SG92688A1 - Layered capacitor device - Google Patents
Layered capacitor deviceInfo
- Publication number
- SG92688A1 SG92688A1 SG200001724A SG200001724A SG92688A1 SG 92688 A1 SG92688 A1 SG 92688A1 SG 200001724 A SG200001724 A SG 200001724A SG 200001724 A SG200001724 A SG 200001724A SG 92688 A1 SG92688 A1 SG 92688A1
- Authority
- SG
- Singapore
- Prior art keywords
- capacitor device
- layered capacitor
- realised
- layers
- tracks
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 5
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000012777 electrically insulating material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Capacitors (AREA)
- Microwave Amplifiers (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Insulated Conductors (AREA)
- Combinations Of Printed Boards (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99400876A EP1043740B1 (de) | 1999-04-09 | 1999-04-09 | Schichtförmige Kondensatorvorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
SG92688A1 true SG92688A1 (en) | 2002-11-19 |
Family
ID=8241941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200001724A SG92688A1 (en) | 1999-04-09 | 2000-03-22 | Layered capacitor device |
Country Status (11)
Country | Link |
---|---|
US (1) | US6178083B1 (de) |
EP (1) | EP1043740B1 (de) |
JP (1) | JP2000315625A (de) |
KR (1) | KR20010014709A (de) |
AT (1) | ATE337606T1 (de) |
AU (1) | AU2069000A (de) |
CA (1) | CA2300704A1 (de) |
DE (1) | DE69932917D1 (de) |
IL (1) | IL134960A0 (de) |
SG (1) | SG92688A1 (de) |
TW (1) | TW548775B (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822312B2 (en) * | 2000-04-07 | 2004-11-23 | Koninklijke Philips Electronics N.V. | Interdigitated multilayer capacitor structure for deep sub-micron CMOS |
KR100902503B1 (ko) * | 2002-08-12 | 2009-06-15 | 삼성전자주식회사 | 다층 수직 구조를 갖는 고용량 커패시터 |
US6819543B2 (en) * | 2002-12-31 | 2004-11-16 | Intel Corporation | Multilayer capacitor with multiple plates per layer |
US7154734B2 (en) * | 2004-09-20 | 2006-12-26 | Lsi Logic Corporation | Fully shielded capacitor cell structure |
JP2006228828A (ja) * | 2005-02-15 | 2006-08-31 | Seiko Npc Corp | キャパシタを有する半導体装置 |
TWI269321B (en) * | 2005-07-27 | 2006-12-21 | Ind Tech Res Inst | Symmetrical capacitor |
US7561407B1 (en) * | 2005-11-28 | 2009-07-14 | Altera Corporation | Multi-segment capacitor |
US7161228B1 (en) | 2005-12-28 | 2007-01-09 | Analog Devices, Inc. | Three-dimensional integrated capacitance structure |
US7511939B2 (en) * | 2006-08-24 | 2009-03-31 | Analog Devices, Inc. | Layered capacitor architecture and fabrication method |
KR100775107B1 (ko) * | 2006-11-23 | 2007-11-08 | 삼성전자주식회사 | 커패시터 구조물 및 이의 제조 방법 |
US8027144B2 (en) | 2009-04-28 | 2011-09-27 | United Microelectronics Corp. | Capacitor structure |
US8014124B2 (en) * | 2009-06-03 | 2011-09-06 | Mediatek Inc. | Three-terminal metal-oxide-metal capacitor |
JP2016162904A (ja) * | 2015-03-03 | 2016-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208725A (en) * | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
EP0905792A2 (de) * | 1997-09-30 | 1999-03-31 | Hewlett-Packard Company | Kondensatoren für integrierte Schaltungen mit gestapelten Streifen |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2507379A1 (fr) * | 1981-06-05 | 1982-12-10 | Europ Composants Electron | Bloc de condensateurs en serie et multiplicateur de tension utilisant un tel bloc de condensateurs |
JPS6484616A (en) * | 1987-09-28 | 1989-03-29 | Toshiba Corp | Condenser |
JPH04171804A (ja) * | 1990-11-05 | 1992-06-19 | Murata Mfg Co Ltd | 電気二重層コンデンサ |
JPH07283076A (ja) * | 1994-04-15 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | キャパシタ |
WO1997043774A1 (en) * | 1996-05-15 | 1997-11-20 | Hyperion Catalysis International, Inc. | Graphitic nanofibers in electrochemical capacitors |
US5745335A (en) * | 1996-06-27 | 1998-04-28 | Gennum Corporation | Multi-layer film capacitor structures and method |
TW297948B (en) | 1996-08-16 | 1997-02-11 | United Microelectronics Corp | Memory cell structure of DRAM |
-
1999
- 1999-04-09 DE DE69932917T patent/DE69932917D1/de not_active Expired - Lifetime
- 1999-04-09 AT AT99400876T patent/ATE337606T1/de not_active IP Right Cessation
- 1999-04-09 EP EP99400876A patent/EP1043740B1/de not_active Expired - Lifetime
-
2000
- 2000-03-06 AU AU20690/00A patent/AU2069000A/en not_active Abandoned
- 2000-03-08 IL IL13496000A patent/IL134960A0/xx unknown
- 2000-03-15 CA CA002300704A patent/CA2300704A1/en not_active Abandoned
- 2000-03-22 SG SG200001724A patent/SG92688A1/en unknown
- 2000-03-23 JP JP2000081186A patent/JP2000315625A/ja active Pending
- 2000-04-07 US US09/544,477 patent/US6178083B1/en not_active Expired - Lifetime
- 2000-04-08 KR KR1020000018478A patent/KR20010014709A/ko not_active Application Discontinuation
- 2000-04-17 TW TW089107181A patent/TW548775B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208725A (en) * | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
EP0905792A2 (de) * | 1997-09-30 | 1999-03-31 | Hewlett-Packard Company | Kondensatoren für integrierte Schaltungen mit gestapelten Streifen |
Also Published As
Publication number | Publication date |
---|---|
TW548775B (en) | 2003-08-21 |
AU2069000A (en) | 2000-10-12 |
EP1043740B1 (de) | 2006-08-23 |
ATE337606T1 (de) | 2006-09-15 |
JP2000315625A (ja) | 2000-11-14 |
EP1043740A1 (de) | 2000-10-11 |
US6178083B1 (en) | 2001-01-23 |
IL134960A0 (en) | 2001-05-20 |
CA2300704A1 (en) | 2000-10-09 |
DE69932917D1 (de) | 2006-10-05 |
KR20010014709A (ko) | 2001-02-26 |
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