SG55369A1 - Inorganic filler epoxy resin composition and semiconductor device - Google Patents

Inorganic filler epoxy resin composition and semiconductor device

Info

Publication number
SG55369A1
SG55369A1 SG1997003167A SG1997003167A SG55369A1 SG 55369 A1 SG55369 A1 SG 55369A1 SG 1997003167 A SG1997003167 A SG 1997003167A SG 1997003167 A SG1997003167 A SG 1997003167A SG 55369 A1 SG55369 A1 SG 55369A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
resin composition
epoxy resin
inorganic filler
filler epoxy
Prior art date
Application number
SG1997003167A
Other languages
English (en)
Inventor
Horiaki Higuchi
Takaaki Fukumoto
Toshio Shiobara
Eiichi Asano
Kazutoshi Tomiyoshi
Original Assignee
Mitsubishi Electric Corp
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Shinetsu Chemical Co filed Critical Mitsubishi Electric Corp
Publication of SG55369A1 publication Critical patent/SG55369A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C08K7/18—Solid spheres inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C09C1/3009—Physical treatment, e.g. grinding; treatment with ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/04—Physical treatment, e.g. grinding, treatment with ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG1997003167A 1996-08-29 1997-08-29 Inorganic filler epoxy resin composition and semiconductor device SG55369A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24702596A JP3611066B2 (ja) 1996-08-29 1996-08-29 無機質充填剤及びエポキシ樹脂組成物の製造方法

Publications (1)

Publication Number Publication Date
SG55369A1 true SG55369A1 (en) 1998-12-21

Family

ID=17157294

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003167A SG55369A1 (en) 1996-08-29 1997-08-29 Inorganic filler epoxy resin composition and semiconductor device

Country Status (9)

