SG89359A1 - Projection electron-beam lithography masks using advanced materials and membrane size - Google Patents
Projection electron-beam lithography masks using advanced materials and membrane sizeInfo
- Publication number
- SG89359A1 SG89359A1 SG200006572A SG200006572A SG89359A1 SG 89359 A1 SG89359 A1 SG 89359A1 SG 200006572 A SG200006572 A SG 200006572A SG 200006572 A SG200006572 A SG 200006572A SG 89359 A1 SG89359 A1 SG 89359A1
- Authority
- SG
- Singapore
- Prior art keywords
- beam lithography
- advanced materials
- lithography masks
- projection electron
- membrane size
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
- H01J2237/31794—Problems associated with lithography affecting masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/455,570 US6261726B1 (en) | 1999-12-06 | 1999-12-06 | Projection electron-beam lithography masks using advanced materials and membrane size |
Publications (1)
Publication Number | Publication Date |
---|---|
SG89359A1 true SG89359A1 (en) | 2002-06-18 |
Family
ID=23809373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200006572A SG89359A1 (en) | 1999-12-06 | 2000-11-13 | Projection electron-beam lithography masks using advanced materials and membrane size |
Country Status (5)
Country | Link |
---|---|
US (1) | US6261726B1 (ja) |
JP (1) | JP3470963B2 (ja) |
KR (1) | KR100426249B1 (ja) |
SG (1) | SG89359A1 (ja) |
TW (1) | TW457543B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000206675A (ja) * | 1999-01-12 | 2000-07-28 | Nikon Corp | 転写マスク用ブランクスおよび転写マスク |
JP3339477B2 (ja) * | 1999-10-04 | 2002-10-28 | 日本電気株式会社 | ステンシルマスク及びステンシルマスクの形成方法 |
US6576529B1 (en) * | 1999-12-07 | 2003-06-10 | Agere Systems Inc. | Method of forming an alignment feature in or on a multilayered semiconductor structure |
JP4434440B2 (ja) * | 2000-06-19 | 2010-03-17 | Necエレクトロニクス株式会社 | 電子線露光用マスクの検査方法および電子線露光方法 |
US6555297B1 (en) * | 2000-07-25 | 2003-04-29 | International Business Machines Corporation | Etch stop barrier for stencil mask fabrication |
US6855467B2 (en) * | 2000-09-05 | 2005-02-15 | Hoya Corporation | Transfer mask, method of dividing pattern or transfer mask, and method of manufacturing transfer mask |
US6528215B1 (en) * | 2000-11-07 | 2003-03-04 | International Business Machines Corporation | Substrate for diamond stencil mask and method for forming |
JP2002226290A (ja) * | 2000-11-29 | 2002-08-14 | Japan Fine Ceramics Center | ダイヤモンド加工体の製造方法、及び、ダイヤモンド加工体 |
US6749968B2 (en) | 2001-08-09 | 2004-06-15 | Freescale Semiconductor, Inc. | Method for fabricating a thin-membrane stencil mask and method for making a semiconductor device using the same |
US20040119163A1 (en) * | 2002-12-23 | 2004-06-24 | Lawrence Wong | Method of making semiconductor devices using carbon nitride, a low-dielectric-constant hard mask and/or etch stop |
KR100555503B1 (ko) * | 2003-06-27 | 2006-03-03 | 삼성전자주식회사 | 메인 스트럿과 보조 스트럿을 가지는 스텐실 마스크 및 그제조 방법 |
JP2005340835A (ja) * | 2004-05-28 | 2005-12-08 | Hoya Corp | 電子線露光用マスクブランクおよびマスク |
US6974772B1 (en) * | 2004-08-19 | 2005-12-13 | Intel Corporation | Integrated low-k hard mask |
WO2008010959A2 (en) * | 2006-07-14 | 2008-01-24 | The Trustees Of The University Of Pennsylvania | Beam ablation lithography |
