SG99975A1 - Reflection plate for semiconductor heat treatment and manufacturing method thereof - Google Patents

Reflection plate for semiconductor heat treatment and manufacturing method thereof

Info

Publication number
SG99975A1
SG99975A1 SG200301292A SG200301292A SG99975A1 SG 99975 A1 SG99975 A1 SG 99975A1 SG 200301292 A SG200301292 A SG 200301292A SG 200301292 A SG200301292 A SG 200301292A SG 99975 A1 SG99975 A1 SG 99975A1
Authority
SG
Singapore
Prior art keywords
manufacturing
heat treatment
reflection plate
semiconductor heat
semiconductor
Prior art date
Application number
SG200301292A
Other languages
English (en)
Inventor
Shimanuki Kazuhiko
Honma Hiroyuki
Saito Norihiko
Yokoyama Hideyuki
Saito Takanori
Nakao Ken
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG99975A1 publication Critical patent/SG99975A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Optical Elements Other Than Lenses (AREA)
SG200301292A 2002-03-29 2003-03-17 Reflection plate for semiconductor heat treatment and manufacturing method thereof SG99975A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002094545A JP3798721B2 (ja) 2002-03-29 2002-03-29 半導体熱処理用反射板およびこの半導体熱処理用反射板の製造方法

Publications (1)

Publication Number Publication Date
SG99975A1 true SG99975A1 (en) 2003-11-27

Family

ID=27800541

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301292A SG99975A1 (en) 2002-03-29 2003-03-17 Reflection plate for semiconductor heat treatment and manufacturing method thereof

Country Status (7)

Country Link
US (1) US7336892B2 (ko)
EP (1) EP1349200A3 (ko)
JP (1) JP3798721B2 (ko)
KR (1) KR100566742B1 (ko)
CN (1) CN1286155C (ko)
SG (1) SG99975A1 (ko)
TW (1) TWI251278B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098942A1 (ja) * 2004-04-05 2005-10-20 Mitsubishi Materials Corporation Ａi／ａiｎ接合体、パワーモジュール用基板及びパワーモジュール並びにａi／ａiｎ接合体の製造方法
KR100840532B1 (ko) * 2004-08-27 2008-06-23 토요 탄소 가부시키가이샤 팽창흑연시트
JP3691836B1 (ja) * 2004-08-27 2005-09-07 東洋炭素株式会社 膨張黒鉛シート
CN102608805B (zh) * 2012-03-14 2014-11-05 创维液晶器件(深圳)有限公司 反射片、液晶模组和液晶显示器
WO2014129331A1 (ja) * 2013-02-20 2014-08-28 株式会社美鈴工業 ヒータ装置
CN109599351A (zh) * 2013-03-22 2019-04-09 应用材料公司 反射性衬里
US11828656B2 (en) * 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171815A (ja) * 1982-04-01 1983-10-08 Toshiba Corp 溝付ヒ−タプレ−ト
WO1999002757A1 (en) * 1997-07-11 1999-01-21 Asm America, Inc. Reflective surface for cvd reactor walls
US5868850A (en) * 1995-06-15 1999-02-09 Toshiba Ceramics Co., Ltd. Vapor phase growth apparatus
JP2000150396A (ja) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk 熱放射リフレクター
US6087632A (en) * 1999-01-11 2000-07-11 Tokyo Electron Limited Heat processing device with hot plate and associated reflector
JP2002006125A (ja) * 2000-06-26 2002-01-09 Toshiba Ceramics Co Ltd 反射板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220826Y2 (ko) * 1985-02-15 1990-06-06
JP3164248B2 (ja) * 1992-06-11 2001-05-08 東京エレクトロン株式会社 熱処理装置
JPH06260430A (ja) * 1993-03-08 1994-09-16 Eiko:Kk プレートヒータ及びその製法
JP3694985B2 (ja) 1995-06-15 2005-09-14 東芝機械株式会社 気相成長装置
JP4185194B2 (ja) * 1997-07-31 2008-11-26 コバレントマテリアル株式会社 カーボンヒータ
TW452826B (en) * 1997-07-31 2001-09-01 Toshiba Ceramics Co Carbon heater

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171815A (ja) * 1982-04-01 1983-10-08 Toshiba Corp 溝付ヒ−タプレ−ト
US5868850A (en) * 1995-06-15 1999-02-09 Toshiba Ceramics Co., Ltd. Vapor phase growth apparatus
WO1999002757A1 (en) * 1997-07-11 1999-01-21 Asm America, Inc. Reflective surface for cvd reactor walls
JP2000150396A (ja) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk 熱放射リフレクター
US6087632A (en) * 1999-01-11 2000-07-11 Tokyo Electron Limited Heat processing device with hot plate and associated reflector
JP2002006125A (ja) * 2000-06-26 2002-01-09 Toshiba Ceramics Co Ltd 反射板

Also Published As

Publication number Publication date
JP3798721B2 (ja) 2006-07-19
EP1349200A2 (en) 2003-10-01
EP1349200A3 (en) 2009-01-07
CN1286155C (zh) 2006-11-22
KR20030078677A (ko) 2003-10-08
KR100566742B1 (ko) 2006-04-03
TWI251278B (en) 2006-03-11
US7336892B2 (en) 2008-02-26
CN1449000A (zh) 2003-10-15
TW200307330A (en) 2003-12-01
JP2003297770A (ja) 2003-10-17
US20030184696A1 (en) 2003-10-02

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