Country Link
US (2) US5935314A (ja)
EP (1) EP0829455B1 (ja)
JP (1) JP3611066B2 (ja)
KR (1) KR100255340B1 (ja)
CN (1) CN1080746C (ja)
DE (1) DE69727869T2 (ja)
MY (2) MY124820A (ja)
SG (1) SG55369A1 (ja)
TW (1) TW495530B (ja)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69913298T2 (de) 1998-06-09 2004-05-27 Nitto Denko Corp., Ibaraki Epoxydharzzusammensetzung für die versieglung von halbleitern und damit ausgerüstete halbleitervorrichtung
JP3334864B2 (ja) 1998-11-19 2002-10-15 松下電器産業株式会社 電子装置
WO2000050512A1 (en) * 1999-02-25 2000-08-31 Nitto Denko Corporation Resin composition for semiconductor encapsulation, semiconductor device obtained with the same, and process for producing semiconductor device
US6201055B1 (en) * 1999-03-11 2001-03-13 Dow Corning Corporation Silicone composition and silicone pressure sensitive adhesive
JP3417354B2 (ja) 1999-08-19 2003-06-16 ソニーケミカル株式会社 接着材料及び回路接続方法
US6500891B1 (en) 2000-05-19 2002-12-31 Loctite Corporation Low viscosity thermally conductive compositions containing spherical thermally conductive particles
JP2001329145A (ja) * 2000-05-22 2001-11-27 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂成形材料及び半導体装置
JP4438973B2 (ja) * 2000-05-23 2010-03-24 アムコア テクノロジー，インコーポレイテッド シート状樹脂組成物及びそれを用いた半導体装置の製造方法
US6737467B1 (en) * 2000-11-21 2004-05-18 E. I. Du Pont De Nemours And Company Low gloss powder coatings
DE10137666A1 (de) * 2001-08-01 2003-02-27 Infineon Technologies Ag Schutzvorrichtung für Baugruppen und Verfahren zu ihrer Herstellung
JP2005527113A (ja) * 2002-05-23 2005-09-08 スリーエム イノベイティブ プロパティズ カンパニー ナノ粒子充填アンダーフィル
KR100702566B1 (ko) * 2003-04-07 2007-04-04 히다치 가세고교 가부시끼가이샤 밀봉용 에폭시 수지 성형 재료 및 반도체 장치
DE602004002623T2 (de) * 2003-07-17 2007-01-18 Nitto Denko Corporation, Ibaraki Verfahren zur Herstellung eines Harzverkapselungsscheibchens für Halbleiter
US8071882B2 (en) * 2005-04-19 2011-12-06 Denki Kagaku Kogyo Kabushiki Kaisha Metal base circuit board, LED, and LED light source unit
KR20070062927A (ko) * 2005-12-13 2007-06-18 신에쓰 가가꾸 고교 가부시끼가이샤 플립칩형 반도체 장치의 조립 방법 및 이 방법을 이용하여제조된 반도체 장치
KR101148140B1 (ko) 2007-12-24 2012-05-23 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물　및 이를 이용한 반도체 소자
KR101202042B1 (ko) 2008-12-17 2012-11-16 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
JP2011014885A (ja) * 2009-06-01 2011-01-20 Shin-Etsu Chemical Co Ltd 多層半導体装置用アンダーフィル材のダム材組成物、及び該ダム材組成物を用いた多層半導体装置の製造方法
TWI432477B (zh) * 2010-08-18 2014-04-01 Benq Materials Corp 環氧樹脂組成物
WO2012133818A1 (ja) * 2011-03-31 2012-10-04 三菱化学株式会社 三次元集積回路積層体、及び三次元集積回路積層体用の層間充填材
CN104497490B (zh) * 2014-12-22 2017-08-25 科化新材料泰州有限公司 用于全包封器件的高导热环氧树脂组合物及其制备方法
CN104788911B (zh) * 2015-04-29 2017-10-31 华中科技大学 一种环氧树脂复合材料、其制备方法及应用
WO2017188280A1 (ja) 2016-04-28 2017-11-02 旭硝子株式会社 含フッ素共重合体組成物、その製造方法、および成形体
JP2018104649A (ja) * 2016-12-28 2018-07-05 日東電工株式会社 樹脂シート
MY177304A (en) * 2017-03-31 2020-09-11 Hitachi Chemical Co Ltd Protective material for electronic circuit, sealing material for protective material for electronic circuit, sealing method, and method for manufacturing semiconductor device
JP6288344B1 (ja) * 2017-03-31 2018-03-07 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
JP6292334B1 (ja) * 2017-03-31 2018-03-14 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
KR102359057B1 (ko) * 2017-07-31 2022-02-07 엘지이노텍 주식회사 열전 소자
JP6930555B2 (ja) * 2017-12-14 2021-09-01 昭和電工マテリアルズ株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
JP6547818B2 (ja) * 2017-12-14 2019-07-24 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
JP6547819B2 (ja) * 2017-12-14 2019-07-24 日立化成株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法
JP6870706B2 (ja) * 2019-06-27 2021-05-12 昭和電工マテリアルズ株式会社 電子回路用保護材、電子回路用保護材用封止材、封止方法及び半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862090A (en) 1971-06-28 1975-01-21 Celanese Corp Process for producing oxymethylene copolymers
US3862030A (en) * 1972-12-13 1975-01-21 Amerace Esna Corp Microporous sub-micron filter media
JPS6132446A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体装置
JPS62243630A (ja) * 1986-04-17 1987-10-24 Denki Kagaku Kogyo Kk 無機質充填剤
KR950005309B1 (ko) * 1989-02-09 1995-05-23 신에쓰 가가꾸 고오교 가부시끼가이샤 반도체 봉지용 에폭시 수지 조성물 및 그 경화물
JPH0645740B2 (ja) * 1989-03-01 1994-06-15 信越化学工業株式会社 半導体封止用エポキシ樹脂組成物
JPH02261856A (ja) * 1989-03-31 1990-10-24 Toshiba Corp 半導体封止用エポキシ樹脂組成物及び樹脂封止形半導体装置
JP2864584B2 (ja) * 1989-12-05 1999-03-03 日立化成工業株式会社 半導体用エポキシ樹脂組成物および半導体装置の製造法
JPH06102715B2 (ja) * 1990-08-14 1994-12-14 信越化学工業株式会社 エポキシ樹脂組成物及び半導体装置
JP2668289B2 (ja) * 1991-01-25 1997-10-27 ソマール 株式会社 粉体塗料用エポキシ樹脂組成物
DE4204266C2 (de) * 1992-02-13 1996-04-18 Basf Lacke & Farben Pulverlack und Verfahren zur Innenbeschichtung von Verpackungsbehältern
JPH05239321A (ja) * 1992-02-28 1993-09-17 Toshiba Chem Corp エポキシ樹脂組成物および半導体封止装置
US5630554A (en) * 1995-02-21 1997-05-20 Dowa Mining Co., Ltd. Method of separating and recovering valuable metals and non-metals from composite materials
DE69722106T2 (de) * 1996-08-29 2004-04-01 Mitsubishi Denki K.K. Epoxidharzzusammensetzung und damit eingekapselte Halbleiteranordnungen

