GB9423423D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB9423423D0
GB9423423D0 GB9423423A GB9423423A GB9423423D0 GB 9423423 D0 GB9423423 D0 GB 9423423D0 GB 9423423 A GB9423423 A GB 9423423A GB 9423423 A GB9423423 A GB 9423423A GB 9423423 D0 GB9423423 D0 GB 9423423D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB9423423A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to GB9423423A priority Critical patent/GB9423423D0/en
Publication of GB9423423D0 publication Critical patent/GB9423423D0/en
Priority to JP7284856A priority patent/JPH08213617A/en
Priority to GB9523207A priority patent/GB2295052B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB9423423A 1994-11-14 1994-11-14 Semiconductor device Pending GB9423423D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9423423A GB9423423D0 (en) 1994-11-14 1994-11-14 Semiconductor device
JP7284856A JPH08213617A (en) 1994-11-14 1995-11-01 Semiconductor device and its driving method
GB9523207A GB2295052B (en) 1994-11-14 1995-11-13 Integrated bipolar and field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9423423A GB9423423D0 (en) 1994-11-14 1994-11-14 Semiconductor device

Publications (1)

Publication Number Publication Date
GB9423423D0 true GB9423423D0 (en) 1995-01-11

Family

ID=10764708

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9423423A Pending GB9423423D0 (en) 1994-11-14 1994-11-14 Semiconductor device
GB9523207A Expired - Fee Related GB2295052B (en) 1994-11-14 1995-11-13 Integrated bipolar and field effect transistors

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9523207A Expired - Fee Related GB2295052B (en) 1994-11-14 1995-11-13 Integrated bipolar and field effect transistors

Country Status (2)

Country Link
JP (1) JPH08213617A (en)
GB (2) GB9423423D0 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798538A (en) * 1995-11-17 1998-08-25 International Rectifier Corporation IGBT with integrated control
CN1223004C (en) * 1998-07-23 2005-10-12 三菱电机株式会社 Semiconductor device and manufacture thereof
US6133591A (en) * 1998-07-24 2000-10-17 Philips Electronics North America Corporation Silicon-on-insulator (SOI) hybrid transistor device structure
US6429077B1 (en) * 1999-12-02 2002-08-06 United Microelectronics Corp. Method of forming a lateral diffused metal-oxide semiconductor transistor
DE10023956A1 (en) * 2000-05-16 2001-11-22 Bosch Gmbh Robert Power semiconductor component with reduced surface field (RESURF) region between HV and LV sides
JP2007318062A (en) * 2006-04-27 2007-12-06 Matsushita Electric Ind Co Ltd High withstand voltage semiconductor switching device
US7605446B2 (en) 2006-07-14 2009-10-20 Cambridge Semiconductor Limited Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation
WO2010057340A1 (en) * 2008-11-19 2010-05-27 深圳市联德合微电子有限公司 Integrated circuit utilizing ligbt output stage
JP5284077B2 (en) * 2008-12-26 2013-09-11 株式会社日立製作所 Semiconductor device and power conversion device using the same
DE102011002857A1 (en) * 2011-01-19 2012-07-19 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Semiconductor device with a BiLDMOS or SOI-BiLDMOS transistor, and cascode circuit
KR101867953B1 (en) 2011-12-22 2018-06-18 삼성전자주식회사 Semiconductor devices and methods for forming the same
CN102593127B (en) * 2012-02-27 2014-04-09 电子科技大学 Composite power semiconductor device
CN104916674B (en) * 2015-04-17 2017-10-31 东南大学 A kind of intensifying current type landscape insulation bar double-pole-type transistor
CN107564814B (en) * 2016-06-30 2020-11-10 株洲中车时代半导体有限公司 Method for manufacturing power semiconductor
CN107564952B (en) * 2016-06-30 2021-06-22 株洲中车时代半导体有限公司 Power semiconductor

Also Published As

Publication number Publication date
GB2295052B (en) 1998-07-15
GB2295052A (en) 1996-05-15
GB9523207D0 (en) 1996-01-17
JPH08213617A (en) 1996-08-20

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