TWI414647B - Method for fabricating submicro patterned-sapphire substrate - Google Patents
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Abstract
Description
本發明係關於一種用以製作次微米圖樣化藍寶石基板之方法,並且特別地,本發明係關於一種用以製作適用於氮化鎵發光二極體之次微米圖樣化藍寶石基板。This invention relates to a method for making sub-micron patterned sapphire substrates, and in particular, to a sub-micron patterned sapphire substrate suitable for use in gallium nitride light-emitting diodes.
發光二極體是一種半導體元件,起初多用作指示燈或顯示板的發光源,然而,隨著白光二極體的出現,其亦被用於照明之功能。相較於傳統光源,發光二極體具有效率高、壽命長以及不易損壞的優點,因此被視為21世紀的新型光源。當加上正向電壓時,發光二極體可發出單色光,並且根據所採用之半導體材料的化學組成成分,可令發光二極體發出近紫外光、可見光或紅外光。The light-emitting diode is a semiconductor component that was originally used as a light source for an indicator light or a display panel. However, with the appearance of a white light diode, it is also used for illumination. Compared with the traditional light source, the light-emitting diode has the advantages of high efficiency, long life and not easy to be damaged, so it is regarded as a new light source in the 21st century. When a forward voltage is applied, the light-emitting diode emits monochromatic light, and depending on the chemical composition of the semiconductor material used, the light-emitting diode emits near-ultraviolet, visible or infrared light.
然而,傳統發光二極體在發光效率上仍嫌不足,因此為了同時改善發光二極體內部之量子效率以及光萃取效率,圖樣化藍寶石基板被採用以作為發光二極體之基材。圖樣化藍寶石基板可藉由橫向磊晶生長以降低氮化鎵晶格中錯位之密度而達到增加輻射結合之效果,並進一步地提升內部量子效率。另一方面,藉由圖樣化藍寶石基板上之圖樣可使被侷限於發光二極體之光線具更高的機率被萃取出來,故可提升發光二極體之光萃取率。However, conventional light-emitting diodes are still insufficient in luminous efficiency. Therefore, in order to simultaneously improve the quantum efficiency and light extraction efficiency inside the light-emitting diode, a patterned sapphire substrate is used as a substrate of the light-emitting diode. The patterned sapphire substrate can increase the radiation bonding effect by lateral epitaxial growth to reduce the density of misalignment in the gallium nitride crystal lattice, and further enhance the internal quantum efficiency. On the other hand, by patterning the pattern on the sapphire substrate, the light limited to the light-emitting diode can be extracted with a higher probability, so that the light extraction rate of the light-emitting diode can be improved.
先前技術中,應用在氮化鎵發光二極體的圖樣化藍寶石基板之線寬約在數微米等級。為了更進一步提升發光效率,次微米圖樣化藍寶石基板已被應用於發光二極體中。製作次微米圖樣化藍寶石基板之方法係於基板上製作出具有次微米圖樣之光阻,再以此光阻對基板進行蝕刻即可獲得次微米圖樣化之基板。此外,於製作光阻前先以物理氣相沉積法或化學氣相沉積法製作一薄膜層作為蝕刻擋層,可增加次微米圖樣化基板的的蝕刻深度,使光線有較多的接觸面積而提高光萃取率。In the prior art, the line width of the patterned sapphire substrate applied to the gallium nitride light-emitting diode is on the order of several micrometers. In order to further improve the luminous efficiency, the sub-micron patterned sapphire substrate has been applied to the light-emitting diode. The method of fabricating the sub-micron patterned sapphire substrate is to form a sub-micron pattern photoresist on the substrate, and then etching the substrate by the photoresist to obtain a sub-micron patterned substrate. In addition, a thin film layer is formed as an etch stop layer by physical vapor deposition or chemical vapor deposition before the photoresist is formed, which can increase the etching depth of the sub-micron patterned substrate, so that the light has more contact area. Increase the light extraction rate.
於先前技術中,用以製作次微米圖樣化基板之方法有三種。第一種製作方式係以聚苯乙烯在基板上鋪陳奈米球體以作為蝕刻擋層,然而,此方法於均勻度上難以控制,會導致晶圓不完整。另一種方法係利用電子束蒸鍍於基板上形成一鎳層作為蝕刻擋層,接著再退火使鎳進行自組裝,然而,此方法耗時並且無法控制結構的均勻性。再者,以半導體製程常用之步進式曝光法也可得到次微米圖樣化基板,然而,此方法需要昂貴的設備以及機台。In the prior art, there are three methods for fabricating sub-micron patterned substrates. The first method is to use a polystyrene to lay a nanosphere on the substrate as an etch stop. However, this method is difficult to control in uniformity and causes the wafer to be incomplete. Another method uses electron beam evaporation on a substrate to form a nickel layer as an etch stop, followed by annealing to self-assemble the nickel. However, this method is time consuming and does not control the uniformity of the structure. Furthermore, sub-micron patterned substrates can also be obtained by a stepwise exposure method commonly used in semiconductor processes. However, this method requires expensive equipment and a machine.
