SG93273A1 - Phenolic/alicyclic copolymers and photoresists - Google Patents

Phenolic/alicyclic copolymers and photoresists

Info

Publication number
SG93273A1
SG93273A1 SG200005734A SG200005734A SG93273A1 SG 93273 A1 SG93273 A1 SG 93273A1 SG 200005734 A SG200005734 A SG 200005734A SG 200005734 A SG200005734 A SG 200005734A SG 93273 A1 SG93273 A1 SG 93273A1
Authority
SG
Singapore
Prior art keywords
photoresists
phenolic
alicyclic copolymers
alicyclic
copolymers
Prior art date
Application number
SG200005734A
Other languages
English (en)
Inventor
G Barclay George
Pandya Ashish
Yueh Wang
Zampini Anthony
Genghui Teng Gary
Mao Zhibiao
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Publication of SG93273A1 publication Critical patent/SG93273A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG200005734A 1999-10-08 2000-10-07 Phenolic/alicyclic copolymers and photoresists SG93273A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/414,738 US6492086B1 (en) 1999-10-08 1999-10-08 Phenolic/alicyclic copolymers and photoresists

Publications (1)

Publication Number Publication Date
SG93273A1 true SG93273A1 (en) 2002-12-17

Family

ID=23642742

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200005734A SG93273A1 (en) 1999-10-08 2000-10-07 Phenolic/alicyclic copolymers and photoresists

Country Status (7)

Country Link
US (2) US6492086B1 (fr)
EP (1) EP1091250A1 (fr)
JP (2) JP2001194792A (fr)
KR (1) KR20010040033A (fr)
CN (1) CN1170207C (fr)
SG (1) SG93273A1 (fr)
TW (1) TW573211B (fr)

