SU1592414A1 - Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия - Google Patents

Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия

Info

Publication number
SU1592414A1
SU1592414A1 SU864149059A SU4149059A SU1592414A1 SU 1592414 A1 SU1592414 A1 SU 1592414A1 SU 864149059 A SU864149059 A SU 864149059A SU 4149059 A SU4149059 A SU 4149059A SU 1592414 A1 SU1592414 A1 SU 1592414A1
Authority
SU
USSR - Soviet Union
Prior art keywords
melting
power
pct
crystallization zone
heater
Prior art date
Application number
SU864149059A
Other languages
English (en)
Russian (ru)
Inventor
Dmitrij Ya Kravetskij
Lev M Zatulovskij
Leonid P Egorov
Boris B Pelts
Leonid S Okun
Viktor V Averyanov
Efim A Frejman
Aleksandr L Alishoev
Original Assignee
Vni Pk T I Elektrotermicheskog
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vni Pk T I Elektrotermicheskog filed Critical Vni Pk T I Elektrotermicheskog
Priority to SU864149059A priority Critical patent/SU1592414A1/ru
Priority to IN797/CAL/87A priority patent/IN167160B/en
Priority to PCT/SU1987/000117 priority patent/WO1988003967A1/ru
Priority to EP88900261A priority patent/EP0290629B1/de
Priority to AT88900261T priority patent/ATE71994T1/de
Priority to AT88900260T priority patent/ATE71993T1/de
Priority to US07/241,978 priority patent/US4957713A/en
Priority to HU88341A priority patent/HU203134B/hu
Priority to JP63500623A priority patent/JPH01501468A/ja
Priority to AU10581/88A priority patent/AU592921B2/en
Priority to DE8888900260T priority patent/DE3776333D1/de
Priority to AU10582/88A priority patent/AU592922B2/en
Priority to JP88500622A priority patent/JPH01501467A/ja
Priority to US07/241,988 priority patent/US4915773A/en
Priority to PCT/SU1987/000118 priority patent/WO1988003968A1/ru
Priority to EP19880900260 priority patent/EP0290628B1/de
Priority to HU88326A priority patent/HU203587B/hu
Priority to BR8705753A priority patent/BR8705753A/pt
Priority to BR8706332A priority patent/BR8706332A/pt
Priority to CN87108014A priority patent/CN1010037B/zh
Priority to YU215187A priority patent/YU215187A/xx
Priority to CN87108007A priority patent/CN1010036B/zh
Priority to IN933/CAL/87A priority patent/IN168216B/en
Application granted granted Critical
Publication of SU1592414A1 publication Critical patent/SU1592414A1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
SU864149059A 1986-11-26 1986-11-26 Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия SU1592414A1 (ru)

Priority Applications (23)

Application Number Priority Date Filing Date Title
SU864149059A SU1592414A1 (ru) 1986-11-26 1986-11-26 Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
IN797/CAL/87A IN167160B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-26 1987-10-13
US07/241,988 US4915773A (en) 1986-11-26 1987-10-23 Process for growing shaped single crystals
AT88900261T ATE71994T1 (de) 1986-11-26 1987-10-23 Anordnung zur zuechtung profilierter monokristalle.
AT88900260T ATE71993T1 (de) 1986-11-26 1987-10-23 Anordnung zur zuechtung profilierter monokristalle.
US07/241,978 US4957713A (en) 1986-11-26 1987-10-23 Apparatus for growing shaped single crystals
HU88341A HU203134B (en) 1986-11-26 1987-10-23 Apparatus for increasing monochristals of potically transvisible metal compound of high melting point
JP63500623A JPH01501468A (ja) 1986-11-26 1987-10-23 所定形状にした単結晶を成長する装置
AU10581/88A AU592921B2 (en) 1986-11-26 1987-10-23 Method of growing profiled monocrystals
DE8888900260T DE3776333D1 (de) 1986-11-26 1987-10-23 Anordnung zur zuechtung profilierter monokristalle.
PCT/SU1987/000117 WO1988003967A1 (en) 1986-11-26 1987-10-23 Method of growing profiled monocrystals
JP88500622A JPH01501467A (ja) 1986-11-26 1987-10-23 造形単結晶の成長方法
EP88900261A EP0290629B1 (en) 1986-11-26 1987-10-23 Device for growing profiled monocrystals
PCT/SU1987/000118 WO1988003968A1 (en) 1986-11-26 1987-10-23 Device for growing profiled monocrystals
EP19880900260 EP0290628B1 (de) 1986-11-26 1987-10-23 Anordnung zur züchtung profilierter monokristalle
HU88326A HU203587B (en) 1986-11-26 1987-10-23 Process for growing shaped one-cristals of optically transparent metal compound of high melting point
AU10582/88A AU592922B2 (en) 1986-11-26 1987-10-23 Apparatus for growing shaped single crystals
BR8705753A BR8705753A (pt) 1986-11-26 1987-10-28 Processo para o crescimento de cristais unicos conformados de compostos de metal refratario,oticamente transparentes
BR8706332A BR8706332A (pt) 1986-11-26 1987-11-24 Aparelho para o crescimento de cristais simples perfilados
CN87108014A CN1010037B (zh) 1986-11-26 1987-11-25 定型单晶的生长方法
YU215187A YU215187A (en) 1986-11-26 1987-11-26 Device for profiled crystals production
CN87108007A CN1010036B (zh) 1986-11-26 1987-11-26 成型单晶体生长设备
IN933/CAL/87A IN168216B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-26 1987-11-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU864149059A SU1592414A1 (ru) 1986-11-26 1986-11-26 Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия

