CN104916674B - A kind of intensifying current type landscape insulation bar double-pole-type transistor - Google Patents
A kind of intensifying current type landscape insulation bar double-pole-type transistor Download PDFInfo
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- CN104916674B CN104916674B CN201510181744.2A CN201510181744A CN104916674B CN 104916674 B CN104916674 B CN 104916674B CN 201510181744 A CN201510181744 A CN 201510181744A CN 104916674 B CN104916674 B CN 104916674B
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- 238000009413 insulation Methods 0.000 title claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims abstract description 12
- 230000003139 buffering effect Effects 0.000 claims abstract description 10
- 235000019994 cava Nutrition 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000036039 immunity Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011513 prestressed concrete Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
A kind of intensifying current type landscape insulation bar double-pole-type transistor, on the premise of maintaining breech lock ability constant, improves current density and shut-off speed.The semiconductor possesses：It is provided with P type substrate and buries oxygen, oxygen is buried provided with N-type drift region, it which is provided with PXing Ti areas and N-type buffering area, p-type collector area is provided with N-type buffering area, p-type is connected with anode metal on collector area, field oxygen layer is provided with the top of N-type drift region, P type trap zone is provided with PXing Ti areas, p-type emitter region and emitter region are provided with P type trap zone, the inboard boundary in above-mentioned 4 region synchronously caves in form square groove, emitter region is defined as the first p-type emitter region successively around groove, 2nd 34 N-type emitter region, 5th p-type emitter region, N-type drift region evagination is simultaneously full of square groove, p-type body surface is provided with gate oxide, polysilicon layer is provided with gate oxide surface, grid metal is connected with the polysilicon layer.
Description
Technical field
It is a kind of intensifying current type landscape insulation bar double-pole-type the invention mainly relates to power semiconductor device technology field
Transistor, is particularly suitable for use in high pressure three-phase single-chip inverter integrated circuit, for driving DC brushless motor.
Background technology
Insulated gate bipolar transistor IGBT is that mos gate device architecture is combined evolution with bipolar transistor structure and formed
Compound power device, the characteristics of being provided simultaneously with metal-oxide-semiconductor and bipolar transistor, with good on state current and switch damage
Tradeoff between consumption.Silicon-on-insulator lateral insulated gate bipolar transistor (SOI-Lateral Insulated Gate
Bipolar Transistor, SOI-LIGBT) it is a kind of typical device based on SOI technology, with being easily integrated, pressure-resistant
It is high, the advantages of current drive capability is strong, switching speed is fast, be widely applied in power integrated circuit.
Because SOI-LIGBT is used as the power switch pipe in power integrated circuit, its power attenuation determines whole system
Loss, power attenuation include conduction loss and turn-off power loss, in order to reduce SOI-LIGBT conduction loss, must just improve
The conducting current density of device；In order to reduce SOI-LIGBT turn-off power loss, the turn-off speed of device must be just improved.In order to
Improve device conducting current density, be currently suggested some devices, such as many raceway groove LIGBT, three-dimensional raceway groove LIGBT and
E2LIGBT.But while these devices improve conducting current density, the problem of some are new can be brought again, for many raceway grooves
LIGBT, the carrier quantity for turning off preceding drift region storage is more, and empties passage without special holoe carrier, adds
The turn-off time of device, the technology of other raising conducting current densities also brings along the resistance to drops of device or latch-up immunity declines
The problems such as.Pressure-resistant decline, reduces the maximum operating voltage of device, make device with being restricted；Turn-off time increases,
The switching loss of device is caused to be significantly increased；Latch-up can make gate signal lose the control to device, and device architecture may be through
Go through destructive failure, the decline of breech lock rejection ability so that the reliability reduction of device.
Therefore, SOI- is improved on the basis of the breech lock rejection ability that is pressure-resistant, not reducing SOI-LIGBT of retainer member
LIGBT conducting current density and reduction turn-off time are SOI-LIGBT main development directions, and power integrated circuit is set
Meter tool is of great significance.
