SG54540A1 - Process for controlling thermal history of czochralski-grown silicon - Google Patents

Process for controlling thermal history of czochralski-grown silicon

Info

Publication number
SG54540A1
SG54540A1 SG1997002798A SG1997002798A SG54540A1 SG 54540 A1 SG54540 A1 SG 54540A1 SG 1997002798 A SG1997002798 A SG 1997002798A SG 1997002798 A SG1997002798 A SG 1997002798A SG 54540 A1 SG54540 A1 SG 54540A1
Authority
SG
Singapore
Prior art keywords
czochralski
thermal history
grown silicon
controlling thermal
controlling
Prior art date
Application number
SG1997002798A
Other languages
English (en)
Inventor
Harold W Korb
Sadasivam Chandrasekhar
Robert J Falster
Joseph C Holzer
Kyong-Min Kim
Steven L Kimbel
Larry E Drafall
Srdjan Ilic
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of SG54540A1 publication Critical patent/SG54540A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
SG1997002798A 1996-08-08 1997-08-06 Process for controlling thermal history of czochralski-grown silicon SG54540A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/694,157 US5779791A (en) 1996-08-08 1996-08-08 Process for controlling thermal history of Czochralski-grown silicon

Publications (1)

Publication Number Publication Date
SG54540A1 true SG54540A1 (en) 1998-11-16

Family

ID=24787640

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997002798A SG54540A1 (en) 1996-08-08 1997-08-06 Process for controlling thermal history of czochralski-grown silicon

Country Status (7)

Country Link
US (1) US5779791A (ja)
EP (2) EP1148158A3 (ja)
JP (1) JPH1095698A (ja)
KR (1) KR19980018538A (ja)
DE (1) DE69707781T2 (ja)
SG (1) SG54540A1 (ja)
TW (1) TW432130B (ja)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10194890A (ja) * 1996-12-27 1998-07-28 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
MY137778A (en) * 1997-04-09 2009-03-31 Memc Electronic Materials Low defect density, ideal oxygen precipitating silicon
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US6340392B1 (en) 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
EP0947611A3 (en) * 1998-03-17 2002-03-20 Shin-Etsu Handotai Company Limited A method for producing a silicon single crystal and the silicon single crystal produced thereby
KR20010053179A (ko) * 1998-06-26 2001-06-25 헨넬리 헬렌 에프 저결함밀도, 자기침입형 실리콘을 성장시키기 위한 결정풀러
WO2000000676A1 (en) 1998-06-26 2000-01-06 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus and its method of use
EP1713121A3 (en) * 1998-09-02 2007-08-15 MEMC Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
JP2002524845A (ja) * 1998-09-02 2002-08-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体
JP3737364B2 (ja) * 1998-10-14 2006-01-18 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 工程条件の変動を許容する無欠陥シリコン結晶の製造法
JP4233651B2 (ja) * 1998-10-29 2009-03-04 信越半導体株式会社 シリコン単結晶ウエーハ
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6458202B1 (en) 1999-09-02 2002-10-01 Memc Electronic Materials, Inc. Process for preparing single crystal silicon having uniform thermal history
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6878396B2 (en) * 2000-04-10 2005-04-12 Micron Technology, Inc. Micro C-4 semiconductor die and method for depositing connection sites thereon
TW498402B (en) * 2000-04-26 2002-08-11 Mitsubishi Material Silicon Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defect of a single crystal
US20040055527A1 (en) * 2000-11-30 2004-03-25 Makoto Kojima Process for controlling thermal history of vacancy-dominated, single crystal silicon
KR20030059293A (ko) * 2000-11-30 2003-07-07 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 베이컨시-지배 단결정 실리콘의 열 이력을 제어하는 공정
DE10102126A1 (de) * 2001-01-18 2002-08-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium
US6514337B2 (en) 2001-02-07 2003-02-04 Seh America, Inc. Method of growing large-diameter dislocation-free<110> crystalline ingots
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
US7132091B2 (en) * 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
US6669775B2 (en) 2001-12-06 2003-12-30 Seh America, Inc. High resistivity silicon wafer produced by a controlled pull rate czochralski method
JP4193503B2 (ja) * 2003-01-31 2008-12-10 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US7282094B2 (en) * 2003-05-28 2007-10-16 Sumco Corporation Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
KR100835293B1 (ko) * 2006-12-29 2008-06-09 주식회사 실트론 실리콘 단결정 잉곳의 제조방법
KR100977627B1 (ko) * 2008-01-02 2010-08-23 주식회사 실트론 석영 도가니의 변형을 방지하는 구조를 가진 단결정성장장치 및 이를 이용한 단결정 성장방법
US7922817B2 (en) * 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
JP5907045B2 (ja) * 2012-11-13 2016-04-20 信越半導体株式会社 シリコン単結晶の引き上げ方法
WO2016019051A1 (en) * 2014-07-31 2016-02-04 Sunedison Semiconductor Limited Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
WO2017096057A1 (en) 2015-12-04 2017-06-08 Sunedison Semiconductor Limited Systems and methods for production of low oxygen content silicon
JP6202119B2 (ja) 2016-03-14 2017-09-27 株式会社Sumco シリコン単結晶の製造方法
JP6642410B2 (ja) * 2016-12-20 2020-02-05 株式会社Sumco シリコン単結晶の製造方法
JP6699620B2 (ja) * 2017-05-26 2020-05-27 株式会社Sumco シリコン単結晶の製造方法
KR102011210B1 (ko) 2018-01-18 2019-08-14 에스케이실트론 주식회사 단결정 잉곳 성장용 인상제어장치 및 이에 적용된 인상제어방법
CN108441942B (zh) * 2018-02-13 2020-09-29 中山大学 晶体旋转温度波动的原位探测方法、控制方法及控制系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
JPH02180789A (ja) * 1989-01-05 1990-07-13 Kawasaki Steel Corp Ｓｉ単結晶の製造方法
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
US5501172A (en) * 1994-03-11 1996-03-26 Shin-Etsu Handotai Co., Ltd. Method of growing silicon single crystals
US5474020A (en) * 1994-05-06 1995-12-12 Texas Instruments Incorporated Oxygen precipitation control in czochralski-grown silicon cyrstals
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method