Publications (1)

Publication Number Publication Date
SU1592414A1 true SU1592414A1 (ru) 1990-09-15

Family

ID=21268241

Family Applications (1)

Application Number Title Priority Date Filing Date
SU864149059A SU1592414A1 (ru) 1986-11-26 1986-11-26 Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия

Country Status (13)

Country Link
US (2) US4915773A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (2) EP0290628B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPH01501468A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (2) CN1010037B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (2) ATE71994T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (2) AU592921B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (2) BR8705753A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3776333D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
HU (2) HU203134B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (2) IN167160B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SU (1) SU1592414A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (2) WO1988003968A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
YU (1) YU215187A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2164267C1 (ru) * 1999-09-29 2001-03-20 ЗАО "Сафитек" Способ выращивания профилированных кристаллов тугоплавких соединений
RU2222644C1 (ru) * 2003-03-26 2004-01-27 Амосов Владимир Ильич Устройство для выращивания монокристаллов из расплава
RU2222645C1 (ru) * 2003-03-26 2004-01-27 Амосов Владимир Ильич Устройство для выращивания монокристаллов из расплава
RU2299280C1 (ru) * 2006-04-18 2007-05-20 Общество с ограниченной ответственностью "Профиль-С" (ООО "Профиль-С") Способ получения профилированных кристаллов тугоплавких соединений
RU2439214C1 (ru) * 2010-06-17 2012-01-10 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Способ выращивания профилированных кристаллов тугоплавких соединений
RU2534144C1 (ru) * 2013-06-27 2014-11-27 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Способ выращивания профилированных кристаллов тугоплавких соединений