The content of the invention
The present invention is in view of the above-mentioned problems, propose a kind of intensifying current type landscape insulation bar double-pole-type transistor.The structure
Retainer member it is pressure-resistant, suppress on the premise of breech lock ability do not reduce, the current density of device to be significantly improved, while also improving
The shut-off speed of device.
A kind of intensifying current type landscape insulation bar double-pole-type transistor, including：P type substrate, is provided with P type substrate and buries
Oxygen, N-type drift region is provided with oxygen is buried, PXing Ti areas and N-type buffering area are respectively equipped with the both sides of N-type drift region, slow in N-type
Rush in area to be provided with the p-type collector area of heavy doping, the p-type collector area of heavy doping and be connected with anode metal, in N-type drift region
Top be provided with field oxygen layer, a lateral boundaries of the field oxygen layer fall above N-type buffering area, another lateral boundaries and PXing Ti areas phase
Connect and for straight boundary, P type trap zone is provided with PXing Ti areas, the p-type emitter region provided with heavy doping and transmitting in P type trap zone
Polar region, cathodic metal is connected with the p-type emitter region and emitter region of heavy doping, it is characterised in that the PXing Ti areas, p-type
The inboard boundary of well region, the p-type emitter region of heavy doping and emitter region synchronously caves in form a square groove, emitter region
The cave in bottom of square groove is defined as the 3rd N-type emitter region, and the both sides of the square groove that caves in of emitter region are defined respectively
For the second N-type emitter region and the 4th N-type emitter region, the both sides summit with the square groove that caves in of emitter region is connected respectively
Emitter region part be respectively defined as the first p-type emitter region and the 5th p-type emitter region, the N-type drift region evagination is simultaneously
Full of square groove, the p-type body surface beyond P type trap zone is provided with gate oxide, and the gate oxide extends to field oxygen layer
And the border of an oxygen layer is terminated in, polysilicon layer is provided with gate oxide surface and the polysilicon layer extends to the upper of an oxygen layer
Side, is connected with grid metal on the polysilicon layer.
Described intensifying current type landscape insulation bar double-pole-type transistor, it is characterised in that the first p-type emitter region, the 5th
P-type emitter region can be changed into N-type heavy doping entirely.
Described intensifying current type landscape insulation bar double-pole-type transistor, it is characterised in that the first p-type emitter region, second
N-type emitter region, the 3rd N-type emitter region, the 4th N-type emitter region, the 5th p-type emitter region length range be 0.5um ~
100um。
Compared with prior art, the invention has the advantages that：
The invention provides a kind of intensifying current type landscape insulation bar double-pole-type transistor, in PXing Ti areas, P type trap zone, again
After the p-type emitter region of doping and the inboard boundary of emitter region synchronously cave in, the emitter region of U-shaped is formd, compared to biography
The single-groove road LIGBT of system, considerably increases equivalent channel length.When device is opened, the efficiency that electronics injects from channel region
It is substantially improved, so that drift region carrier concentration is raised；So when drain terminal PN junction is opened, will promote more holes from
Drain terminal injects, and forms stronger conductivity modulation effect, greatly improves the conducting electric current ability of device.
For traditional devices, holoe carrier is must be by N-type emitter region, into source；And first, the of the present invention
Five emitter regions are p-type heavy doping, and holoe carrier is then to enter source, p-type transmitting by the first, the 5th p-type emitter region
Polar region absorbs substantial amounts of holoe carrier in itself, on the one hand inhibits the unlatching of parasitic NPN transistor, improves the anti-door bolt of device
Lock characteristic；On the other hand the turn-off speed of device is improved, turn-off power loss is reduced.
At the same time, the length ratio of the first, second, third, fourth, the 5th emitter region is adjustable, the first p-type emitter stage
Area and the 5th p-type emitter region also can all be substituted for N-type heavily doped region, so in actual applications can be more flexible,
Compromised between increase conducting current density and raising latch-up immunity.