Also Published As

Publication number Publication date
DE69707781T2 (de) 2002-04-25
JPH1095698A (ja) 1998-04-14
EP1148158A2 (en) 2001-10-24
EP0823497A1 (en) 1998-02-11
DE69707781D1 (de) 2001-12-06
EP1148158A3 (en) 2003-08-27
KR19980018538A (ko) 1998-06-05
US5779791A (en) 1998-07-14
TW432130B (en) 2001-05-01
EP0823497B1 (en) 2001-10-31

Similar Documents

Publication Publication Date Title
SG54540A1 (en) Process for controlling thermal history of czochralski-grown silicon
IL116620A0 (en) Process for low temperature deposition of silicon dioxide
EP0926718A3 (en) Heat treatment method for monocrystalline silicon wafers
GB2347268B (en) Method of semiconductor device fabrication
SG55280A1 (en) Fabrication process of semiconductor substrate
EP0639661A3 (en) Method of preparation at low temperature crystalline coatings of silicon carbide.
GB2296818B (en) Method of producing semiconductor wafer
ZA971709B (en) Method of increasing testosterone
SG80563A1 (en) Rapid cooling of cz silicon crystal growth system
AU3872900A (en) System and method for controlling process temperatures for semi-conductor wafer
PL317752A1 (en) Clothes for and method of controlling body temperature
GB2316805B (en) method for dry-etching of silicon substrate
AU6650098A (en) Method for accelerating healing of thermal injuries
EP0706206A3 (en) Method of etching silicon nitride
EP0895405A4 (en) MODEM CONTROL PROCEDURE
EG21056A (en) Method for refining molten silicon
AU699735B2 (en) Method for controlling reaction temperature
EP0852347A4 (en) METHOD FOR CONTROLLING A SERVOMOTOR
AU6043998A (en) Method for controlling the temperature of a growing semiconductor layer
KR100238220B1 (en) Plattening method of semiconductor device
GB2326648B (en) Growth method of polycrystal silicon film
GB2294755B (en) Apparatus for controlling temperature
EP1004337A4 (en) METHOD FOR REFINING CRYSTALLINE MATERIAL
HUP9800424A3 (en) Process for controlling of filling gasholders
PL318065A1 (en) Method of tuning a temperature controller