SG50018A1 - Method for developing treatment - Google Patents

Method for developing treatment

Info

Publication number
SG50018A1
SG50018A1 SG1997001405A SG1997001405A SG50018A1 SG 50018 A1 SG50018 A1 SG 50018A1 SG 1997001405 A SG1997001405 A SG 1997001405A SG 1997001405 A SG1997001405 A SG 1997001405A SG 50018 A1 SG50018 A1 SG 50018A1
Authority
SG
Singapore
Prior art keywords
developing treatment
developing
treatment
Prior art date
Application number
SG1997001405A
Other languages
English (en)
Inventor
Norio Semba
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG50018A1 publication Critical patent/SG50018A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03D—APPARATUS FOR PROCESSING EXPOSED PHOTOGRAPHIC MATERIALS; ACCESSORIES THEREFOR
    • G03D5/00—Liquid processing apparatus in which no immersion is effected; Washing apparatus in which no immersion is effected
    • G03D5/04—Liquid processing apparatus in which no immersion is effected; Washing apparatus in which no immersion is effected using liquid sprays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG1997001405A 1996-05-08 1997-05-07 Method for developing treatment SG50018A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11377296 1996-05-08
JP10716797A JP3280883B2 (ja) 1996-05-08 1997-04-24 現像処理方法及び現像処理装置

Publications (1)

Publication Number Publication Date
SG50018A1 true SG50018A1 (en) 1998-06-15

Family

ID=26447223

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997001405A SG50018A1 (en) 1996-05-08 1997-05-07 Method for developing treatment

Country Status (5)

Country Link
US (1) US5854953A (ko)
JP (1) JP3280883B2 (ko)
KR (1) KR100340234B1 (ko)
SG (1) SG50018A1 (ko)
TW (1) TW460924B (ko)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260707A (ja) * 1998-03-09 1999-09-24 Tokyo Electron Ltd 現像処理方法及び現像処理装置
US6248171B1 (en) * 1998-09-17 2001-06-19 Silicon Valley Group, Inc. Yield and line width performance for liquid polymers and other materials
US6689215B2 (en) * 1998-09-17 2004-02-10 Asml Holdings, N.V. Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface
JP3493322B2 (ja) * 1998-09-25 2004-02-03 Ｓｍｃ株式会社 液だれ防止方法およびシステム
JP3616275B2 (ja) * 1999-05-31 2005-02-02 東京エレクトロン株式会社 液処理装置、それに用いる処理液供給ノズル、および液処理方法
US6602382B1 (en) 1999-10-26 2003-08-05 Tokyo Electron Limited Solution processing apparatus
US6384894B2 (en) 2000-01-21 2002-05-07 Tokyo Electron Limited Developing method and developing unit
JP3362781B2 (ja) 2000-02-03 2003-01-07 日本電気株式会社 現像処理方法および装置、現像制御装置、情報記憶媒体
US6634806B2 (en) * 2000-03-13 2003-10-21 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP4335470B2 (ja) 2000-03-31 2009-09-30 東京エレクトロン株式会社 塗布装置及び混合装置
JP3545676B2 (ja) 2000-05-10 2004-07-21 東京エレクトロン株式会社 現像処理装置及び現像処理方法
US6746826B1 (en) 2000-07-25 2004-06-08 Asml Holding N.V. Method for an improved developing process in wafer photolithography
US6692165B2 (en) * 2001-03-01 2004-02-17 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
KR100959740B1 (ko) * 2002-06-07 2010-05-25 도쿄엘렉트론가부시키가이샤 기판처리장치
US7550043B2 (en) * 2002-12-20 2009-06-23 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP4199102B2 (ja) * 2003-12-18 2008-12-17 東京エレクトロン株式会社 基板の処理方法，基板処理システム及び現像液供給ノズル
US7078355B2 (en) * 2003-12-29 2006-07-18 Asml Holding N.V. Method and system of coating polymer solution on surface of a substrate
JP4445315B2 (ja) * 2004-04-13 2010-04-07 株式会社東芝 基板処理方法
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7255747B2 (en) 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
JP4527037B2 (ja) * 2005-09-15 2010-08-18 大日本スクリーン製造株式会社 基板の現像処理方法および基板の現像処理装置
JP4781834B2 (ja) * 2006-02-07 2011-09-28 大日本スクリーン製造株式会社 現像装置および現像方法
KR20080033092A (ko) * 2006-10-11 2008-04-16 쥬키 가부시키가이샤 전자부품의 실장방법 및 장치
JP5308045B2 (ja) * 2008-03-24 2013-10-09 株式会社Ｓｏｋｕｄｏ 現像方法
TWI381475B (zh) * 2009-03-23 2013-01-01 Au Optronics Corp 基板處理系統及顯影方法
JP5067432B2 (ja) * 2010-02-15 2012-11-07 東京エレクトロン株式会社 塗布、現像装置、現像方法及び記憶媒体
JP5494079B2 (ja) * 2010-03-19 2014-05-14 富士通セミコンダクター株式会社 半導体装置の製造方法
KR20110116522A (ko) * 2010-04-19 2011-10-26 삼성전자주식회사 노즐, 이를 포함하는 기판 처리 장치, 그리고 상기 장치를 이용한 처리액 공급 방법
JP5634341B2 (ja) * 2011-06-29 2014-12-03 東京エレクトロン株式会社 めっき処理装置、めっき処理方法および記憶媒体
JP5909477B2 (ja) * 2013-10-25 2016-04-26 東京エレクトロン株式会社 基板処理装置及び液供給装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4564280A (en) * 1982-10-28 1986-01-14 Fujitsu Limited Method and apparatus for developing resist film including a movable nozzle arm
JP3341033B2 (ja) * 1993-06-22 2002-11-05 忠弘 大見 回転薬液洗浄方法及び洗浄装置
JPH07230173A (ja) * 1994-02-17 1995-08-29 Dainippon Screen Mfg Co Ltd 現像方法及びその装置

Also Published As

Publication number Publication date
JPH1050606A (ja) 1998-02-20
TW460924B (en) 2001-10-21
KR100340234B1 (ko) 2002-11-22
US5854953A (en) 1998-12-29
JP3280883B2 (ja) 2002-05-13
KR970077252A (ko) 1997-12-12

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