SG74115A1 - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- SG74115A1 SG74115A1 SG1999000100A SG1999000100A SG74115A1 SG 74115 A1 SG74115 A1 SG 74115A1 SG 1999000100 A SG1999000100 A SG 1999000100A SG 1999000100 A SG1999000100 A SG 1999000100A SG 74115 A1 SG74115 A1 SG 74115A1
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Junction Field-Effect Transistors (AREA)
- Led Devices (AREA)
- Element Separation (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1544698A JPH11214800A (ja) | 1998-01-28 | 1998-01-28 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG74115A1 true SG74115A1 (en) | 2000-07-18 |
Family
ID=11889045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1999000100A SG74115A1 (en) | 1998-01-28 | 1999-01-15 | Semiconductor device and its manufacturing method |
Country Status (6)
Country | Link |
---|---|
US (2) | US6111273A (ko) |
EP (1) | EP0945899A3 (ko) |
JP (1) | JPH11214800A (ko) |
KR (1) | KR100563165B1 (ko) |
MY (1) | MY120791A (ko) |
SG (1) | SG74115A1 (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000277860A (ja) * | 1999-03-24 | 2000-10-06 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
JP3459599B2 (ja) | 1999-09-24 | 2003-10-20 | 三洋電機株式会社 | 半導体発光素子 |
JP3671807B2 (ja) * | 2000-03-22 | 2005-07-13 | 日亜化学工業株式会社 | レーザ素子 |
JP2002184581A (ja) | 2000-12-13 | 2002-06-28 | Sanyo Electric Co Ltd | 有機発光素子 |
WO2003061021A2 (en) * | 2001-12-21 | 2003-07-24 | Regents Of The University Of California, The Office Of Technology Transfer | Implantation for current confinement in nitride-based vertical optoelectronics |
JPWO2003075425A1 (ja) * | 2002-03-01 | 2005-06-30 | 三洋電機株式会社 | 窒化物系半導体レーザ素子 |
KR100499128B1 (ko) * | 2002-07-19 | 2005-07-04 | 삼성전기주식회사 | 전류제한층이 형성된 반도체 레이저 다이오드 및 그제조방법 |
DE10261676A1 (de) * | 2002-12-31 | 2004-07-22 | Osram Opto Semiconductors Gmbh | Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht |
JP4826052B2 (ja) * | 2003-02-04 | 2011-11-30 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP5122817B2 (ja) * | 2003-05-09 | 2013-01-16 | クリー インコーポレイテッド | イオン・インプラント・アイソレーションによるled製作 |
US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
US8120139B2 (en) * | 2003-12-05 | 2012-02-21 | International Rectifier Corporation | Void isolated III-nitride device |
US20050145851A1 (en) * | 2003-12-17 | 2005-07-07 | Nitronex Corporation | Gallium nitride material structures including isolation regions and methods |
US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
US7250313B2 (en) * | 2004-09-30 | 2007-07-31 | Solid State Measurements, Inc. | Method of detecting un-annealed ion implants |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
US8183595B2 (en) * | 2005-07-29 | 2012-05-22 | International Rectifier Corporation | Normally off III-nitride semiconductor device having a programmable gate |
JP5004072B2 (ja) * | 2006-05-17 | 2012-08-22 | 学校法人慶應義塾 | イオン照射効果評価方法、プロセスシミュレータ及びデバイスシミュレータ |
CN103219375A (zh) | 2006-11-20 | 2013-07-24 | 松下电器产业株式会社 | 半导体装置 |
KR20080046097A (ko) * | 2006-11-21 | 2008-05-26 | 삼성코닝정밀유리 주식회사 | 화합물 반도체 기판 및 그 전기적 특성 제어 방법 |
JP5242068B2 (ja) * | 2007-03-23 | 2013-07-24 | 古河電気工業株式会社 | GaN系半導体デバイスおよびその製造方法 |
US20110037101A1 (en) * | 2008-06-05 | 2011-02-17 | Kazushi Nakazawa | Semiconductor device |
US8927999B2 (en) * | 2011-11-21 | 2015-01-06 | Avogy, Inc. | Edge termination by ion implantation in GaN |
CN104170089B (zh) * | 2012-02-28 | 2017-05-31 | 皇家飞利浦有限公司 | 用于ac led的硅衬底上的氮化镓led与氮化铝镓/氮化镓器件的集成 |
JP2013239735A (ja) * | 2013-07-29 | 2013-11-28 | Panasonic Corp | 電界効果トランジスタ |
CN105097509B (zh) * | 2014-05-06 | 2017-10-03 | 稳懋半导体股份有限公司 | 高电子迁移率电晶体植入硼隔离结构的制作方法 |
WO2018013713A2 (en) * | 2016-07-13 | 2018-01-18 | University Of Centeral Florida Research Foundation, Inc. | Semiconductor devices with depleted heterojunction current blocking regions |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1486265A (en) * | 1973-10-17 | 1977-09-21 | Hitachi Ltd | Method for producing an amorphous state of a solid material |
JP2553723B2 (ja) * | 1989-12-25 | 1996-11-13 | 三菱電機株式会社 | 化合物半導体集積回路装置 |
US5279976A (en) | 1991-05-03 | 1994-01-18 | Motorola, Inc. | Method for fabricating a semiconductor device having a shallow doped region |
KR100194822B1 (ko) | 1991-08-31 | 1999-06-15 | 브뤼노 위리아뜨 | 회전하는 외부밴드로 구성되는 원형의 장신구 및 그 제조방법 |
JPH06342811A (ja) * | 1993-06-01 | 1994-12-13 | Nec Corp | 電界効果型トランジスタ及びその製造方法 |
JPH08330439A (ja) | 1995-05-31 | 1996-12-13 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US5929467A (en) * | 1996-12-04 | 1999-07-27 | Sony Corporation | Field effect transistor with nitride compound |
-
1998
- 1998-01-28 JP JP1544698A patent/JPH11214800A/ja active Pending
-
1999
- 1999-01-15 SG SG1999000100A patent/SG74115A1/en unknown
- 1999-01-15 MY MYPI99000142A patent/MY120791A/en unknown
- 1999-01-21 US US09/233,909 patent/US6111273A/en not_active Expired - Lifetime
- 1999-01-27 KR KR1019990002637A patent/KR100563165B1/ko not_active IP Right Cessation
- 1999-01-27 EP EP99101460A patent/EP0945899A3/en not_active Withdrawn
-
2000
- 2000-06-06 US US09/588,410 patent/US6235617B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0945899A3 (en) | 2002-03-20 |
US6235617B1 (en) | 2001-05-22 |
JPH11214800A (ja) | 1999-08-06 |
US6111273A (en) | 2000-08-29 |
MY120791A (en) | 2005-11-30 |
EP0945899A2 (en) | 1999-09-29 |
KR19990068168A (ko) | 1999-08-25 |
KR100563165B1 (ko) | 2006-03-22 |
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