SG195501A1 - Conformal doping via plasma activated atomic layer deposition and conformal film deposition - Google Patents
Conformal doping via plasma activated atomic layer deposition and conformal film deposition Download PDFInfo
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- SG195501A1 SG195501A1 SG2013039938A SG2013039938A SG195501A1 SG 195501 A1 SG195501 A1 SG 195501A1 SG 2013039938 A SG2013039938 A SG 2013039938A SG 2013039938 A SG2013039938 A SG 2013039938A SG 195501 A1 SG195501 A1 SG 195501A1
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- Singapore
- Prior art keywords
- dopant
- precursor
- substrate
- reaction chamber
- film layer
- Prior art date
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- 238000000231 atomic layer deposition Methods 0.000 title claims description 135
- 238000000151 deposition Methods 0.000 title description 43
- 230000008021 deposition Effects 0.000 title description 30
- 239000002019 doping agent Substances 0.000 claims abstract description 389
- 239000002243 precursor Substances 0.000 claims abstract description 208
- 238000000034 method Methods 0.000 claims abstract description 148
- 239000000758 substrate Substances 0.000 claims abstract description 147
- 238000006243 chemical reaction Methods 0.000 claims abstract description 108
- 239000010410 layer Substances 0.000 claims description 325
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 37
- 229910052796 boron Inorganic materials 0.000 claims description 37
- 229910052785 arsenic Inorganic materials 0.000 claims description 29
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 29
- 230000001590 oxidative effect Effects 0.000 claims description 27
- 239000000376 reactant Substances 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 21
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical group COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 20
- 239000007800 oxidant agent Substances 0.000 claims description 19
- 239000005368 silicate glass Substances 0.000 claims description 19
- 238000010926 purge Methods 0.000 claims description 18
- -1 alkyl borate Chemical compound 0.000 claims description 17
- 239000003989 dielectric material Substances 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 230000001404 mediated effect Effects 0.000 claims description 10
- 238000005086 pumping Methods 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052762 osmium Inorganic materials 0.000 claims description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 claims description 6
- 239000001272 nitrous oxide Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical group [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 4
- 229910000413 arsenic oxide Inorganic materials 0.000 claims description 4
- 229910052810 boron oxide Inorganic materials 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- PZEXNMSXAVGEAP-UHFFFAOYSA-N 2-diphenylarsanylethyl(diphenyl)arsane Chemical compound C=1C=CC=CC=1[As](C=1C=CC=CC=1)CC[As](C=1C=CC=CC=1)C1=CC=CC=C1 PZEXNMSXAVGEAP-UHFFFAOYSA-N 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910004469 SiHx Inorganic materials 0.000 claims description 3
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 claims description 3
- 125000005233 alkylalcohol group Chemical group 0.000 claims description 3
- IVYZFLBDJCMVRZ-UHFFFAOYSA-N aminoarsenic Chemical compound [As]N IVYZFLBDJCMVRZ-UHFFFAOYSA-N 0.000 claims description 3
- 229960002594 arsenic trioxide Drugs 0.000 claims description 3
- FGIWMSAVEQNPPQ-UHFFFAOYSA-N arsenic;hydrate Chemical compound O.[As] FGIWMSAVEQNPPQ-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- ZTEHTGMWGUKFNE-UHFFFAOYSA-N methyl 3-[[2-(diaminomethylideneamino)-1,3-thiazol-4-yl]methylsulfanyl]propanimidate Chemical compound COC(=N)CCSCC1=CSC(N=C(N)N)=N1 ZTEHTGMWGUKFNE-UHFFFAOYSA-N 0.000 claims description 3
- QSLGKGJRFUIAEG-UHFFFAOYSA-N n-[bis(dimethylamino)arsanyl]-n-methylmethanamine Chemical compound CN(C)[As](N(C)C)N(C)C QSLGKGJRFUIAEG-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- WWVNWQJKWKSDQM-UHFFFAOYSA-N triethylarsane Chemical compound CC[As](CC)CC WWVNWQJKWKSDQM-UHFFFAOYSA-N 0.000 claims description 3
- BPLUKJNHPBNVQL-UHFFFAOYSA-N triphenylarsine Chemical compound C1=CC=CC=C1[As](C=1C=CC=CC=1)C1=CC=CC=C1 BPLUKJNHPBNVQL-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001868 water Inorganic materials 0.000 claims description 3
- QDPOHAYYMHVFMI-UHFFFAOYSA-N boron;hydrate Chemical compound [B].O QDPOHAYYMHVFMI-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 71
- 239000004065 semiconductor Substances 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000000678 plasma activation Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 238000001179 sorption measurement Methods 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
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- 238000005468 ion implantation Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 238000001994 activation Methods 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
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- NHDIQVFFNDKAQU-UHFFFAOYSA-N tripropan-2-yl borate Chemical compound CC(C)OB(OC(C)C)OC(C)C NHDIQVFFNDKAQU-UHFFFAOYSA-N 0.000 description 2
- PCLMMJIWMGUYKF-UHFFFAOYSA-N 2,4,6-tribromo-1,3,5,2,4,6-triazatriborinane Chemical compound BrB1NB(Br)NB(Br)N1 PCLMMJIWMGUYKF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000012369 In process control Methods 0.000 description 1
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- 102100034757 Thiol S-methyltransferase METTL7B Human genes 0.000 description 1
- 101710082490 Thiol S-methyltransferase METTL7B Proteins 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
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- 101150023727 ald2 gene Proteins 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- LGQXXHMEBUOXRP-UHFFFAOYSA-N tributyl borate Chemical compound CCCCOB(OCCCC)OCCCC LGQXXHMEBUOXRP-UHFFFAOYSA-N 0.000 description 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- JLPJTCGUKOBWRJ-UHFFFAOYSA-N tripentyl borate Chemical compound CCCCCOB(OCCCCC)OCCCCC JLPJTCGUKOBWRJ-UHFFFAOYSA-N 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- OBAJXDYVZBHCGT-UHFFFAOYSA-N tris(pentafluorophenyl)borane Chemical compound FC1=C(F)C(F)=C(F)C(F)=C1B(C=1C(=C(F)C(F)=C(F)C=1F)F)C1=C(F)C(F)=C(F)C(F)=C1F OBAJXDYVZBHCGT-UHFFFAOYSA-N 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261649114P | 2012-05-18 | 2012-05-18 | |
US13/607,386 US8956983B2 (en) | 2010-04-15 | 2012-09-07 | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG195501A1 true SG195501A1 (en) | 2013-12-30 |
Family
ID=49856026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013039938A SG195501A1 (en) | 2012-05-18 | 2013-05-20 | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102122612B1 (zh) |
SG (1) | SG195501A1 (zh) |
TW (1) | TWI636571B (zh) |
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US20090203197A1 (en) * | 2008-02-08 | 2009-08-13 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
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KR102122612B1 (ko) | 2020-06-15 |
KR20130129149A (ko) | 2013-11-27 |
TW201411845A (zh) | 2014-03-16 |
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