上述製作次微米圖樣之方法具有製作出之基板結構不完整、耗時或高成本的缺點,故不利於次微米圖樣化藍寶石基板的生產。The above method for fabricating a sub-micron pattern has the disadvantages of incomplete, time-consuming or high cost of the fabricated substrate structure, which is disadvantageous for the production of sub-micron patterned sapphire substrates.
因此,本發明之一範疇在於提供一種製作次微米圖樣化藍寶石基板之方法,可以簡易並穩定的製程製作具有次微米圖樣之基板,以解決上述問題。Accordingly, it is an object of the present invention to provide a method of fabricating a sub-micron patterned sapphire substrate that can be fabricated in a simple and stable process to solve the above problems.
根據一具體實施例,本發明之製作次微米圖樣化藍寶石基板之方法包含下列步驟:首先,於一藍寶石基板上形成蝕刻擋層;接著,於蝕刻擋層上形成光阻層;之後,以光罩直接接觸光阻層;之後,以光束透過光罩照射光阻層,接著對光阻層進行顯影以轉移光罩上之次微米圖樣至蝕刻擋層;之後,透過具有次微米結構之光阻層對蝕刻擋層進行蝕刻以形成第一蝕刻擋層;最後,蝕刻具有此第一蝕刻擋層之藍寶石基板以獲得次微米圖樣化藍寶石基板。According to a specific embodiment, the method for fabricating a sub-micron patterned sapphire substrate of the present invention comprises the steps of: first forming an etch stop layer on a sapphire substrate; then forming a photoresist layer on the etch stop layer; The cover directly contacts the photoresist layer; then, the light beam is transmitted through the photomask through the photomask, and then the photoresist layer is developed to transfer the sub-micron pattern on the photomask to the etch stop layer; then, the photoresist having the sub-micron structure is transmitted through The layer etches the etch stop layer to form a first etch stop layer; finally, the sapphire substrate having the first etch stop layer is etched to obtain a sub-micron patterned sapphire substrate.
於本具體實施例中,光罩直接接觸光阻層,因此光線穿過光罩時可避免繞射現象導致結構的尺度過大以及均勻性受到影響。In this embodiment, the reticle directly contacts the photoresist layer, so that when the light passes through the reticle, the diffraction phenomenon is prevented to cause the scale of the structure to be too large and the uniformity to be affected.
本發明之另一範疇在於提供製作次微米圖樣化藍寶石基板之方法,以解決上述問題。Another aspect of the present invention is to provide a method of making a sub-micron patterned sapphire substrate to solve the above problems.
根據一具體實施例,本發明之製作次微米圖樣化藍寶石基板之方法包含下列步驟:首先,製作具有次微米圖樣之母模;接著,將軟性材料填入母模中以翻製一子模,故此子模上會具有相對於母模之次微米圖樣之相對圖樣;之後,將壓印材料填入子模之相對圖樣中;之後,再以子模對藍寶石基板進行壓印,因此,於子模之相對圖樣中的壓印材料可以建立在藍寶石基板上而形成具有次微米圖樣之光阻層;最後,藉由光阻層對藍寶石基板進行蝕刻,即可獲得次微米圖樣化之藍寶石基板。According to a specific embodiment, the method for fabricating a sub-micron patterned sapphire substrate of the present invention comprises the steps of: first, fabricating a master mold having a sub-micron pattern; and then, filling a soft material into the master mold to convert a sub-mold, Therefore, the sub-mold will have a relative pattern with respect to the sub-micron pattern of the master mold; after that, the imprint material is filled into the relative pattern of the sub-mold; after that, the sapphire substrate is imprinted by the sub-mold, so The embossing material in the relative pattern of the mold can be formed on the sapphire substrate to form a photoresist layer having a sub-micron pattern; finally, the sub-micron patterned sapphire substrate can be obtained by etching the sapphire substrate by the photoresist layer.
於本具體實施例中,光阻層上之次微米圖樣係以具有次微米級圖樣之模具製成,因此可避免先前技術中之曝光顯影方法的繞射現象對光阻層所造成之影響。In this embodiment, the sub-micron pattern on the photoresist layer is formed in a mold having a sub-micron pattern, thereby avoiding the effect of the diffraction phenomenon of the exposure development method of the prior art on the photoresist layer.
於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.
請一併參閱圖一、圖二A至圖二G,圖一係繪示根據本發明之一具體實施例之製作次微米圖樣化藍寶石基板3之方法的步驟流程圖,圖二A至圖二G則繪示圖一之方法之各步驟的示意圖。Referring to FIG. 1 and FIG. 2A to FIG. 2G together, FIG. 1 is a flow chart showing the steps of a method for fabricating a sub-micron patterned sapphire substrate 3 according to an embodiment of the present invention, and FIG. 2A to FIG. G is a schematic diagram showing the steps of the method of FIG.
