SG69992A1 - Igbt with integrated control - Google Patents
Igbt with integrated controlInfo
- Publication number
- SG69992A1 SG69992A1 SG1996011347A SG1996011347A SG69992A1 SG 69992 A1 SG69992 A1 SG 69992A1 SG 1996011347 A SG1996011347 A SG 1996011347A SG 1996011347 A SG1996011347 A SG 1996011347A SG 69992 A1 SG69992 A1 SG 69992A1
- Authority
- SG
- Singapore
- Prior art keywords
- igbt
- integrated control
- integrated
- control
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/560,328 US5798538A (en) | 1995-11-17 | 1995-11-17 | IGBT with integrated control |
Publications (1)
Publication Number | Publication Date |
---|---|
SG69992A1 true SG69992A1 (en) | 2000-01-25 |
Family
ID=24237327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996011347A SG69992A1 (en) | 1995-11-17 | 1996-11-18 | Igbt with integrated control |
Country Status (9)
Country | Link |
---|---|
US (1) | US5798538A (ja) |
JP (1) | JP3302275B2 (ja) |
KR (1) | KR100300673B1 (ja) |
DE (1) | DE19647398B4 (ja) |
FR (1) | FR2741999A1 (ja) |
GB (1) | GB2307343B (ja) |
IT (1) | IT1298690B1 (ja) |
SG (1) | SG69992A1 (ja) |
TW (1) | TW308723B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6184585B1 (en) * | 1997-11-13 | 2001-02-06 | International Rectifier Corp. | Co-packaged MOS-gated device and control integrated circuit |
US6448587B1 (en) * | 1997-11-28 | 2002-09-10 | Hitachi, Ltd. | Circuit incorporated IGBT and power conversion device using the same |
US6069372A (en) * | 1998-01-22 | 2000-05-30 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate type semiconductor device with potential detection gate for overvoltage protection |
JP4431761B2 (ja) * | 1998-01-27 | 2010-03-17 | 富士電機システムズ株式会社 | Mos型半導体装置 |
JP3707942B2 (ja) * | 1998-12-17 | 2005-10-19 | 三菱電機株式会社 | 半導体装置とそれを用いた半導体回路 |
JP4023035B2 (ja) * | 1999-07-02 | 2007-12-19 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
EP1355063A1 (en) * | 2001-01-24 | 2003-10-22 | Hitachi, Ltd. | Ignition device of internal combustion engine |
US20060290689A1 (en) * | 2005-06-24 | 2006-12-28 | William Grant | Semiconductor half-bridge module with low inductance |
JP5332175B2 (ja) * | 2007-10-24 | 2013-11-06 | 富士電機株式会社 | 制御回路を備える半導体装置 |
JP5609087B2 (ja) * | 2009-12-04 | 2014-10-22 | 富士電機株式会社 | 内燃機関点火装置用半導体装置 |
CN105103284B (zh) | 2013-09-11 | 2017-11-14 | 富士电机株式会社 | 半导体装置 |
US10438947B2 (en) | 2015-01-13 | 2019-10-08 | Mitsubishi Electric Corporation | Semiconductor device, manufacturing method therefor and semiconductor module |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618255B2 (ja) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
JPH0821678B2 (ja) * | 1987-05-29 | 1996-03-04 | 日産自動車株式会社 | 半導体装置 |
US5156989A (en) * | 1988-11-08 | 1992-10-20 | Siliconix, Incorporated | Complementary, isolated DMOS IC technology |
JP2858404B2 (ja) * | 1990-06-08 | 1999-02-17 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
JP2973588B2 (ja) * | 1991-06-10 | 1999-11-08 | 富士電機株式会社 | Mos型半導体装置 |
JPH05152574A (ja) * | 1991-11-29 | 1993-06-18 | Fuji Electric Co Ltd | 半導体装置 |
JPH05283617A (ja) * | 1992-03-31 | 1993-10-29 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
US5430314A (en) * | 1992-04-23 | 1995-07-04 | Siliconix Incorporated | Power device with buffered gate shield region |
DE4429903B4 (de) * | 1993-09-14 | 2004-02-05 | International Rectifier Corp., El Segundo | Leistungshalbleiteranordnung mit Überlastschutzschaltung |
JP3135762B2 (ja) * | 1993-10-29 | 2001-02-19 | 株式会社東芝 | 半導体集積回路装置 |
JP3156487B2 (ja) * | 1994-03-04 | 2001-04-16 | 富士電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP3183020B2 (ja) * | 1994-03-17 | 2001-07-03 | 株式会社日立製作所 | 保護回路を内蔵した絶縁ゲート型半導体装置 |
US5550701A (en) * | 1994-08-30 | 1996-08-27 | International Rectifier Corporation | Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode |
GB9423423D0 (en) * | 1994-11-14 | 1995-01-11 | Fuji Electric Co Ltd | Semiconductor device |
-
1995
- 1995-11-17 US US08/560,328 patent/US5798538A/en not_active Expired - Lifetime
-
1996
- 1996-11-15 FR FR9613950A patent/FR2741999A1/fr active Pending
- 1996-11-15 IT IT96MI002384A patent/IT1298690B1/it active IP Right Grant
- 1996-11-15 DE DE19647398A patent/DE19647398B4/de not_active Expired - Lifetime
- 1996-11-15 GB GB9623879A patent/GB2307343B/en not_active Expired - Fee Related
- 1996-11-15 TW TW085114025A patent/TW308723B/zh active
- 1996-11-16 KR KR1019960054686A patent/KR100300673B1/ko not_active IP Right Cessation
- 1996-11-18 JP JP30629096A patent/JP3302275B2/ja not_active Expired - Lifetime
- 1996-11-18 SG SG1996011347A patent/SG69992A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB2307343B (en) | 2000-11-15 |
JP3302275B2 (ja) | 2002-07-15 |
IT1298690B1 (it) | 2000-01-12 |
DE19647398B4 (de) | 2006-03-16 |
ITMI962384A0 (it) | 1996-11-15 |
KR100300673B1 (ko) | 2001-11-22 |
GB9623879D0 (en) | 1997-01-08 |
US5798538A (en) | 1998-08-25 |
DE19647398A1 (de) | 1997-06-12 |
GB2307343A (en) | 1997-05-21 |
JPH09181315A (ja) | 1997-07-11 |
KR970030879A (ko) | 1997-06-26 |
ITMI962384A1 (it) | 1998-05-15 |
TW308723B (ja) | 1997-06-21 |
FR2741999A1 (fr) | 1997-06-06 |
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