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
WO1992001091A1 (en) * 1990-07-10 1992-01-23 Saphikon, Inc. Apparatus for growing hollow crystalline bodies from the melt
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
WO1992019797A1 (en) * 1991-04-26 1992-11-12 Mitsubishi Materials Corporation Process for pulling up single crystal
WO1993000462A1 (en) * 1991-06-24 1993-01-07 Komatsu Electronic Metals Co., Ltd. Device for pulling up single crystal
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JPH05194075A (ja) * 1992-01-24 1993-08-03 Nec Corp 単結晶育成法
JP2795036B2 (ja) * 1992-02-04 1998-09-10 信越半導体株式会社 単結晶引上装置
US5394830A (en) * 1993-08-27 1995-03-07 General Electric Company Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process
US5394420A (en) * 1994-01-27 1995-02-28 Trw Inc. Multiform crystal and apparatus for fabrication
JPH09110582A (ja) * 1995-10-11 1997-04-28 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 結晶製造装置
US5900059A (en) * 1996-05-29 1999-05-04 Komatsu Electronic Metals Co., Ltd. Method and apparatus for fabricating semiconductor single crystal
WO1998035074A1 (en) * 1997-02-06 1998-08-13 Crysteco, Inc. Method and apparatus for growing crystals
JP4059639B2 (ja) * 2001-03-14 2008-03-12 株式会社荏原製作所 結晶の引上装置
US6846434B2 (en) 2001-12-04 2005-01-25 Landauer, Inc. Aluminum oxide material for optical data storage
US7040323B1 (en) * 2002-08-08 2006-05-09 Tini Alloy Company Thin film intrauterine device
CN100465357C (zh) * 2003-04-23 2009-03-04 斯特拉化学株式会社 氟化物晶体的制造装置
TW200510581A (en) * 2003-07-17 2005-03-16 Stella Chemifa Corp Method for producing crystal of fluoride
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7632361B2 (en) * 2004-05-06 2009-12-15 Tini Alloy Company Single crystal shape memory alloy devices and methods
RU2261297C1 (ru) * 2004-08-05 2005-09-27 Амосов Владимир Ильич Способ выращивания монокристаллов из расплава методом амосова
US20060118210A1 (en) * 2004-10-04 2006-06-08 Johnson A D Portable energy storage devices and methods
US7763342B2 (en) * 2005-03-31 2010-07-27 Tini Alloy Company Tear-resistant thin film methods of fabrication
US20070246233A1 (en) * 2006-04-04 2007-10-25 Johnson A D Thermal actuator for fire protection sprinkler head
US20080075557A1 (en) * 2006-09-22 2008-03-27 Johnson A David Constant load bolt
US20080213062A1 (en) * 2006-09-22 2008-09-04 Tini Alloy Company Constant load fastener
US8684101B2 (en) * 2007-01-25 2014-04-01 Tini Alloy Company Frangible shape memory alloy fire sprinkler valve actuator
US8584767B2 (en) * 2007-01-25 2013-11-19 Tini Alloy Company Sprinkler valve with active actuation
US8007674B2 (en) 2007-07-30 2011-08-30 Tini Alloy Company Method and devices for preventing restenosis in cardiovascular stents
WO2009073609A1 (en) 2007-11-30 2009-06-11 Tini Alloy Company Biocompatible copper-based single-crystal shape memory alloys
US8382917B2 (en) * 2007-12-03 2013-02-26 Ormco Corporation Hyperelastic shape setting devices and fabrication methods
US7842143B2 (en) * 2007-12-03 2010-11-30 Tini Alloy Company Hyperelastic shape setting devices and fabrication methods
CN101868075B (zh) * 2009-04-15 2013-01-16 西北工业大学 一种用于超高温定向凝固的金属电阻加热装置
CN103160917A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯的拉制模板
KR101348737B1 (ko) * 2011-12-13 2014-01-09 (주) 다애테크 어퍼 쉴드 어셈블리 및 이를 구비한 사파이어 잉곳 제조장치
RU2507320C2 (ru) * 2012-02-01 2014-02-20 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Устройство и способ выращивания профилированных кристаллов тугоплавких соединений
CN103374755A (zh) * 2012-04-28 2013-10-30 洛阳高科钼钨材料有限公司 非整体式坩埚
US10124197B2 (en) 2012-08-31 2018-11-13 TiNi Allot Company Fire sprinkler valve actuator
CN103469304B (zh) * 2013-08-23 2015-11-25 江苏中电振华晶体技术有限公司 多支成形蓝宝石长晶装置及其长晶方法
CN103726101B (zh) * 2014-01-20 2016-04-13 江苏苏博瑞光电设备科技有限公司 一种减少导模法生长管状蓝宝石晶体开裂的收尾方法
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
CN108560049B (zh) * 2018-04-16 2019-09-06 湖南柿竹园有色金属有限责任公司 颜色可控的大尺寸多彩铋晶体的制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL103477C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-11-28
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US3298795A (en) * 1964-03-23 1967-01-17 Westinghouse Electric Corp Process for controlling dendritic crystal growth
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
NL6917398A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-03-18 1970-09-22
US3715194A (en) * 1970-10-29 1973-02-06 Union Carbide Corp Melt grown alumina crystals and process therefor
US3822111A (en) * 1971-02-25 1974-07-02 Sony Corp Apparatus for pulling up semiconductor crystals
US3868228A (en) * 1971-06-01 1975-02-25 Tyco Laboratories Inc Method of growing crystalline bodies from the melt
US3915656A (en) * 1971-06-01 1975-10-28 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
US3853489A (en) * 1971-11-08 1974-12-10 Tyco Laboratories Inc A non-wetting aid for growing crystalline bodies
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3961905A (en) * 1974-02-25 1976-06-08 Corning Glass Works Crucible and heater assembly for crystal growth from a melt
US3953174A (en) * 1975-03-17 1976-04-27 Tyco Laboratories, Inc. Apparatus for growing crystalline bodies from the melt
US4000030A (en) * 1975-06-09 1976-12-28 International Business Machines Corporation Method for drawing a monocrystal from a melt formed about a wettable projection
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
AT391887B (de) * 1977-07-21 1990-12-10 Pelts Boris Bentsionovich Ing Verfahren zum herstellen von kristallinen saphirrohren und einrichtung zu dessen durchfuehrung
US4325917A (en) * 1977-07-21 1982-04-20 Pelts Boris B Method and apparatus for producing sapphire tubes
US4267153A (en) * 1979-08-09 1981-05-12 Mobil Tyco Solar Energy Corporation Gravity dampened guidance system
US4267010A (en) * 1980-06-16 1981-05-12 Mobil Tyco Solar Energy Corporation Guidance mechanism
US4390505A (en) * 1981-03-30 1983-06-28 Mobil Solar Energy Corporation Crystal growth apparatus
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2164267C1 (ru) * 1999-09-29 2001-03-20 ЗАО "Сафитек" Способ выращивания профилированных кристаллов тугоплавких соединений
RU2222644C1 (ru) * 2003-03-26 2004-01-27 Амосов Владимир Ильич Устройство для выращивания монокристаллов из расплава
RU2222645C1 (ru) * 2003-03-26 2004-01-27 Амосов Владимир Ильич Устройство для выращивания монокристаллов из расплава
RU2299280C1 (ru) * 2006-04-18 2007-05-20 Общество с ограниченной ответственностью "Профиль-С" (ООО "Профиль-С") Способ получения профилированных кристаллов тугоплавких соединений
RU2439214C1 (ru) * 2010-06-17 2012-01-10 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Способ выращивания профилированных кристаллов тугоплавких соединений
RU2534144C1 (ru) * 2013-06-27 2014-11-27 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Способ выращивания профилированных кристаллов тугоплавких соединений