如圖一所示,本具體實施例之方法可包含步驟S10至步驟S22。於步驟S10,準備一藍寶石基板20,如圖二A所示。接著,於步驟S12,在藍寶石基板30之上設置蝕刻擋層32,如圖二B所示,其中蝕刻阻擋層32的材質可以是氧化矽,氮化系,或是氮氧化矽,其形成方式可為一般的物理氣相沉積法或是化學氣相沉積法,例如電漿輔助化學氣相沉積(PECVD;Plasma Enhanced Chemical Vapor Deposition)法或是高密度電漿化學氣相沉積(HDPCVD;High Density Plasma Chemical Vapor Deposition)法。於步驟S14,在蝕刻擋層32上設置光阻層34,如圖二C所示。於步驟S16中,以光罩M接觸光阻層34,如圖二D所示。於步驟S18中,以光束透過光罩M照射光阻層34而進行曝光流程,如圖二D所示,接著,對光阻層34進行顯影流程以轉移光罩M上之次微米圖樣至光阻層34,如圖二E所示。於步驟S20,透過具有次微米圖樣之光阻層34對蝕刻擋層32進行蝕刻而形成第一蝕刻擋層320,再將光阻層34移除,如圖二F所示;接著,於步驟S22中,以濕蝕刻製程蝕刻具有第一蝕刻擋層320之藍寶石基板30進而獲得次微米圖樣化藍寶石基板3,如圖二G所示。上述濕蝕刻製程,係用磷酸與硝酸之間以1比3到1比5之間進行混合,其中蝕刻的溫度約在200到350℃之間。請注意,於實務中,使用者或設計者可改變光罩M上之次微米圖樣而使次微米圖樣化藍寶石基板3上之次微米圖樣產生變化。As shown in FIG. 1, the method of this embodiment may include steps S10 to S22. In step S10, a sapphire substrate 20 is prepared as shown in FIG. 2A. Next, in step S12, an etch stop layer 32 is disposed on the sapphire substrate 30, as shown in FIG. 2B, wherein the material of the etch barrier layer 32 may be yttrium oxide, nitrided, or hafnium oxynitride. It can be a general physical vapor deposition method or a chemical vapor deposition method, such as Plasma Enhanced Chemical Vapor Deposition (PECVD) or high density plasma chemical vapor deposition (HDPCVD; High Density). Plasma Chemical Vapor Deposition) method. In step S14, a photoresist layer 34 is disposed on the etch stop layer 32, as shown in FIG. In step S16, the photomask M is contacted with the photomask M as shown in FIG. In step S18, the exposure process is performed by irradiating the photoresist layer 34 with the light beam through the mask M, as shown in FIG. 2D, and then the development process of the photoresist layer 34 is performed to transfer the sub-micron pattern on the mask M to the light. The resist layer 34 is as shown in FIG. 2E. In step S20, the etch stop layer 32 is etched through the photoresist layer 34 having the sub-micron pattern to form the first etch stop layer 320, and the photoresist layer 34 is removed, as shown in FIG. 2F; then, in the step In S22, the sapphire substrate 30 having the first etch stop layer 320 is etched by a wet etching process to obtain the sub-micron patterned sapphire substrate 3, as shown in FIG. The wet etching process described above is carried out by mixing between phosphoric acid and nitric acid at a ratio of from 1 to 3 to 1 to 5, wherein the etching temperature is between about 200 and 350 °C. Please note that in practice, the user or designer can change the sub-micron pattern on the reticle M to cause a change in the sub-micron pattern on the sub-micron patterned sapphire substrate 3.
於本具體實施例中,可利用物理氣相沉積(PVD)或化學氣相沉積(CVD)之方法於藍寶石基板30上成長蝕刻擋層32。接著,可以旋轉塗佈的方式塗佈光阻層34於蝕刻擋層32上。請注意,於實務中,光阻層34之厚度盡量薄以利於次微米圖樣之製作,舉例而言,光阻層34可為0.4μm至0.8μm。此外,光阻層34於塗佈後也要保持潔淨,避免光罩M接觸光阻層34時因光阻層34表面之微粒而形成兩者之間的空隙,導致光束產生繞射現象而影響次微米圖樣之線寬。In this embodiment, the etch stop layer 32 can be grown on the sapphire substrate 30 by physical vapor deposition (PVD) or chemical vapor deposition (CVD). Next, the photoresist layer 34 can be applied to the etch stop layer 32 by spin coating. Please note that in practice, the thickness of the photoresist layer 34 is as thin as possible to facilitate fabrication of the sub-micron pattern. For example, the photoresist layer 34 can be from 0.4 μm to 0.8 μm. In addition, the photoresist layer 34 is also kept clean after coating, and the gap between the two is formed by the particles on the surface of the photoresist layer 34 when the mask M contacts the photoresist layer 34, thereby causing the diffraction phenomenon of the light beam. The line width of the sub-micron pattern.