US7863563B2 (en) * | 2007-03-08 | 2011-01-04 | International Business Machines Corporation | Carbon tube for electron beam application |
WO2016171754A1 (en) * | 2015-04-21 | 2016-10-27 | Intel Corporation | Fine alignment system for electron beam exposure system |
US10418243B2 (en) | 2015-10-09 | 2019-09-17 | Applied Materials, Inc. | Ultra-high modulus and etch selectivity boron-carbon hardmask films |
JP7096031B2 (ja) * | 2017-06-26 | 2022-07-05 | 日本特殊陶業株式会社 | 基板保持部材 |
CN113740034B (zh) * | 2021-08-19 | 2024-04-30 | 中国科学院合肥物质科学研究院 | 基于光学干涉的薄膜均匀性检测系统 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4260670A (en) | 1979-07-12 | 1981-04-07 | Western Electric Company, Inc. | X-ray mask |
US4436797A (en) | 1982-06-30 | 1984-03-13 | International Business Machines Corporation | X-Ray mask |
JP3171590B2 (ja) | 1990-08-28 | 2001-05-28 | 住友電気工業株式会社 | X線マスクとその製造方法 |
JP3071876B2 (ja) | 1991-01-08 | 2000-07-31 | 株式会社東芝 | X線マスク、その製造方法、及びこれを用いた露光方法 |
JPH0562888A (ja) | 1991-08-30 | 1993-03-12 | Fujitsu Ltd | X線マスクおよびそれを用いたパターン転写方法 |
JPH0562889A (ja) | 1991-09-04 | 1993-03-12 | Seiko Epson Corp | エツクス線露光マスク |
US5260151A (en) | 1991-12-30 | 1993-11-09 | At&T Bell Laboratories | Device manufacture involving step-and-scan delineation |
US5674413A (en) | 1993-12-23 | 1997-10-07 | International Business Machines Corporation | Scattering reticle for electron beam systems |
JPH0934103A (ja) | 1995-05-17 | 1997-02-07 | Nikon Corp | 荷電粒子線転写用マスク |
JPH0992616A (ja) | 1995-07-18 | 1997-04-04 | Canon Inc | メンブレン及びマスク、これを用いた露光装置やデバイス生産方法 |
JPH10106943A (ja) * | 1996-06-04 | 1998-04-24 | Nikon Corp | マスク用基板の製造方法 |
US5781607A (en) | 1996-10-16 | 1998-07-14 | Ibm Corporation | Membrane mask structure, fabrication and use |
JPH10135103A (ja) | 1996-10-25 | 1998-05-22 | Nikon Corp | 荷電粒子線転写用マスクまたはx線転写用マスクの製造方法 |
JPH10199802A (ja) | 1997-01-13 | 1998-07-31 | Mitsubishi Materials Corp | 照射x線によるメンブレンの経時的位置ずれの発生が少ないx線リソグラフィー用マスク |
JPH10198024A (ja) | 1997-01-13 | 1998-07-31 | Mitsubishi Materials Corp | 照射x線によるメンブレンの経時的位置ずれの発生が少ないx線リソグラフィー用マスク |
JPH10208999A (ja) * | 1997-01-17 | 1998-08-07 | Hitachi Ltd | 露光方法および露光装置 |
US5942760A (en) | 1997-11-03 | 1999-08-24 | Motorola Inc. | Method of forming a semiconductor device utilizing scalpel mask, and mask therefor |
US5899728A (en) | 1997-12-22 | 1999-05-04 | Motorola, Inc. | Method of forming a lithographic mask |
JPH11219899A (ja) * | 1998-01-30 | 1999-08-10 | Hoya Corp | X線マスクブランク及びその製造方法並びにx線マスクの製造方法 |
US6140020A (en) * | 1998-11-30 | 2000-10-31 | Motorola, Inc. | Method for manufacturing a semiconductor wafer using a mask that has several regions with different scattering ability |
-
1999
- 1999-12-06 US US09/455,570 patent/US6261726B1/en not_active Expired - Fee Related
-
2000
- 2000-07-04 TW TW089113223A patent/TW457543B/zh not_active IP Right Cessation
- 2000-11-13 SG SG200006572A patent/SG89359A1/en unknown
- 2000-12-01 KR KR10-2000-0072242A patent/KR100426249B1/ko not_active IP Right Cessation
- 2000-12-05 JP JP2000370287A patent/JP3470963B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100426249B1 (ko) | 2004-04-08 |
JP2001189271A (ja) | 2001-07-10 |
US6261726B1 (en) | 2001-07-17 |
JP3470963B2 (ja) | 2003-11-25 |
TW457543B (en) | 2001-10-01 |
KR20010062033A (ko) | 2001-07-07 |
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