SG42803A1 - Utilization of sih4 soak purging deposition processes - Google Patents
Utilization of sih4 soak purging deposition processesInfo
- Publication number
- SG42803A1 SG42803A1 SG1995002044A SG1995002044A SG42803A1 SG 42803 A1 SG42803 A1 SG 42803A1 SG 1995002044 A SG1995002044 A SG 1995002044A SG 1995002044 A SG1995002044 A SG 1995002044A SG 42803 A1 SG42803 A1 SG 42803A1
- Authority
- SG
- Singapore
- Prior art keywords
- sih4
- purging
- soak
- utilization
- deposition processes
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31416194A | 1994-09-27 | 1994-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG42803A1 true SG42803A1 (en) | 1997-10-17 |
Family
ID=23218827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1995002044A SG42803A1 (en) | 1994-09-27 | 1995-09-27 | Utilization of sih4 soak purging deposition processes |
Country Status (6)
Country | Link |
---|---|
US (3) | US5780360A (ja) |
EP (1) | EP0704551B1 (ja) |
JP (2) | JP3167100B2 (ja) |
KR (1) | KR100214910B1 (ja) |
DE (1) | DE69518710T2 (ja) |
SG (1) | SG42803A1 (ja) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
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US6090706A (en) * | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
DE69518710T2 (de) * | 1994-09-27 | 2001-05-23 | Applied Materials Inc | Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer |
EP0826629B1 (en) * | 1996-08-27 | 2002-11-20 | The Boc Group, Inc. | Recovery of noble gases |
US6127269A (en) * | 1996-11-12 | 2000-10-03 | Taiwan Semiconductor Manufacturing Company | Method for enhancing sheet resistance uniformity of chemical vapor deposited (CVD) tungsten silicide layers |
US5963836A (en) * | 1996-12-03 | 1999-10-05 | Genus, Inc. | Methods for minimizing as-deposited stress in tungsten silicide films |
DE19704533C2 (de) * | 1997-02-06 | 2000-10-26 | Siemens Ag | Verfahren zur Schichterzeugung auf einer Oberfläche |
US6068703A (en) * | 1997-07-11 | 2000-05-30 | Applied Materials, Inc. | Gas mixing apparatus and method |
JPH11200050A (ja) | 1998-01-14 | 1999-07-27 | Mitsubishi Electric Corp | タングステンシリサイド膜の形成方法、半導体装置の製造方法、及び半導体ウェーハ処理装置 |
TW589398B (en) * | 1998-05-20 | 2004-06-01 | Samsung Electronics Co Ltd | Filtering technique for CVD chamber process gases and the same apparatus |
US6190732B1 (en) * | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6300255B1 (en) * | 1999-02-24 | 2001-10-09 | Applied Materials, Inc. | Method and apparatus for processing semiconductive wafers |
JP2000294775A (ja) * | 1999-04-07 | 2000-10-20 | Sony Corp | 半導体装置の製造方法 |
WO2000070121A1 (en) * | 1999-05-19 | 2000-11-23 | Applied Materials, Inc. | UTILIZATION OF SiH4, SOAK AND PURGE IN DEPOSITION PROCESSES |
JP2001110750A (ja) * | 1999-09-30 | 2001-04-20 | Applied Materials Inc | タングステンシリサイド膜を形成する方法、および金属−絶縁膜−半導体型トランジスタを製造する方法 |
KR100364656B1 (ko) * | 2000-06-22 | 2002-12-16 | 삼성전자 주식회사 | 실리사이드 증착을 위한 화학 기상 증착 방법 및 이를수행하기 위한 장치 |
KR20030019613A (ko) | 2000-07-28 | 2003-03-06 | 동경 엘렉트론 주식회사 | 성막방법 |
DE10115228B4 (de) * | 2001-03-28 | 2006-07-27 | Samsung Electronics Co., Ltd., Suwon | Steuerung des anormalen Wachstums bei auf Dichlorsilan (DCS) basierenden CVD-Polycid WSix-Filmen |
US7141494B2 (en) * | 2001-05-22 | 2006-11-28 | Novellus Systems, Inc. | Method for reducing tungsten film roughness and improving step coverage |
US7005372B2 (en) * | 2003-01-21 | 2006-02-28 | Novellus Systems, Inc. | Deposition of tungsten nitride |
US7262125B2 (en) * | 2001-05-22 | 2007-08-28 | Novellus Systems, Inc. | Method of forming low-resistivity tungsten interconnects |
US6635965B1 (en) * | 2001-05-22 | 2003-10-21 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US9076843B2 (en) | 2001-05-22 | 2015-07-07 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US7589017B2 (en) * | 2001-05-22 | 2009-09-15 | Novellus Systems, Inc. | Methods for growing low-resistivity tungsten film |
US7955972B2 (en) * | 2001-05-22 | 2011-06-07 | Novellus Systems, Inc. | Methods for growing low-resistivity tungsten for high aspect ratio and small features |
US6517235B2 (en) * | 2001-05-31 | 2003-02-11 | Chartered Semiconductor Manufacturing Ltd. | Using refractory metal silicidation phase transition temperature points to control and/or calibrate RTP low temperature operation |