於步驟S16中,先以光罩M直接接觸光阻層34,再進行後續的曝光顯影製程,因此,光罩M以及光阻層34之間並無空隙。當光束(例如365nm之紫外光)透過光罩M照射至光阻層34之上時,可避免因空隙而產生的繞射現象導致次微米圖樣的線寬變大。光罩M與光阻層34係硬式接觸,其接觸之方法請參閱圖三,圖三係繪示圖一之方法之步驟S16的詳細步驟流程圖。如圖三所示,步驟S16進一步包含步驟S160以及步驟S162。於步驟S160,軟烤光阻層34,接著,於步驟S162,對光罩M施力使其緊密接觸光阻層34。In step S16, the photomask layer 34 is directly contacted with the photoresist layer 34, and then the subsequent exposure and development process is performed. Therefore, there is no gap between the mask M and the photoresist layer 34. When a light beam (for example, 365 nm ultraviolet light) is irradiated onto the photoresist layer 34 through the mask M, the diffraction phenomenon due to the void can be prevented from causing the line width of the submicron pattern to become large. The mask M is in hard contact with the photoresist layer 34. For the method of contacting the lens, refer to FIG. 3. FIG. 3 is a flow chart showing the detailed steps of the step S16 of the method of FIG. As shown in FIG. 3, step S16 further includes step S160 and step S162. In step S160, the photoresist layer 34 is soft baked, and then, in step S162, the photomask M is biased to closely contact the photoresist layer 34.
由於軟烤可使光阻層34處於黏滯性最佳的狀態,因此,光阻層34可貼合蝕刻擋層32而不至於脫落。此外,當光罩M接觸光阻層34時,光阻層34的黏滯性可令光罩M以及光阻層34緊密接觸,以避免兩者之間出現空隙。Since the soft baking can make the photoresist layer 34 in a state of optimum viscosity, the photoresist layer 34 can be attached to the etching barrier layer 32 without falling off. In addition, when the photomask M contacts the photoresist layer 34, the viscosity of the photoresist layer 34 can bring the photomask M and the photoresist layer 34 into close contact to avoid a gap between the two.
於本具體實施例中,光阻層34被光束照射之部分在顯影過程中可去除,亦即,光阻層34係由正光阻所製成。但於實務中,光阻層亦可以負光阻製成。光阻層以正光阻或負光阻所製成端看使用者或設計者需求而定,本發明並不加以限制。In this embodiment, the portion of the photoresist layer 34 that is illuminated by the beam is removable during development, that is, the photoresist layer 34 is made of a positive photoresist. However, in practice, the photoresist layer can also be made of negative photoresist. The photoresist layer is made of a positive photoresist or a negative photoresist, depending on the needs of the user or the designer, and the invention is not limited thereto.
在上述之步驟S20中,可利用蝕刻系統並且以顯影過而具有次微米圖樣之光阻層34為擋層蝕刻該蝕刻擋層32,致使蝕刻擋層32具有與光阻層34相同之次微米圖樣,此具有次微米圖樣之蝕刻擋層32即為第一蝕刻擋層320。In the above step S20, the etch stop layer 32 may be etched using the etching system and the photoresist layer 34 having the sub-micron pattern developed as a barrier layer, so that the etch stop layer 32 has the same submicron as the photoresist layer 34. The etch stop layer 32 having the sub-micron pattern is the first etch stop layer 320.
請再參閱圖二G,如圖二G所示,步驟S22係以阻擋結構36為擋層並利用濕蝕刻製程蝕刻藍寶石基板30進而獲得次微米圖樣化藍寶石基板3。由於濕蝕刻製程係將基板整體浸入蝕刻液中進行蝕刻,因此藍寶石基板的蝕刻具有一定程度的等向性。換言之,依據所使用的蝕刻液不同,次微米圖樣化藍寶石基板3上預定被蝕刻之處所蝕刻出之圖樣之尺寸會大於或等於第一蝕刻擋層320之次微米圖樣之尺寸。然而,藉由步驟S16之光罩M與光阻層34硬式接觸而避免繞射現象,可控制第一蝕刻擋層320之次微米圖樣之尺寸並間接控制次微米圖樣化藍寶石基板3上之圖樣A的尺寸使其維持在次微米等級。另一方面,如圖二G所示,次微米圖樣化藍寶石基板3上的兩個被蝕刻處(圖樣A)之間亦可視為另一種次微米圖樣B,由於蝕刻液會帶有不同程度的等向性,因此圖樣B之尺寸亦可輕易地達到次微米等級。Referring to FIG. 2G again, as shown in FIG. 2G, step S22 uses the barrier structure 36 as a barrier layer and etches the sapphire substrate 30 by a wet etching process to obtain a sub-micron patterned sapphire substrate 3. Since the wet etching process etches the entire substrate by immersing it in the etching liquid, the etching of the sapphire substrate has a certain degree of isotropic property. In other words, the size of the pattern etched on the sub-micron patterned sapphire substrate 3 where it is intended to be etched may be greater than or equal to the size of the sub-micron pattern of the first etch stop layer 320, depending on the etchant used. However, by the hard mask of the mask M in step S16 and the photoresist layer 34 to avoid the diffraction phenomenon, the size of the sub-micron pattern of the first etch stop layer 320 can be controlled and the pattern on the sub-micron patterned sapphire substrate 3 can be indirectly controlled. The size of A is maintained at the sub-micron level. On the other hand, as shown in FIG. 2G, the two etched portions (pattern A) on the sub-micron patterned sapphire substrate 3 can also be regarded as another sub-micron pattern B, since the etching liquid will have different degrees. Isotropic, so the size of the pattern B can easily reach the sub-micron level.
