JP2013534564A - 薄膜太陽電池の堆積のための表面給電電極およびその信号給電方法 - Google Patents
薄膜太陽電池の堆積のための表面給電電極およびその信号給電方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
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- 239000010703 silicon Substances 0.000 claims description 19
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Abstract
Description
現在、シリコン系薄膜太陽電池は、多くの場合、プラズマ増強化学気相堆積(PECVD)を使用して、単接合または多接合の光起電PIN膜層を構築している。このタイプの無線周波(RF)容量結合型平行板反応器は、通常、種々の材料、例えば、アモルファスシリコン、アモルファスシリコンゲルマニウム、炭化シリコン、窒化シリコンおよび酸化シリコン等の大面積薄膜堆積を製造するために使用される。薄膜太陽電池業界では、支持フレームの付いた電極を、通例、クランプユニット、ホルダまたは固定具と呼び、チャンバの内側に配設されたホルダを持つプラズマ化学気相堆積装置は、多くの場合、「堆積ボックス」、すなわち、反応器チャンバと呼ばれる。
本発明は、問題、例えば、VHF駆動電源の放電の不均一性を解決し、大面積VHF−PECVD堆積チャンバ内でむらのない電界を得るための新しいタイプの電極を提供することを企図する。そのような解決策を使用して、薄膜太陽電池を大量生産するための大面積多電極VHF−PECVD電極アレイをもたらすことができる。
信号給電要素が表面接触によって信号給電ポートに接続され、無線周波(RF)または超短波(VHF)電源信号のマイナス端に接続され;
RF/VHF電源信号が表面給電モードで給電され;
信号給電要素の一つの端部が半円形状であり;
カソード板のシールドカバーにスルーホールが構成される。
信号給電要素を使用し、表面接触で信号給電ポートを接続してRF/VHF電源信号を給電することにより、表面給電モードが実現され;
カソード板の裏側の中心領域の凹状円形領域に信号給電ポートが位置し;
カソード板のシールドカバーにスルーホールが構成される。
第一の実施態様
電極板が垂直に配置され、カソードの給電ポートが円形形状であり、カソード電極板の裏側中心の凹状円形領域に位置する。信号給電要素は、平坦な胴部と、半円形状の信号給電表面を持つ一つの端部とを包含する。カソードシールドカバーにスルーホールが構成される。
カソード板の給電ポートが円形形状であり、カソード電極板の裏側中心の凹状円形領域の円形表面上に位置する。信号給電要素は、平坦な胴部と、半円形状の信号給電表面を持つ一つの端部とを包含する。カソードシールドカバーにスルーホールが構成される。
カソード板の給電ポートが円形形状であり、カソード電極板の裏側中心の凹状円形領域の円形表面上に位置する。信号給電要素は、平坦な胴部と、半円形状の信号給電表面を持つ一つの端部とを包含する。カソードシールドカバーにスルーホールが構成される。
Claims (13)
- シリコン薄膜太陽電池堆積のための表面給電電極構造であって、
アノード板およびカソード板を有する電極板要素と、
電極板要素上に構成された信号給電ポートと、
を含み、
電極板要素のアノード板が電源信号のプラス端に接続および接地され、
信号給電ポートがカソード板の裏側の中心領域の凹状円形領域に位置し、
信号給電要素が表面接触によって信号給電ポートに接続され、無線周波(RF)または超短波(VHF)電源信号のマイナス端に接続され、
RF/VHF電源信号が表面給電モードで給電され、
信号給電要素の一つの端部が半円形状であり、
カソード板のシールドカバーにスルーホールが構成される、
表面給電電極構造。 - 信号給電要素が、絶縁層および外側シールド層を包含する、請求項1または2記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- 信号給電要素が、胴部およびヘッド部を有する段形状の導電性ストリップである、請求項2記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- 信号給電要素が、平坦な胴部および半円形状のヘッド部を包含する、請求項1〜3のいずれか一項記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- 信号給電要素が、銅製の給電コア、絶縁層、および外側シールド層を包含する、請求項1記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- 電極板要素が、単一表面放電カソード板、セラミック絶縁層およびシールドカバーを包含する、請求項1記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- シールドカバーが、カソード板の背面および側部表面全体を覆う、請求項1記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- 電極板要素が、シールドカバーおよびアノード板を接地するための接地を包含し、カソード板とアノード板とが特定の放電距離で分離される、請求項1記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- シールドカバーが、RF/VHF電源信号を給電するために、カソード板の裏側の中央位置および周囲側部のシールドを包含する、請求項1記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- 信号給電要素の一つの端部が、RF/VHF電源信号のマイナス出力ポートおよび電源整合装置に接続される、請求項1記載のシリコン薄膜太陽電池堆積のための表面給電電極構造。
- シリコン薄膜太陽電池堆積のための表面給電電極構造の信号給電方法であって、
電極板要素上に構成された信号給電ポートを有する電極板要素を提供する工程と、
表面給電モードで無線周波(RF)または超短波(VHF)電源信号を給電する工程と、を含み、
信号給電要素を使用し、表面接触で信号給電ポートを接続してRF/VHF電源信号を給電することにより、表面給電モードが実現され、
カソード板の裏側の中心領域の凹状円形領域に信号給電ポートが位置し、
カソード板のシールドカバーにスルーホールが構成される、
信号給電方法。 - 信号給電要素がスルーホールから出る時にシールドカバーに接触しないように、カソード板のシールドカバーにスルーホールが構成される、請求項9記載のシリコン薄膜太陽電池堆積のための表面給電電極構造の信号給電方法。
- 信号給電要素が胴部およびヘッド部を有する段形状の導電性ストリップである、請求項9記載のシリコン薄膜太陽電池堆積のための表面給電電極構造の信号給電方法。
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CN2010101987239A CN101857953B (zh) | 2010-06-11 | 2010-06-11 | 薄膜太阳能电池沉积用面馈入电极 |
CN201010198723.9 | 2010-06-11 | ||
PCT/CN2010/001657 WO2011153673A1 (zh) | 2010-06-11 | 2010-10-21 | 薄膜太阳能电池沉积用面馈入电极及其信号馈入方法 |
