SG40887G - Semiconductor integrated circuit devices and method of manufacturing the same - Google Patents

Semiconductor integrated circuit devices and method of manufacturing the same

Info

Publication number
SG40887G
SG40887G SG40887A SG40887A SG40887G SG 40887 G SG40887 G SG 40887G SG 40887 A SG40887 A SG 40887A SG 40887 A SG40887 A SG 40887A SG 40887 G SG40887 G SG 40887G
Authority
SG
Singapore
Prior art keywords
manufacturing
same
integrated circuit
semiconductor integrated
circuit devices
Prior art date
Application number
SG40887A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG40887G publication Critical patent/SG40887G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H03K19/01818—Interface arrangements for integrated injection logic (I2L)

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
SG40887A 1981-09-24 1987-05-06 Semiconductor integrated circuit devices and method of manufacturing the same SG40887G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149433A JPS5851561A (ja) 1981-09-24 1981-09-24 半導体集積回路装置

Publications (1)

Publication Number Publication Date
SG40887G true SG40887G (en) 1987-07-17

Family

ID=15474999

Family Applications (1)

Application Number Title Priority Date Filing Date
SG40887A SG40887G (en) 1981-09-24 1987-05-06 Semiconductor integrated circuit devices and method of manufacturing the same

Country Status (8)

Country Link
JP (1) JPS5851561A (de)
DE (1) DE3235409A1 (de)
FR (2) FR2514200A1 (de)
GB (3) GB2107117B (de)
HK (2) HK69187A (de)
IT (1) IT1153730B (de)
MY (1) MY8700644A (de)
SG (1) SG40887G (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
JPS60253261A (ja) * 1984-05-29 1985-12-13 Clarion Co Ltd Ｉｉｌ素子を含む集積回路
JPH0387403A (ja) * 1989-08-31 1991-04-12 Mitsubishi Electric Corp 融雪装置
JP2550736B2 (ja) * 1990-02-14 1996-11-06 三菱電機株式会社 融雪装置
KR920015363A (ko) * 1991-01-22 1992-08-26 김광호 Ttl 입력 버퍼회로

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594241A (en) * 1968-01-11 1971-07-20 Tektronix Inc Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4429326A (en) * 1978-11-29 1984-01-31 Hitachi, Ltd. I2 L Memory with nonvolatile storage
JPS5611661A (en) * 1979-07-09 1981-02-05 Sankyo Seiki Mfg Co Ltd Magnetic card reader of normal card containing type
JPS56116661A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
GB2154061A (en) 1985-08-29
DE3235409A1 (de) 1983-04-14
IT8223326A0 (it) 1982-09-17
GB2154060B (en) 1986-05-14
FR2514200B1 (de) 1984-07-27
MY8700644A (en) 1987-12-31
GB2154060A (en) 1985-08-29
GB2154061B (en) 1986-04-09
HK69887A (en) 1987-10-02
GB2107117B (en) 1986-04-09
FR2533367B1 (fr) 1986-01-24
HK69187A (en) 1987-10-02
GB8502453D0 (en) 1985-03-06
FR2533367A1 (fr) 1984-03-23
FR2514200A1 (fr) 1983-04-08
GB8502454D0 (en) 1985-03-06
IT1153730B (it) 1987-01-14
JPS5851561A (ja) 1983-03-26
GB2107117A (en) 1983-04-20

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