另外,於本具體實施例中,步驟S22進一步於蝕刻完藍寶石基板30後除去第一蝕刻擋層320而獲得次微米圖樣化藍寶石基板3,並且以於本具體實施例之方法所製作出之次微米圖樣化藍寶石基板3可直接用於氮化鎵發光二極體之中。In addition, in the specific embodiment, step S22 further removes the first etch stop layer 320 after etching the sapphire substrate 30 to obtain the sub-micro pattern sapphire substrate 3, and is produced by the method of the specific embodiment. The micropatterned sapphire substrate 3 can be directly used in a gallium nitride light emitting diode.
上述具體實施例係以濕蝕刻方式蝕刻藍寶石基板,因此,蝕刻出之次微米圖樣均具有一定程度之等向性。然而,本發明之方法亦可以乾蝕刻方式蝕刻藍寶石基板。The above specific embodiment etches the sapphire substrate by wet etching, and therefore, the etched submicron pattern has a certain degree of isotropic. However, the method of the present invention can also etch a sapphire substrate by dry etching.
請參閱圖四A、圖四B以及圖四C。圖四A係繪示根據本發明之另一具體實施例之製作次微米圖樣化藍寶石基板6之方法的步驟流程圖。圖四B係繪示圖四A之方法之步驟S50的示意圖。圖四C係繪示圖四A之方法所製作出之次微米圖樣化藍寶石基板6的示意圖。Please refer to Figure 4A, Figure 4B and Figure 4C. 4A is a flow chart showing the steps of a method of fabricating a sub-micron patterned sapphire substrate 6 in accordance with another embodiment of the present invention. Figure 4B is a schematic diagram showing the step S50 of the method of Figure 4A. Figure 4C is a schematic view showing the sub-micron patterned sapphire substrate 6 produced by the method of Figure 4A.
如圖四A所示,本具體實施例與上述具體實施例不同處,在於本具體實施例之方法包含步驟S50以及步驟S52。於步驟S50,透過具有次微米圖樣之光阻層64對蝕刻擋層62進行蝕刻,具有次微米圖樣之光阻層64以及被蝕刻後之蝕刻擋層62共同形成阻擋結構66,如圖四B所示。於步驟S52,以乾蝕刻製程蝕刻具有阻擋結構66之藍寶石基板60進而獲得如圖四C所示之次微米圖樣化藍寶石基板6,其中乾蝕刻可以用誘發式偶合電漿(ICP;Inductively Coupled Plasma)或是反應性離子蝕刻(RIE;Reactive Ion Etching)進行。請注意,由於本具體實施例之方法之其他步驟係與上述具體實施例相對應之步驟大體上相同,故於此不再贅述。As shown in FIG. 4A, the specific embodiment is different from the above specific embodiment in that the method of the specific embodiment includes step S50 and step S52. In step S50, the etch stop layer 62 is etched through the photoresist layer 64 having the sub-micron pattern, and the photoresist layer 64 having the sub-micro pattern and the etched etch layer 62 are formed to form the barrier structure 66, as shown in FIG. 4B. Shown. In step S52, the sapphire substrate 60 having the barrier structure 66 is etched by a dry etching process to obtain the sub-micron patterned sapphire substrate 6 as shown in FIG. 4C, wherein the dry etching can be performed by inductively coupled plasma (ICP; Inductively Coupled Plasma). ) or reactive ion etching (RIE; Reactive Ion Etching). It should be noted that since the other steps of the method of the specific embodiment are substantially the same as the steps corresponding to the above specific embodiments, the details are not described herein.
本具體實施例之方法係以非等向性之乾蝕刻方式製作出次微米圖樣化藍寶石基板6,因此其剖面圖如圖四C所示。於實務中,乾蝕刻可為,但不受限於,電漿蝕刻。In the method of the present embodiment, the sub-micron patterned sapphire substrate 6 is formed by an isotropic dry etching method, and thus its cross-sectional view is as shown in FIG. In practice, dry etching can be, but is not limited to, plasma etching.
同樣地,由於本具體實施例之光罩係與光阻層直接接觸,光罩上之次微米圖樣可直接轉移到光阻層以及蝕刻擋層而形成具有次微米圖樣之阻擋結構。由於阻擋結構66之厚度係蝕刻擋層62加上光阻層64之厚度,故藉由阻擋結構66可蝕刻出深度較深之次微米結構圖樣化藍寶石基板6。此外,因乾蝕刻製程的非等向性蝕刻以及阻擋結構的存在可使藍寶石基板具有次微米圖樣。Similarly, since the reticle of the present embodiment is in direct contact with the photoresist layer, the sub-micron pattern on the reticle can be directly transferred to the photoresist layer and the etch stop layer to form a barrier structure having a sub-micron pattern. Since the thickness of the barrier structure 66 is the thickness of the etch stop layer 62 plus the photoresist layer 64, the submicron structure patterned sapphire substrate 6 having a deeper depth can be etched by the barrier structure 66. In addition, the sapphire substrate may have a sub-micron pattern due to the anisotropic etch of the dry etch process and the presence of the barrier structure.
