IL134960A0 - Layered capacitor device - Google Patents

Layered capacitor device

Info

Publication number
IL134960A0
IL134960A0 IL13496000A IL13496000A IL134960A0 IL 134960 A0 IL134960 A0 IL 134960A0 IL 13496000 A IL13496000 A IL 13496000A IL 13496000 A IL13496000 A IL 13496000A IL 134960 A0 IL134960 A0 IL 134960A0
Authority
IL
Israel
Prior art keywords
capacitor device
layered capacitor
realised
layers
tracks
Prior art date
Application number
IL13496000A
Other languages
English (en)
Original Assignee
Cit Alcatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cit Alcatel filed Critical Cit Alcatel
Publication of IL134960A0 publication Critical patent/IL134960A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Insulated Conductors (AREA)
  • Combinations Of Printed Boards (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
IL13496000A 1999-04-09 2000-03-08 Layered capacitor device IL134960A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99400876A EP1043740B1 (en) 1999-04-09 1999-04-09 Layered capacitor device

Publications (1)

Publication Number Publication Date
IL134960A0 true IL134960A0 (en) 2001-05-20

Family

ID=8241941

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13496000A IL134960A0 (en) 1999-04-09 2000-03-08 Layered capacitor device

Country Status (11)

Country Link
US (1) US6178083B1 (xx)
EP (1) EP1043740B1 (xx)
JP (1) JP2000315625A (xx)
KR (1) KR20010014709A (xx)
AT (1) ATE337606T1 (xx)
AU (1) AU2069000A (xx)
CA (1) CA2300704A1 (xx)
DE (1) DE69932917D1 (xx)
IL (1) IL134960A0 (xx)
SG (1) SG92688A1 (xx)
TW (1) TW548775B (xx)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822312B2 (en) 2000-04-07 2004-11-23 Koninklijke Philips Electronics N.V. Interdigitated multilayer capacitor structure for deep sub-micron CMOS
KR100902503B1 (ko) * 2002-08-12 2009-06-15 삼성전자주식회사 다층 수직 구조를 갖는 고용량 커패시터
US6819543B2 (en) * 2002-12-31 2004-11-16 Intel Corporation Multilayer capacitor with multiple plates per layer
US7154734B2 (en) * 2004-09-20 2006-12-26 Lsi Logic Corporation Fully shielded capacitor cell structure
JP2006228828A (ja) * 2005-02-15 2006-08-31 Seiko Npc Corp キャパシタを有する半導体装置
TWI269321B (en) * 2005-07-27 2006-12-21 Ind Tech Res Inst Symmetrical capacitor
US7561407B1 (en) * 2005-11-28 2009-07-14 Altera Corporation Multi-segment capacitor
US7161228B1 (en) 2005-12-28 2007-01-09 Analog Devices, Inc. Three-dimensional integrated capacitance structure
US7511939B2 (en) * 2006-08-24 2009-03-31 Analog Devices, Inc. Layered capacitor architecture and fabrication method
KR100775107B1 (ko) * 2006-11-23 2007-11-08 삼성전자주식회사 커패시터 구조물 및 이의 제조 방법
US8027144B2 (en) * 2009-04-28 2011-09-27 United Microelectronics Corp. Capacitor structure
US8014124B2 (en) * 2009-06-03 2011-09-06 Mediatek Inc. Three-terminal metal-oxide-metal capacitor
JP2016162904A (ja) * 2015-03-03 2016-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US11659705B2 (en) * 2021-05-21 2023-05-23 Micron Technology, Inc. Thin film transistor deck selection in a memory device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507379A1 (fr) * 1981-06-05 1982-12-10 Europ Composants Electron Bloc de condensateurs en serie et multiplicateur de tension utilisant un tel bloc de condensateurs
JPS6484616A (en) * 1987-09-28 1989-03-29 Toshiba Corp Condenser
JPH04171804A (ja) * 1990-11-05 1992-06-19 Murata Mfg Co Ltd 電気二重層コンデンサ
US5208725A (en) * 1992-08-19 1993-05-04 Akcasu Osman E High capacitance structure in a semiconductor device
JPH07283076A (ja) * 1994-04-15 1995-10-27 Nippon Telegr & Teleph Corp <Ntt> キャパシタ
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
RU98120524A (ru) * 1996-05-15 2000-10-10 Хайперион Каталайзис Интернэшнл Графитовые нановолокна в электрохимических конденсаторах
US5745335A (en) * 1996-06-27 1998-04-28 Gennum Corporation Multi-layer film capacitor structures and method
TW297948B (en) 1996-08-16 1997-02-11 United Microelectronics Corp Memory cell structure of DRAM
US5978206A (en) * 1997-09-30 1999-11-02 Hewlett-Packard Company Stacked-fringe integrated circuit capacitors

Also Published As

Publication number Publication date
DE69932917D1 (de) 2006-10-05
ATE337606T1 (de) 2006-09-15
AU2069000A (en) 2000-10-12
EP1043740B1 (en) 2006-08-23
US6178083B1 (en) 2001-01-23
CA2300704A1 (en) 2000-10-09
KR20010014709A (ko) 2001-02-26
SG92688A1 (en) 2002-11-19
JP2000315625A (ja) 2000-11-14
EP1043740A1 (en) 2000-10-11
TW548775B (en) 2003-08-21

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