SG179482A1 - Edge electrodes with dielectric covers - Google Patents

Edge electrodes with dielectric covers

Info

Publication number
SG179482A1
SG179482A1 SG2012017695A SG2012017695A SG179482A1 SG 179482 A1 SG179482 A1 SG 179482A1 SG 2012017695 A SG2012017695 A SG 2012017695A SG 2012017695 A SG2012017695 A SG 2012017695A SG 179482 A1 SG179482 A1 SG 179482A1
Authority
SG
Singapore
Prior art keywords
substrate
edge electrode
processing chamber
plasma processing
substrate support
Prior art date
Application number
SG2012017695A
Other languages
English (en)
Inventor
Gregory S Sexton
Andrew D Bailey
Andras Kuthi
Yunsang Kim
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39738668&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG179482(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG179482A1 publication Critical patent/SG179482A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Plasma Technology (AREA)
SG2012017695A 2007-03-05 2008-02-14 Edge electrodes with dielectric covers SG179482A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US89306907P 2007-03-05 2007-03-05
US89307407P 2007-03-05 2007-03-05
US11/758,584 US9184043B2 (en) 2006-05-24 2007-06-05 Edge electrodes with dielectric covers

Publications (1)

Publication Number Publication Date
SG179482A1 true SG179482A1 (en) 2012-04-27

Family

ID=39738668

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2012017695A SG179482A1 (en) 2007-03-05 2008-02-14 Edge electrodes with dielectric covers

Country Status (6)

Country Link
US (2) US9184043B2 (https=)
JP (1) JP4975113B2 (https=)
KR (1) KR101441720B1 (https=)
SG (1) SG179482A1 (https=)
TW (1) TWI443737B (https=)
WO (1) WO2008109240A1 (https=)

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US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
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US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
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US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
CN111095523A (zh) * 2018-01-22 2020-05-01 应用材料公司 利用经供电的边缘环的处理
JP7502039B2 (ja) * 2019-03-28 2024-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置
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US11676804B2 (en) 2019-07-01 2023-06-13 Semes Co., Ltd. Apparatus and method for treating substrate
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US12272545B2 (en) 2020-03-19 2025-04-08 International Business Machines Corporation Embedded metal contamination removal from BEOL wafers
JP2021197244A (ja) * 2020-06-11 2021-12-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP2021197524A (ja) 2020-06-18 2021-12-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI888680B (zh) * 2020-12-18 2025-07-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR102767880B1 (ko) 2021-11-02 2025-02-17 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
KR20240154309A (ko) * 2023-04-18 2024-10-25 피에스케이 주식회사 기판 처리 장치
JP2025068434A (ja) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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Also Published As

Publication number Publication date
US20160064215A1 (en) 2016-03-03
TW200901311A (en) 2009-01-01
JP2010520646A (ja) 2010-06-10
TWI443737B (zh) 2014-07-01
US9564308B2 (en) 2017-02-07
KR101441720B9 (ko) 2024-03-25
JP4975113B2 (ja) 2012-07-11
WO2008109240A1 (en) 2008-09-12
US9184043B2 (en) 2015-11-10
KR101441720B1 (ko) 2014-09-17
KR20090129417A (ko) 2009-12-16
US20090166326A1 (en) 2009-07-02

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