上述具體實施例係以光罩直接接觸設置於藍寶石基板上之光阻層再進行曝光顯影流程,使光罩上之次微米圖樣可直接轉移到光阻層以及蝕刻擋層而形成具有次微米圖樣化之蝕刻擋層或阻擋結構。藉由此具有次微米圖樣之蝕刻擋層或阻擋結構,可簡易地以乾蝕刻或濕蝕刻製程完成次微米圖樣化藍寶石基板。相較於先前技術,以光罩直接接觸光阻層之方式可避免曝光時產生繞射現象而影響次微米圖樣之線寬,此外,由於此方法之流程可於黃光微影製程端達成次微米圖樣之製作,因此具有縮短製程時間、良好的結構均勻性以及低成本之優點。In the above embodiment, the photomask is directly contacted with the photoresist layer disposed on the sapphire substrate, and then the exposure and development process is performed, so that the submicron pattern on the photomask can be directly transferred to the photoresist layer and the etch barrier layer to form the submicron pattern. An etched barrier or barrier structure. The submicron patterned sapphire substrate can be easily fabricated by a dry etching or wet etching process by means of an etch stop or barrier structure having a submicron pattern. Compared with the prior art, the direct contact of the photoresist layer with the reticle can avoid the diffraction phenomenon during exposure and affect the line width of the sub-micron pattern. In addition, since the process of the method can achieve the sub-micron pattern on the yellow lithography process end. The production has the advantages of shortening process time, good structural uniformity and low cost.
請參閱圖五、圖六A至圖六G,圖五係繪示根據本發明之另一具體實施例之製作次微米圖樣化藍寶石基板8之方法的步驟流程圖,圖六A至圖六G則繪示圖五之方法之各步驟的示意圖。Referring to FIG. 5 and FIG. 6A to FIG. 6G, FIG. 5 is a flow chart showing the steps of the method for fabricating the sub-micron patterned sapphire substrate 8 according to another embodiment of the present invention, FIG. 6A to FIG. A schematic diagram showing the steps of the method of FIG.
如圖五所示,本具體實施例之方法可包含步驟S70至步驟S78。於步驟S70,製作具有次微米圖樣900之母模90,如圖六A所示。接著,於步驟S72,將軟性的材料灌注填入母模90以翻製一子模92,其中子模92配合母模90而具有相對於次微米圖樣900之相對圖樣920,如圖六B以及圖六C所示。之後,於步驟S74,將壓印材料84灌注填入子模92之相對圖樣920,如圖六D所示。之後,於步驟S76,利用子模92壓印藍寶石基板80進而將壓印材料84建立於藍寶石基板80上以形成光阻層82,此光阻層82具有與母模90之次微米圖樣900相同之圖樣,如圖六E以及圖六F所示。最後,於步驟S78,透過光阻層82對藍寶石基板80進行蝕刻製程而獲得次微米圖樣化藍寶石基板8,如圖六G所示。As shown in FIG. 5, the method of this embodiment may include steps S70 to S78. In step S70, a master 90 having a sub-micron pattern 900 is produced, as shown in FIG. Next, in step S72, a soft material is poured into the master mold 90 to reproduce a sub-mold 92, wherein the sub-mold 92 cooperates with the master mold 90 to have a relative pattern 920 with respect to the sub-micron pattern 900, as shown in FIG. Figure 6C shows. Thereafter, in step S74, the imprint material 84 is poured into the opposite pattern 920 of the sub-mold 92, as shown in FIG. Thereafter, in step S76, the sapphire substrate 80 is imprinted by the sub-mold 92 and the imprint material 84 is formed on the sapphire substrate 80 to form a photoresist layer 82 having the same sub-micron pattern 900 as the master 90. The pattern is shown in Figure 6E and Figure 6F. Finally, in step S78, the sapphire substrate 80 is etched through the photoresist layer 82 to obtain a sub-micron patterned sapphire substrate 8, as shown in FIG.
於本具體實施例中,母模90可由,但不受限於,矽材料所構成。此外,於實務中可以電子束或曝光機的蝕刻製程在矽母模90上形成次微米圖樣900。用來形成子模92之軟性材料於本具體實施例中可為,但不受限於,聚二甲基矽氧烷(polydimethylsiloxane,PDMS)。另外,灌注填入於子模92之相對圖樣920中的壓印材料於本具體實施例中可為,但不受限於,聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)。如同上述具體實施例,本具體實施例之藍寶石基板80亦可以透過乾蝕刻或濕蝕刻製程獲得次微米圖樣化藍寶石基板8,兩種蝕刻製程之差別在於乾蝕刻係非等向性蝕刻而濕蝕刻係等向性蝕刻,於實務中,可使用者或設計者需求而可任意選用上述兩種蝕刻製程,本發明並不對此加以限定。In this particular embodiment, the master mold 90 can be comprised of, but not limited to, a tantalum material. In addition, in practice, a sub-micron pattern 900 can be formed on the master mold 90 by an etch process of an electron beam or an exposure machine. The soft material used to form the sub-mold 92 can be, but is not limited to, polydimethylsiloxane (PDMS) in this embodiment. In addition, the imprinting material that is filled in the opposite pattern 920 of the sub-mold 92 can be, but is not limited to, polymethylmethacrylate (PMMA) in this embodiment. As in the above specific embodiment, the sapphire substrate 80 of the present embodiment can also obtain the sub-micron patterned sapphire substrate 8 through a dry etching or wet etching process. The difference between the two etching processes is that the dry etching is an isotropic etching and wet etching. It is an isotropic etching process. In practice, the above two etching processes can be arbitrarily selected by the user or the designer, and the invention is not limited thereto.
