SG44973A1 - Semiconductor storage device and method of driving the same - Google Patents
Semiconductor storage device and method of driving the sameInfo
- Publication number
- SG44973A1 SG44973A1 SG1996010598A SG1996010598A SG44973A1 SG 44973 A1 SG44973 A1 SG 44973A1 SG 1996010598 A SG1996010598 A SG 1996010598A SG 1996010598 A SG1996010598 A SG 1996010598A SG 44973 A1 SG44973 A1 SG 44973A1
- Authority
- SG
- Singapore
- Prior art keywords
- driving
- same
- storage device
- semiconductor storage
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23295195 | 1995-09-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG44973A1 true SG44973A1 (en) | 1997-12-19 |
Family
ID=16947424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996010598A SG44973A1 (en) | 1995-09-11 | 1996-09-11 | Semiconductor storage device and method of driving the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US5753953A (fr) |
EP (2) | EP0763856B1 (fr) |
KR (1) | KR100413652B1 (fr) |
DE (2) | DE69628056T2 (fr) |
SG (1) | SG44973A1 (fr) |
TW (1) | TW368749B (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2882392B2 (ja) * | 1996-12-25 | 1999-04-12 | 日本電気株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
US6159800A (en) * | 1997-04-11 | 2000-12-12 | Programmable Silicon Solutions | Method of forming a memory cell |
US6027974A (en) * | 1997-04-11 | 2000-02-22 | Programmable Silicon Solutions | Nonvolatile memory |
US6835979B1 (en) | 1997-04-11 | 2004-12-28 | Altera Corporation | Nonvolatle memory |
JP3378879B2 (ja) | 1997-12-10 | 2003-02-17 | 松下電器産業株式会社 | 不揮発性半導体記憶装置及びその駆動方法 |
EP0926260A3 (fr) * | 1997-12-12 | 2001-04-11 | Matsushita Electric Industrial Co., Ltd. | Formation d'une couche métallique d'un patron déterminé utilisant l'interaction entre anticorps et antigènes |
KR100289813B1 (ko) * | 1998-07-03 | 2001-10-26 | 윤종용 | 노아형플렛-셀마스크롬장치 |
US6005807A (en) * | 1998-09-16 | 1999-12-21 | Winbond Electronics Corp. | Method and apparatus for self-aligned memory cells and array using source side injection |
JP3344331B2 (ja) * | 1998-09-30 | 2002-11-11 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
TW444402B (en) | 1999-03-11 | 2001-07-01 | Mosel Vitelic Inc | Flash memory cell and its manufacturing method |
EP1116275A1 (fr) | 1999-07-29 | 2001-07-18 | Koninklijke Philips Electronics N.V. | Dispositif semi-conducteur a memoire non volatile |
TW492189B (en) * | 2001-06-15 | 2002-06-21 | Mosel Vitelic Inc | EEPROM device and the erasing method thereof |
FR2826496A1 (fr) * | 2001-06-25 | 2002-12-27 | St Microelectronics Sa | Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces |
DE10201304A1 (de) * | 2002-01-15 | 2003-07-31 | Infineon Technologies Ag | Nichtflüchtige Halbleiter -Speicherzelle sowie zugehöriges Herstellungsverfahren |
DE60205389D1 (de) * | 2002-11-28 | 2005-09-08 | St Microelectronics Srl | Einzelzelllöschverfahren der Rückgewinnung von progammiergestörte Zellen in nichtflüchtige Speichervorrichtung |
US6819594B2 (en) * | 2003-01-06 | 2004-11-16 | Ememory Technology Inc. | Electrically erasable programmable logic device |
KR100583968B1 (ko) * | 2004-08-03 | 2006-05-26 | 삼성전자주식회사 | 스페이스 트랜치들을 갖는 불 휘발성 메모리 장치들 및 그형성방법들 |
CN100411145C (zh) * | 2005-08-19 | 2008-08-13 | 力晶半导体股份有限公司 | 非挥发性存储器及其制造方法与操作方法 |
