Classifications

• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
  • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
  • Y10T117/10—Apparatus
  • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
  • Y10T117/1032—Seed pulling
  • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
  • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
  • Y10T117/10—Apparatus
  • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
  • Y10T117/1032—Seed pulling
  • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Definitions

• Very high quality is used on the basis of the quality of the installed components.
• the main characteristics of the quality are the exact size of the electrical components, the stability of the electrical circuit, the in-
• Flat thermal screens are made from a refractory material in the form of rings with a thickness of 0.5 to I mm each and are assembled in a package of 10 to 20 pieces.
• the height of the empty cylinder is made up to 6, the distance between the upper part of the consumer and the upper part of the heater
• the thickness of the heater 3 is not the same. Approximately 1/3 of the height of the heater is 3 times less than 4, and it has an identical thickness, while the height of the heater is 3 ⁇ ay 4.
• Heater 3 is equipped with a Type 5 and an optional 6, which is used to configure the multi-port 7 of the unit 20.
• Ligel 5 is made of molybdenum, has a secondary format, its internal performance is completed.
• Form 6 is made from a material wetted by a melting of a metal alloy, in particular from molybdenum. It is intended for ⁇ as ⁇ -
• the maximum diameter of the part 7 is 0.1-0.2 mm smaller than the maximum part number 13 and the part size 6, and the minimum part number is small; 13 agent 6.
• the pressurized camera I didn’t respond at part 19, after a quick turn off of 20. On the other hand, at 20, the charge was closed.
• a live television 24 should be from 1.5 to 2.0 diameters and written out
• a thermal screen 24 may be used in the simplest case of a ring, a triangle,
• the thickness of the domestic 24-hour screen must be between 0.1 and 0.15 of the external diameter in the country-
• ⁇ Gives of diameter in a thermal ecana 24 change 1, 5 ⁇ . or greater, and its thickness is less than ⁇ , ⁇ or. greater than 0.15 ⁇ , alignment of the temperature of the outside of the set 7 is not ensured.
• the proposed device for cultivating industrial bathtubs is a large number of industrial melting pots for industrial production.
• Ligature 5 by moving part 8 to the top, is installed in heater 3 to the uppermost position and after disconnecting 17 in unit 2, it is not used due to the use of aluminum
• the crucible 5 is placed in the lowermost position (not shown on the drawing) and in the heater 3 the flange 12 is mounted on the 24-in-receptacle 23.
• the burner After sealing the chamber and vacuuming it to 6.7 ” 10 Pa, the burner is ignited. The voltage is supplied to the heater 3 and the heat is released by the heater 3;
• chamber I is filled with inert gas, most often an argon, - 9 - under pressure ⁇ 9.81 * 10 to 10.79 * 10 Pa.
• ⁇ ⁇ igle 5 ⁇ as ⁇ lavlyae ⁇ sya is ⁇ dn ⁇ e sy ⁇ e and za ⁇ em ⁇ igel 5 'with ⁇ as ⁇ lav ⁇ m II ⁇ e ⁇ emeschae ⁇ sya in ⁇ aynee ve ⁇ nee ⁇ l ⁇ zhenie 5 d ⁇ first ⁇ n ⁇ a ⁇ a nizhneg ⁇ ⁇ tsa 13 ⁇ m ⁇ b ⁇ az ⁇ va ⁇ e- To 6 ⁇ as ⁇ lav ⁇ m II and further to ⁇ ab ⁇ chee ⁇ l ⁇ zhenie, ⁇ i ⁇ m ⁇ ass ⁇ yanie ⁇ ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ as ⁇ lava II in The crucible 5 is optionally 13 mm long and the component 6 is at least 20 mm. Having completed II on time 18, it leaves from Crucible 5 to zone 14 for installation.
• line 20 is deactivated to contact machine 22 with a step 13 of processor 6, and machine 22 is suspended.
• the 26th alloy 15 gauge is 0.2 0.2-0.3 mm.
• this multi-part 7 is expanded to a predetermined cross-section. Saving is carried out at a location of line 20 with a speed of 22 at a speed of 0.5 to I mm / min.
• step 13 of the manufacturer 6 20 section 26 If you open it at step 13 of the manufacturer 6 20 section 26, the city is turned into a closed ring. Then, the metal 7 is pulled out of the 14 installation zone by moving the 20-bar unit at a speed of up to 5 mm / min.
• the last one is turned off by a melting point 26, for example, by lowering the crucible 5. Then, the crucible is removed 7
• heater 3 After reaching a temperature of ⁇ 50 550 ° C to ⁇ 600 ° C, heater 3 is turned off and further cooling

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Crystallography & Structural Chemistry (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Physics & Mathematics (AREA)
• Geometry (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Glass Compositions (AREA)
• Inorganic Compounds Of Heavy Metals (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (1)

Family

ID=21268241

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Family Applications After (1)

Country Status (13)

Cited By (1)

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Citations (2)

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• 1986
  • 1986-11-26 SU SU864149059A patent/SU1592414A1/ru active
• 1987
  • 1987-10-13 IN IN797/CAL/87A patent/IN167160B/en unknown
  • 1987-10-23 WO PCT/SU1987/000118 patent/WO1988003968A1/ru not_active Application Discontinuation
  • 1987-10-23 US US07/241,988 patent/US4915773A/en not_active Expired - Fee Related
  • 1987-10-23 EP EP19880900260 patent/EP0290628B1/de not_active Expired - Lifetime
  • 1987-10-23 US US07/241,978 patent/US4957713A/en not_active Expired - Fee Related
  • 1987-10-23 EP EP88900261A patent/EP0290629B1/de not_active Expired - Lifetime
  • 1987-10-23 AU AU10581/88A patent/AU592921B2/en not_active Ceased
  • 1987-10-23 AU AU10582/88A patent/AU592922B2/en not_active Ceased
  • 1987-10-23 JP JP63500623A patent/JPH01501468A/ja active Pending
  • 1987-10-23 HU HU88341A patent/HU203134B/hu not_active IP Right Cessation
  • 1987-10-23 DE DE8888900260T patent/DE3776333D1/de not_active Expired - Fee Related
  • 1987-10-23 WO PCT/SU1987/000117 patent/WO1988003967A1/ru active IP Right Grant
  • 1987-10-23 JP JP88500622A patent/JPH01501467A/ja active Pending
  • 1987-10-23 HU HU88326A patent/HU203587B/hu not_active IP Right Cessation
  • 1987-10-23 AT AT88900261T patent/ATE71994T1/de active
  • 1987-10-23 AT AT88900260T patent/ATE71993T1/de active
  • 1987-10-28 BR BR8705753A patent/BR8705753A/pt unknown
  • 1987-11-24 BR BR8706332A patent/BR8706332A/pt unknown
  • 1987-11-25 CN CN87108014A patent/CN1010037B/zh not_active Expired
  • 1987-11-26 YU YU215187A patent/YU215187A/xx unknown
  • 1987-11-26 CN CN87108007A patent/CN1010036B/zh not_active Expired
  • 1987-11-27 IN IN933/CAL/87A patent/IN168216B/en unknown

Patent Citations (2)

Non-Patent Citations (2)

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