 ： 抗沾黏表面 214 ： 轉印材料層 218 ： 表面 222 ： 表面 226 ： 圖案結構 12Main component symbol description] 100: substrate 104: transfer material layer 108: pattern structure 112: pattern structure 200: mold core 204: surface 208: release layer 212: transfer material 2 16 : surface 220: substrate 224: pattern structure 102: surface 106: mold core 110: pattern structure 114: release layer 202: surface 206: pattern structure 210: anti-stick surface 214: transfer material layer 218: surface 222: surface 226: pattern structure 12