Therefore device of the present invention can not only significantly improve the conducting current density of device, and improve the shut-off speed of device
Degree, improves the breech lock rejection ability of device.
Brief description of the drawings
Fig. 1 show the device profile structure chart of common landscape insulation bar double-pole-type transistor.
Fig. 2 show the structure three-dimensional figure of U-shaped channel laterally insulated gate bipolar transistor of the present invention.
Fig. 3 show structure of the present invention and removes the graphics after metal electrode and half polysilicon.
Fig. 4 show structure of the present invention remove after metal electrode and grid oxide layer graphics.
Fig. 5 show structure of the present invention and removes the top view after metal electrode and field oxygen layer.
Fig. 6 show structure of the present invention and removes metal electrode and field oxygen layer post tensioned unbonded prestressed concrete plus the top view of malleation.
Fig. 7, which show structure of the present invention and removes the first, the 5th p-type emitter region after metal electrode and field oxygen layer, is changed to full N
The top view of type doping.
Fig. 8, which show structure of the present invention and removed, to be changed the 3rd N-type emitter region length after metal electrode and field oxygen layer and bows
View.
Fig. 9 show structure of the present invention and removes second, four N-type emitter region length of change after metal electrode and field oxygen layer
Top view.
Figure 10 show structure of the present invention and removes the first, the 5th p-type emitter stage head of district of change after metal electrode and field oxygen layer
The top view of degree.
Figure 11 show structure of the present invention second, third, the 4th N-type launch site different length when conducting current density
Figure.
Conducting current density and breech lock voltage when Figure 12 show the first p-type of structure launch site different length of the present invention
Figure.
Figure 13 show the I-V curve comparison diagram of structure of the present invention and traditional structure.
Figure 14 show structure of the present invention and the breech lock voltage ratio of traditional structure is relatively schemed.
Figure 15 show structure of the present invention and is compared figure with the turn-off time of traditional structure.
Figure 16 show structure of the present invention and is compared figure with the pressure-resistant of traditional structure.
Embodiment
With reference to Fig. 2, Fig. 3, the present invention is elaborated, a kind of intensifying current type landscape insulation bar double-pole-type crystal
Pipe, including：P type substrate 1, provided with oxygen 2 is buried in P type substrate 1, is provided with N-type drift region 3, in N-type drift region 3 on oxygen 2 is buried
Both sides are respectively equipped with PXing Ti areas 4 and N-type buffering area 9, and the p-type collector area 8 of heavy doping is provided with N-type buffering area 9, heavily doped
Anode metal 10 is connected with miscellaneous p-type collector area 8, field oxygen layer 16, the field oxygen layer are provided with the top of N-type drift region 3
16 lateral boundaries fall in the top of N-type buffering area 9, and another lateral boundaries connect with PXing Ti areas 4 and are straight boundary, in PXing Ti areas 4
It is interior to be provided with P type trap zone 5, the p-type emitter region 6 and emitter region 7 of heavy doping are provided with P type trap zone 5, in the p-type of heavy doping
Emitter region 6 and emitter region 7 are connected with cathodic metal 11, it is characterised in that the PXing Ti areas 4, P type trap zone 5, heavy doping
P-type emitter region 6 and the inboard boundary of emitter region 7 synchronously cave in form a square groove 17, the width of emitter region 7 is
Definite value, the distance of inboard boundary to the inboard boundary of P type trap zone 5 in PXing Ti areas 4 is definite value, and caving in for emitter region 7 is square recessed
The bottom of groove 17 is defined as the 3rd N-type emitter region 7c, and the both sides of the square groove 17 that caves in of emitter region 7 are respectively defined as
Two N-type emitter region 7b and the 4th N-type emitter region 7d, respectively with the both sides summit of the square groove 17 that caves in of emitter region 7
The emitter region part of connection is respectively defined as the first p-type emitter region 7a and the 5th p-type emitter region 7e, the transmitting of the first p-type
Polar region 7a and the 5th p-type emitter region 7e length are identical, and the evagination of N-type drift region 3 is simultaneously full of square groove 17, in p-type
The surface of PXing Ti areas 4 beyond well region 5 is provided with gate oxide 13, and the gate oxide 13 extends to field oxygen layer 16 and terminates in an oxygen
The border of layer 16, polysilicon layer 15 is provided with the surface of gate oxide 13 and the polysilicon layer 15 extends to the upper of an oxygen layer 16
Side, is connected with grid metal 14 on polysilicon layer 15.