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US6740464B2 (en) * 2000-01-14 2004-05-25 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor
US6777157B1 (en) * 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
TW538316B (en) * 2001-01-19 2003-06-21 Sumitomo Chemical Co Chemical amplifying type positive resist composition
TWI269118B (en) * 2001-03-05 2006-12-21 Sumitomo Chemical Co Chemical amplifying type positive resist composition
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
JP4595275B2 (ja) 2001-09-28 2010-12-08 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US7776505B2 (en) * 2001-11-05 2010-08-17 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US6723488B2 (en) * 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
KR20030055874A (ko) * 2001-12-27 2003-07-04 주식회사 켐써치 트리시클로데카닐 그룹을 갖는 에스테르 유도체를 이용한감광성 고분자 및 이를 이용한 포토레지스트 조성물
KR20040039731A (ko) 2002-11-04 2004-05-12 주식회사 동진쎄미켐 디사이클로헥실이 결합된 펜던트 기를 가지는 화학적으로증폭된 고분자와 그 제조방법, 및 이를 포함하는 레지스트조성물
JP4222850B2 (ja) 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
US8119392B2 (en) * 2003-05-02 2012-02-21 The University Of North Carolina At Charlotte Biocompatible resists
JP2007522262A (ja) * 2003-06-26 2007-08-09 シミックス・テクノロジーズ・インコーポレイテッド フォトレジストポリマー
WO2005003198A1 (fr) * 2003-06-26 2005-01-13 Jsr Corporation Compositions de polymeres photosensibles
WO2005003192A1 (fr) 2003-06-26 2005-01-13 Symyx Technologies, Inc. Synthese de polymeres photosensibles
JP4324433B2 (ja) 2003-09-17 2009-09-02 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI316645B (en) * 2003-09-18 2009-11-01 Tokyo Ohka Kogyo Co Ltd Positive resist composition and resist pattern formation method
US7488565B2 (en) 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4347110B2 (ja) * 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
US7198873B2 (en) * 2003-11-18 2007-04-03 Asml Netherlands B.V. Lithographic processing optimization based on hypersampled correlations
US7147986B2 (en) * 2004-03-31 2006-12-12 Intel Corporation Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages
JP4448767B2 (ja) * 2004-10-08 2010-04-14 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4580841B2 (ja) * 2005-08-16 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4533831B2 (ja) * 2005-09-29 2010-09-01 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI400571B (zh) 2006-03-14 2013-07-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
EP1835342A3 (fr) 2006-03-14 2008-06-04 FUJIFILM Corporation Composition de réserve positive et procédé de formation de motif l'utilisant
US7914968B2 (en) * 2006-07-24 2011-03-29 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
JP2008052107A (ja) 2006-08-25 2008-03-06 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4905786B2 (ja) 2007-02-14 2012-03-28 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
EP1967904A1 (fr) 2007-03-06 2008-09-10 FUJIFILM Corporation Composition de réserve positive et procédé de formation de motif l'utilisant
JP5039622B2 (ja) 2007-03-30 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP5141106B2 (ja) * 2007-06-22 2013-02-13 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びヒドロキシスチレン誘導体
JP4961324B2 (ja) 2007-10-26 2012-06-27 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4951464B2 (ja) 2007-10-26 2012-06-13 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法。
JP5150296B2 (ja) 2008-02-13 2013-02-20 富士フイルム株式会社 電子線、ｘ線またはｅｕｖ用ポジ型レジスト組成物及びこれを用いたパターン形成方法
KR20100131996A (ko) * 2008-03-04 2010-12-16 제이에스알 가부시끼가이샤 감방사선성 조성물, 중합체 및 단량체
WO2009152276A2 (fr) 2008-06-10 2009-12-17 University Of North Carolina At Charlotte Générateurs de photoacides et résists lithographiques les comprenant
JP5092986B2 (ja) * 2008-08-20 2012-12-05 Ｊｓｒ株式会社 重合体及び感放射線性組成物並びに単量体
TWI503334B (zh) * 2009-02-19 2015-10-11 Jsr Corp 聚合物及敏輻射線性組成物、及單體
JP5609881B2 (ja) 2009-09-30 2014-10-22 Jsr株式会社 重合体及び感放射線性組成物並びに単量体
WO2011070947A1 (fr) 2009-12-08 2011-06-16 Jsr株式会社 Composition de résine sensible au rayonnement, polymère, monomère et procédé permettant de produire une telle composition
JP2012136507A (ja) 2010-11-15 2012-07-19 Rohm & Haas Electronic Materials Llc 塩基反応性光酸発生剤およびこれを含むフォトレジスト
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614121A1 (fr) * 1993-03-05 1994-09-07 Morton International, Inc. Photoréserve sensible dans l'UV profond, résistant à la décomposition de l'image latente
DE4409220A1 (de) * 1993-05-12 1994-11-17 Fujitsu Ltd Musterbildungsmaterial und Musterbildungsverfahren
EP0663616A2 (fr) * 1993-12-28 1995-07-19 Fujitsu Limited Matériau sensible au rayonnement et méthode de formation d'un dessin
DE19626003A1 (de) * 1995-06-28 1997-01-02 Fujitsu Ltd Chemisch verstärkte Resist-Zusammensetzungen und Verfahren zur Herstellung von Resist-Mustern
US5700624A (en) * 1995-05-09 1997-12-23 Shipley Company, L.L.C. Positive acid catalyzed resists having an alkali soluble resin with acid labile groups and inert blocking groups

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JPH08137107A (ja) * 1994-11-10 1996-05-31 Nippon Zeon Co Ltd レジスト組成物
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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
EP0614121A1 (fr) * 1993-03-05 1994-09-07 Morton International, Inc. Photoréserve sensible dans l'UV profond, résistant à la décomposition de l'image latente
DE4409220A1 (de) * 1993-05-12 1994-11-17 Fujitsu Ltd Musterbildungsmaterial und Musterbildungsverfahren
EP0663616A2 (fr) * 1993-12-28 1995-07-19 Fujitsu Limited Matériau sensible au rayonnement et méthode de formation d'un dessin
US5700624A (en) * 1995-05-09 1997-12-23 Shipley Company, L.L.C. Positive acid catalyzed resists having an alkali soluble resin with acid labile groups and inert blocking groups
DE19626003A1 (de) * 1995-06-28 1997-01-02 Fujitsu Ltd Chemisch verstärkte Resist-Zusammensetzungen und Verfahren zur Herstellung von Resist-Mustern

Also Published As

Publication number Publication date
JP2011215647A (ja) 2011-10-27
JP2001194792A (ja) 2001-07-19
US6492086B1 (en) 2002-12-10
US7700256B2 (en) 2010-04-20
EP1091250A1 (fr) 2001-04-11
CN1170207C (zh) 2004-10-06
TW573211B (en) 2004-01-21
US20030207200A1 (en) 2003-11-06
KR20010040033A (ko) 2001-05-15
CN1297167A (zh) 2001-05-30

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