SG47137A1 - Positive-working resist composition - Google Patents

Positive-working resist composition

Info

Publication number
SG47137A1
SG47137A1 SG1996009737A SG1996009737A SG47137A1 SG 47137 A1 SG47137 A1 SG 47137A1 SG 1996009737 A SG1996009737 A SG 1996009737A SG 1996009737 A SG1996009737 A SG 1996009737A SG 47137 A1 SG47137 A1 SG 47137A1
Authority
SG
Singapore
Prior art keywords
positive
resist composition
working resist
working
composition
Prior art date
Application number
SG1996009737A
Other languages
English (en)
Inventor
Katsuhiko Namba
Kaoru Tatekawa
Hiroshi Moriuma
Yasunori Uetani
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG47137A1 publication Critical patent/SG47137A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
SG1996009737A 1995-05-09 1996-05-06 Positive-working resist composition SG47137A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11041495A JP3427562B2 (ja) 1995-05-09 1995-05-09 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
SG47137A1 true SG47137A1 (en) 1998-03-20

Family

ID=14535182

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996009737A SG47137A1 (en) 1995-05-09 1996-05-06 Positive-working resist composition

Country Status (5)

Country Link
US (1) US5849457A (de)
EP (1) EP0742489A1 (de)
JP (1) JP3427562B2 (de)
KR (1) KR100591863B1 (de)
SG (1) SG47137A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
WO1998049601A1 (fr) * 1997-04-30 1998-11-05 Nippon Zeon Co., Ltd. Composition de photoresine positive pour photomasque
JP4073572B2 (ja) * 1998-05-13 2008-04-09 富士通株式会社 放射線感光材料及びパターンの形成方法
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
KR100299688B1 (ko) * 1999-08-30 2001-09-13 한의섭 포지티브형 포토레지스트 조성물
KR100299689B1 (ko) * 1999-08-30 2001-09-13 한의섭 포지티브형 포토레지스트 조성물
US6406828B1 (en) * 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
US6787286B2 (en) * 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
KR100846085B1 (ko) * 2001-10-31 2008-07-14 주식회사 동진쎄미켐 액정표시장치 회로용 포토레지스트 조성물
US7335319B2 (en) * 2002-02-06 2008-02-26 Arch Specialty Chemicals, Inc. Semiconductor stress buffer coating edge bead removal compositions and method for their use
CN101111803B (zh) * 2005-02-02 2011-07-20 可隆株式会社 正性干膜光致抗蚀剂以及用于制备该光致抗蚀剂的组合物
US8216762B2 (en) 2005-02-02 2012-07-10 Kolon Industries, Inc. Method for manufacturing array board for display device
KR101280019B1 (ko) * 2005-12-01 2013-06-28 주식회사 동진쎄미켐 포토레지스트 조성물

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290656A (en) * 1988-05-07 1994-03-01 Sumitomo Chemical Company, Limited Resist composition, novel phenol compound and quinone diazide sulfonic acid ester of novel phenol compound
DE68927140T2 (de) * 1988-06-13 1997-04-30 Sumitomo Chemical Co Photolackzusammensetzung
JP2808678B2 (ja) * 1989-06-19 1998-10-08 日本電気株式会社 出力回路
DE69126868T2 (de) * 1991-01-11 1998-01-29 Sumitomo Chemical Co Positivresistzusammensetzung
JPH04241353A (ja) * 1991-01-16 1992-08-28 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3070116B2 (ja) * 1991-03-25 2000-07-24 住友化学工業株式会社 多価フェノール化合物およびそれを用いてなるポジ型レジスト組成物
JP3139088B2 (ja) * 1991-04-26 2001-02-26 住友化学工業株式会社 ポジ型レジスト組成物
DE69223083T2 (de) * 1991-04-26 1998-07-02 Sumitomo Chemical Co Positivarbeitende Resistzusammensetzung
EP0510670B1 (de) * 1991-04-26 1996-09-25 Sumitomo Chemical Company, Limited Positivarbeitende Resistzusammensetzung
JPH04362645A (ja) * 1991-06-11 1992-12-15 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH04368950A (ja) * 1991-06-18 1992-12-21 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH05204144A (ja) * 1991-08-21 1993-08-13 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3039048B2 (ja) * 1991-11-01 2000-05-08 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
JPH05150450A (ja) * 1991-11-29 1993-06-18 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3182823B2 (ja) * 1991-12-27 2001-07-03 住友化学工業株式会社 ポジ型レジスト組成物
JP3391471B2 (ja) * 1992-02-25 2003-03-31 住友化学工業株式会社 ポジ型レジスト組成物
JPH05249666A (ja) * 1992-03-05 1993-09-28 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3094652B2 (ja) * 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
JPH05323604A (ja) * 1992-05-27 1993-12-07 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH05323605A (ja) * 1992-05-27 1993-12-07 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3466218B2 (ja) * 1992-06-04 2003-11-10 住友化学工業株式会社 ポジ型レジスト組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound

Also Published As

Publication number Publication date
KR960042214A (ko) 1996-12-21
JP3427562B2 (ja) 2003-07-22
KR100591863B1 (ko) 2006-09-14
EP0742489A1 (de) 1996-11-13
JPH08305014A (ja) 1996-11-22
US5849457A (en) 1998-12-15

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