Described intensifying current type landscape insulation bar double-pole-type transistor, it is characterised in that the first p-type emitter region 7a,
Five p-type emitter region 7e can be changed into N-type heavy doping entirely.
Described intensifying current type landscape insulation bar double-pole-type transistor, it is characterised in that the first p-type emitter region 7a,
Two N-type emitter region 7b, the 3rd N-type emitter region 7c, the 4th N-type emitter region 7d, the 5th p-type emitter region 7e length ranges
It is 0.5um ~ 100um.
The present invention is further described below in conjunction with the accompanying drawings.
The operation principle of the present invention：
The gate electrode of device adds malleation, such as Fig. 6, and a N-type launch site for connecting heavy doping and N is formed below in grid
The raceway groove of type drift region.When colelctor electrode adds malleation, electronic current is sent to N-type drift region from N-type launch site.Through the electricity of raceway groove
Quantum count is related to the length of raceway groove, and raceway groove is longer, and electron amount is more.The device is compared to traditional device
Speech, equivalent channel length is longer, and the efficiency that electronics injects from channel region is substantially improved.Electronic current is used as PNP transistor
Ideal base drive current, promotes hole to inject N-type drift region from the p-type collecting zone of heavy doping, injected holes forms PNP crystal
The emitter current of pipe.The device compares traditional devices, because the relation of electronic current increase, ideal base drive current increase,
More hole injection N-type drift regions can be attracted, the emitter current of PNP transistor is increased.From colelctor electrode to emitter stage
Electric current is made up of two parts, including the patch portion by MOSFET region raceway groove and the bipolar portion for flowing through PNP pipe, the device
This two-part electric current is set all to increase, the total current of device is substantially increased.When electric current flows through N-type drift region, it is in big injection
State, because the device current is bigger than traditional devices electric current, the carrier concentration of N-type drift region is higher, conductivity modulation effect
Also it is stronger, greatly improve the conducting electric current ability of device.
Alternately it is made up of 4 layers of N-type and p type island region domain in LIGBT structures, this generates parasitic IGCT.When LIGBT electric currents
It is too big, make IGCT NPN's partially ON, then parasitic thyristor latch, now electric current continues to increase in device, and gate signal will
Uncontrollable LIGBT shut-off, makes LIGBT structures undergo destructive failure.Increase the conducting current density of device, device will be
Lower voltage enters latch mode, reduces the reliability of device.For the device, hole is flowed into from colelctor electrode passes through N
Type drift region, flow to emitter stage, and the first, the 5th p-type emitter region, and hole is directly absorbed, reduced under N-type emitter region
The hole current that side is flowed through, so as to inhibit the unlatching of parasitic NPN transistor, improves the latch-up immunity of device.
When device is in the conduction state, N-type drift region, which is in big injection state, N-type drift region, substantial amounts of non-equilibrium
Carrier, when gate signal plus zero potential, raceway groove shut-off, PXing Ti areas are passed through in the superfluous hole in part in N-type drift region, by the
First, the 5th p-type emitter region absorbs, and the first, the 5th p-type emitter region provides volume for non-equilibrium hole in device to emitter stage
Outer path, accelerates the speed of device shut-off, so as to reduce the shut-off power consumption of device.
N-type heavy doping can all be become for the first p-type emitter region, the 5th p-type emitter region of the device, such as
Fig. 7, now the conducting current density of device will reach maximum, but the latching feature of device can also degenerate.
