SG184233A1 - HIGH-PURITY Cu BONDING WIRE - Google Patents

HIGH-PURITY Cu BONDING WIRE Download PDF

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Publication number
SG184233A1
SG184233A1 SG2012070769A SG2012070769A SG184233A1 SG 184233 A1 SG184233 A1 SG 184233A1 SG 2012070769 A SG2012070769 A SG 2012070769A SG 2012070769 A SG2012070769 A SG 2012070769A SG 184233 A1 SG184233 A1 SG 184233A1
Authority
SG
Singapore
Prior art keywords
wire
bonding
high purity
ball
alloy wire
Prior art date
Application number
SG2012070769A
Other languages
English (en)
Inventor
Tsutomu Yamashita
Takeshi Kuwahara
Junichi Okazaki
Original Assignee
Tanaka Densi Kogyo K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Densi Kogyo K K filed Critical Tanaka Densi Kogyo K K
Publication of SG184233A1 publication Critical patent/SG184233A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/4851Morphology of the connecting portion, e.g. grain size distribution
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • H01L2224/85207Thermosonic bonding
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    • H01L2924/102Material of the semiconductor or solid state bodies
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    • H01L2924/10251Elemental semiconductors, i.e. Group IV
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    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20752Diameter ranges larger or equal to 20 microns less than 30 microns

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
SG2012070769A 2010-03-25 2010-03-25 HIGH-PURITY Cu BONDING WIRE SG184233A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/055281 WO2011118009A1 (ja) 2010-03-25 2010-03-25 高純度Cuボンディングワイヤ

Publications (1)

Publication Number Publication Date
SG184233A1 true SG184233A1 (en) 2012-10-30

Family

ID=44672600

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2012070769A SG184233A1 (en) 2010-03-25 2010-03-25 HIGH-PURITY Cu BONDING WIRE

Country Status (4)

Country Link
KR (1) KR101280053B1 (ko)
MY (1) MY166908A (ko)
SG (1) SG184233A1 (ko)
WO (1) WO2011118009A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5998758B2 (ja) 2012-08-31 2016-09-28 三菱マテリアル株式会社 荒引銅線及び巻線、並びに、荒引銅線の製造方法
JP5680773B1 (ja) * 2014-01-29 2015-03-04 千住金属工業株式会社 Cu核ボール、はんだ継手、フォームはんだおよびはんだペースト
CN106029260B (zh) * 2014-02-04 2018-05-18 千住金属工业株式会社 Cu球、Cu芯球、钎焊接头、焊膏和成形焊料
JP6361194B2 (ja) 2014-03-14 2018-07-25 三菱マテリアル株式会社 銅鋳塊、銅線材、及び、銅鋳塊の製造方法
WO2016189752A1 (ja) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR101688080B1 (ko) * 2015-09-09 2016-12-20 앰코 테크놀로지 코리아 주식회사 반도체 패키지
CN109763015A (zh) * 2019-03-25 2019-05-17 杭州辰卓科技有限公司 一种电子封装用阻尼型高导热耐脆断银键合线用材料

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Publication number Priority date Publication date Assignee Title
JPH01290231A (ja) * 1988-05-18 1989-11-22 Mitsubishi Metal Corp 半導体装置用銅合金極細線及び半導体装置
JPH01291435A (ja) * 1988-05-18 1989-11-24 Mitsubishi Metal Corp 半導体装置用銅合金極細線及び半導体装置
JP2004064033A (ja) 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
KR101019811B1 (ko) * 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
KR100702662B1 (ko) 2005-02-18 2007-04-02 엠케이전자 주식회사 반도체 패키징용 구리 본딩 와이어
JP4349641B1 (ja) * 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ

Also Published As

Publication number Publication date
KR20130004912A (ko) 2013-01-14
CN102859672A (zh) 2013-01-02
WO2011118009A1 (ja) 2011-09-29
MY166908A (en) 2018-07-24
KR101280053B1 (ko) 2013-06-28

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