SG184233A1 - HIGH-PURITY Cu BONDING WIRE - Google Patents
HIGH-PURITY Cu BONDING WIRE Download PDFInfo
- Publication number
- SG184233A1 SG184233A1 SG2012070769A SG2012070769A SG184233A1 SG 184233 A1 SG184233 A1 SG 184233A1 SG 2012070769 A SG2012070769 A SG 2012070769A SG 2012070769 A SG2012070769 A SG 2012070769A SG 184233 A1 SG184233 A1 SG 184233A1
- Authority
- SG
- Singapore
- Prior art keywords
- wire
- bonding
- high purity
- ball
- alloy wire
- Prior art date
Links
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 description 70
- 239000002184 metal Substances 0.000 description 36
- 230000000694 effects Effects 0.000 description 20
- 238000001953 recrystallisation Methods 0.000 description 20
- 239000012528 membrane Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005491 wire drawing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JMIFGARJSWXZSH-UHFFFAOYSA-N DMH1 Chemical compound C1=CC(OC(C)C)=CC=C1C1=CN2N=CC(C=3C4=CC=CC=C4N=CC=3)=C2N=C1 JMIFGARJSWXZSH-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- -1 with a load of 0.2 N Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- Engineering & Computer Science (AREA)
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- Metallurgy (AREA)
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2010/055281 WO2011118009A1 (ja) | 2010-03-25 | 2010-03-25 | 高純度Cuボンディングワイヤ |
Publications (1)
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SG184233A1 true SG184233A1 (en) | 2012-10-30 |
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SG2012070769A SG184233A1 (en) | 2010-03-25 | 2010-03-25 | HIGH-PURITY Cu BONDING WIRE |
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KR (1) | KR101280053B1 (ko) |
MY (1) | MY166908A (ko) |
SG (1) | SG184233A1 (ko) |
WO (1) | WO2011118009A1 (ko) |
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JP5998758B2 (ja) | 2012-08-31 | 2016-09-28 | 三菱マテリアル株式会社 | 荒引銅線及び巻線、並びに、荒引銅線の製造方法 |
JP5680773B1 (ja) * | 2014-01-29 | 2015-03-04 | 千住金属工業株式会社 | Cu核ボール、はんだ継手、フォームはんだおよびはんだペースト |
CN106029260B (zh) * | 2014-02-04 | 2018-05-18 | 千住金属工业株式会社 | Cu球、Cu芯球、钎焊接头、焊膏和成形焊料 |
JP6361194B2 (ja) | 2014-03-14 | 2018-07-25 | 三菱マテリアル株式会社 | 銅鋳塊、銅線材、及び、銅鋳塊の製造方法 |
WO2016189752A1 (ja) | 2015-05-26 | 2016-12-01 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
KR101688080B1 (ko) * | 2015-09-09 | 2016-12-20 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 |
CN109763015A (zh) * | 2019-03-25 | 2019-05-17 | 杭州辰卓科技有限公司 | 一种电子封装用阻尼型高导热耐脆断银键合线用材料 |
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JPH01290231A (ja) * | 1988-05-18 | 1989-11-22 | Mitsubishi Metal Corp | 半導体装置用銅合金極細線及び半導体装置 |
JPH01291435A (ja) * | 1988-05-18 | 1989-11-24 | Mitsubishi Metal Corp | 半導体装置用銅合金極細線及び半導体装置 |
JP2004064033A (ja) | 2001-10-23 | 2004-02-26 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
KR101019811B1 (ko) * | 2005-01-05 | 2011-03-04 | 신닛테츠 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
KR100702662B1 (ko) | 2005-02-18 | 2007-04-02 | 엠케이전자 주식회사 | 반도체 패키징용 구리 본딩 와이어 |
JP4349641B1 (ja) * | 2009-03-23 | 2009-10-21 | 田中電子工業株式会社 | ボールボンディング用被覆銅ワイヤ |
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- 2010-03-25 KR KR1020127024832A patent/KR101280053B1/ko active IP Right Grant
- 2010-03-25 WO PCT/JP2010/055281 patent/WO2011118009A1/ja active Application Filing
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KR20130004912A (ko) | 2013-01-14 |
CN102859672A (zh) | 2013-01-02 |
WO2011118009A1 (ja) | 2011-09-29 |
MY166908A (en) | 2018-07-24 |
KR101280053B1 (ko) | 2013-06-28 |
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