For the first p-type emitter region of the device, the second N-type emitter region, the 3rd N-type emitter region, the 4th N-type
Length difference between emitter region, the 5th p-type emitter region is adjustable, and adjustable scope is 0.5um ~ 100um.Second N-type
Emitter region, the 3rd N-type emitter region, the 4th N-type emitter region define 17 regions in a JFET region, Fig. 5, JEFT areas
Generate extra resistance RJEFT, but in general, drift resistance is main（Rdrain>>RJEFT）, JEFT areas resistance can
To ignore.When changing each interval emitter region length, the shape in JEFT regions is also changed, and the resistance in JEFT areas is also just sent out
Changing.When the length reduction of the 3rd N-type emitter region, such as Fig. 8, RJEFTIt will increase, the length of the 3rd N-type emitter region is small to be arrived
When to a certain degree, RJEFTIt will be unable to ignore, now total conducting resistance increase, conducting current density reduces, therefore to ensure the
The length of three N-type emitter regions can not be too small.
And when changing the second N-type emitter region and the 4th N-type emitter region length, such as Fig. 9, the second N-type emitter region
Length it is longer, equivalent channel length is longer, and the injection efficiency of electronics is also higher, conducting current density increase.But the second N-type
Emitter region is bigger, and the resistance in JEFT areas is also bigger, when the length of the second N-type emitter region is too big, RJEFTIt will be unable to ignore,
Increase total conducting resistance, conducting current density reduces, therefore the length of the second N-type emitter region has certain limitations, it is impossible to
Unrestricted increase.
And when changing the first p-type emitter region and the 5th p-type emitter region length, such as Figure 10, the first p-type emitter region
Length it is longer, the hole absorption ability in the first p-type emitter region emitter stage p type island region domain also strengthens, the latch-up immunity of device
Rise, turn-off speed lifting；But the length of the first p-type emitter region increases, the contraction in length of specific equivalent raceway groove is now sent out
The electron injection efficiency of emitter-base bandgap grading can also be reduced, and the conducting current density of device is also reduced.
Therefore device of the present invention significantly improves the current density of device on the basis of retainer member is pressure-resistant, reduces device
Turn-off time, also improve the breech lock rejection ability of device.
In order to verify benefit of the invention, this patent is by semiconductor devices simulation software SentaurusTcad to structure
Contrast simulation is carried out, as shown in Figure 11 ~ Figure 16.In figure, WPCFor the length of the first, the 5th p-type emitter region, WOCFor second,
The length of 4th N-type emitter region, WPEFor the length of the 3rd N-type emitter region.Figure 11 is second, third N-type of structure of the present invention
Current density figure during the different length of launch site, as seen from the figure when the length reduction of the 3rd N-type emitter region, RJEFTIt will increase,
The length of 3rd N-type emitter region it is small to a certain extent when, RJEFTIt will be unable to ignore, now total conducting resistance increase, conducting
Current density reduces, therefore to ensure that the length of the 3rd N-type emitter region can not be too small；When the length of the 3rd N-type emitter region
When oversize, the ratio of the two or four N-type emitter region length reduces, and the equivalent channel length of unit sizes reduces, electron injection effect
Rate reduces, and conducting current density reduces, therefore the length of the 3rd N-type emitter region can not be oversize.When the second N-type emitter stage of increase
When area and the 4th N-type emitter region length, the length of the second N-type emitter region is longer, and equivalent channel length is longer, the note of electronics
Enter efficiency also higher, conducting current density increase.But the second N-type emitter region is bigger, and the resistance in JEFT areas is also bigger, when
The length of second N-type emitter region is too big, RJEFTIt will be unable to ignore, increase total conducting resistance, conducting current density reduces,
Therefore the length of the second N-type emitter region has certain limitations, it is impossible to unrestricted increase.Figure 12 sends out for the p-type of structure first of the present invention
Conducting current density and breech lock voltage pattern when penetrating area's different length, as seen from the figure the first p-type emitter region length increase, device
Current density reduce, the increase of breech lock voltage, in practical application, can adjusting device according to demand structure.Figure 13 is this hair
The I-V curve comparison diagram of bright structure and traditional structure, the conducting electric current ability of structure of the present invention is stronger than traditional structure as seen from the figure.
