SG66410A1 - Single and double gate field effect transistors with sidewall source-drain contacts - Google Patents

Single and double gate field effect transistors with sidewall source-drain contacts

Info

Publication number
SG66410A1
SG66410A1 SG1997004059A SG1997004059A SG66410A1 SG 66410 A1 SG66410 A1 SG 66410A1 SG 1997004059 A SG1997004059 A SG 1997004059A SG 1997004059 A SG1997004059 A SG 1997004059A SG 66410 A1 SG66410 A1 SG 66410A1
Authority
SG
Singapore
Prior art keywords
field effect
effect transistors
gate field
double gate
drain contacts
Prior art date
Application number
SG1997004059A
Other languages
English (en)
Inventor
Paul Michael Solomon
Hon-Sum Philip Wong
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG66410A1 publication Critical patent/SG66410A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
SG1997004059A 1996-12-17 1997-11-14 Single and double gate field effect transistors with sidewall source-drain contacts SG66410A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/767,916 US5773331A (en) 1996-12-17 1996-12-17 Method for making single and double gate field effect transistors with sidewall source-drain contacts

Publications (1)

Publication Number Publication Date
SG66410A1 true SG66410A1 (en) 1999-07-20

Family

ID=25080961

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997004059A SG66410A1 (en) 1996-12-17 1997-11-14 Single and double gate field effect transistors with sidewall source-drain contacts

Country Status (5)

Country Link
US (1) US5773331A (ko)
JP (1) JP3282143B2 (ko)
KR (1) KR100288667B1 (ko)
SG (1) SG66410A1 (ko)
TW (1) TW372357B (ko)

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Also Published As

Publication number Publication date
JPH10178180A (ja) 1998-06-30
KR100288667B1 (ko) 2001-12-12
JP3282143B2 (ja) 2002-05-13
US5773331A (en) 1998-06-30
TW372357B (en) 1999-10-21
KR19980063491A (ko) 1998-10-07

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