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CN101859801B (zh) * | 2010-06-11 | 2013-02-20 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积用放电电极板阵列 |
CN101880868B (zh) * | 2010-06-11 | 2012-03-07 | 深圳市创益科技发展有限公司 | 一种硅基薄膜太阳能电池的沉积盒 |
CN101857953B (zh) * | 2010-06-11 | 2012-04-18 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积用面馈入电极 |
CN101882647B (zh) * | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | 一种硅基薄膜太阳能电池活动夹具 |
CN104593749B (zh) * | 2015-02-11 | 2017-01-18 | 南开大学 | 一种pecvd系统真空腔室中辉光放电时屏蔽干扰的方法 |
CN105039936B (zh) * | 2015-07-28 | 2017-10-27 | 北京精诚铂阳光电设备有限公司 | 电传输馈入结构及具有其的pecvd设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4576830A (en) * | 1984-11-05 | 1986-03-18 | Chronar Corp. | Deposition of materials |
JP2006261363A (ja) * | 2005-03-17 | 2006-09-28 | Fuji Electric Holdings Co Ltd | プラズマ処理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6155202A (en) * | 1997-11-28 | 2000-12-05 | Alps Electric Co., Ltd. | Plasma processing apparatus, matching box, and feeder |
CN2348493Y (zh) * | 1998-07-19 | 1999-11-10 | 周庆明 | 一种大面积沉积非晶硅的反应盒 |
JP2000164521A (ja) * | 1998-11-26 | 2000-06-16 | Canon Inc | プラズマ処理装置およびプラズマ処理方法 |
TW511398B (en) | 2000-09-12 | 2002-11-21 | Tokyo Electron Ltd | Apparatus and method to control the uniformity of plasma by reducing radial loss |
JP2004128159A (ja) * | 2002-10-01 | 2004-04-22 | Mitsubishi Heavy Ind Ltd | 高周波プラズマ発生装置および高周波プラズマ発生方法 |
JP4141234B2 (ja) * | 2002-11-13 | 2008-08-27 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
JP4788504B2 (ja) * | 2006-07-12 | 2011-10-05 | 富士電機株式会社 | プラズマ処理装置の給電構造 |
JP5119830B2 (ja) * | 2007-09-26 | 2013-01-16 | 富士電機株式会社 | プラズマ装置 |
CN100510169C (zh) * | 2007-11-19 | 2009-07-08 | 南开大学 | 一种可获得均匀电场的大面积vhf-pecvd反应室电极 |
CN100567567C (zh) * | 2007-11-19 | 2009-12-09 | 南开大学 | 可获得均匀电场的大面积vhf-pecvd反应室背馈入式平行板功率电极 |
CN100519836C (zh) * | 2007-11-19 | 2009-07-29 | 南开大学 | 可获得均匀电场的大面积vhf-pecvd反应室异形电极 |
CN201185171Y (zh) * | 2008-01-18 | 2009-01-21 | 东捷科技股份有限公司 | 具有改善等离子体均匀度的电极 |
CN101880868B (zh) * | 2010-06-11 | 2012-03-07 | 深圳市创益科技发展有限公司 | 一种硅基薄膜太阳能电池的沉积盒 |
CN101882646B (zh) * | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积夹具 |
CN101859801B (zh) * | 2010-06-11 | 2013-02-20 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积用放电电极板阵列 |
CN101857953B (zh) * | 2010-06-11 | 2012-04-18 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积用面馈入电极 |
CN101882647B (zh) * | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | 一种硅基薄膜太阳能电池活动夹具 |
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- 2010-10-21 WO PCT/CN2010/001657 patent/WO2011153673A1/zh active Application Filing
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4576830A (en) * | 1984-11-05 | 1986-03-18 | Chronar Corp. | Deposition of materials |
JP2006261363A (ja) * | 2005-03-17 | 2006-09-28 | Fuji Electric Holdings Co Ltd | プラズマ処理装置 |
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EP2581949B8 (en) | 2017-08-09 |
EP2581949A4 (en) | 2015-11-25 |
CN101857953B (zh) | 2012-04-18 |
US8438989B2 (en) | 2013-05-14 |
EP2581949A1 (en) | 2013-04-17 |
CN101857953A (zh) | 2010-10-13 |
JP5512886B2 (ja) | 2014-06-04 |
EP2581949B1 (en) | 2017-03-01 |
WO2011153673A1 (zh) | 2011-12-15 |
US20130063028A1 (en) | 2013-03-14 |
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