SG52657A1 - Improved charge pump circuit for high side switch - Google Patents
Improved charge pump circuit for high side switchInfo
- Publication number
- SG52657A1 SG52657A1 SG1996007438A SG1996007438A SG52657A1 SG 52657 A1 SG52657 A1 SG 52657A1 SG 1996007438 A SG1996007438 A SG 1996007438A SG 1996007438 A SG1996007438 A SG 1996007438A SG 52657 A1 SG52657 A1 SG 52657A1
- Authority
- SG
- Singapore
- Prior art keywords
- charge pump
- side switch
- high side
- pump circuit
- improved charge
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/420,301 US5672992A (en) | 1995-04-11 | 1995-04-11 | Charge pump circuit for high side switch |
Publications (1)
Publication Number | Publication Date |
---|---|
SG52657A1 true SG52657A1 (en) | 1998-09-28 |
Family
ID=23665913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996007438A SG52657A1 (en) | 1995-04-11 | 1996-04-10 | Improved charge pump circuit for high side switch |
Country Status (7)
Country | Link |
---|---|
US (2) | US5672992A (it) |
JP (1) | JP2815838B2 (it) |
KR (1) | KR100214407B1 (it) |
FR (1) | FR2733094A1 (it) |
GB (1) | GB2299904B (it) |
IT (1) | IT1285199B1 (it) |
SG (1) | SG52657A1 (it) |
Families Citing this family (87)
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JP3384521B2 (ja) * | 1996-06-07 | 2003-03-10 | 矢崎総業株式会社 | スイッチング装置 |
KR100203136B1 (ko) * | 1996-06-27 | 1999-06-15 | 김영환 | 래치-업을 방지하는 상승전압발생기 |
DE19709717C1 (de) * | 1997-03-10 | 1998-09-24 | Siemens Ag | Vorrichtung und Verfahren zum Ansteuern wenigstens eines kapazitiven Stellgliedes |
US6011423A (en) * | 1997-05-23 | 2000-01-04 | International Business Machines Corporation | Virtual voltage power supply |
EP0887933A1 (en) * | 1997-06-24 | 1998-12-30 | STMicroelectronics S.r.l. | Turn off circuit for an LDMOS in presence of a reverse current |
US5945872A (en) * | 1997-11-06 | 1999-08-31 | Analog Devices, Inc. | Two-phase boosted CMOS switch drive technique and circuit |
US6118326A (en) * | 1997-11-06 | 2000-09-12 | Analog Devices, Inc. | Two-phase bootstrapped CMOS switch drive technique and circuit |
DE19752986A1 (de) * | 1997-11-28 | 1999-06-02 | Siemens Ag | Halbleiterschaltungsanordnung mit monolithisch integrierten Schaltkreisen und einer Spannungspumpenschaltung |
US6023187A (en) * | 1997-12-23 | 2000-02-08 | Mitsubishi Semiconductor America, Inc. | Voltage pump for integrated circuit and operating method thereof |
US6215708B1 (en) | 1998-09-30 | 2001-04-10 | Integrated Device Technology, Inc. | Charge pump for improving memory cell low VCC performance without increasing gate oxide thickness |
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JP4984998B2 (ja) * | 2007-03-16 | 2012-07-25 | 富士電機株式会社 | 過電流検出回路、dc−dcコンバータ、及び過電流検出方法 |
US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
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US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
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JP2011061891A (ja) * | 2009-09-07 | 2011-03-24 | Renesas Electronics Corp | 負荷駆動回路 |
US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
US9413362B2 (en) | 2011-01-18 | 2016-08-09 | Peregrine Semiconductor Corporation | Differential charge pump |
JP2012170020A (ja) * | 2011-02-16 | 2012-09-06 | Seiko Instruments Inc | 内部電源電圧生成回路 |
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US20150236798A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Methods for Increasing RF Throughput Via Usage of Tunable Filters |
US20140354258A1 (en) * | 2013-05-30 | 2014-12-04 | Silicon Laboratories Inc. | Supply voltage circuit |
JP2016024773A (ja) * | 2014-07-24 | 2016-02-08 | 株式会社東芝 | 電源回路 |
JP6330571B2 (ja) * | 2014-08-19 | 2018-05-30 | 富士電機株式会社 | 半導体装置 |
WO2016035124A1 (ja) * | 2014-09-01 | 2016-03-10 | 株式会社 東芝 | 電圧発生回路 |
US9590498B2 (en) * | 2014-12-31 | 2017-03-07 | Lear Corporation | High side switch for selectively supplying power from a power supply to a load |
WO2016136114A1 (ja) * | 2015-02-25 | 2016-09-01 | 富士電機株式会社 | 基準電圧生成回路および半導体装置 |
RU2595614C1 (ru) * | 2015-07-23 | 2016-08-27 | Федеральное государственное бюджетное научное учреждение "Всероссийский научно-исследовательский институт гидротехники и мелиорации имени А.Н. Костякова" (ФГБНУ "ВНИИГиМ им. А.Н. Костякова") | Генератор импульсов переменной амплитуды |
US20170222641A1 (en) * | 2016-01-29 | 2017-08-03 | Ford Global Technologies, Llc | Dynamic igbt gate drive to reduce switching loss |
CN106972792B (zh) * | 2017-04-27 | 2023-08-18 | 上海灿瑞科技股份有限公司 | 一种h桥驱动电路 |
EP3819905A1 (en) * | 2019-11-05 | 2021-05-12 | EM Microelectronic-Marin SA | Gate controller for a change pump converter |
CN115021740B (zh) * | 2022-07-18 | 2022-10-21 | 江苏泽润新材料有限公司 | 一种nmos高边驱动开关独立控制电路 |
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-
1995
- 1995-04-11 US US08/420,301 patent/US5672992A/en not_active Expired - Lifetime
-
1996
- 1996-04-10 SG SG1996007438A patent/SG52657A1/en unknown
- 1996-04-10 KR KR1019960010779A patent/KR100214407B1/ko not_active IP Right Cessation
- 1996-04-10 GB GB9607460A patent/GB2299904B/en not_active Expired - Fee Related
- 1996-04-10 JP JP8088025A patent/JP2815838B2/ja not_active Expired - Fee Related
- 1996-04-11 FR FR9604519A patent/FR2733094A1/fr active Pending
- 1996-04-11 IT IT96MI000689A patent/IT1285199B1/it active IP Right Grant
- 1996-06-12 US US08/662,821 patent/US5689208A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5672992A (en) | 1997-09-30 |
US5689208A (en) | 1997-11-18 |
KR100214407B1 (ko) | 1999-08-02 |
GB9607460D0 (en) | 1996-06-12 |
JPH08336277A (ja) | 1996-12-17 |
JP2815838B2 (ja) | 1998-10-27 |
GB2299904B (en) | 2000-03-08 |
GB2299904A (en) | 1996-10-16 |
KR960038970A (ko) | 1996-11-21 |
FR2733094A1 (fr) | 1996-10-18 |
ITMI960689A0 (it) | 1996-04-11 |
ITMI960689A1 (it) | 1997-10-11 |
IT1285199B1 (it) | 1998-06-03 |
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