Figure 14 is the breech lock voltage ratio relatively figure of structure of the present invention and traditional structure, and the breech lock voltage of structure devices of the present invention is more as seen from the figure
Greatly, it is stronger to the rejection ability of latch-up.Figure 15 show structure of the present invention and is compared figure with the turn-off time of traditional structure, by
The turn-off time for scheming visible structure of the present invention is shorter, and the turn-off power loss of device is lower.Figure 16 is structure of the present invention and traditional devices
It is pressure-resistant compare figure, structure of the present invention is pressure-resistant identical with traditional devices as seen from the figure, improve device current density, and
In the case of the breech lock rejection ability for improving device, the pressure-resistant of device does not lose.
In summary, thus the basis that can not degenerated in pressure-resistant, the breech lock rejection ability of retainer member of device of the present invention
Upper raising SOI-LIGBT conducting current density and shut-off speed.
Claims (2)
1. a kind of intensifying current type landscape insulation bar double-pole-type transistor, including：P type substrate（1）, in P type substrate（1）It is provided with
Bury oxygen（2）, burying oxygen（2）It is provided with N-type drift region（3）, in N-type drift region（3）Both sides be respectively equipped with PXing Ti areas（4）And N
Type buffering area（9）, in N-type buffering area（9）The interior p-type collector area provided with heavy doping（8）, the p-type collector area of heavy doping（8）
On be connected with anode metal（10）, in N-type drift region（3）Top be provided with field oxygen layer（16）, the field oxygen layer（16）Side
Border falls in N-type buffering area（9）Top, another lateral boundaries and PXing Ti areas（4）Connect and for straight boundary, in PXing Ti areas（4）
It is interior to be provided with P type trap zone（5）, in P type trap zone（5）The interior p-type emitter region provided with heavy doping（6）And emitter region（7）, heavily doped
Miscellaneous p-type emitter region（6）And emitter region（7）It is connected with cathodic metal（11）, it is characterised in that the PXing Ti areas（4）、P
Type well region（5）, heavy doping p-type emitter region（6）And emitter region（7）Inboard boundary synchronously cave in form a square groove
（17）, emitter region（7）The square groove that caves in（17）Bottom be defined as the 3rd N-type emitter region（7c）, emitter region（7）
The square groove that caves in（17）Both sides be respectively defined as the second N-type emitter region（7b）With the 4th N intervals emitter region（7d）,
Respectively with emitter region（7）The square groove that caves in（17）Both sides summit connection emitter region part be respectively defined as first
P-type emitter region（7a）With the 5th p-type emitter region（7e）, the N-type drift region（3）Evagination is simultaneously full of square groove（17）,
In P type trap zone（5）PXing Ti areas in addition（4）Surface is provided with gate oxide（13）, the gate oxide（13）To field oxygen layer（16）
Extend and terminate in an oxygen layer（16）Border, in gate oxide（13）Surface is provided with polysilicon layer（15）And the polysilicon layer
（15）Extend to an oxygen layer（16）Top, in polysilicon layer（15）On be connected with grid metal（14）.
2. intensifying current type landscape insulation bar double-pole-type transistor according to claim 1, it is characterised in that the first p-type is sent out
Emitter region（7a）, the second N-type emitter region（7b）, the 3rd N-type emitter region（7c）, the 4th N intervals emitter region（7d）, the 5th
P-type emitter region（7e）Length range be 0.5um ~ 100um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN110729345B (en) * | 2019-09-29 | 2023-08-04 | 东南大学 | Trench gate type silicon-on-insulator lateral insulated gate bipolar transistor device |
| CN115411100A (en) * | 2021-05-28 | 2022-11-29 | 无锡华润上华科技有限公司 | Lateral insulated gate bipolar transistor |
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