SG64454A1 - Geometrical control of device corner threshold - Google Patents

Geometrical control of device corner threshold

Info

Publication number
SG64454A1
SG64454A1 SG1997003836A SG1997003836A SG64454A1 SG 64454 A1 SG64454 A1 SG 64454A1 SG 1997003836 A SG1997003836 A SG 1997003836A SG 1997003836 A SG1997003836 A SG 1997003836A SG 64454 A1 SG64454 A1 SG 64454A1
Authority
SG
Singapore
Prior art keywords
device corner
corner threshold
geometrical control
geometrical
control
Prior art date
Application number
SG1997003836A
Other languages
English (en)
Inventor
Wayne S Berry
Juergen Faul
Wilfried Haensch
Rick L Mohler
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG64454A1 publication Critical patent/SG64454A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
SG1997003836A 1996-11-22 1997-10-22 Geometrical control of device corner threshold SG64454A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/753,234 US5858866A (en) 1996-11-22 1996-11-22 Geometrical control of device corner threshold

Publications (1)

Publication Number Publication Date
SG64454A1 true SG64454A1 (en) 1999-04-27

Family

ID=25029754

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003836A SG64454A1 (en) 1996-11-22 1997-10-22 Geometrical control of device corner threshold

Country Status (7)

Country Link
US (3) US5858866A (ja)
JP (1) JP3160237B2 (ja)
KR (1) KR100295727B1 (ja)
CN (1) CN1087503C (ja)
MY (1) MY122084A (ja)
SG (1) SG64454A1 (ja)
TW (1) TW385538B (ja)

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US7105899B2 (en) * 2002-01-17 2006-09-12 Micron Technology, Inc. Transistor structure having reduced transistor leakage attributes
US6806163B2 (en) * 2002-07-05 2004-10-19 Taiwan Semiconductor Manufacturing Co., Ltd Ion implant method for topographic feature corner rounding
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US7736394B2 (en) * 2002-08-22 2010-06-15 Victhom Human Bionics Inc. Actuated prosthesis for amputees
US6855606B2 (en) * 2003-02-20 2005-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-rod devices
US7074656B2 (en) * 2003-04-29 2006-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Doping of semiconductor fin devices
US7005330B2 (en) * 2003-06-27 2006-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for forming the gate electrode in a multiple-gate transistor
US6828248B1 (en) 2003-08-08 2004-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of pull back for forming shallow trench isolation
US20050147247A1 (en) * 2003-11-14 2005-07-07 Westberg Thomas E. Interactive television systems having POD modules and methods for use in the same
US20100153997A1 (en) * 2004-01-21 2010-06-17 United Video Properties, Inc. Interactive television system with templates for managing vendor-specific video-on-demand content
US7452778B2 (en) * 2004-06-10 2008-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-wire devices and methods of fabrication
KR100615570B1 (ko) * 2004-07-05 2006-08-25 삼성전자주식회사 둥근 활성코너를 갖는 리세스 채널 모스 트랜지스터의제조방법
DE102005037566B4 (de) * 2005-08-09 2008-04-24 Qimonda Ag Herstellungsverfahren für eine Halbleiterstruktur und entsprechende Halbleiterstruktur
US20070231870A1 (en) * 2006-03-31 2007-10-04 Fundacion Instituto De Estudios Avanzados (Idea) Process for the upgrading of heavy crude oil, extra-heavy crude oil or bitumens through the addition of a biocatalyst
US20070245019A1 (en) * 2006-04-12 2007-10-18 United Video Properties, Inc. Interactive media content delivery using a backchannel communications network
US20080272437A1 (en) * 2007-05-01 2008-11-06 Doris Bruce B Threshold Adjustment for High-K Gate Dielectric CMOS
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US8601526B2 (en) * 2008-06-13 2013-12-03 United Video Properties, Inc. Systems and methods for displaying media content and media guidance information
US8117564B2 (en) * 2009-04-10 2012-02-14 United Video Properties, Inc. Systems and methods for generating a media guidance application with multiple perspective views
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US20110016492A1 (en) * 2009-07-16 2011-01-20 Gemstar Development Corporation Systems and methods for forwarding media asset events
US20110072452A1 (en) * 2009-09-23 2011-03-24 Rovi Technologies Corporation Systems and methods for providing automatic parental control activation when a restricted user is detected within range of a device
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US9253262B2 (en) 2013-01-24 2016-02-02 Rovi Guides, Inc. Systems and methods for connecting media devices through web sockets
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Also Published As

Publication number Publication date
TW385538B (en) 2000-03-21
JP3160237B2 (ja) 2001-04-25
KR19980041904A (ko) 1998-08-17
MY122084A (en) 2006-03-31
US6022796A (en) 2000-02-08
US5858866A (en) 1999-01-12
CN1183649A (zh) 1998-06-03
CN1087503C (zh) 2002-07-10
US5998852A (en) 1999-12-07
KR100295727B1 (ko) 2001-08-07
JPH10290009A (ja) 1998-10-27

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