Also Published As

Publication number Publication date
BR8706332A (pt) 1988-07-19
JPH01501468A (ja) 1989-05-25
EP0290629A1 (de) 1988-11-17
IN168216B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-23
HUT51685A (en) 1990-05-28
EP0290628B1 (de) 1992-01-22
CN87108014A (zh) 1988-06-08
US4915773A (en) 1990-04-10
WO1988003967A1 (en) 1988-06-02
EP0290629B1 (en) 1992-01-22
AU1058188A (en) 1988-06-16
AU592921B2 (en) 1990-01-25
US4957713A (en) 1990-09-18
AU1058288A (en) 1988-06-16
AU592922B2 (en) 1990-01-25
JPH01501467A (ja) 1989-05-25
YU215187A (en) 1988-10-31
CN1010036B (zh) 1990-10-17
IN167160B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-08
WO1988003968A1 (en) 1988-06-02
BR8705753A (pt) 1988-06-28
HU203134B (en) 1991-05-28
CN87108007A (zh) 1988-06-08
HU203587B (en) 1991-08-28
EP0290628A1 (de) 1988-11-17
ATE71994T1 (de) 1992-02-15
CN1010037B (zh) 1990-10-17
EP0290629A4 (de) 1989-03-22
EP0290628A4 (de) 1989-03-23
ATE71993T1 (de) 1992-02-15
HUT51684A (en) 1990-05-28
DE3776333D1 (de) 1992-03-05

Similar Documents

Publication Publication Date Title
SU1592414A1 (ru) Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
EP0781865A3 (en) Process and apparatus for producing polycrystalline semiconductors
EP0286065A3 (en) Method and apparatus for preparing adhesives for application
MY112515A (en) Method for preparing molten silicon melt from polycrystalline silicon charge
MY112066A (en) Method for preparing molten silicon melt from polycrystalline silicon charge
MY132946A (en) Non-dash neck method for single crystal silicon growth
MY129966A (en) Method and device for producing monocrystals
EP1380674A3 (en) Apparatus and process for producing single crystal
FR2438499A1 (fr) Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante
FI872888L (fi) Anordning foer framstaellning av enkristall foer halvledare.
EP0390671A3 (en) Process for determination of concentrations of metal impurities in czochralski single crystal silicon
AU1726188A (en) Process and device for implementing hot chemical processes
JPS60180989A (ja) 化合物単結晶の製造方法
FR2649474B1 (fr) Procede permettant de reduire une contamination des bains de fusion a haute temperature et dispositif obtenu
JPS56104799A (en) Production of si single crystal and device therefor
Arentzen Impurity segregation in copper by controlled cooling treatment
JPS55121385A (en) Method and device for recovering energy
RU93013415A (ru) Способ вакуумной сепарации губчатого титана
JPS57183393A (en) Apparatus for growing single crystal
UA16688A1 (uk) Спосіб сиhтезу і hаплавлеhhя шихти гермаhоевлітиhу та пристрій для його здійсhеhhя
JPS6469589A (en) Process for growing compound semiconductor single crystal
JPS6437490A (en) Silicon single crystal pulling-up apparatus
RU2072698C1 (ru) Способ термической обработки изделий из титановых сплавов, содержащих алюминий
RU2072697C1 (ru) Способ получения редких металлов и их сплавов
JPS5711896A (en) Production of single crystal