TWI281753B (en) * | 2005-12-13 | 2007-05-21 | Powerchip Semiconductor Corp | Non-volatile memory and manufacturing method and operating method thereof |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US7974114B2 (en) * | 2009-04-28 | 2011-07-05 | Infineon Technologies Ag | Memory cell arrangements |
TWM382423U (en) | 2009-12-31 | 2010-06-11 | Green Power Led Corp | Tube-less LED fluorescent lamp |
DE202010011792U1 (de) | 2010-08-25 | 2011-02-24 | AzureLighting Technologies, Inc., Xindian | Schutzschaltkreis einer T8 LED-Beleuchtungsröhre |
JP6751002B2 (ja) * | 2016-10-19 | 2020-09-02 | 旭化成エレクトロニクス株式会社 | 電流源 |
JP6751013B2 (ja) * | 2016-12-27 | 2020-09-02 | 旭化成エレクトロニクス株式会社 | 温度特性調整回路 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62113478A (ja) * | 1985-11-13 | 1987-05-25 | Toshiba Corp | 不揮発性半導体メモリ |
JPH04359476A (ja) * | 1991-06-05 | 1992-12-11 | Oki Electric Ind Co Ltd | 不揮発性半導体メモリの書き換え方法 |
EP0517353B1 (fr) * | 1991-06-07 | 1997-05-14 | Sharp Kabushiki Kaisha | Mémoire rémanente |
JP2862434B2 (ja) * | 1991-06-07 | 1999-03-03 | シャープ株式会社 | 不揮発性メモリ |
JPH05110071A (ja) * | 1991-10-17 | 1993-04-30 | Seiko Epson Corp | 半導体装置 |
JPH05226662A (ja) * | 1992-02-18 | 1993-09-03 | Matsushita Electron Corp | 半導体記憶装置 |
JPH06120515A (ja) * | 1992-10-09 | 1994-04-28 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリのデータ書き込み及びデータ消去方法 |
US5910912A (en) * | 1992-10-30 | 1999-06-08 | International Business Machines Corporation | Flash EEPROM with dual-sidewall gate |
DE69325505T2 (de) * | 1993-02-19 | 1999-10-28 | St Microelectronics Srl | Programmierungsverfahren einer EEPROM-Zelle mit doppelter Polysiliziumschicht |
KR0147452B1 (ko) * | 1993-11-30 | 1998-08-01 | 사토 후미오 | 불휘발성 반도체기억장치 |
US5422504A (en) * | 1994-05-02 | 1995-06-06 | Motorola Inc. | EEPROM memory device having a sidewall spacer floating gate electrode and process |
US5429969A (en) * | 1994-05-31 | 1995-07-04 | Motorola, Inc. | Process for forming electrically programmable read-only memory cell with a merged select/control gate |
KR0144421B1 (ko) * | 1994-07-18 | 1998-07-01 | 김주용 | 플레쉬 이.이.피.롬의 제조방법 |
-
1996
- 1996-09-09 US US08/709,901 patent/US5753953A/en not_active Expired - Fee Related
- 1996-09-09 TW TW085111010A patent/TW368749B/zh active
- 1996-09-09 KR KR1019960038969A patent/KR100413652B1/ko not_active IP Right Cessation
- 1996-09-10 EP EP96114492A patent/EP0763856B1/fr not_active Expired - Lifetime
- 1996-09-10 EP EP00101702A patent/EP1020925B1/fr not_active Expired - Lifetime
- 1996-09-10 DE DE69628056T patent/DE69628056T2/de not_active Expired - Fee Related
- 1996-09-10 DE DE69618302T patent/DE69618302T2/de not_active Expired - Fee Related
- 1996-09-11 SG SG1996010598A patent/SG44973A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE69618302T2 (de) | 2002-08-08 |
KR970018630A (ko) | 1997-04-30 |
DE69618302D1 (de) | 2002-02-07 |
DE69628056T2 (de) | 2003-11-20 |
EP1020925A2 (fr) | 2000-07-19 |
TW368749B (en) | 1999-09-01 |
EP1020925B1 (fr) | 2003-05-07 |
EP1020925A3 (fr) | 2000-09-20 |
KR100413652B1 (ko) | 2004-05-27 |
EP0763856B1 (fr) | 2002-01-02 |
EP0763856A1 (fr) | 1997-03-19 |
DE69628056D1 (de) | 2003-06-12 |
US5753953A (en) | 1998-05-19 |
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