因此,藉由本具體實施例之方法,光阻層可透過模具形成次微米圖樣並透過直接接觸方式設置於藍寶石基板上。由於光阻層不需經過如先前技術之曝光顯影方式,故可避免繞射現象對光阻層之次微米圖樣產生的影響。同時,以模具製作光阻層的方法製程簡易,可避免先前技術之耗時或高成本的缺點。Therefore, by the method of the present embodiment, the photoresist layer can be formed on the sapphire substrate by a sub-micron pattern through a mold and by direct contact. Since the photoresist layer does not need to be exposed and developed as in the prior art, the influence of the diffraction phenomenon on the submicron pattern of the photoresist layer can be avoided. At the same time, the method of fabricating the photoresist layer by the mold is simple, and the disadvantages of the prior art are time-consuming or high-cost.
若藍寶石基板上具有蝕刻擋層,則上述方法可先將次微米圖樣轉移至該蝕刻擋層上,並透過具有次微米結構之蝕刻擋層對藍寶石基板進行蝕刻製程而獲得次微米圖樣化藍寶石基板。If the sapphire substrate has an etch stop layer, the method may first transfer the sub-micron pattern to the etch stop layer, and etch the sapphire substrate through an etch stop layer having a sub-micron structure to obtain a sub-micron patterned sapphire substrate. .
請參閱圖七以及圖八A至圖八E,圖七係繪示根據本發明之另一具體實施例之製作次微米圖樣化藍寶石基板8之方法的步驟流程圖,圖八A至圖八E則繪示圖七之方法之步驟的示意圖。請注意,本具體實施例之藍寶石基板80上進一步包含蝕刻擋層800。Referring to FIG. 7 and FIG. 8A to FIG. 8E, FIG. 7 is a flow chart showing the steps of the method for fabricating the sub-micron patterned sapphire substrate 8 according to another embodiment of the present invention, FIG. 8A to FIG. A schematic diagram showing the steps of the method of Figure 7. Please note that the sapphire substrate 80 of the present embodiment further includes an etch stop layer 800.
如圖七所示,本具體實施例與上一具體實施例不同處在於本具體實施例之方法進一步包含步驟S760、S780以、步驟S782以及步驟S784。於步驟S760,利用子模92壓印藍寶石基板80進而將壓印材料84建立於藍寶石基板80之蝕刻擋層800上,同樣地,光阻層82具有與母模90之次微米圖樣900相同之圖樣,如圖八A以及圖八B所示。於步驟S780,透過具有次微米圖樣之光阻層82蝕刻該蝕刻擋層800,以轉移光阻層82上之次微米圖樣至蝕刻擋層800,如圖八C所示。於步驟S782,移除光阻層82,如圖八D所示。最後,於步驟S784,透過具有次微米結構之蝕刻擋層800對藍寶石基板80進行蝕刻製程而獲得次微米圖樣化藍寶石基板8,如圖八E所示。請注意,本具體實施例之方法的其他步驟係與上述具體實施例之相對應步驟大體上相同,故於此不再贅述。As shown in FIG. 7, the specific embodiment is different from the previous embodiment in that the method of the specific embodiment further includes steps S760, S780, step S782, and step S784. In step S760, the sapphire substrate 80 is embossed by the sub-mold 92 and the embossed material 84 is formed on the etch stop layer 800 of the sapphire substrate 80. Similarly, the photoresist layer 82 has the same shape as the sub-micron pattern 900 of the master 90. The pattern is shown in Figure 8A and Figure 8B. In step S780, the etch stop layer 800 is etched through the photoresist layer 82 having the sub-micron pattern to transfer the sub-micron pattern on the photoresist layer 82 to the etch stop layer 800, as shown in FIG. In step S782, the photoresist layer 82 is removed, as shown in FIG. Finally, in step S784, the sapphire substrate 80 is etched through the etch stop layer 800 having the sub-micron structure to obtain the sub-micro pattern sapphire substrate 8, as shown in FIG. It should be noted that the other steps of the method of the specific embodiment are substantially the same as the corresponding steps of the foregoing specific embodiments, and thus are not described herein again.
於本具體實施例中,當次微米圖樣自光阻層82轉移至蝕刻擋層800後,光阻層82即被移除而僅透過蝕刻擋層800對藍寶石基板80進行蝕刻。然而,於另一具體實施例中,光阻層亦可保留而與蝕刻擋層形成阻擋結構,並可透過此阻擋結構對藍寶石基板進行蝕刻而獲得次微米圖樣化藍寶石基板。因此,光阻層於轉移次微米圖樣至蝕刻擋層後是否保留而進行蝕刻可根據使用者或設計者需求而定。In this embodiment, after the sub-micron pattern is transferred from the photoresist layer 82 to the etch stop layer 800, the photoresist layer 82 is removed and the sapphire substrate 80 is etched only through the etch stop layer 800. However, in another embodiment, the photoresist layer may also remain and form a barrier structure with the etch barrier layer, and the sapphire substrate may be etched through the barrier structure to obtain a sub-micron patterned sapphire substrate. Therefore, whether the photoresist layer is left after transferring the sub-micron pattern to the etch stop layer can be etched according to the needs of the user or the designer.