US7211144B2 (en) * | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
US6730367B2 (en) * | 2002-03-05 | 2004-05-04 | Micron Technology, Inc. | Atomic layer deposition method with point of use generated reactive gas species |
US20050229947A1 (en) * | 2002-06-14 | 2005-10-20 | Mykrolis Corporation | Methods of inserting or removing a species from a substrate |
US6844258B1 (en) | 2003-05-09 | 2005-01-18 | Novellus Systems, Inc. | Selective refractory metal and nitride capping |
US7754604B2 (en) * | 2003-08-26 | 2010-07-13 | Novellus Systems, Inc. | Reducing silicon attack and improving resistivity of tungsten nitride film |
US7323411B1 (en) * | 2003-09-26 | 2008-01-29 | Cypress Semiconductor Corporation | Method of selective tungsten deposition on a silicon surface |
US7408225B2 (en) * | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
KR100695484B1 (ko) * | 2004-01-13 | 2007-03-15 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택 형성 방법 |
US20050186339A1 (en) * | 2004-02-20 | 2005-08-25 | Applied Materials, Inc., A Delaware Corporation | Methods and apparatuses promoting adhesion of dielectric barrier film to copper |
WO2006019603A2 (en) * | 2004-07-30 | 2006-02-23 | Applied Materials, Inc. | Thin tungsten silicide layer deposition and gate metal integration |
JP4798688B2 (ja) * | 2004-08-26 | 2011-10-19 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
KR100671627B1 (ko) * | 2004-10-25 | 2007-01-19 | 주식회사 하이닉스반도체 | 플래쉬 메모리소자의 소스 콘택 형성방법 |
US7743731B2 (en) * | 2006-03-30 | 2010-06-29 | Tokyo Electron Limited | Reduced contaminant gas injection system and method of using |
US7655567B1 (en) | 2007-07-24 | 2010-02-02 | Novellus Systems, Inc. | Methods for improving uniformity and resistivity of thin tungsten films |
US8049178B2 (en) * | 2007-08-30 | 2011-11-01 | Washington State University Research Foundation | Semiconductive materials and associated uses thereof |
US7772114B2 (en) * | 2007-12-05 | 2010-08-10 | Novellus Systems, Inc. | Method for improving uniformity and adhesion of low resistivity tungsten film |
US8053365B2 (en) | 2007-12-21 | 2011-11-08 | Novellus Systems, Inc. | Methods for forming all tungsten contacts and lines |
US8062977B1 (en) | 2008-01-31 | 2011-11-22 | Novellus Systems, Inc. | Ternary tungsten-containing resistive thin films |
US8058170B2 (en) * | 2008-06-12 | 2011-11-15 | Novellus Systems, Inc. | Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics |
US8551885B2 (en) * | 2008-08-29 | 2013-10-08 | Novellus Systems, Inc. | Method for reducing tungsten roughness and improving reflectivity |
US20100267230A1 (en) | 2009-04-16 | 2010-10-21 | Anand Chandrashekar | Method for forming tungsten contacts and interconnects with small critical dimensions |
US9159571B2 (en) | 2009-04-16 | 2015-10-13 | Lam Research Corporation | Tungsten deposition process using germanium-containing reducing agent |
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US8207062B2 (en) * | 2009-09-09 | 2012-06-26 | Novellus Systems, Inc. | Method for improving adhesion of low resistivity tungsten/tungsten nitride layers |
US8709948B2 (en) | 2010-03-12 | 2014-04-29 | Novellus Systems, Inc. | Tungsten barrier and seed for copper filled TSV |
WO2013015017A1 (ja) * | 2011-07-27 | 2013-01-31 | シャープ株式会社 | シリコン含有膜の製造方法 |
JP2013143429A (ja) * | 2012-01-10 | 2013-07-22 | Sharp Corp | シリコン含有膜の製造方法および光電変換装置の製造方法 |
KR102064627B1 (ko) | 2012-03-27 | 2020-01-09 | 노벨러스 시스템즈, 인코포레이티드 | 텅스텐 피처 충진 |
US9034760B2 (en) | 2012-06-29 | 2015-05-19 | Novellus Systems, Inc. | Methods of forming tensile tungsten films and compressive tungsten films |
US8975184B2 (en) | 2012-07-27 | 2015-03-10 | Novellus Systems, Inc. | Methods of improving tungsten contact resistance in small critical dimension features |
US8853080B2 (en) | 2012-09-09 | 2014-10-07 | Novellus Systems, Inc. | Method for depositing tungsten film with low roughness and low resistivity |
WO2014052388A1 (en) | 2012-09-26 | 2014-04-03 | Applied Materials, Inc. | An apparatus and method for purging gaseous compounds |
US9153486B2 (en) | 2013-04-12 | 2015-10-06 | Lam Research Corporation | CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications |
US9589808B2 (en) | 2013-12-19 | 2017-03-07 | Lam Research Corporation | Method for depositing extremely low resistivity tungsten |
US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
US10378107B2 (en) * | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
US9613818B2 (en) | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
KR20200140391A (ko) | 2018-05-03 | 2020-12-15 | 램 리써치 코포레이션 | 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법 |
WO2020123987A1 (en) | 2018-12-14 | 2020-06-18 | Lam Research Corporation | Atomic layer deposition on 3d nand structures |
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US4842893A (en) | 1983-12-19 | 1989-06-27 | Spectrum Control, Inc. | High speed process for coating substrates |
JPS63120419A (ja) * | 1986-11-10 | 1988-05-24 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US4737474A (en) * | 1986-11-17 | 1988-04-12 | Spectrum Cvd, Inc. | Silicide to silicon bonding process |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US4902645A (en) * | 1987-08-24 | 1990-02-20 | Fujitsu Limited | Method of selectively forming a silicon-containing metal layer |
US4842892A (en) * | 1987-09-29 | 1989-06-27 | Xerox Corporation | Method for depositing an n+ amorphous silicon layer onto contaminated substrate |
JPS6457034U (ja) | 1987-10-07 | 1989-04-10 | ||
JPH02172155A (ja) | 1988-12-26 | 1990-07-03 | Haibetsuku:Kk | チップ型ランプ |
JPH02237025A (ja) * | 1989-03-09 | 1990-09-19 | Matsushita Electron Corp | 半導体装置の製造方法 |
JPH0383389A (ja) | 1989-08-28 | 1991-04-09 | Murata Mfg Co Ltd | 回路基板 |
EP1069610A2 (en) * | 1990-01-08 | 2001-01-17 | Lsi Logic Corporation | Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus |
US4966869A (en) * | 1990-05-04 | 1990-10-30 | Spectrum Cvd, Inc. | Tungsten disilicide CVD |
JPH0461324A (ja) * | 1990-06-29 | 1992-02-27 | Nec Corp | 選択気相成長法 |
JPH04294532A (ja) * | 1991-03-22 | 1992-10-19 | Sony Corp | タングステンシリサイド膜の形成方法 |
JPH05182925A (ja) * | 1991-12-30 | 1993-07-23 | Sony Corp | 半導体装置の製造方法及び半導体装置の製造装置 |
US5231056A (en) * | 1992-01-15 | 1993-07-27 | Micron Technology, Inc. | Tungsten silicide (WSix) deposition process for semiconductor manufacture |
US5326723A (en) * | 1992-09-09 | 1994-07-05 | Intel Corporation | Method for improving stability of tungsten chemical vapor deposition |
US5272112A (en) * | 1992-11-09 | 1993-12-21 | Genus, Inc. | Low-temperature low-stress blanket tungsten film |
US5500249A (en) * | 1992-12-22 | 1996-03-19 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor deposition |
JP3294413B2 (ja) * | 1993-12-28 | 2002-06-24 | 富士通株式会社 | 半導体装置の製造方法及び製造装置 |
US5447887A (en) * | 1994-04-01 | 1995-09-05 | Motorola, Inc. | Method for capping copper in semiconductor devices |
DE69518710T2 (de) * | 1994-09-27 | 2001-05-23 | Applied Materials Inc | Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer |
EP0802564A3 (en) * | 1996-04-19 | 1999-02-24 | Nec Corporation | Semiconductor device having high resistive element including high melting point metal |
-
1995
- 1995-09-26 DE DE69518710T patent/DE69518710T2/de not_active Expired - Fee Related
- 1995-09-26 EP EP95115168A patent/EP0704551B1/en not_active Expired - Lifetime
- 1995-09-27 JP JP24979695A patent/JP3167100B2/ja not_active Expired - Fee Related
- 1995-09-27 SG SG1995002044A patent/SG42803A1/en unknown
- 1995-09-27 KR KR1019950032020A patent/KR100214910B1/ko not_active IP Right Cessation
-
1996
- 1996-06-20 US US08/666,976 patent/US5780360A/en not_active Expired - Fee Related
- 1996-11-05 US US08/743,929 patent/US5817576A/en not_active Expired - Fee Related
-
1998
- 1998-01-26 JP JP01266098A patent/JP3990792B2/ja not_active Expired - Fee Related
- 1998-09-28 US US09/162,336 patent/US6193813B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69518710D1 (de) | 2000-10-12 |
US5780360A (en) | 1998-07-14 |
DE69518710T2 (de) | 2001-05-23 |
EP0704551A1 (en) | 1996-04-03 |
JPH10212583A (ja) | 1998-08-11 |
US6193813B1 (en) | 2001-02-27 |
KR100214910B1 (ko) | 1999-08-02 |
KR960012331A (ko) | 1996-04-20 |
US5817576A (en) | 1998-10-06 |
JPH08236464A (ja) | 1996-09-13 |
EP0704551B1 (en) | 2000-09-06 |
JP3167100B2 (ja) | 2001-05-14 |
JP3990792B2 (ja) | 2007-10-17 |
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