Also Published As

Publication number Publication date
DE69727869D1 (de) 2004-04-08
CN1176276A (zh) 1998-03-18
TW495530B (en) 2002-07-21
EP0829455A2 (en) 1998-03-18
JP3611066B2 (ja) 2005-01-19
CN1080746C (zh) 2002-03-13
DE69727869T2 (de) 2005-02-03
EP0829455A3 (en) 1998-11-18
US6207296B1 (en) 2001-03-27
KR19980019141A (ko) 1998-06-05
MY124820A (en) 2006-07-31
MY121624A (en) 2006-02-28
EP0829455B1 (en) 2004-03-03
KR100255340B1 (ko) 2000-05-01
JPH1067883A (ja) 1998-03-10
US5935314A (en) 1999-08-10

Similar Documents

Publication Publication Date Title
SG55369A1 (en) Inorganic filler epoxy resin composition and semiconductor device
SG87012A1 (en) Epoxy resin composition and semiconductor device using the same
SG60109A1 (en) Epoxy resin composition and semiconductor device encapsulated therewith
SG70032A1 (en) Polyphenylene sulfide resin composition and resin-encapsulated semiconductor device
TW338559U (en) Resin package type semiconductor device
EP0501734A3 (en) Semiconductor device-encapsulating epoxy resin composition
EP0484157A3 (en) Maleimide resin composition and resin encapsulated semiconductor device manufactured using the composition
GB2315269B (en) Epoxy resin composition and curing catalyst therefor
SG41939A1 (en) Epoxy resin composition for semiconductor encapsulation
GB9719720D0 (en) UV-and thermally-hardenable epoxy resins
EP0739877A3 (en) Epoxy resin, resin composition and resin-encapsulated semiconductor device
EP0506360A3 (en) Epoxy resin compositions and semiconductor devices encapsulated therewith
SG73590A1 (en) Latent catalyst thermosetting resin composition comprising the catalyst epoxy resin molding material comprising the catalyst and semiconductor device
ZA953337B (en) Modified epoxy resin
TW562245U (en) Resin encapsulating type semiconductor device
EP0783025A3 (en) Epoxy resin composition
EP0439171A3 (en) Epoxy resin composition and semiconductor device encapsulated therewith
GB2291426B (en) Epoxy resin composition process for producing the same and resin-sealed semiconductor device
EP0932648A4 (en) EPOXY CURING AGENT
EP0511702A3 (en) Semiconductor device encapsulated in resin and completely insulated for high voltages
HK1027370A1 (en) Semiconductor sealing epoxy resin composition and semiconductor device using the same
SG90029A1 (en) Epoxy resin composition and resin-encapsulated semiconductor device
SG63691A1 (en) Epoxy resin epoxy resin composition and hardened product thereof
SG87781A1 (en) Polyfunctional cyanate resin composition and resin-encapsulated type semiconductor device
EP0723982A3 (de) Härtbares Epoxidharzgemisch