綜上所述,本發明之製作次微米圖樣化藍寶石基板之方法係以光罩直接接觸藍寶石基板上的光阻層並曝光,以於光阻層上形成次微米結構;或者,直接以模具製作具有次微米結構之光阻層並將其壓印於藍寶石基板上。相較於先前技術,本發明之方法可以避免曝光時繞射現象的影響,而使光阻層可以精確地顯影出所需的次微米圖樣。藉由本發明之方法,次微米圖樣化藍寶石基板可藉由對具有精確次微米圖樣之光阻層之藍寶石基板蝕刻而獲得。此外,由於本發明之方法製程簡易,故可避免先前技術之耗時以及高成本的缺點。In summary, the method for fabricating a sub-micron patterned sapphire substrate of the present invention is to directly contact the photoresist layer on the sapphire substrate with a photomask and expose it to form a sub-micron structure on the photoresist layer; or directly by using a mold. A photoresist layer having a submicron structure is imprinted on the sapphire substrate. Compared to the prior art, the method of the present invention can avoid the influence of the diffraction phenomenon during exposure, and the photoresist layer can accurately develop the desired sub-micron pattern. By the method of the present invention, a submicron patterned sapphire substrate can be obtained by etching a sapphire substrate having a photoresist layer having a precise submicron pattern. In addition, since the method of the present invention is simple in process, the disadvantages of the prior art and the high cost can be avoided.
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the
S10~S22...流程步驟S10~S22. . . Process step
3、6...次微米圖樣化藍寶石基板3, 6. . . Submicron patterned sapphire substrate
30、60...藍寶石基板30, 60. . . Sapphire substrate
32、62...蝕刻擋層32, 62. . . Etch barrier
34、64...光阻層34, 64. . . Photoresist layer
320...第一蝕刻擋層320. . . First etch stop
A、B...圖樣A, B. . . pattern
S160~S162...流程步驟S160~S162. . . Process step
S40~S52...流程步驟S40~S52. . . Process step
66...阻擋結構66. . . Barrier structure
S70~S78...流程步驟S70~S78. . . Process step
S760、S780~S784...流程步驟S760, S780~S784. . . Process step
90...母模90. . . Master model
900...次微米圖樣900. . . Submicron pattern
92...子模92. . . Submodule
920...相對圖樣920. . . Relative pattern
80...藍寶石基板80. . . Sapphire substrate
800...蝕刻擋層800. . . Etch barrier
82...光阻層82. . . Photoresist layer
84...壓印材料84. . . Imprint material
8...次微米圖樣化藍寶石基板8. . . Submicron patterned sapphire substrate
圖一係繪示根據本發明之一具體實施例之製作次微米圖樣化藍寶石基板之方法的步驟流程圖。1 is a flow chart showing the steps of a method of fabricating a sub-micron patterned sapphire substrate in accordance with an embodiment of the present invention.
圖二A至圖二G係繪示圖一之方法之各步驟的示意圖。2A to 2G are schematic views showing the steps of the method of FIG. 1.
圖三係繪示圖一之方法之光罩接觸光阻層的詳細步驟流程圖Figure 3 is a flow chart showing the detailed steps of the photomask contacting the photoresist layer of the method of Figure 1.
圖四A係繪示根據本發明之另一具體實施例之製作次微米圖樣化藍寶石基板之方法的步驟流程圖。4A is a flow chart showing the steps of a method of fabricating a sub-micron patterned sapphire substrate in accordance with another embodiment of the present invention.
圖四B係繪示圖四A之方法之步驟S50的示意圖。Figure 4B is a schematic diagram showing the step S50 of the method of Figure 4A.
圖四C係繪示圖四A之方法所製作出之次微米圖樣化藍寶石基板的示意圖。Figure 4C is a schematic view showing a sub-micron patterned sapphire substrate produced by the method of Figure 4A.
圖五係繪示根據本發明之另一具體實施例之製作次微米圖樣化藍寶石基板之方法的步驟流程圖。Figure 5 is a flow chart showing the steps of a method of fabricating a sub-micron patterned sapphire substrate in accordance with another embodiment of the present invention.
圖六A至圖六G係繪示圖五之方法之各步驟的示意圖。6A to 6G are schematic views showing the steps of the method of FIG.
圖七係繪示根據本發明之另一具體實施例之製作次微米圖樣化藍寶石基板之方法的步驟流程圖。Figure 7 is a flow chart showing the steps of a method of fabricating a sub-micron patterned sapphire substrate in accordance with another embodiment of the present invention.
圖八A至圖八E係繪示圖七之方法之步驟的示意圖。8A to 8E are schematic views showing the steps of the method of FIG.
S70~S78‧‧‧流程步驟S70~S78‧‧‧ Process steps
Claims (7)
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